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Nexperia USA Inc. BUK9Y19-55B/C2,115

Part No.:
BUK9Y19-55B/C2,115
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixBUK9Y19-55B/C2,115.pdf
Description:
MOSFET N-CH 55V 46A LFPAK56
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,425

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Product details

Overview

BUK9Y19-55B/C2,115 from Nexperia is a logic-level N-channel enhancement-mode power MOSFET using HPA TrenchMOS technology in LFPAK (SOT669) package, rated for 55 V VDS, 46 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature - designed for automotive-critical switching of 12 V/24 V loads including motors, lamps, and solenoids.

For engineers reviewing the BUK9Y19-55B/C2,115 datasheet, BUK9Y19-55B/C2,115 pinout, BUK9Y19-55B/C2,115 application, or BUK9Y19-55B/C2,115 equivalent, this device is selected for high-reliability, low-RDS(on) power switching where AEC-Q101 qualification, avalanche ruggedness (80 mJ), and thermal performance (Rth(j-mb) = 1.8 K/W) are essential.

Technical Context

This MOSFET employs Nexperia's High-Performance Automotive TrenchMOS process to deliver stable RDS(on) across temperature (16.3–40 mΩ from 25 °C to 175 °C at VGS = 5 V) and robust unclamped avalanche capability under automotive load dump conditions. Its gate threshold voltage (VGS(th) = 1.1–2.3 V) ensures full enhancement with standard 5 V logic drivers.

The LFPAK SOT669 package integrates a thermally optimized mounting base directly connected to the drain, enabling efficient heat transfer to PCB copper planes. Pin configuration supports low-inductance source return paths via three parallel source terminals, critical for minimizing switching losses and EMI in high-current automotive circuits.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V - Maximum drain-source blocking voltage compatible with 24 V automotive systems including load-dump transients.
RDS(on) 16.3 mΩ (typ) @ VGS = 5 V, ID = 20 A, Tj = 25 °C - Enables <1 W conduction loss at 20 A, reducing thermal design burden.
ID (cont) 46 A @ Tmb = 25 °C - Supports high-current DC loads such as starter relays, HVAC blowers, and fuel pumps without external heatsinking.
EAS 80 mJ (non-repetitive) - Withstands single-event inductive energy spikes up to 80 mJ without failure, critical for solenoid and motor turn-off.
Rth(j-mb) 1.8 K/W - Junction-to-mounting-base thermal resistance enables direct PCB thermal coupling for compact, high-power-density layouts.
QG(tot) 18 nC @ VDS = 44 V, VGS = 5 V - Low gate charge allows fast switching with modest gate drive strength, reducing driver cost and size.
VGS(th) 1.5 V (typ) @ Tj = 25 °C - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs without level-shifting circuitry.

Pinout & Package

Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base (drain-connected) for enhanced thermal and electrical performance.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 - S Source Three parallel source terminals minimize source inductance and improve current sharing during high di/dt switching events.
4 - G Gate Single gate input with low QGS/QGD ratio (5 nC / 8 nC) supporting clean, controllable turn-on/turn-off transitions.
Mounting Base (mb) Drain Exposed copper pad electrically and thermally connected to drain - must be soldered to large PCB copper area for thermal management and low-impedance return path.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive safety-critical applications per stress test requirements, including temperature cycling, HTRB, and UHAST.
Logic-level gate drive VGS(th) ≤ 2.3 V and RDS(on) fully specified at VGS = 4.5 V - eliminates need for gate driver ICs in 5 V MCU-based control modules.
Low RDS(on) over temperature RDS(on) increases only ~2.5× from 25 °C to 175 °C - maintains predictable conduction loss in under-hood environments.
High avalanche energy rating 80 mJ unclamped single-pulse energy - protects against inductive kickback in relay, lamp, and motor control without external snubbers.
LFPAK thermal efficiency Rth(j-mb) = 1.8 K/W - delivers >2× better thermal performance than comparable SO-8 packages, enabling higher power density.

Applications

Automotive Body Control Module (BCM) Engine Management System (EMS) Actuator Drive

Use Scenario: Switching 12 V headlamp, fog lamp, or interior lighting circuits in modern BCMs with PWM dimming and diagnostics.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling load current with integrated current sensing and short-circuit protection feedback.

Use Value: Low RDS(on) minimizes self-heating during extended illumination; AEC-Q101 compliance ensures reliability over 15-year vehicle lifetime.

Use Scenario: Driving fuel injectors, idle air control valves, or turbocharger wastegate actuators requiring precise on/off timing and high peak current.

IC Role / Device Role / Timing Role: Low-inductance, high-current switching element with fast turn-off (tf = 134 ns) to support precise pulse-width modulation at up to 10 kHz.

Use Value: Avalanche ruggedness absorbs inductive energy during valve de-energization, eliminating need for external flyback diodes in space-constrained engine bays.

Commercial Vehicle 24 V Power Distribution Electric Power Steering (EPS) Auxiliary Loads

Use Scenario: Solid-state replacement for mechanical relays in heavy-duty truck cab power distribution units managing auxiliary 24 V accessories.

