Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BUK9Y7R6-40E,115

Part No.:
BUK9Y7R6-40E,115
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixBUK9Y7R6-40E,115.pdf
Description:
MOSFET N-CH 40V 79A LFPAK56
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,815

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUK9Y7R6-40E from Nexperia is an AEC-Q101-qualified N-channel logic-level MOSFET in LFPAK56 (SOT669) package, designed for automotive 12 V systems. It delivers 7.6 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, supports 79 A continuous drain current at Tmb = 25 °C, and operates up to 175 °C junction temperature - enabling high-reliability motor, lamp, and solenoid control in engine bays and transmission modules.

For engineers reviewing the BUK9Y7R6-40E datasheet, BUK9Y7R6-40E pinout, BUK9Y7R6-40E application, or BUK9Y7R6-40E equivalent, key selection criteria include its true logic-level gate (VGS(th) > 0.5 V at 175 °C), repetitive avalanche rating, 1.58 K/W junction-to-mounting-base thermal resistance, and qualification for thermally demanding automotive environments.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with QGD = 5.5 nC and tf = 16.6 ns under standard test conditions (VDS = 30 V, RL = 1.5 Ω, RG(ext) = 5 Ω). Its gate threshold voltage remains functional across -55 °C to 175 °C, with VGS(th) min of 0.5 V at maximum junction temperature.

The device integrates a robust intrinsic body diode (VSD = 0.84–1.2 V at IS = 20 A, Tj = 25 °C) and is rated for non-repetitive avalanche energy EAS = 43 mJ (ID = 79 A, Vsup ≤ 40 V, unclamped), supporting fault-tolerant power switching in safety-critical automotive subsystems.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems with load-dump transients.
RDS(on) 7.6 mΩ @ VGS = 5 V, ID = 20 A, Tj = 25 °C - Enables low conduction loss in high-current switching nodes.
ID (cont) 79 A @ Tmb = 25 °C - Supports high-power loads such as starter relays or HVAC blowers without external heatsinking.
Tj max 175 °C - Allows operation in under-hood locations where ambient temperatures exceed 125 °C.
Rth(j-mb) 1.58 K/W - Enables efficient heat transfer to PCB copper or heatsink via exposed mounting base (drain-connected).
QGD 5.5 nC - Low gate-drain charge reduces Miller-induced switching delay and improves hard-switching efficiency.
EAS 43 mJ - Confirmed single-pulse avalanche ruggedness supports inductive load turn-off without external snubbers.

Pinout & Package

LFPAK56 (SOT669) is a surface-mount plastic package with an exposed copper mounting base electrically connected to the drain terminal. Its compact 4.9 × 3.9 mm footprint and 1.1 mm height enable high-power density layouts while maintaining low thermal resistance to PCB copper.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (S) Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt applications.
4 Gate (G) Single gate input with low input capacitance (Ciss typ = 2055 pF) for easy 3.3 V/5 V microcontroller drive.
Mounting base Drain (D) Exposed copper pad serves as primary drain connection and thermal path - must be soldered to large copper area for optimal Rth(j-mb).

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD47.
True logic-level gate VGS(th) ≥ 0.5 V at Tj = 175 °C ensures turn-on with standard 5 V MCU GPIOs even at extreme under-hood temperatures.
Repetitive avalanche rated Rated for repeated inductive switching events without degradation - critical for transmission solenoid drivers.
175 °C junction rating Enables direct placement near heat sources (e.g., engine control units) without derating or forced cooling.
Low RDS(on) × QG figure-of-merit 7.6 mΩ × 16.4 nC = 124.6 mΩ·nC - balances conduction and switching losses for high-efficiency 12 V DC-DC and motor drives.

Applications

Engine Control Module (ECM) Solenoid Drive Automotive HVAC Blower Motor Control

Use Scenario: Driving fuel injector or transmission shift solenoids in engine control units exposed to under-hood temperatures up to 150 °C ambient.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 12 V inductive loads with fast turn-off to prevent coil saturation and ensure precise timing.

Use Value: Repetitive avalanche rating eliminates need for external flyback diodes; 175 °C rating avoids thermal shutdown during sustained high-load operation.

Use Scenario: PWM-controlled blower motor in passenger cabin HVAC systems requiring variable speed and silent operation.

IC Role / Device Role / Timing Role: Low-side switching element delivering up to 79 A peak current with minimal conduction loss and low EMI due to controlled dV/dt.

Use Value: 7.6 mΩ RDS(on) reduces power dissipation by >30% vs. legacy 12 mΩ MOSFETs, lowering thermal stress on PCB and improving system efficiency.

12 V Start-Stop System Relay Replacement Electric Power Steering (EPS) Assist Motor Driver

Use Scenario: Solid-state replacement for mechanical relays in start-stop battery management, handling frequent 12 V cranking pulses.

IC Role / Device Role / Timing Role: Bidirectional load switch managing battery-to-starter and battery-to-accessories paths with <100 ns switching transitions.

Use Value: QGD = 5.5 nC and tf = 16.6 ns minimize switching losses during rapid on/off cycles, extending service life beyond mechanical relay limits.

Use Scenario: Half-bridge leg in EPS assist motor driver operating in vibration-prone steering column environments.

