Nexperia USA Inc. BUK9Y22-30B,115
- Part No.:
- BUK9Y22-30B,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
BUK9Y22-30B,115.pdf
- Description:
- MOSFET N-CH 30V 37.7A LFPAK56
- Quantity:
- Payment:

- Shipping:

Inventory:5,790
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Product details
Overview
BUK9Y22-30B from Nexperia is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 30 V VDS, 37.7 A continuous drain current at 25 °C mounting base temperature, and 175 °C junction operation-designed and AEC-Q101 qualified for automotive critical power switching in 12 V systems.
For engineers reviewing the BUK9Y22-30B datasheet, BUK9Y22-30B pinout, BUK9Y22-30B application, or BUK9Y22-30B equivalent, this device delivers low RDS(on) (17 mΩ typ @ 5 VGS, 20 A, 25 °C), robust avalanche energy (47 mJ), and thermal resilience up to 175 °C-key for motor, lamp, and solenoid control in thermally demanding automotive environments.
Technical Context
This discrete MOSFET uses TrenchMOS technology to achieve low conduction losses and stable threshold voltage across temperature (VGS(th) = 1.1–2.0 V @ 25 °C; 0.5–2.3 V @ –55 to 175 °C). Its gate is compatible with standard 3.3 V/5 V logic drivers without level shifting.
The device features an integrated source-drain diode (VSD = 0.85 V typ @ 10 A, 25 °C; trr = 30 ns), unclamped avalanche ruggedness (47 mJ), and a low junction-to-mounting-base thermal resistance of 2.53 K/W-enabling high-power density designs on thermally constrained PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports full 12 V automotive battery transients including load dump (ISO 7637-2 Pulse 5a). |
| RDS(on) | 17 mΩ typical @ VGS = 5 V, ID = 20 A, Tj = 25 °C - enables <1 W conduction loss at 20 A, reducing heatsink requirements. |
| ID (cont) | 37.7 A @ Tmb = 25 °C - delivers high current capability in compact LFPAK footprint with copper-clip construction. |
| EAS | 47 mJ non-repetitive avalanche energy - withstands inductive kickback from motors/solenoids without external snubbers. |
| Tj max | 175 °C - allows operation in under-hood environments where ambient exceeds 125 °C. |
| QGD | 4.5 nC - low gate-drain charge improves switching efficiency and reduces Miller-induced shoot-through risk in half-bridge configurations. |
| Rth(j-mb) | 2.53 K/W - enables direct thermal coupling to PCB copper or heatsink via exposed mounting base (drain-connected). |
Pinout & Package
Package: SOT669 (LFPAK), plastic single-ended surface-mounted package with exposed copper mounting base (drain-connected) for enhanced thermal and current handling. Dimensions: 5.0 × 3.3 × 1.3 mm (L × W × H), with 4 leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (S) | Source | Three parallel source terminals reduce bond-wire inductance and improve current sharing; electrically common for low-inductance PCB layout. |
| 4 (G) | Gate | Single gate input optimized for logic-level drive; low QG(tot) (10.5 nC) enables fast turn-on with minimal gate driver power. |
| Mounting Base (mb) | Drain | Exposed copper pad connected internally to drain-provides primary thermal path and high-current return path; must be soldered to large copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages. |
| Logic-level gate drive | VGS(th) range (0.5–2.3 V) ensures reliable turn-on with 3.3 V or 5 V microcontrollers-no external level shifter required. |
| 175 °C junction rating | Enables uninterrupted operation in high-ambient under-hood locations where conventional MOSFETs derate significantly. |
| Low RDS(on) at 5 VGS | 17 mΩ typ eliminates need for gate boosting circuits while maintaining <1 W conduction loss at 20 A. |
| Integrated source-drain diode | 30 ns reverse recovery time and 33 nC recovered charge support freewheeling in inductive loads without external diodes. |
Applications
| Automotive Body Control Module (BCM) | 12 V DC Motor Driver |
|---|---|
|
Use Scenario: Switching interior lighting, window lifters, and door locks in modern BCMs with tight thermal envelopes. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling resistive and inductive 12 V loads. Use Value: AEC-Q101 qualification and 175 °C rating ensure reliability over vehicle lifetime; low RDS(on) minimizes board heating in densely packed modules. |
Use Scenario: Driving brushed DC motors in HVAC actuators, seat adjusters, and sunroof mechanisms. IC Role / Device Role / Timing Role: Low-side switch enabling PWM speed control and freewheeling via internal body diode. Use Value: 47 mJ avalanche energy absorbs inductive flyback without snubber components; fast tr/tf (18.5/23 ns) supports efficient 20 kHz PWM. |
| LED Headlamp Power Stage | Engine Start/Stop Solenoid Control |
|
Use Scenario: High-current switching of LED arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Constant-current or PWM-controlled power switch managing up to 30 A peak loads. Use Value: 37.7 A continuous rating and 150.7 A pulsed capability handle LED surge currents; low QGD prevents false turn-on during voltage transients. |
