Nexperia USA Inc. BUK9Y8R7-60E,115

Overview

BUK9Y8R7-60E from Nexperia is an AEC-Q101-qualified N-channel logic-level MOSFET in LFPAK56 (SOT669) package, designed for 12 V automotive power switching. It delivers 60 V V_DS, 8.7 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, 86 A continuous drain current at T_mb = 25 °C, and operates up to 175 °C junction temperature-enabling robust motor, lamp, and solenoid control in engine bays and transmission modules.

For engineers reviewing the BUK9Y8R7-60E datasheet, BUK9Y8R7-60E pinout, BUK9Y8R7-60E application, or BUK9Y8R7-60E equivalent, key selection criteria include its true logic-level gate (V_GS(th) > 0.5 V at 175 °C), repetitive avalanche rating, 1.02 K/W R_th(j-mb), and LFPAK56 thermal performance in space-constrained automotive PCBs.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-resistance and fast switching with Q_GD = 9.7 nC and t_f = 26 ns under standard test conditions (V_DS = 45 V, R_G(ext) = 5 Ω). Its gate threshold remains functional across -55 °C to 175 °C, with V_GS(th) ranging from 1.4 V (min) at 25 °C to 0.5 V (min) at 175 °C.

The device integrates a source-drain diode with V_SD = 0.82 V (typ) at I_S = 20 A and T_j = 25 °C, and supports unclamped single-pulse avalanche energy of 76.5 mJ. Thermal design leverages direct mounting base (drain-connected) conduction with R_th(j-mb) = 1.02 K/W for high-power density layouts.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a thermally enhanced surface-mount package with exposed mounting base connected to drain. Its compact 4.4 × 3.6 mm footprint and 1.0 mm profile support high-density automotive PCB layouts while enabling efficient heat transfer via the drain-connected metal base.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6F7 and IRF1010NSPBF, BUK9Y8R7-60E uniquely combines AEC-Q101 compliance, true 5 V logic-level operation, and LFPAK56 thermal performance-making it optimal for space- and reliability-constrained automotive modules where gate drive simplicity and under-hood survivability are mandatory.

Availability

BUK9Y8R7-60E is available at Aetrix Electronics and suitable for automotive power distribution, transmission control units, and engine management systems requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for BUK9Y8R7-60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors-high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

The LFPAK MOSFET product line targets automotive power switching applications demanding AEC-Q101 qualification, superior thermal performance, and logic-level gate compatibility with modern microcontrollers.

FAQ

Is BUK9Y8R7-60E suitable for high-frequency PWM motor control?

Yes. With t_f = 26 ns, t_r = 30 ns, and Q_GD = 9.7 nC, it supports clean switching up to 100 kHz in brushed DC motor drives. Its low C_oss (295–355 pF) and Crss (150–205 pF) minimize ringing and EMI in high-dV/dt environments typical of automotive PWM systems.

What is the recommended PCB layout for thermal performance?

Use ≥200 mm² of 2 oz copper connected directly to the mounting base (drain) with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to internal ground/power planes. Keep source traces wide and short to minimize loop inductance; avoid routing sensitive analog traces beneath the LFPAK56 footprint.

Does BUK9Y8R7-60E require a gate resistor for automotive 12 V systems?

A series gate resistor (5–10 Ω) is recommended to dampen gate oscillation and limit peak gate current during fast MCU edge transitions. This prevents unintended turn-on due to parasitic inductance and ensures controlled dV/dt during switching-critical for EMC compliance in vehicle networks.

Can this MOSFET replace mechanical relays in start-stop systems?

Yes. Its 346 A pulsed drain current (I_DM) and 76.5 mJ avalanche energy handle starter motor inrush and back-EMF without failure. Combined with AEC-Q101 qualification and 175 °C operation, it enables solid-state relay designs that eliminate contact wear, bounce, and coil power consumption.