IC Role / Device Role / Timing Role: High-current, high-reliability switching device with integrated body diode recovery (trr = 17 ns) for regenerative braking energy recirculation.

Use Value: 43 mJ EAS withstands motor back-EMF spikes during emergency stop events; AEC-Q101 qualification ensures zero field failures over 15-year vehicle lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V, 2.2 mΩ RDS(on), 120 A ID, PowerFLAT 5×6 package, no AEC-Q101 certification Higher current capability but lacks automotive qualification; requires additional reliability validation for OEM use. Select only for non-automotive industrial motor control where qualification overhead is prohibitive.
ON Semiconductor NTMFS4C09NT1G 40 V, 7.0 mΩ RDS(on), 82 A ID, SO-8FL package, AEC-Q101 qualified, higher Ciss (2600 pF) Similar performance envelope but larger package footprint and higher gate charge increases MCU drive burden. Prefer when existing layout accommodates SO-8FL and gate drive strength exceeds 10 mA peak.

Compared with STL220N4F7AG and NTMFS4C09NT1G, BUK9Y7R6-40E uniquely balances AEC-Q101 compliance, ultra-low thermal resistance (1.58 K/W), and optimized gate charge for 5 V logic drive - making it the most suitable choice for space-constrained, thermally aggressive automotive modules requiring zero qualification risk.

Availability

BUK9Y7R6-40E is available at Aetrix Electronics and suitable for automotive engine control, HVAC actuation, and start-stop system design requiring stable component supply, long-term lifecycle support, and traceable sourcing aligned with IATF 16949 requirements.

Supply support for BUK9Y7R6-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

This device belongs to Nexperia's Automotive Logic-Level MOSFET product line, engineered specifically for replacing electromechanical relays and discrete switches in 12 V automotive power distribution systems with enhanced efficiency, longevity, and thermal resilience.

FAQ

Is BUK9Y7R6-40E pin-compatible with standard SO-8 MOSFETs?

No - BUK9Y7R6-40E uses the LFPAK56 (SOT669) package, which has a different pin layout and thermal pad configuration than standard SO-8. Pin 1–3 are all source, pin 4 is gate, and the mounting base is drain. PCB layout must follow Nexperia's SOT669 footprint, not generic SO-8 land patterns.

What is the maximum recommended gate resistor for 5 V MCU drive?

A 5 Ω external gate resistor is specified in the datasheet for switching characterization (tf, tr). For 5 V GPIOs with ≤20 mA drive capability, a 10 Ω resistor ensures safe peak current (<500 mA) while maintaining acceptable 22.7 ns td(off) and 16.6 ns tf performance.

Does the mounting base require electrical isolation from the PCB ground plane?

No - the mounting base is internally connected to the drain terminal. It must be soldered to a dedicated drain copper pour, electrically isolated from source and gate nets. Thermal vias beneath the pad should connect only to inner-layer drain planes, not to ground or signal layers.

Can BUK9Y7R6-40E replace BUZ70 in existing designs?

Only with layout and thermal redesign - BUZ70 uses TO-220 package with isolated tab, while BUK9Y7R6-40E uses surface-mount LFPAK56 with drain-connected base. Electrical specs differ: BUZ70 has 15 mΩ RDS(on) and 100 °C Tj max, whereas BUK9Y7R6-40E offers 7.6 mΩ and 175 °C rating. Direct substitution requires validation of gate drive, thermal path, and avalanche behavior.

BUK9Y7R6-40E,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
79A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
16.4 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
2403 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
95W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

BUK9Y7R6-40E,115 FAQ

1.How can I place an order for BUK9Y7R6-40E,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUK9Y7R6-40E,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUK9Y7R6-40E,115 reliable?

The price and inventory of BUK9Y7R6-40E,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUK9Y7R6-40E,115 is usually 5 days.

3.What payment methods are accepted for BUK9Y7R6-40E,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUK9Y7R6-40E,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUK9Y7R6-40E,115?

BUK9Y7R6-40E,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUK9Y7R6-40E,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUK9Y7R6-40E,115?

For technical support, including BUK9Y7R6-40E,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUK9Y7R6-40E,115 requirements.

6.How does Aetrix verify that BUK9Y7R6-40E,115 is sourced from the original manufacturer or authorized distributors?

All BUK9Y7R6-40E,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUK9Y7R6-40E,115 meets industry standards.

7.What is the process for return or replacement of BUK9Y7R6-40E,115?

All BUK9Y7R6-40E,115 units undergo pre-shipment inspection (PSI). If there is an issue with BUK9Y7R6-40E,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUK9Y7R6-40E,115 part is unused and in its original packaging.

Return procedure for BUK9Y7R6-40E,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUK9Y7R6-40E,115 Tags

  • BUK9Y7R6-40E,115
  • BUK9Y7R6-40E,115 PDF
  • BUK9Y7R6-40E,115 Datasheet
  • BUK9Y7R6-40E,115 Specifications
  • BUK9Y7R6-40E,115 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BUK9Y7R6-40E,115
  • Buy BUK9Y7R6-40E,115
  • BUK9Y7R6-40E,115 Price
  • BUK9Y7R6-40E,115 Distributor
  • BUK9Y7R6-40E,115 Supplier
  • BUK9Y7R6-40E,115 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER