Nexperia USA Inc. BUK9Y30-75B,115
- Part No.:
- BUK9Y30-75B,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
BUK9Y30-75B,115.pdf
- Description:
- MOSFET N-CH 75V 34A LFPAK56
- Quantity:
- Payment:

- Shipping:

Inventory:1,709
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Product details
Overview
BUK9Y30-75B,115 from Nexperia is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 75 V VDS, 34 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 25 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, and is AEC-Q101 qualified for automotive critical power switching in 12 V/24 V/42 V systems.
For engineers reviewing the BUK9Y30-75B,115 datasheet, BUK9Y30-75B,115 pinout, BUK9Y30-75B,115 application, or BUK9Y30-75B,115 equivalent, key selection criteria include logic-compatible gate drive (VGS(th) = 1.1–2.0 V), avalanche ruggedness (78 mJ), thermal resistance (Rth(j-mb) = 1.8 K/W), and SOT669 mounting-base thermal interface for high-power density layouts.
Technical Context
This device uses TrenchMOS technology to achieve low conduction losses and stable switching performance across -55 °C to +175 °C operating range. Its gate threshold voltage remains functional down to 0.5 V at Tj = 175 °C, enabling reliable turn-on under hot-cranking conditions in automotive environments.
The integrated source-drain diode supports freewheeling in inductive loads with VSD = 0.85 V at IS = 25 A and Tj = 25 °C, while dynamic parameters-including QGD = 9 nC and Ciss = 1550–2070 pF-support efficient PWM control up to several hundred kHz in motor and lamp drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum drain-source blocking voltage; supports 42 V automotive systems with margin against load dump transients. |
| RDS(on) | 25 mΩ @ VGS = 5 V, ID = 15 A, Tj = 25 °C - Enables <1 W conduction loss at 20 A, reducing heatsink requirements. |
| ID (cont) | 34 A @ Tmb = 25 °C - High current capability in compact LFPAK package with direct-mounting base for thermal transfer. |
| EAS | 78 mJ non-repetitive avalanche energy - Withstands unclamped inductive switching events without failure in solenoid or motor control. |
| Rth(j-mb) | 1.8 K/W - Low thermal resistance from junction to mounting base enables >60 W dissipation with moderate heatsinking. |
| VGS(th) | 1.1–2.0 V @ Tj = 25 °C - Logic-level gate drive compatible with 3.3 V and 5 V microcontrollers without level-shifting. |
| QGD | 9 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency. |
Pinout & Package
Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base connected to drain for enhanced thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 - S | Source | Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications. |
| 4 - G | Gate | Single gate input optimized for low-impedance drive; layout must minimize trace inductance to suppress ringing. |
| Mounting base - D | Drain | Exposed copper pad electrically and thermally connected to drain; requires soldered thermal pad on PCB for Rth(j-mb) performance. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages. |
| 175 °C maximum junction temperature | Enables operation in under-hood environments where ambient exceeds 125 °C, with derating per Figure 1. |
| Low RDS(on) at logic-level VGS | 25 mΩ @ 5 V ensures full enhancement with standard MCU GPIOs, eliminating need for gate drivers in many 12–24 V loads. |
| High avalanche ruggedness | 78 mJ EAS allows robust handling of inductive kickback in solenoid and brushed DC motor commutation. |
| LFPAK thermal design | Mounting base-to-PCB thermal path achieves 1.8 K/W Rth(j-mb), outperforming SO-8 and DPAK in power density. |
Applications
| Automotive Body Control Module | Industrial Motor Starter |
|---|---|
|
Use Scenario: Driving 12 V/24 V door locks, seat adjusters, and HVAC actuators in vehicle body control units. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling inductive solenoid loads with PWM or on/off duty cycles. Use Value: AEC-Q101 qualification and 175 °C rating ensure reliability over vehicle lifetime; low RDS(on) reduces board-level heating in space-constrained modules. |
Use Scenario: Starting and stopping 24 V brushed DC motors in factory automation conveyors and valve actuators. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge or half-bridge configuration, handling peak currents up to 137 A. Use Value: 78 mJ avalanche energy absorbs back-EMF during abrupt shutdown; fast turn-off (tf = 83 ns) enables precise speed control. |
| LED Headlamp Driver | 42 V Mild Hybrid System Load Switch |
|
