Nexperia USA Inc. BUK9Y8R5-80EX

Overview

BUK9Y8R5-80EX from Nexperia is an AEC-Q101 qualified N-channel logic-level MOSFET in LFPAK56 (SOT669) package, designed for high-reliability automotive power switching. It delivers 80 V V_DS, 8.5 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, 100 A continuous drain current at T_mb = 25 °C, and operates up to 175 °C junction temperature - enabling use in 12 V/24 V/48 V transmission control and solenoid drivers.

For engineers reviewing the BUK9Y8R5-80EX datasheet, BUK9Y8R5-80EX pinout, BUK9Y8R5-80EX application, or BUK9Y8R5-80EX equivalent, key selection criteria include its true logic-level gate (V_GS(th) > 0.5 V at 175 °C), repetitive avalanche rating, 0.63 K/W R_th(j-mb), and LFPAK56 thermal performance under thermally demanding automotive conditions.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with Q_GD = 17.1 nC and t_f = 45 ns at V_DS = 60 V, RG(ext) = 5 Ω. Its gate threshold remains functional across -55 °C to 175 °C, with V_GS(th) min = 0.5 V at T_j = 175 °C, ensuring robust turn-on in high-temperature engine bay environments.

The device integrates a source-drain diode with V_SD = 0.82–1.2 V at I_S = 25 A and T_j = 25 °C, and supports unclamped single-pulse avalanche energy E_AS = 148 mJ at I_D = 100 A - critical for inductive load switching in motor and lamp control circuits.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a 4-lead surface-mount plastic package with exposed mounting base connected to drain, optimized for high-power density and thermal performance in automotive PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6F7 and IRF100P217, BUK9Y8R5-80EX uniquely balances 80 V rating, AEC-Q101 compliance, 5 V logic-level drive, and LFPAK56 thermal efficiency - making it optimal for space-constrained, high-temperature automotive power stages where both reliability and compactness are mandatory.

Availability

BUK9Y8R5-80EX is available at Aetrix Electronics and suitable for automotive transmission control, engine cooling fan drivers, and start-stop solenoid actuation requiring stable component supply across extended production lifecycles.

Supply support for BUK9Y8R5-80EX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This device belongs to Nexperia's Automotive Logic Level MOSFET product line, engineered specifically for thermally aggressive, safety-critical vehicle subsystems where consistent 5 V gate drive and AEC-Q101 reliability are non-negotiable.

FAQ

Is BUK9Y8R5-80EX pin-compatible with other LFPAK56 MOSFETs?

Yes - BUK9Y8R5-80EX uses the standard SOT669 footprint with pins 1–3 as source, pin 4 as gate, and mounting base as drain. It shares identical land pattern and solder mask requirements with all Nexperia LFPAK56 logic-level MOSFETs, enabling drop-in replacement within the same voltage and R_DS(on) class.

What is the maximum safe operating temperature for PCB layout?

The mounting base (drain) must be soldered to ≥200 mm² of 2 oz copper with thermal vias to internal ground planes. At 100 A continuous current and T_mb = 100 °C, junction temperature stays below 175 °C when R_th(m-b) ≤ 0.3 K/W - achievable with 6–8 thermal vias (0.3 mm diameter) under the pad.

Does this MOSFET require a gate resistor for automotive PWM applications?

A 5–10 Ω series gate resistor is recommended to damp ringing and limit peak gate current during 5 V MCU-driven 1–20 kHz PWM. This value balances switching speed (t_f ≈ 45 ns) and EMI suppression, especially when driving inductive loads like solenoids with di/dt > 100 A/µs.

Can BUK9Y8R5-80EX replace older TO-263 MOSFETs in existing designs?

Yes - its LFPAK56 package offers lower R_th(j-mb) (0.63 K/W vs. ~1.0 K/W for TO-263) and smaller footprint. Layout adaptation requires updating the drain pad to match SOT669 dimensions (6.2 × 4.4 mm) and verifying gate drive strength, as lower Q_G reduces driver loading versus legacy parts.