Nexperia USA Inc. BUK9Y4R8-60E,115

Overview

BUK9Y4R8-60E from Nexperia is an AEC-Q101-qualified N-channel logic-level MOSFET in LFPAK56 (SOT669) package, rated for 60 V V_DS, 4.8 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, and 175 °C junction operation. It delivers 100 A continuous drain current at T_mb = 25 °C and supports ultra-high-performance power switching in 12 V automotive systems.

For engineers reviewing the BUK9Y4R8-60E datasheet, BUK9Y4R8-60E pinout, BUK9Y4R8-60E application, or BUK9Y4R8-60E equivalent, key selection criteria include its true logic-level gate (V_GS(th) > 0.5 V at 175 °C), repetitive avalanche rating, and thermal robustness in thermally demanding automotive environments.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with Q_GD = 18.1 nC and t_f = 47 ns under specified conditions. Its LFPAK56 package provides a low 0.63 K/W R_th(j-mb), enabling high-power dissipation up to 238 W at T_mb = 25 °C.

The device features a monolithic source-drain diode with V_SD = 0.78 V at I_S = 25 A and T_j = 25 °C, and supports unclamped inductive switching with E_AS = 199 mJ at I_D = 100 A and T_j(init) = 25 °C.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a 4-lead plastic surface-mount package with exposed mounting base connected to drain. Its compact 5.8 × 4.1 mm footprint and 0.63 K/W thermal resistance support high-density, high-power automotive PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6F7 and IRF100P217, BUK9Y4R8-60E uniquely combines logic-level gate compatibility at 175 °C, AEC-Q101 qualification, and LFPAK56's superior thermal resistance-making it the only option qualified for direct MCU-driven solenoid/valve control in engine compartment locations.

Availability

BUK9Y4R8-60E is available at Aetrix Electronics and suitable for automotive transmission control, engine management solenoid actuation, and electric power steering motor phase switching requiring stable component supply and long-term automotive lifecycle support.

Supply support for BUK9Y4R8-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This part belongs to Nexperia's Automotive Logic-Level MOSFET product line, engineered specifically for AEC-Q101 compliance, high-temperature robustness, and low-loss switching in 12 V vehicle subsystems.

FAQ

Is BUK9Y4R8-60E suitable for high-side switching configurations?

Yes, BUK9Y4R8-60E supports high-side switching when paired with a gate driver capable of providing V_GS ≥ 5 V relative to the source node. Its 60 V V_DS rating and 175 °C operation allow use in 12 V battery-supplied high-side loads such as radiator fan controllers, provided gate drive voltage exceeds source potential by ≥5 V and remains within ±15 V absolute maximum ratings.

What is the maximum allowable mounting base temperature for continuous 100 A operation?

The datasheet specifies 100 A continuous drain current is valid only at T_mb = 25 °C (Fig. 2). At T_mb = 100 °C, continuous current is derated to 65 A. Full 100 A operation requires active thermal management to maintain the mounting base below 40 °C, as power dissipation scales with R_DS(on) and ambient conditions.

Does BUK9Y4R8-60E include integrated gate protection?

No, BUK9Y4R8-60E does not integrate gate protection circuitry. The device has ±15 V absolute maximum V_GS rating and 100 nA IGSS at 25 °C, but external Zener clamping (e.g., 12 V TVS) and series gate resistance (≥10 Ω) are recommended to prevent ESD damage and ringing during fast switching in automotive harness environments.

How does the source-drain diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.78 V at 25 A and T_j = 25 °C, with trr = 29 ns and Q_r = 28 nC. While slower and higher-V_F than optimized Schottky diodes, its monolithic integration eliminates layout parasitics and ensures matched thermal behavior-critical for synchronous rectification in compact automotive DC-DC converters where space and reliability outweigh marginal efficiency gains.