Nexperia USA Inc. BUK9Y7R6-40E,115
- Part No.:
- BUK9Y7R6-40E,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
BUK9Y7R6-40E,115.pdf
- Description:
- MOSFET N-CH 40V 79A LFPAK56
- Quantity:
- Payment:

- Shipping:

Inventory:2,815
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Product details
Overview
BUK9Y7R6-40E from Nexperia is an AEC-Q101-qualified N-channel logic-level MOSFET in LFPAK56 (SOT669) package, designed for automotive 12 V systems. It delivers 7.6 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, supports 79 A continuous drain current at Tmb = 25 °C, and operates up to 175 °C junction temperature - enabling high-reliability motor, lamp, and solenoid control in engine bays and transmission modules.
For engineers reviewing the BUK9Y7R6-40E datasheet, BUK9Y7R6-40E pinout, BUK9Y7R6-40E application, or BUK9Y7R6-40E equivalent, key selection criteria include its true logic-level gate (VGS(th) > 0.5 V at 175 °C), repetitive avalanche rating, 1.58 K/W junction-to-mounting-base thermal resistance, and qualification for thermally demanding automotive environments.
Technical Context
This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with QGD = 5.5 nC and tf = 16.6 ns under standard test conditions (VDS = 30 V, RL = 1.5 Ω, RG(ext) = 5 Ω). Its gate threshold voltage remains functional across -55 °C to 175 °C, with VGS(th) min of 0.5 V at maximum junction temperature.
The device integrates a robust intrinsic body diode (VSD = 0.84–1.2 V at IS = 20 A, Tj = 25 °C) and is rated for non-repetitive avalanche energy EAS = 43 mJ (ID = 79 A, Vsup ≤ 40 V, unclamped), supporting fault-tolerant power switching in safety-critical automotive subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems with load-dump transients. |
| RDS(on) | 7.6 mΩ @ VGS = 5 V, ID = 20 A, Tj = 25 °C - Enables low conduction loss in high-current switching nodes. |
| ID (cont) | 79 A @ Tmb = 25 °C - Supports high-power loads such as starter relays or HVAC blowers without external heatsinking. |
| Tj max | 175 °C - Allows operation in under-hood locations where ambient temperatures exceed 125 °C. |
| Rth(j-mb) | 1.58 K/W - Enables efficient heat transfer to PCB copper or heatsink via exposed mounting base (drain-connected). |
| QGD | 5.5 nC - Low gate-drain charge reduces Miller-induced switching delay and improves hard-switching efficiency. |
| EAS | 43 mJ - Confirmed single-pulse avalanche ruggedness supports inductive load turn-off without external snubbers. |
Pinout & Package
LFPAK56 (SOT669) is a surface-mount plastic package with an exposed copper mounting base electrically connected to the drain terminal. Its compact 4.9 × 3.9 mm footprint and 1.1 mm height enable high-power density layouts while maintaining low thermal resistance to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate (G) | Single gate input with low input capacitance (Ciss typ = 2055 pF) for easy 3.3 V/5 V microcontroller drive. |
| Mounting base | Drain (D) | Exposed copper pad serves as primary drain connection and thermal path - must be soldered to large copper area for optimal Rth(j-mb). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD47. |
| True logic-level gate | VGS(th) ≥ 0.5 V at Tj = 175 °C ensures turn-on with standard 5 V MCU GPIOs even at extreme under-hood temperatures. |
| Repetitive avalanche rated | Rated for repeated inductive switching events without degradation - critical for transmission solenoid drivers. |
| 175 °C junction rating | Enables direct placement near heat sources (e.g., engine control units) without derating or forced cooling. |
| Low RDS(on) × QG figure-of-merit | 7.6 mΩ × 16.4 nC = 124.6 mΩ·nC - balances conduction and switching losses for high-efficiency 12 V DC-DC and motor drives. |
Applications
| Engine Control Module (ECM) Solenoid Drive | Automotive HVAC Blower Motor Control |
|---|---|
|
Use Scenario: Driving fuel injector or transmission shift solenoids in engine control units exposed to under-hood temperatures up to 150 °C ambient. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 12 V inductive loads with fast turn-off to prevent coil saturation and ensure precise timing. Use Value: Repetitive avalanche rating eliminates need for external flyback diodes; 175 °C rating avoids thermal shutdown during sustained high-load operation. |
Use Scenario: PWM-controlled blower motor in passenger cabin HVAC systems requiring variable speed and silent operation. IC Role / Device Role / Timing Role: Low-side switching element delivering up to 79 A peak current with minimal conduction loss and low EMI due to controlled dV/dt. Use Value: 7.6 mΩ RDS(on) reduces power dissipation by >30% vs. legacy 12 mΩ MOSFETs, lowering thermal stress on PCB and improving system efficiency. |
| 12 V Start-Stop System Relay Replacement | Electric Power Steering (EPS) Assist Motor Driver |
|
