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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK9Y19-55B,115

Name: BUK9Y19-55B,115
Brand: Nexperia USA Inc.
SKU: BUK9Y19-55B,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK9Y19-55B,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: BUK9Y19-55B,115.pdf

Description:: MOSFET N-CH 55V 46A LFPAK56

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Product details

Overview

BUK9Y19-55B,115 from Nexperia is a logic-level N-channel TrenchMOS power FET in LFPAK (SOT669) package, rated for 55 V V_DS, 46 A continuous drain current at 25 °C mounting base temperature, and 175 °C junction operation. It features 16.3 mΩ typical R_DS(on) at V_GS = 5 V and ID = 20 A, AEC-Q101 qualified for automotive critical loads including solenoids, lamps, and 12/24 V DC motors.

For engineers reviewing the BUK9Y19-55B,115 datasheet, BUK9Y19-55B,115 pinout, BUK9Y19-55B,115 application, or BUK9Y19-55B,115 equivalent, this device is selected for high-reliability, low-R_DS(on) switching in thermally constrained automotive power distribution modules where logic-level gate drive and avalanche ruggedness (80 mJ unclamped) are required.

Technical Context

This FET uses Nexperia's High-Performance Automotive (HPA) TrenchMOS technology to achieve low on-resistance with logic-level gate compatibility (V_GS(th) = 1.1–2.0 V at 25 °C). Its thermal resistance R_th(j-mb) is 1.8 K/W, enabling high-power dissipation (85 W at T_mb = 25 °C) when mounted on a PCB copper area acting as a heatsink.

The device supports unclamped inductive switching with 80 mJ non-repetitive avalanche energy and exhibits fast switching (t_d(on) = 18 ns, t_f = 134 ns) under 5 V gate drive. Its source-drain diode has V_SD = 0.85 V at 25 A and T_j = 25 °C, supporting freewheeling in half-bridge or load-switch configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage; suitable for 24 V automotive systems with transient margin.
R_DS(on)	16.3 mΩ (typ) at V_GS = 5 V, I_D = 20 A, T_j = 25 °C - Enables <1.6 W conduction loss at 20 A, reducing thermal stress.
I_D (cont)	46 A at T_mb = 25 °C - Supports high-current 12/24 V loads without external heatsinking under controlled board layout.
E_AS	80 mJ (unclamped) - Withstands inductive kickback from solenoid or motor turn-off without external snubber.
R_th(j-mb)	1.8 K/W - Junction-to-mounting-base thermal resistance enables direct thermal coupling to PCB copper, simplifying thermal design.
Q_G(tot)	18 nC - Low total gate charge allows fast switching with modest 5 V gate drivers, minimizing driver losses.
V_GS(th)	1.1–2.0 V at T_j = 25 °C - Ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIOs.

Pinout & Package

Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base connected to drain for enhanced thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 - S	Source	Three parallel source terminals reduce bond-wire inductance and improve current sharing; connects to low-side return path.
4 - G	Gate	Single gate input; optimized for logic-level drive; requires no level-shifting from 3.3 V/5 V controllers.
Mounting base - D	Drain	Exposed copper pad electrically and thermally connected to drain; must be soldered to large PCB copper pour for thermal management.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages.
175 °C junction rating	Enables operation in under-hood environments without derating at elevated ambient temperatures.
Logic-level gate drive	V_GS(th) ≤ 2.0 V ensures reliable turn-on with standard MCU outputs, eliminating need for gate driver ICs.
Low R_DS(on) at 5 V	16.3 mΩ at V_GS = 5 V reduces conduction loss by >30% vs. standard MOSFETs requiring 10 V drive.
High avalanche ruggedness	80 mJ unclamped E_AS supports robust inductive load switching without external protection components.

Applications

Automotive Door Lock Actuation

12 V LED Headlamp Dimming

Use Scenario: Driving dual-coil door lock solenoids in passenger vehicles with PWM-controlled engagement timing.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling solenoid current; handles repetitive 46 A peak pulses with fast turn-off to prevent coil overheating.

Use Value: 16.3 mΩ R_DS(on) limits I²R heating during 500 ms actuation cycles; 80 mJ avalanche rating absorbs back-EMF without snubber diodes.

Use Scenario: PWM dimming of high-brightness LED arrays in adaptive front lighting systems (AFS).

IC Role / Device Role / Timing Role: Low-side switching element in constant-current LED driver stage; operates at 200–1000 Hz with precise duty-cycle control.

Use Value: 18 nC Q_G enables clean 100 ns rise/fall edges at 5 V drive; 1.8 K/W R_th(j-mb) maintains <100 °C junction temp under 35 A pulsed load.

24 V Commercial Vehicle Horn Control

Engine Cooling Fan Power Stage

Use Scenario: On/off control of high-current electromagnetic horns in trucks and buses powered from 24 V battery systems.

