Nexperia USA Inc. BUK9Y25-80E,115
- Part No.:
- BUK9Y25-80E,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
BUK9Y25-80E,115.pdf
- Description:
- MOSFET N-CH 80V 37A LFPAK56
- Quantity:
- Payment:

- Shipping:

Inventory:2,910
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Product details
Overview
BUK9Y25-80E from Nexperia is an AEC-Q101-qualified N-channel logic-level MOSFET in LFPAK56 (SOT669) package, rated for 80 V VDS, 27 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, with 175 °C maximum junction temperature and repetitive avalanche capability - deployed in automotive transmission control and high-current solenoid switching.
For engineers reviewing the BUK9Y25-80E datasheet, BUK9Y25-80E pinout, BUK9Y25-80E application, or BUK9Y25-80E equivalent, this page delivers verified electrical specs, thermal performance data, gate drive behavior at elevated temperature, and real-world automotive use context - all grounded in Nexperia's official 2013 product data sheet.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low on-resistance while maintaining robust switching dynamics: QGD = 5.8 nC and Ciss = 2.7 nF enable fast, controlled turn-on/turn-off in thermally constrained 12–48 V automotive subsystems. Its true logic-level gate (VGS(th) ≥ 0.5 V at 175 °C) ensures reliable enhancement-mode operation with standard 5 V microcontroller outputs.
The device integrates a monolithic source-drain diode (VSD = 0.81 V at IS = 10 A, Tj = 25 °C) and supports unclamped inductive switching with EAS = 45.4 mJ - critical for motor and solenoid load management where freewheeling energy must be safely absorbed without external components.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum drain-source blocking voltage compatible with 48 V automotive architectures and transient overvoltage margins. |
| RDS(on) | 22.2–27 mΩ @ VGS = 5 V, Tj = 25 °C - Enables <1 W conduction loss at 37 A continuous current, reducing heatsink requirements. |
| ID | 37 A @ Tmb = 25 °C - Sustained current capability suitable for high-power lamp and motor drivers without forced cooling. |
| Rth(j-mb) | 1.58 K/W - Low junction-to-mounting-base thermal resistance enables efficient PCB copper pour heat spreading in space-constrained modules. |
| QGD | 5.8 nC - Gate-drain charge directly governs Miller plateau duration; enables predictable 23.9 ns td(off) with 5 Ω gate resistor. |
| EAS | 45.4 mJ - Single-pulse avalanche energy rating allows safe operation during inductive load turn-off without snubber networks. |
| VGS(th) | ≥0.5 V @ Tj = 175 °C - Ensures guaranteed turn-on margin under worst-case hot-cranking conditions in engine bay environments. |
Pinout & Package
LFPAK56 (SOT669) is a 4-lead surface-mount power package with exposed mounting base connected to drain, optimized for high-current density and low-inductance PCB layout. Thermal performance relies on soldered mounting base contact to copper thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate (G) | Single gate input with 17.1 nC total gate charge; requires low-impedance drive to minimize switching losses. |
| Mounting base | Drain (D) | Exposed copper pad electrically and thermally connected to drain; must be soldered to PCB thermal plane for rated Ptot = 95 W. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability across -55 °C to +175 °C ambient, including temperature cycling and HTRB testing. |
| Repetitive avalanche rating | Rated for repeated unclamped inductive switching events without degradation - eliminates need for external clamping diodes in solenoid drivers. |
| True logic-level gate | VGS(th) remains ≥0.5 V up to 175 °C junction temperature, ensuring compatibility with 3.3 V/5 V MCU GPIOs even under hood-hot conditions. |
| Thermal robustness | 175 °C max junction temperature and 1.58 K/W Rth(j-mb) support operation in sealed transmission control units with minimal airflow. |
| Low RDS(on) drift | RDS(on) increases only 3× from 22.2 mΩ (25 °C) to 67.8 mΩ (175 °C), preserving efficiency in high-temperature duty cycles. |
Applications
| Transmission Control Module | Engine Start-Stop Solenoid Driver |
|---|---|
|
Use Scenario: High-reliability switching of hydraulic pressure control valves inside automatic transmission valve bodies. IC Role / Device Role / Timing Role: Power switch controlling 12–24 V solenoid coils with 100 ms–2 s dwell times and frequent PWM modulation. Use Value: Repetitive avalanche rating absorbs back-EMF without snubbers; 175 °C rating sustains operation near hot gearbox oil. |
