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Nexperia USA Inc. BUK9Y113-100E,115

Part No.:
BUK9Y113-100E,115
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixBUK9Y113-100E,115.pdf
Description:
MOSFET N-CH 100V 12A LFPAK56
Quantity:
Payment:
Payment
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Inventory:6,154

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Product details

Overview

BUK9Y113-100E from Nexperia is an AEC-Q101-qualified N-channel logic-level MOSFET in LFPAK56 (SOT669) package, rated for 100 V VDS, 113 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, 12 A continuous drain current at Tmb = 25 °C, and 175 °C maximum junction temperature - deployed in automotive transmission control and 48 V power switching circuits.

For engineers reviewing the BUK9Y113-100E datasheet, BUK9Y113-100E pinout, BUK9Y113-100E application, or BUK9Y113-100E equivalent, this page delivers verified thermal resistance (Rth(j-mb) = 3.33 K/W), repetitive avalanche rating, true logic-level gate threshold (VGS(th) ≥ 0.5 V at 175 °C), and LFPAK56 mounting-base thermal interface details critical for high-reliability automotive PCB layout and thermal design.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low RDS(on) with robust gate oxide integrity and stable threshold voltage across temperature. Its 175 °C junction rating and Q101 qualification enable direct integration into under-hood modules without derating penalties typical of standard industrial MOSFETs.

The device features a monolithic source-drain diode with 28 ns reverse recovery time and 29 nC recovered charge, supporting efficient synchronous rectification and flyback energy handling in solenoid and motor drive applications. Its gate charge profile (QG(tot) = 8.4 nC, QGD = 3.9 nC) supports fast switching with minimal Miller-induced shoot-through risk at 5 V logic drive.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Maximum drain-source blocking voltage compatible with 48 V automotive systems with 2× transient margin.
RDS(on) 113 mΩ @ VGS = 5 V, ID = 5 A, Tj = 25 °C - Enables <1.2 W conduction loss at 10 A, reducing heatsink requirements.
ID (cont) 12 A @ Tmb = 25 °C - Sustained current capability suitable for high-duty-cycle lamp and solenoid drivers.
Ptot 45 W @ Tmb = 25 °C - High power density enabled by LFPAK56's low Rth(j-mb) = 3.33 K/W.
VGS(th) ≥ 0.5 V @ Tj = 175 °C - Ensures reliable turn-on with standard 3.3 V/5 V microcontroller GPIOs even at extreme under-hood temperatures.
EAS 13.4 mJ - Non-repetitive avalanche energy rating allows safe operation during inductive load switching transients without external snubbers.
QGD 3.9 nC - Low gate-drain charge minimizes switching losses and improves controllability in hard-switched DC-DC and motor phases.

Pinout & Package

LFPAK56 (SOT669) is a thermally enhanced surface-mount package with exposed mounting base connected to drain, optimized for PCB copper thermal spreading. It provides 3× parallel source leads and single gate terminal for low-inductance, high-current routing.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (S) Three independent source terminals reduce bond-wire inductance and improve current sharing in high-di/dt switching.
4 Gate (G) Single gate input with 8.4 nC total gate charge; designed for direct 5 V logic-level drive without level-shifting.
Mounting Base Drain (D) Exposed copper pad electrically and thermally connected to drain - requires dedicated PCB thermal pad with ≥4 thermal vias for optimal Rth(j-mb).

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JESD22-A114, enabling use in safety-critical transmission control modules.
Repetitive avalanche rated Rated for repeated unclamped inductive switching events up to 13.4 mJ, eliminating need for external clamping diodes in solenoid drivers.
175 °C junction rating Enables full-rated performance in engine bay environments without current derating - unlike standard 150 °C MOSFETs requiring >30 % ID reduction at 125 °C ambient.
True logic-level gate VGS(th) ≥ 0.5 V at 175 °C ensures guaranteed turn-on with 3.3 V MCU outputs, avoiding gate driver ICs in space-constrained ECUs.
LFPAK56 thermal performance Rth(j-mb) = 3.33 K/W enables 45 W dissipation with only 150 °C ΔT - outperforming SO-8 packages by >40 % in thermal resistance.

Applications

Transmission Control Valve Driver 48 V Mild Hybrid Starter Generator Interface

Use Scenario: Driving PWM-controlled hydraulic solenoids in 8-speed automatic transmissions, operating continuously at 125 °C under-hood ambient.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling 8–10 A solenoid current with 20 kHz switching frequency and <100 ns dead-time requirements.

Use Value: 113 mΩ RDS(on) and 175 °C rating eliminate thermal throttling; 3.9 nC QGD ensures clean edge control without gate oscillation.

Use Scenario: Bidirectional power switching in 48 V starter-generator inverters, managing regenerative braking and cranking pulses.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling 12 A RMS current, subjected to repetitive 100 V inductive flyback transients.

