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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BUK9Y41-80E,115

Name: BUK9Y41-80E,115
Brand: Nexperia USA Inc.
SKU: BUK9Y41-80E,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUK9Y41-80E,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: BUK9Y41-80E,115.pdf

Description:: MOSFET N-CH 80V 24A LFPAK56

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Product details

Overview

BUK9Y41-80E from Nexperia is an AEC-Q101 qualified N-channel logic-level MOSFET in LFPAK56 (SOT669) package, rated for 80 V V_DS, 45 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, with 24 A continuous drain current at T_mb = 25 °C and 175 °C maximum junction temperature - deployed in automotive transmission control and 12–48 V solenoid switching.

For engineers reviewing the BUK9Y41-80E datasheet, BUK9Y41-80E pinout, BUK9Y41-80E application, or BUK9Y41-80E equivalent, key selection criteria include its true logic-level gate (V_GS(th) > 0.5 V at 175 °C), repetitive avalanche rating, 2.33 K/W R_th(j-mb), and LFPAK56 thermal performance in thermally constrained automotive modules.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low R_DS(on) while maintaining robustness under high-temperature operation up to 175 °C. Its gate threshold voltage remains functional across full temperature range, enabling reliable 5 V microcontroller drive without level-shifting.

The device features integrated source-drain diode with 21.3 ns t_rr and 22 nC Q_r, supporting fast-switching DC-DC and motor commutation. Mounting base (drain-connected) enables direct thermal coupling to heatsink, supported by transient thermal impedance data down to 10 µs pulses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage compatible with 48 V automotive systems and transient overvoltage tolerance.
R_DS(on)	45 mΩ max at V_GS = 5 V, T_j = 25 °C - Enables low conduction loss in high-current solenoid drivers (e.g., <1.1 W loss at 5 A).
I_D	24 A continuous at T_mb = 25 °C - Supports high-power loads such as HVAC actuators and starter relays without external heatsinking.
P_tot	64 W at T_mb = 25 °C - High power density enabled by LFPAK56 copper-clip construction and low R_th(j-mb).
R_th(j-mb)	2.33 K/W - Direct thermal path from junction to mounting base allows efficient heat transfer to PCB copper or heatsink.
Q_GD	4.3 nC - Low gate-drain charge reduces switching losses and improves EMI behavior in 100 kHz–500 kHz PWM applications.
t_r/t_f	11.2 ns / 10.5 ns - Fast edge rates support high-frequency switching in compact DC-DC converters and BLDC gate drivers.

Pinout & Package

LFPAK56 (SOT669) is a surface-mount, copper-clip power package with exposed drain mounting base for enhanced thermal and electrical performance. It provides 4 solder terminals plus integral drain pad (mb), optimized for automated assembly and high-reliability automotive environments.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source leads reduce bond-wire inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input with low input capacitance (C_iss = 1180–1570 pF) for stable 5 V MCU drive and minimal gate drive power.
mb	Mounting Base (Drain)	Exposed copper drain pad electrically and thermally connected to internal die - must be soldered to PCB copper pour or heatsink.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST - suitable for engine bay and transmission control units.
Repetitive avalanche rated	Rated for unclamped inductive switching events up to 25 mJ per pulse - eliminates need for external snubbers in solenoid and motor flyback circuits.
True logic-level gate	V_GS(th) ≥ 0.5 V at T_j = 175 °C ensures turn-on margin even under worst-case thermal stress, avoiding unintended shutdown.
175 °C maximum junction temperature	Enables operation in under-hood environments where ambient exceeds 125 °C - extends system lifetime versus 150 °C-rated alternatives.
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~3.5× from 25 °C to 175 °C (113 mΩ max) - maintains predictable conduction loss across full operating range.

Applications

Automotive Transmission Control

12 V/24 V Solenoid Driver

Use Scenario: High-duty-cycle on/off control of hydraulic pressure solenoids in automatic transmission valve bodies.

IC Role / Device Role / Timing Role: Power switch handling 15–20 A pulsed loads with 10–100 ms ON times and strict thermal management requirements.

Use Value: 2.33 K/W R_th(j-mb) and 175 °C rating allow sustained operation without derating in confined transmission control module enclosures.

Use Scenario: Driving fuel injector or brake caliper solenoids in 12 V or 24 V chassis systems with tight space constraints.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (16.1 ns t_d(off)) to minimize coil energy dissipation during deactivation.

Use Value: Repetitive avalanche rating absorbs inductive kickback without external clamping, reducing BOM count and PCB area.

48 V Mild Hybrid DC-DC Converter

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Synchronous rectification in 48 V–12 V bidirectional buck-boost converters for 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: Secondary-side power MOSFET operating at 200–300 kHz with low Q_GD (4.3 nC) to minimize switching loss and gate drive complexity.