IC Role / Device Role / Timing Role: Single-pole power switch interfacing microcontroller GPIO directly; withstands load dump transients up to 55 V.

Use Value: 55 V V_DS rating provides 10 V margin above nominal 24 V rail; logic-level threshold ensures activation even during cold-cranking (down to 6 V battery).

Use Scenario: Driving brushed DC cooling fans in engine bay with variable speed via PWM, subject to vibration and thermal cycling.

IC Role / Device Role / Timing Role: Main power switch in fan motor H-bridge half-leg; conducts 32 A continuously at T_mb = 100 °C per datasheet derating curve.

Use Value: AEC-Q101 qualification guarantees reliability over 15-year vehicle lifetime; 175 °C T_j rating prevents thermal shutdown during sustained high-load operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V V_DS, 220 A I_D, R_DS(on) = 1.4 mΩ @ 10 V - higher current, lower R_DS(on), but requires 10 V gate drive.	Targeted at high-power industrial motor drives; not logic-level compatible.	Select only if system uses 10 V gate drivers and demands sub-2 mΩ conduction loss.
IRL8721PBF	30 V V_DS, 76 A I_D, R_DS(on) = 8.8 mΩ @ 4.5 V - lower voltage rating, higher current, lower R_DS(on).	Suitable for 12 V-only systems; insufficient for 24 V automotive transients.	Use only in 12 V battery-powered equipment with strict R_DS(on) requirements and no 24 V compatibility needs.

Compared with STL220N6F7 and IRL8721PBF, BUK9Y19-55B,115 uniquely balances 55 V rating, true logic-level operation, AEC-Q101 compliance, and 16.3 mΩ R_DS(on) - making it the only drop-in solution for 12/24 V automotive power switching where gate drive voltage, reliability, and thermal constraints intersect.

Availability

BUK9Y19-55B,115 is available at Aetrix Electronics and suitable for automotive body control modules, engine management subsystems, and commercial vehicle lighting systems requiring stable component supply across extended product lifecycles.

Supply support for BUK9Y19-55B,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

BUK9Y19-55B,115 belongs to Nexperia's High-Performance Automotive (HPA) TrenchMOS product line, engineered specifically for AEC-Q101-compliant power switching in harsh-temperature, high-vibration automotive environments.

FAQ

Is BUK9Y19-55B,115 suitable for high-frequency PWM switching?

Yes - with t_d(on) = 18 ns, t_f = 134 ns, and Q_G(tot) = 18 nC, it supports PWM frequencies up to 200 kHz in low-duty-cycle applications. However, its C_iss = 1494 pF and R_DS(on) temperature coefficient require careful gate driver sizing and thermal layout for sustained high-frequency operation.

What is the maximum safe operating temperature for the mounting base?

The datasheet specifies continuous operation up to T_mb = 100 °C with I_D derated to 32 A. Exceeding 100 °C risks violating the 175 °C absolute maximum junction temperature limit, especially under high current or poor PCB copper thermal coupling - thermal simulation is recommended for designs approaching this boundary.

Can BUK9Y19-55B,115 replace a standard 10 V gate MOSFET in an existing design?

Yes, provided the gate drive remains ≥4.5 V - its logic-level V_GS(th) (1.1–2.0 V) and low R_DS(on) at 5 V make it a functional upgrade. However, verify avalanche energy handling (80 mJ) and thermal interface, as its LFPAK package relies on mounting base soldering rather than TO-220-style heatsinking.

Does the device include integrated ESD protection?

No - BUK9Y19-55B,115 has no built-in ESD protection circuitry. Its gate oxide is rated for ±15 V V_GS; external TVS diodes or RC snubbers are recommended in automotive harness-connected applications to suppress ISO 16750-2 load-dump and jump-start transients.

BUK9Y19-55B,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V

Rds On (Max) @ Id, Vgs:: 17.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 5 V

Vgs (Max):: ±15V

Input Capacitance (Ciss) (Max) @ Vds:: 1992 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

BUK9Y19-55B,115 FAQ

1.How can I place an order for BUK9Y19-55B,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9Y19-55B,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9Y19-55B,115 reliable?

The price and inventory of BUK9Y19-55B,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9Y19-55B,115 is usually 5 days.

3.What payment methods are accepted for BUK9Y19-55B,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9Y19-55B,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9Y19-55B,115?

BUK9Y19-55B,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9Y19-55B,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9Y19-55B,115?

For technical support, including BUK9Y19-55B,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9Y19-55B,115 requirements.

6.How does Aetrix verify that BUK9Y19-55B,115 is sourced from the original manufacturer or authorized distributors?

All BUK9Y19-55B,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y19-55B,115 meets industry standards.

7.What is the process for return or replacement of BUK9Y19-55B,115?

All BUK9Y19-55B,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y19-55B,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9Y19-55B,115 part is unused and in its original packaging.

Return procedure for BUK9Y19-55B,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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