Use Value: 13.4 mJ avalanche energy rating absorbs flyback energy without failure; LFPAK56 mounting base sustains 45 W dissipation during peak torque events.

LED Headlamp Matrix Dimming Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Individual channel dimming for adaptive LED headlamps with 24 V supply and 2 A per string, requiring flicker-free 10 kHz PWM.

IC Role / Device Role / Timing Role: Low-side constant-current switch with precise duty-cycle control and <10 ns propagation delay tolerance.

Use Value: 8.4 nC total gate charge enables fast, predictable turn-on/off with minimal gate drive power; 28 ns trr prevents cross-conduction in multi-string layouts.

Use Scenario: High-reliability phase-leg switching in EPS motor controllers, exposed to vibration, salt mist, and 140 °C under-dash ambient.

IC Role / Device Role / Timing Role: Inverter half-bridge switch delivering 10 A peak phase current with <500 ns switching transitions and zero fault-induced latch-up.

Use Value: AEC-Q101 qualification guarantees lifetime reliability; 3.33 K/W Rth(j-mb) maintains junction temperature below 150 °C even with minimal heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N10F7 100 V, 2.2 mΩ RDS(on) @ 10 V, 220 A rating - significantly lower on-resistance but requires 10 V gate drive and larger DFN5x6 package. Better suited for high-current traction inverters; not logic-level compatible and lacks Q101 certification in standard grade. Select when system uses 10 V gate drivers and demands sub-3 mΩ conduction loss - not drop-in for 5 V logic-driven designs.
IRF3205PBF 55 V, 8 mΩ RDS(on) @ 10 V, TO-220 package - lower voltage rating, higher RDS(on), no automotive qualification, and 175 °C rating only in selected variants. Used in cost-sensitive industrial motor drives; unsuitable for 48 V automotive systems due to insufficient VDS margin. Consider only for non-automotive 12 V/24 V applications where AEC-Q101 compliance and 100 V rating are not required.

Compared with STL220N10F7 and IRF3205PBF, BUK9Y113-100E uniquely balances 5 V logic compatibility, 100 V rating, AEC-Q101 qualification, and LFPAK56 thermal efficiency - making it the only viable option for space-constrained, high-temperature automotive switches demanding both reliability and ease of drive.

Availability

BUK9Y113-100E is available at Aetrix Electronics and suitable for automotive transmission control, 48 V mild hybrid power interfaces, and LED headlamp matrix dimming requiring stable component supply across extended production lifecycles.

Supply support for BUK9Y113-100E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection solutions.

BUK9Y113-100E belongs to Nexperia's LFPAK automotive logic-level MOSFET product line, engineered specifically for thermally demanding, safety-critical vehicle subsystems where compact size, robustness, and guaranteed 5 V drive are mandatory.

FAQ

Is BUK9Y113-100E suitable for 48 V battery system switching?

Yes. With 100 V VDS, 113 mΩ RDS(on) at 5 V gate drive, and AEC-Q101 qualification, it supports 48 V nominal systems including ISO 16750-2 load dump transients up to 87 V. Its 175 °C rating ensures uninterrupted operation during sustained high-power events in under-hood locations.

What is the recommended PCB layout for optimal thermal performance?

Use a minimum 25 mm² exposed copper thermal pad connected to the mounting base via ≥4 thermal vias (0.3 mm diameter, filled and plated). Route all three source pins directly to ground plane, keep gate trace short and shielded, and avoid solder mask over the mounting base area to maximize heat transfer to the PCB.

Does BUK9Y113-100E require a gate resistor for automotive PWM applications?

A 5–10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and prevent false turn-on during high-di/dt events. This value balances switching speed (10–15 ns rise/fall times) and EMI suppression without compromising gate drive strength from standard MCU GPIOs.

Can BUK9Y113-100E replace older SO-8 MOSFETs like IRFZ44N in existing designs?

No direct replacement: IRFZ44N is 55 V, non-automotive, and requires 10 V for full enhancement. BUK9Y113-100E offers higher voltage rating, logic-level drive, and automotive qualification but uses LFPAK56 footprint (SOT669), requiring PCB land pattern revision and thermal pad redesign.

BUK9Y113-100E,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
110mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
8.4 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
45W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

BUK9Y113-100E,115 FAQ

1.How can I place an order for BUK9Y113-100E,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9Y113-100E,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of BUK9Y113-100E,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9Y113-100E,115 is usually 5 days.

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Once your BUK9Y113-100E,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9Y113-100E,115?

For technical support, including BUK9Y113-100E,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9Y113-100E,115 requirements.

6.How does Aetrix verify that BUK9Y113-100E,115 is sourced from the original manufacturer or authorized distributors?

All BUK9Y113-100E,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y113-100E,115 meets industry standards.

7.What is the process for return or replacement of BUK9Y113-100E,115?

All BUK9Y113-100E,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y113-100E,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9Y113-100E,115 part is unused and in its original packaging.

Return procedure for BUK9Y113-100E,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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