Nexperia USA Inc. BUK9Y30-75B/C2,115
- Part No.:
- BUK9Y30-75B/C2,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
BUK9Y30-75B/C2,115.pdf
- Description:
- MOSFET N-CH 75V 34A LFPAK56
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BUK9Y30-75B/C2,115 from Nexperia is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 75 V VDS, 34 A continuous drain current at Tmb = 25 °C, and 175 °C junction temperature. It delivers 25 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, and is AEC-Q101 qualified for automotive critical power switching in 12 V/24 V/42 V systems.
For engineers reviewing the BUK9Y30-75B/C2,115 datasheet, BUK9Y30-75B/C2,115 pinout, BUK9Y30-75B/C2,115 application, or BUK9Y30-75B/C2,115 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.1–2.0 V), avalanche ruggedness (78 mJ unclamped), thermal resistance (Rth(j-mb) = 1.8 K/W), and SOT669 mounting-base thermal interface design.
Technical Context
This device uses TrenchMOS technology to achieve low conduction losses and high thermal robustness. Its gate threshold voltage (VGS(th)) ranges from 0.5 V at Tj = 175 °C to 2.3 V at Tj = –55 °C, enabling stable turn-on across automotive temperature extremes. The integrated source-drain diode supports freewheeling in inductive loads with VSD = 0.85 V at IS = 25 A and Tj = 25 °C.
Dynamic performance is defined by QG(tot) = 19 nC, QGD = 9 nC, and Ciss = 1550–2070 pF, supporting efficient switching in motor control and load management circuits. Avalanche capability is validated per non-repetitive conditions (ID = 34 A, Vsup ≤ 75 V, RGS = 50 Ω), with energy rating of 78 mJ at Tj(init) = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum drain-source blocking voltage; supports 42 V automotive bus with margin. |
| RDS(on) | 25 mΩ @ VGS = 5 V, ID = 15 A, Tj = 25 °C - Enables <1 W conduction loss at 20 A, reducing heatsink requirements. |
| ID (cont) | 34 A @ Tmb = 25 °C - High-current capability suitable for direct battery-fed solenoid or lamp drivers. |
| Tj max | 175 °C - Extended junction temperature rating enables operation in under-hood environments without derating. |
| Rth(j-mb) | 1.8 K/W - Low thermal resistance from junction to mounting base improves power dissipation efficiency on PCB copper pads. |
| EAS | 78 mJ - Unclamped avalanche energy rating allows safe inductive switching without external snubbers in relay/motor applications. |
| VGS(th) | 1.1–2.0 V @ Tj = 25 °C - Logic-level threshold ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs. |
Pinout & Package
Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base connected to drain for enhanced thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-pulse applications. |
| 4 | Gate (G) | Single gate input optimized for low-impedance drive; QGD = 9 nC minimizes Miller effect during switching. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically and thermally connected to drain; requires soldered PCB thermal pad for Rth(j-mb) = 1.8 K/W. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive safety-critical applications including engine control, body electronics, and ADAS power stages. |
| Logic-level gate drive | VGS(th) ≤ 2.0 V at 25 °C enables direct interface with 3.3 V/5 V MCUs without level-shifting circuitry. |
| 175 °C junction rating | Supports sustained operation in high-ambient under-hood locations without thermal shutdown or parameter drift. |
| Low RDS(on) × QG figure-of-merit | 25 mΩ × 19 nC = 475 mΩ·nC - Balances conduction and switching losses for high-efficiency 10–100 kHz PWM control. |
| Integrated source-drain diode | VSD = 0.85 V @ 25 A enables freewheeling in brushed DC motors and solenoids without external diodes. |
Applications
| Automotive Body Control Module (BCM) | Engine Management System Load Driver |
|---|---|
|
Use Scenario: Switching 12 V headlamp, fog lamp, or HVAC blower motor in BCM subassembly. IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by 5 V MCU GPIO with PWM dimming capability. Use Value: 25 mΩ RDS(on) limits I²R loss to <13 W at 23 A peak, eliminating need for discrete heatsinks on compact PCBs. |
Use Scenario: Driving fuel injector or ignition coil primary winding in 12 V/24 V engine control units. IC Role / Device Role / Timing Role: Fast-switching low-side driver with 16 ns td(on) and 83 ns tf for precise pulse-width control. Use Value: 78 mJ avalanche energy rating absorbs inductive kickback without clamping diodes, simplifying layout and improving reliability. |
| Commercial Vehicle 24 V/42 V Power Distribution | Industrial Solenoid & Valve Actuation |
|
Use Scenario: Centralized power distribution unit managing multiple 24 V/42 V auxiliary loads (winch, PTO, air compressor). IC Role / Device Role / Timing Role: High-current protected switch with overtemperature and overcurrent monitoring via sense-FET variants (not this part). Use Value: 175 °C Tj rating and 34 A continuous current support long-duration duty cycles in thermally constrained chassis-mount enclosures. |