Use Scenario: Solid-state replacement for mechanical relays in start-stop battery management, handling frequent 12 V cranking pulses. IC Role / Device Role / Timing Role: Bidirectional load switch managing battery-to-starter and battery-to-accessories paths with <100 ns switching transitions. Use Value: QGD = 5.5 nC and tf = 16.6 ns minimize switching losses during rapid on/off cycles, extending service life beyond mechanical relay limits. |
Use Scenario: Half-bridge leg in EPS assist motor driver operating in vibration-prone steering column environments. IC Role / Device Role / Timing Role: High-current, high-reliability switching device with integrated body diode recovery (trr = 17 ns) for regenerative braking energy recirculation. Use Value: 43 mJ EAS withstands motor back-EMF spikes during emergency stop events; AEC-Q101 qualification ensures zero field failures over 15-year vehicle lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 2.2 mΩ RDS(on), 120 A ID, PowerFLAT 5×6 package, no AEC-Q101 certification | Higher current capability but lacks automotive qualification; requires additional reliability validation for OEM use. | Select only for non-automotive industrial motor control where qualification overhead is prohibitive. |
| ON Semiconductor NTMFS4C09NT1G | 40 V, 7.0 mΩ RDS(on), 82 A ID, SO-8FL package, AEC-Q101 qualified, higher Ciss (2600 pF) | Similar performance envelope but larger package footprint and higher gate charge increases MCU drive burden. | Prefer when existing layout accommodates SO-8FL and gate drive strength exceeds 10 mA peak. |
Compared with STL220N4F7AG and NTMFS4C09NT1G, BUK9Y7R6-40E uniquely balances AEC-Q101 compliance, ultra-low thermal resistance (1.58 K/W), and optimized gate charge for 5 V logic drive - making it the most suitable choice for space-constrained, thermally aggressive automotive modules requiring zero qualification risk.
Availability
BUK9Y7R6-40E is available at Aetrix Electronics and suitable for automotive engine control, HVAC actuation, and start-stop system design requiring stable component supply, long-term lifecycle support, and traceable sourcing aligned with IATF 16949 requirements.
Supply support for BUK9Y7R6-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
This device belongs to Nexperia's Automotive Logic-Level MOSFET product line, engineered specifically for replacing electromechanical relays and discrete switches in 12 V automotive power distribution systems with enhanced efficiency, longevity, and thermal resilience.
FAQ
Is BUK9Y7R6-40E pin-compatible with standard SO-8 MOSFETs?
No - BUK9Y7R6-40E uses the LFPAK56 (SOT669) package, which has a different pin layout and thermal pad configuration than standard SO-8. Pin 1–3 are all source, pin 4 is gate, and the mounting base is drain. PCB layout must follow Nexperia's SOT669 footprint, not generic SO-8 land patterns.
What is the maximum recommended gate resistor for 5 V MCU drive?
A 5 Ω external gate resistor is specified in the datasheet for switching characterization (tf, tr). For 5 V GPIOs with ≤20 mA drive capability, a 10 Ω resistor ensures safe peak current (<500 mA) while maintaining acceptable 22.7 ns td(off) and 16.6 ns tf performance.
Does the mounting base require electrical isolation from the PCB ground plane?
No - the mounting base is internally connected to the drain terminal. It must be soldered to a dedicated drain copper pour, electrically isolated from source and gate nets. Thermal vias beneath the pad should connect only to inner-layer drain planes, not to ground or signal layers.
Can BUK9Y7R6-40E replace BUZ70 in existing designs?
Only with layout and thermal redesign - BUZ70 uses TO-220 package with isolated tab, while BUK9Y7R6-40E uses surface-mount LFPAK56 with drain-connected base. Electrical specs differ: BUZ70 has 15 mΩ RDS(on) and 100 °C Tj max, whereas BUK9Y7R6-40E offers 7.6 mΩ and 175 °C rating. Direct substitution requires validation of gate drive, thermal path, and avalanche behavior.
BUK9Y7R6-40E,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 16.4 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2403 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 95W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
BUK9Y7R6-40E,115 FAQ
1.How can I place an order for BUK9Y7R6-40E,115 through Aetrix?
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5.How can I obtain technical support or documentation for BUK9Y7R6-40E,115?
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6.How does Aetrix verify that BUK9Y7R6-40E,115 is sourced from the original manufacturer or authorized distributors?
All BUK9Y7R6-40E,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y7R6-40E,115 meets industry standards.
7.What is the process for return or replacement of BUK9Y7R6-40E,115?
All BUK9Y7R6-40E,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y7R6-40E,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUK9Y7R6-40E,115 part is unused and in its original packaging.
Return procedure for BUK9Y7R6-40E,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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