Use Value: 45 mΩ R_DS(on) at 5 V drive enables >95% efficiency at 10–15 A output without gate boosting circuitry.

Use Scenario: Half-bridge phase leg in 3-phase EPS motor driver, switching up to 30 A peak currents with high thermal cycling.

IC Role / Device Role / Timing Role: High-side or low-side switch in inverter stage, requiring robust short-circuit withstand and fast recovery diode behavior.

Use Value: Source-drain diode with 21.3 ns t_rr and 22 nC Q_r supports clean freewheeling during PWM dead-time, reducing shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	80 V, 2.2 mΩ R_DS(on) at V_GS = 10 V; requires 10 V gate drive; not logic-level; TO-263 package.	Higher efficiency at high current but incompatible with 5 V MCU drive; larger footprint and higher R_th(j-case) (3.5 K/W).	Select only if gate drive voltage ≥ 10 V is available and thermal interface permits TO-263 mounting.
ON Semiconductor NTMFS4C09NT1G	80 V, 4.8 mΩ R_DS(on) at V_GS = 10 V; logic-level capable down to 4.5 V; SO-8FL package; R_th(j-mb) = 3.0 K/W.	Lower R_DS(on) but higher thermal resistance and no AEC-Q101 qualification - limited to non-safety-critical cabin modules.	Use only in non-AEC-Q101 applications where 5 V drive margin is sufficient and thermal budget allows 30% higher junction rise.

Compared with STL220N4F7AG and NTMFS4C09NT1G, BUK9Y41-80E uniquely combines AEC-Q101 compliance, true 5 V logic-level operation, 2.33 K/W thermal resistance, and repetitive avalanche capability - making it the only drop-in solution for thermally demanding, safety-critical 12–48 V automotive power switches.

Availability

BUK9Y41-80E is available at Aetrix Electronics and suitable for automotive transmission control, 48 V mild hybrid DC-DC conversion, and electric power steering motor phase switching requiring stable component supply and long-term lifecycle assurance.

Supply support for BUK9Y41-80E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - spun off from Philips and now part of Wingtech Technology.

BUK9Y41-80E belongs to Nexperia's Automotive Logic-Level MOSFET product line, engineered specifically for AEC-Q101-compliant, thermally aggressive automotive power switching applications where 5 V drive and avalanche ruggedness are mandatory.

FAQ

Is BUK9Y41-80E compatible with 3.3 V microcontroller gate drive?

No. While classified as "logic level", BUK9Y41-80E requires minimum V_GS = 4.5 V for guaranteed R_DS(on) ≤ 45 mΩ. At 3.3 V, R_DS(on) rises above 100 mΩ and V_GS(th) margin becomes insufficient at elevated temperatures - use only with 5 V or higher gate drive sources.

What is the maximum allowable PCB copper area for the mounting base (mb) pad?

The mounting base pad should occupy ≥ 200 mm² of 2 oz (70 µm) copper on inner or outer layer, with ≥ 4 thermal vias (0.3 mm diameter, filled or plated) connecting to internal ground/power planes. This achieves near-datasheet R_th(j-mb) = 2.33 K/W; smaller areas increase thermal resistance proportionally.

Does BUK9Y41-80E require external gate resistor for automotive solenoid driving?

Yes - a 5–10 Ω series gate resistor is recommended to damp ringing caused by parasitic inductance in high-di/dt solenoid circuits. The device's low Q_GD (4.3 nC) and fast t_f (10.5 ns) make it susceptible to oscillation without controlled gate edge rates.

Can BUK9Y41-80E replace BUZ70 in existing designs?

No - BUZ70 is a TO-220 packaged 500 V MOSFET with 0.5 Ω R_DS(on), intended for mains-voltage SMPS. BUK9Y41-80E is an 80 V, 45 mΩ automotive-qualified LFPAK56 device. Voltage, package, qualification, and application domains are incompatible; substitution would compromise safety and reliability.

BUK9Y41-80E,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 41mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 11.9 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 64W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

BUK9Y41-80E,115 FAQ

1.How can I place an order for BUK9Y41-80E,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9Y41-80E,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9Y41-80E,115 reliable?

The price and inventory of BUK9Y41-80E,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9Y41-80E,115 is usually 5 days.

3.What payment methods are accepted for BUK9Y41-80E,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9Y41-80E,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9Y41-80E,115?

BUK9Y41-80E,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9Y41-80E,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9Y41-80E,115?

For technical support, including BUK9Y41-80E,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9Y41-80E,115 requirements.

6.How does Aetrix verify that BUK9Y41-80E,115 is sourced from the original manufacturer or authorized distributors?

All BUK9Y41-80E,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y41-80E,115 meets industry standards.

7.What is the process for return or replacement of BUK9Y41-80E,115?

All BUK9Y41-80E,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y41-80E,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9Y41-80E,115 part is unused and in its original packaging.

Return procedure for BUK9Y41-80E,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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