Nexperia USA Inc. BUK9Y65-100E,115
- Part No.:
- BUK9Y65-100E,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
BUK9Y65-100E,115.pdf
- Description:
- MOSFET N-CH 100V 19A LFPAK56
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BUK9Y65-100E from Nexperia is an AEC-Q101 qualified N-channel logic-level MOSFET in LFPAK56 (SOT669) package, rated for 100 V VDS, 65 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, with 175 °C maximum junction temperature and repetitive avalanche rating - deployed in automotive transmission control and high-reliability 12–48 V power switching.
For engineers reviewing the BUK9Y65-100E datasheet, BUK9Y65-100E pinout, BUK9Y65-100E application, or BUK9Y65-100E equivalent, this device is selected for thermally demanding automotive loads requiring true logic-level gate drive (VGS(th) > 0.5 V at 175 °C), low thermal resistance (Rth(j-mb) = 2.31 K/W), and robust unclamped avalanche energy (25.3 mJ).
Technical Context
This MOSFET uses TrenchMOS technology to achieve low RDS(on) while maintaining stable threshold voltage across temperature (0.5–2.1 V range). Its LFPAK56 package integrates a thermally optimized mounting base directly connected to drain, enabling efficient heat transfer to PCB copper.
The device supports fast switching with td(on) = 8.1 ns, tr = 13.6 ns, QGD = 6 nC, and features integrated source-drain diode with VSD = 0.81–1.2 V and trr = 29 ns - critical for flyback and inductive load commutation in automotive solenoid drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V automotive systems with 2× safety margin against transients. |
| RDS(on) | 65 mΩ max at VGS = 5 V, Tj = 25 °C - enables <1.6 W conduction loss at 5 A DC load current. |
| ID | 19 A continuous at Tmb = 25 °C - sufficient for high-current motor and lamp drivers without forced cooling. |
| Rth(j-mb) | 2.31 K/W - allows direct thermal coupling to PCB copper pour, reducing junction temperature rise by ~43 K/W vs SO-8. |
| EAS | 25.3 mJ non-repetitive avalanche energy - withstands inductive kickback in transmission valve control without external snubbers. |
| VGS(th) | ≥0.5 V at Tj = 175 °C - ensures reliable turn-on with standard 3.3 V/5 V microcontroller GPIOs under worst-case thermal stress. |
| QGD | 6 nC - limits Miller-induced shoot-through risk in half-bridge configurations with moderate gate drive strength. |
Pinout & Package
LFPAK56 (SOT669) is a surface-mount plastic package with exposed mounting base for enhanced thermal performance. The base is electrically connected to drain, enabling low-inductance, high-current routing and direct PCB thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate (G) | Single gate input with low input capacitance (Ciss = 1142–1523 pF) for fast, low-power driving. |
| Mounting Base | Drain (D) | Exposed copper pad tied to drain - serves as primary current path and thermal interface to PCB heatsink area. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per ISO 10605. |
| Repetitive avalanche rating | Enables operation in unclamped inductive switching without derating - eliminates need for external clamping diodes in many solenoid drivers. |
| 175 °C maximum junction temperature | Supports engine bay placement and sustained operation in sealed enclosures without active cooling. |
| True logic-level gate | VGS(th) ≥ 0.5 V at 175 °C ensures full enhancement with 3.3 V MCU outputs even under thermal stress. |
| Low Rth(j-mb) | 2.31 K/W enables >60% higher power dissipation than standard SO-8 at same board area, reducing thermal design overhead. |
Applications
| Automotive Transmission Control | 12 V/24 V Lamp Driver |
|---|---|
|
Use Scenario: PWM-controlled hydraulic solenoid valves in automatic transmission modules operating at 125 °C ambient. IC Role / Device Role / Timing Role: High-side or low-side power switch handling 8–12 A peak current with 20 kHz switching and fast fall time (tf = 12.6 ns). Use Value: Repetitive avalanche rating absorbs inductive energy during rapid valve de-energization, eliminating external TVS and reducing BOM count. |
Use Scenario: Headlamp and fog lamp dimming in modern LED+halogen hybrid lighting systems. IC Role / Device Role / Timing Role: Low-side switch controlling up to 15 A resistive load with 100 µs overcurrent response via integrated current sensing capability. Use Value: 65 mΩ RDS(on) minimizes self-heating at 10 A, enabling compact 2-layer PCB layout without heatsinks. |
| 48 V Mild Hybrid Starter Generator | Electric Power Steering (EPS) Motor Phase Switch |
|
Use Scenario: Pre-charge and main contactor replacement in 48 V battery management systems for mild hybrid vehicles. IC Role / Device Role / Timing Role: High-voltage, high-current power switch with 100 V rating and 76 A pulsed current capability (tp ≤ 10 µs). Use Value: 100 V VDS provides 2× margin over nominal 48 V bus, accommodating load dump transients up to 85 V per ISO 7637-2. |