Use Scenario: Controlling starter solenoid engagement in 12 V start-stop systems subject to repeated cranking cycles. IC Role / Device Role / Timing Role: Robust low-side driver interfacing with MCU GPIO and handling high inrush currents. Use Value: 175 °C operation survives repeated thermal cycling during cold cranking; avalanche ruggedness prevents failure during solenoid de-energization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V, 220 A pulsed, RDS(on) = 1.2 mΩ @ 10 VGS; requires 10 V gate drive for optimal performance. | Higher current capability but not logic-level-needs gate driver IC for 3.3 V MCU interface. | Select when higher peak current and lower RDS(on) justify added gate drive complexity and cost. |
| IRL8721PBF | 30 V, 62 A, RDS(on) = 12 mΩ @ 5 VGS; TO-220 package with higher Rth(j-c) (3.0 K/W). | Larger footprint and inferior thermal performance-requires larger heatsink for same power dissipation. | Choose only if legacy TO-220 mounting is mandatory and PCB space is unconstrained. |
Compared with STL220N3LLH6 and IRL8721PBF, the BUK9Y22-30B uniquely combines AEC-Q101 qualification, true logic-level operation, LFPAK thermal efficiency, and automotive-grade avalanche ruggedness in a single surface-mount solution-making it optimal for space- and reliability-constrained 12 V automotive power nodes.
Availability
BUK9Y22-30B is available at Aetrix Electronics and suitable for automotive body control modules, 12 V motor drives, and LED headlamp power stages requiring stable component supply across extended production lifecycles.
Supply support for BUK9Y22-30B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, and MOSFETs-with manufacturing rooted in process excellence and automotive qualification rigor.
The BUK9Y series belongs to Nexperia's AEC-Q101-qualified TrenchMOS logic-level FET product line, engineered specifically for robust, thermally efficient 12 V automotive power switching where gate drive simplicity and long-term reliability are critical.
FAQ
Is BUK9Y22-30B suitable for high-frequency PWM switching?
Yes-its dynamic characteristics support efficient high-frequency operation: QGD = 4.5 nC, tr = 18.5 ns, and tf = 23 ns enable clean 20–100 kHz PWM switching in motor and LED drivers. The low Crss (102–140 pF) minimizes Miller effect, reducing gate driver stress and improving noise immunity.
What is the recommended PCB layout for thermal performance?
Maximize thermal performance by soldering the exposed mounting base (drain) to ≥200 mm² of 2 oz copper with ≥4 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) connecting to inner or back-side ground/power planes. Keep source traces wide and short; use all three source pins in parallel.
Does BUK9Y22-30B require a gate resistor for stability?
A gate resistor (typically 10–47 Ω) is recommended to dampen ringing and prevent oscillation due to PCB trace inductance interacting with QGD and Ciss. Values above 100 Ω increase switching losses unnecessarily; below 5 Ω risks overshoot and EMI. Layout-dependent optimization is advised.
Can BUK9Y22-30B replace older 40 V automotive MOSFETs in 12 V systems?
Yes-if the original design operates within 30 V system limits and does not require >37.7 A continuous current. Its lower RDS(on), superior thermal resistance, and AEC-Q101 compliance often improve reliability and efficiency-but verify avalanche energy (47 mJ) and SOA curves match the legacy load profile.
BUK9Y22-30B,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 37.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.5 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 940 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 59.4W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
BUK9Y22-30B,115 FAQ
1.How can I place an order for BUK9Y22-30B,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9Y22-30B,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9Y22-30B,115 reliable?
The price and inventory of BUK9Y22-30B,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9Y22-30B,115 is usually 5 days.
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5.How can I obtain technical support or documentation for BUK9Y22-30B,115?
For technical support, including BUK9Y22-30B,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9Y22-30B,115 requirements.
6.How does Aetrix verify that BUK9Y22-30B,115 is sourced from the original manufacturer or authorized distributors?
All BUK9Y22-30B,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y22-30B,115 meets industry standards.
7.What is the process for return or replacement of BUK9Y22-30B,115?
All BUK9Y22-30B,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y22-30B,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9Y22-30B,115 part is unused and in its original packaging.
Return procedure for BUK9Y22-30B,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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