Use Scenario: On/off control of hydraulic/pneumatic solenoid valves in factory automation or agricultural machinery. IC Role / Device Role / Timing Role: Robust low-side switch handling repetitive 100 ms–2 s pulses with high peak current (IDM = 137 A). Use Value: Three-source-pin configuration reduces parasitic inductance, minimizing voltage overshoot during fast turn-off in inductive loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V VDS, 220 A ID, RDS(on) = 1.2 mΩ @ 10 V - higher current, lower voltage, different gate drive requirement. | Designed for 12 V battery systems only; unsuitable for 24 V/42 V automotive loads due to lower VDS. | Select only if operating strictly within 12 V nominal systems and requiring >100 A pulsed current capability. |
| ON Semiconductor NTMFS4C09NT1G | 30 V VDS, 100 A ID, RDS(on) = 1.4 mΩ @ 10 V - lower voltage rating, higher current, not AEC-Q101 qualified. | Lacks automotive qualification; intended for industrial/commercial power supplies, not safety-critical vehicle subsystems. | Acceptable for non-automotive 12 V high-current switching where AEC-Q101 compliance is not required. |
Compared with STL220N4F7AG and NTMFS4C09NT1G, the BUK9Y30-75B/C2,115 uniquely combines 75 V rating, AEC-Q101 qualification, logic-level gate drive, and SOT669 thermal performance-making it the only option for 24 V/42 V automotive load switching where reliability, temperature range, and gate simplicity are jointly critical.
Availability
BUK9Y30-75B/C2,115 is available at Aetrix Electronics and suitable for automotive body control modules, engine management system load drivers, and commercial vehicle 24 V/42 V power distribution requiring stable component supply and long-term lifecycle support.
Supply support for BUK9Y30-75B/C2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.
The BUK9Y series belongs to Nexperia's automotive-qualified TrenchMOS logic-level power FET product line, engineered specifically for robust, thermally efficient switching in 12 V–42 V automotive power networks and safety-critical electronic control units.
FAQ
What is the maximum continuous drain current for BUK9Y30-75B/C2,115 at 100 °C mounting base temperature?
At Tmb = 100 °C and VGS = 5 V, the maximum continuous drain current is 24 A, as specified in Table 4 (Limiting Values). This reflects thermal derating from the 34 A rating at 25 °C, consistent with the normalized ID vs. Tmb curve in Figure 1.
Is BUK9Y30-75B/C2,115 suitable for high-frequency PWM motor control above 50 kHz?
Yes - with QG(tot) = 19 nC, QGD = 9 nC, and tf = 83 ns, the device supports efficient switching up to ~100 kHz in hard-switched topologies. However, gate drive strength (≥1 A peak) and PCB layout (minimized loop inductance) are essential to maintain efficiency and avoid oscillation.
Does the mounting base (drain) require electrical isolation from the PCB ground plane?
No - the mounting base is electrically connected to the drain terminal and must be routed as a high-voltage node. It should be isolated from other nets (especially source and gate) using adequate creepage/clearance; thermal connection to a large copper pour is recommended for heat dissipation but no galvanic isolation is needed unless system topology demands drain-referenced grounding.
Can BUK9Y30-75B/C2,115 replace older BUK9Y30-75B versions in existing designs?
Yes - the /C2,115 suffix denotes tape-and-reel packaging per ordering code BUK9Y30-75B/C2,115; electrically and thermally identical to BUK9Y30-75B. Pinout, ratings, and SOA (Figure 4) are unchanged per Rev. 04 datasheet, enabling drop-in replacement without redesign.
BUK9Y30-75B/C2,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 34A
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 2070 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
BUK9Y30-75B/C2,115 FAQ
1.How can I place an order for BUK9Y30-75B/C2,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9Y30-75B/C2,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9Y30-75B/C2,115 reliable?
The price and inventory of BUK9Y30-75B/C2,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9Y30-75B/C2,115 is usually 5 days.
3.What payment methods are accepted for BUK9Y30-75B/C2,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9Y30-75B/C2,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUK9Y30-75B/C2,115?
BUK9Y30-75B/C2,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUK9Y30-75B/C2,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUK9Y30-75B/C2,115?
For technical support, including BUK9Y30-75B/C2,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9Y30-75B/C2,115 requirements.
6.How does Aetrix verify that BUK9Y30-75B/C2,115 is sourced from the original manufacturer or authorized distributors?
All BUK9Y30-75B/C2,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y30-75B/C2,115 meets industry standards.
7.What is the process for return or replacement of BUK9Y30-75B/C2,115?
All BUK9Y30-75B/C2,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y30-75B/C2,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9Y30-75B/C2,115 part is unused and in its original packaging.
Return procedure for BUK9Y30-75B/C2,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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