Use Scenario: Driving starter motor engagement solenoids in 12 V start-stop systems subject to cranking transients and thermal soak. IC Role / Device Role / Timing Role: High-current (30+ A) DC switch activated by BCM microcontroller with 5 V logic output. Use Value: True logic-level gate ensures turn-on during low-battery cranking (down to 6 V system); 150 A peak current handles inrush. |
| Electric Power Steering Motor Phase Switch | LED Headlamp High-Beam Dimming |
|
Use Scenario: Half-bridge phase leg in 24 V EPS motor controllers requiring fast, low-loss switching and fault tolerance. IC Role / Device Role / Timing Role: Low-side switching element handling 30 A continuous phase current with 20 kHz PWM commutation. Use Value: Low QGD/Ciss ratio minimizes shoot-through risk; integrated body diode enables synchronous rectification. |
Use Scenario: PWM dimming of high-intensity LED arrays in adaptive front lighting systems (AFS) with thermal derating constraints. IC Role / Device Role / Timing Role: High-efficiency series pass switch modulating 48 V LED strings at 1–5 kHz with <1% duty cycle resolution. Use Value: 27 mΩ RDS(on) limits conduction loss to <0.5 W at 4 A; 1.58 K/W thermal resistance maintains LED color stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V VDS, 2.2 mΩ RDS(on) @ 10 V, LFPAK56 package, AEC-Q101 qualified | Limited to 60 V systems; superior RDS(on) but requires 10 V gate drive - not logic-level compatible | Select when higher voltage margin is unnecessary and gate drive can supply ≥8 V; avoid in 5 V MCU-only designs. |
| IRF100P217 | 100 V VDS, 1.7 mΩ RDS(on) @ 10 V, TO-220FP package, AEC-Q101 qualified | Higher voltage rating but larger through-hole package; no logic-level gate (VGS(th) = 2.0–4.0 V) | Choose for legacy board designs needing 100 V headroom and manual assembly; not suitable for dense SMT layouts or 3.3 V logic. |
Compared with STL220N6F7 and IRF100P217, BUK9Y25-80E uniquely balances 80 V rating, true 5 V logic-level operation, and LFPAK56 thermal performance - making it optimal for new SMT-based automotive modules where gate drive simplicity and thermal density are prioritized over ultra-low RDS(on).
Availability
BUK9Y25-80E is available at Aetrix Electronics and suitable for automotive transmission control, engine start-stop solenoid actuation, and electric power steering motor phase switching requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BUK9Y25-80E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.
BUK9Y25-80E belongs to Nexperia's LFPAK automotive MOSFET portfolio, engineered specifically for thermally demanding, safety-critical vehicle subsystems where AEC-Q101 compliance, avalanche ruggedness, and logic-level gate drive are mandatory.
FAQ
Is BUK9Y25-80E suitable for 48 V mild-hybrid automotive systems?
Yes. Its 80 V VDS rating provides 2× margin over nominal 48 V bus voltage and accommodates load-dump transients up to 65 V per ISO 7637-2. The 175 °C junction rating and AEC-Q101 qualification confirm suitability for under-hood placement in 48 V architectures.
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 1 in the datasheet, the continuous drain current is 26.5 A at Tmb = 100 °C and VGS = 5 V. This reflects thermal derating due to reduced heat dissipation capacity at elevated PCB temperatures - critical for sealed module designs.
Does BUK9Y25-80E require a gate resistor for driving with a 5 V microcontroller?
Yes. A gate resistor (typically 5–10 Ω) is required to control dV/dt and prevent oscillation during switching. With QG(tot) = 17.1 nC and typical MCU GPIO drive strength (~20 mA), a 5 Ω resistor yields ~10 ns rise time - matching the specified tr = 17.2 ns.
Can the mounting base be left unconnected for low-power evaluation?
No. The mounting base is electrically connected to the drain terminal and serves as the primary thermal path. Leaving it unconnected violates Absolute Maximum Ratings, risks thermal runaway at >1 W dissipation, and invalidates the 95 W Ptot specification - full soldering to a thermal pad is mandatory for rated operation.
BUK9Y25-80E,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.1 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2703 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 95W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
BUK9Y25-80E,115 FAQ
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7.What is the process for return or replacement of BUK9Y25-80E,115?
All BUK9Y25-80E,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y25-80E,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9Y25-80E,115 part is unused and in its original packaging.
Return procedure for BUK9Y25-80E,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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