IC Role / Device Role / Timing Role: Main power switch handling up to 46 A continuous load with built-in thermal derating based on mounting base temperature monitoring.

Use Value: 175 °C rated junction temperature and robust SOA enable operation in high-ambient under-dash environments without forced cooling.

Use Scenario: Controlling EPS cooling fans, hydraulic pump solenoids, or sensor bias supplies in safety-critical ADAS subsystems.

IC Role / Device Role / Timing Role: Safety-redundant power switch with diagnostic capability (via VGS monitoring) and fault reporting to main EPS controller.

Use Value: Q101 qualification and traceable manufacturing ensure compliance with ISO 26262 ASIL-B functional safety requirements for non-ASIL-C components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG Higher VDS (40 V), lower RDS(on) (1.6 mΩ), but larger PowerFLAT 5x6 package and no AEC-Q101 certification. Targeted at industrial motor drives, not automotive-qualified systems. Select only for non-automotive 24 V applications where qualification is not required and lower RDS(on) justifies larger footprint.
ON Semiconductor NTMFS5C675NL Same VDS (60 V), slightly higher RDS(on) (20.5 mΩ), AEC-Q101 qualified, but uses SO-8FL package with higher Rth(j-mb) (3.2 K/W). Acceptable for lower-power automotive loads where thermal constraints allow less aggressive heatsinking. Choose when legacy SO-8 footprint compatibility is needed, accepting 78% higher thermal resistance versus LFPAK.

Compared with STL220N4F7AG and NTMFS5C675NL, the BUK9Y19-55B/C2,115 uniquely balances AEC-Q101 qualification, ultra-low thermal resistance (1.8 K/W), and logic-level drive in a compact LFPAK - making it optimal for space- and thermal-constrained automotive power nodes where reliability is non-negotiable.

Availability

BUK9Y19-55B/C2,115 is available at Aetrix Electronics and suitable for automotive body control modules, engine actuator drivers, and commercial vehicle 24 V power distribution systems requiring stable component supply and long-term lifecycle assurance.

Supply support for BUK9Y19-55B/C2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - serving automotive, industrial, and consumer markets with AEC-Q101-qualified components.

This device belongs to Nexperia's High-Performance Automotive (HPA) TrenchMOS product line, engineered specifically for demanding automotive power switching applications requiring robustness, thermal efficiency, and qualification to automotive standards.

FAQ

Is BUK9Y19-55B/C2,115 suitable for high-frequency PWM applications?

Yes - with td(on) = 18 ns, tr = 180 ns, td(off) = 44 ns, and tf = 134 ns, it supports PWM frequencies up to 100 kHz in low-duty-cycle applications. However, its 18 nC total gate charge means gate driver strength must scale accordingly to maintain efficiency above 20 kHz.

What is the maximum safe operating temperature for continuous use?

The absolute maximum junction temperature is 175 °C, and the device is rated for continuous operation up to that limit. Derating begins at Tmb > 25 °C per Figure 1 - at Tmb = 100 °C, continuous ID drops to 32 A. Thermal design must ensure mounting base temperature remains within limits for target lifetime.

Can BUK9Y19-55B/C2,115 replace a mechanical relay in automotive lighting?

Yes - its 46 A continuous rating, 184 A peak current capability, and 80 mJ avalanche energy make it suitable for solid-state replacement of 40 A automotive relays. It eliminates contact wear, bounce, and EMI from arcing, while enabling diagnostics via VDS monitoring during conduction.

Does the mounting base require electrical isolation from the PCB ground plane?

No - the mounting base is internally connected to the drain terminal. When used in low-side configuration, it must be isolated from system ground; in high-side configuration, it connects directly to the battery rail. PCB layout must assign the mounting pad to the correct net and provide adequate creepage/clearance per automotive safety standards.

BUK9Y19-55B/C2,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
46A
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
17.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 5 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
1992 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

BUK9Y19-55B/C2,115 FAQ

1.How can I place an order for BUK9Y19-55B/C2,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9Y19-55B/C2,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9Y19-55B/C2,115 reliable?

The price and inventory of BUK9Y19-55B/C2,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9Y19-55B/C2,115 is usually 5 days.

3.What payment methods are accepted for BUK9Y19-55B/C2,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9Y19-55B/C2,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9Y19-55B/C2,115?

BUK9Y19-55B/C2,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9Y19-55B/C2,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9Y19-55B/C2,115?

For technical support, including BUK9Y19-55B/C2,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9Y19-55B/C2,115 requirements.

6.How does Aetrix verify that BUK9Y19-55B/C2,115 is sourced from the original manufacturer or authorized distributors?

All BUK9Y19-55B/C2,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y19-55B/C2,115 meets industry standards.

7.What is the process for return or replacement of BUK9Y19-55B/C2,115?

All BUK9Y19-55B/C2,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y19-55B/C2,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9Y19-55B/C2,115 part is unused and in its original packaging.

Return procedure for BUK9Y19-55B/C2,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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