Use Scenario: Constant-current switching for high-brightness LED arrays in adaptive front lighting systems (AFS). IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating average LED current via duty cycle modulation. Use Value: Low QGD (9 nC) and Ciss (1550–2070 pF) support clean 1–10 kHz switching with minimal gate drive loss and EMI. |
Use Scenario: Main power distribution switch for 42 V subsystems in 48 V mild hybrid vehicles (e.g., starter-generator, DC-DC converters). IC Role / Device Role / Timing Role: Protected load switch managing battery-to-load connection with overcurrent and thermal monitoring. Use Value: 75 V VDS rating provides 13 V margin above 42 V nominal, accommodating ISO 16750-2 load dump transients up to 60 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V VDS, 220 A ID, 0.75 mΩ RDS(on) @ 10 V - higher current, lower voltage, not AEC-Q101 qualified. | Targeted at 12 V high-current industrial inverters, not automotive 42 V systems. | Select only for non-automotive 12 V applications requiring ultra-low RDS(on); lacks automotive qualification and 75 V rating. |
| Infineon BSC014N04LS6 | 40 V VDS, 100 A ID, 1.4 mΩ RDS(on) @ 10 V - lower voltage, higher current, AEC-Q101 qualified. | Optimized for 12 V/24 V server PSUs and e-bike controllers, not 42 V load dump compliance. | Use when 40 V rating suffices and higher current density is needed; does not meet 42 V system transient margin requirements. |
Compared with STL220N4F7AG and BSC014N04LS6, the BUK9Y30-75B,115 uniquely balances 75 V rating, AEC-Q101 qualification, logic-level drive, and LFPAK thermal performance for 42 V automotive power switching-neither alternative meets all three requirements simultaneously.
Availability
BUK9Y30-75B,115 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor starters, LED headlamp drivers, and 42 V mild hybrid system load switches requiring stable component supply and long-term lifecycle support.
Supply support for BUK9Y30-75B,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-grade components and advanced packaging.
The BUK9Y series belongs to Nexperia's AEC-Q101-qualified logic-level TrenchMOS portfolio, engineered specifically for thermally demanding automotive power switching applications requiring robustness, low gate drive voltage, and high avalanche capability.
FAQ
What is the maximum continuous drain current for BUK9Y30-75B,115 at 100 °C mounting base temperature?
At Tmb = 100 °C, the maximum continuous drain current is 24 A, as specified in Table 4 (Limiting Values). This derating reflects thermal constraints in high-ambient environments and must be verified using Figure 1 in the datasheet for precise thermal design.
Does BUK9Y30-75B,115 require a gate resistor for safe switching in automotive applications?
Yes-a gate resistor (typically 5–20 Ω) is recommended to control dV/dt and suppress oscillation during switching, especially given its low QGD (9 nC) and high-speed characteristics (tf = 83 ns). The datasheet specifies RG(ext) = 10 Ω for timing measurements in Figure 14.
Can BUK9Y30-75B,115 be used in high-side switching configurations?
Yes-it supports high-side switching when paired with a gate driver capable of providing VGS ≥ 5 V relative to the source node. Its logic-level threshold (VGS(th) ≤ 2.0 V) and 15 V absolute maximum VGS allow compatibility with bootstrap or isolated gate drivers in 12–42 V systems.
Is the mounting base electrically isolated from the drain terminal?
No-the mounting base is internally connected to the drain (as confirmed in Table 2 Pinning and Figure 17 package outline). PCB layout must treat the exposed pad as a high-voltage drain node and ensure adequate creepage/clearance to other traces or planes.
BUK9Y30-75B,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2070 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 85W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
BUK9Y30-75B,115 FAQ
1.How can I place an order for BUK9Y30-75B,115 through Aetrix?
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6.How does Aetrix verify that BUK9Y30-75B,115 is sourced from the original manufacturer or authorized distributors?
All BUK9Y30-75B,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y30-75B,115 meets industry standards.
7.What is the process for return or replacement of BUK9Y30-75B,115?
All BUK9Y30-75B,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y30-75B,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9Y30-75B,115 part is unused and in its original packaging.
Return procedure for BUK9Y30-75B,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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