Nexperia USA Inc. BUK9Y19-100E,115

Overview

BUK9Y19-100E from Nexperia is an AEC-Q101-qualified N-channel logic-level MOSFET in LFPAK56 (SOT669) package, rated for 100 V V_DS, 19 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, with 56 A continuous drain current at T_mb = 25 °C and 167 W total power dissipation. It serves as a high-efficiency power switch in automotive transmission control and 12–48 V motor/solenoid drivers.

For engineers reviewing the BUK9Y19-100E datasheet, BUK9Y19-100E pinout, BUK9Y19-100E application, or BUK9Y19-100E equivalent, key selection criteria include its 5 V logic-level gate drive compatibility, 0.9 K/W junction-to-mounting-base thermal resistance, avalanche ruggedness (94.1 mJ), and LFPAK56 package's enhanced thermal and power cycling performance over standard SO-8.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with Q_GD = 14.1 nC and t_f = 34.3 ns under 5 V gate drive. Its gate threshold voltage ranges from 0.5 V (T_j = 175 °C) to 2.1 V (T_j = 25 °C), enabling robust turn-on across automotive temperature extremes.

The device integrates a source-drain diode with V_SD = 0.8–1.2 V at I_S = 15 A and t_rr = 38 ns, supporting synchronous rectification and freewheeling in inductive loads. Its unclamped avalanche rating and 175 °C maximum junction temperature support high-reliability operation in engine bay and transmission control modules.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a 4-lead surface-mount plastic package with exposed mounting base connected to drain, optimized for low thermal resistance and high power density. The package measures 5.8 × 4.4 mm with 1.27 mm lead pitch and supports reflow soldering per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N10F7 and IRF3205PBF, BUK9Y19-100E uniquely combines 5 V logic-level operation, AEC-Q101 qualification, 100 V rating, and LFPAK56 thermal performance - making it the only drop-in solution for production-grade 12–48 V automotive power switching where gate simplicity, reliability, and board space are jointly constrained.

Availability

BUK9Y19-100E is available at Aetrix Electronics and suitable for automotive transmission control, engine cooling fan drives, and electric power steering motor inverters requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for BUK9Y19-100E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-qualified components and advanced packaging.

This part belongs to Nexperia's LFPAK automotive MOSFET portfolio, engineered specifically for high-current, high-temperature power switching in engine control units, transmission modules, and body electronics where AEC-Q101 compliance and thermal robustness are mandatory.

FAQ

Is BUK9Y19-100E suitable for 48 V mild-hybrid vehicle systems?

Yes. Its 100 V V_DS rating exceeds the 48 V system's maximum load-dump transient (typically ≤65 V), and its AEC-Q101 qualification covers extended temperature operation from −40 °C to +175 °C - meeting ISO 16750-2 requirements for 48 V automotive applications.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 2 in the datasheet, the continuous drain current is derated to 40 A at T_mb = 100 °C. This reflects thermal limitation rather than electrical saturation, and assumes adequate PCB copper area for heat spreading per Nexperia's recommended layout guidelines.

Does BUK9Y19-100E have integrated ESD protection on the gate?

No. The device does not include on-chip ESD protection diodes. External gate protection (e.g., 10 kΩ series resistor + 12 V Zener clamp to source) is recommended in environments with high static or transient risk, especially during assembly or connector mating.

Can this MOSFET be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Figure 12) promotes current sharing. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors are required to ensure balanced dynamic current distribution and avoid oscillation or thermal runaway.