Use Scenario: Inverter phase leg switching in brushless DC motor control for EPS systems with 150 °C under-hood ambient. IC Role / Device Role / Timing Role: Low-side MOSFET in three-phase bridge with fast switching (tr/tf < 15 ns) and low QGD to minimize cross-conduction losses. Use Value: 175 °C Tj rating and 2.31 K/W thermal resistance allow sustained 10 A RMS operation on standard FR-4 with 2 oz copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 2.2 mΩ RDS(on) at VGS = 10 V; requires 10 V gate drive; no AEC-Q101 certification stated. | Higher efficiency at high current but unsuitable for 3.3 V logic-level drive; not qualified for automotive use. | Select only if system uses 10 V gate driver and operates outside AEC-Q101 scope. |
| ON Semiconductor NTMFS5C675NL | 100 V, 5.2 mΩ RDS(on) at VGS = 10 V; LFPAK56 package; AEC-Q101 qualified; VGS(th) min = 2.0 V. | Better conduction loss at high current, but higher VGS(th) prevents reliable turn-on with 3.3 V MCUs at elevated temperature. | Prefer when gate drive is ≥5 V and thermal margin is less constrained; avoid where 3.3 V logic-level operation is mandatory. |
Compared with STL220N10F7 and NTMFS5C675NL, BUK9Y65-100E uniquely balances AEC-Q101 compliance, true 3.3 V logic-level operation, and 65 mΩ RDS(on) - making it optimal for space-constrained, thermally aggressive automotive body electronics where gate drive voltage and qualification are non-negotiable.
Availability
BUK9Y65-100E is available at Aetrix Electronics and suitable for automotive transmission control, 48 V mild hybrid contactor replacement, and electric power steering motor phase switching requiring stable component supply across extended product lifecycles.
Supply support for BUK9Y65-100E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - spun off from Philips and now part of Wingtech Group.
This device belongs to Nexperia's Automotive Logic-Level Power MOSFET product line, engineered specifically for AEC-Q101-compliant, thermally robust switching in 12–48 V automotive subsystems where gate drive simplicity and ruggedness are critical.
FAQ
Is BUK9Y65-100E suitable for high-side switching configurations?
No - the LFPAK56 mounting base is internally connected to drain, and the package lacks isolated source terminals required for floating high-side gate drive. It is designed exclusively for low-side or common-source switching where drain can be referenced to ground or high-voltage rail via PCB copper.
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 1 in the datasheet, the maximum continuous drain current is 13.4 A at Tmb = 100 °C and VGS = 5 V. This reflects thermal derating due to reduced heat transfer efficiency at elevated board temperatures, not electrical limitation.
Does BUK9Y65-100E include integrated ESD protection?
Yes - it meets HBM ESD rating of ±2 kV per AEC-Q101 requirements. The device incorporates on-chip protection diodes between gate and source, validated through standardized human-body model testing, eliminating need for external gate protection in most automotive PCB layouts.
Can this MOSFET replace older SO-8 packaged devices without PCB redesign?
Yes - LFPAK56 (SOT669) has identical PCB footprint and solder pad layout to standard Power-SO8, enabling drop-in replacement. However, the mounting base must be connected to drain net (not ground), and thermal relief patterns should be optimized for copper pour attachment to maximize Rth(j-mb) benefit.
BUK9Y65-100E,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 63.3mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1523 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 64W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
BUK9Y65-100E,115 FAQ
1.How can I place an order for BUK9Y65-100E,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUK9Y65-100E,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUK9Y65-100E,115 reliable?
The price and inventory of BUK9Y65-100E,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9Y65-100E,115 is usually 5 days.
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5.How can I obtain technical support or documentation for BUK9Y65-100E,115?
For technical support, including BUK9Y65-100E,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9Y65-100E,115 requirements.
6.How does Aetrix verify that BUK9Y65-100E,115 is sourced from the original manufacturer or authorized distributors?
All BUK9Y65-100E,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y65-100E,115 meets industry standards.
7.What is the process for return or replacement of BUK9Y65-100E,115?
All BUK9Y65-100E,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y65-100E,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9Y65-100E,115 part is unused and in its original packaging.
Return procedure for BUK9Y65-100E,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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