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Texas Instruments CSD13302WT
- Part No.:
- CSD13302WT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 4-UFBGA, DSBGA
- Datasheet:
-
CSD13302WT.pdf
- Description:
- MOSFET N-CH 12V 1.6A 4DSBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,237
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Product details
Overview
CSD13302WT from Texas Instruments is a 12 V, 1.6 A N-channel NexFET™ power MOSFET in a 1 mm × 1 mm DSBGA package, featuring 14.6 mΩ RDS(on) at VGS = 4.5 V, 6.0 nC total gate charge, and ultra-low 0.62 mm profile-designed for space-constrained battery protection and load switching in portable electronics.
For engineers reviewing the CSD13302WT datasheet, CSD13302WT pinout, CSD13302WT application, or CSD13302WT equivalent, key selection criteria include its 12 V drain-source rating, thermal performance on minimal Cu (275°C/W), gate threshold of 1.0 V (typ), and compatibility with 1.8 V–4.5 V logic-level drive in high-density PCB layouts.
Technical Context
This device employs a silicon-based planar trench MOSFET structure optimized for low RDS(on) and fast switching in battery-side power path control. Its gate charge profile (Qg = 6.0 nC, Qgd = 2.1 nC) supports efficient PWM operation at frequencies up to several MHz under light-load conditions.
The DSBGA-4 package uses solder-ball interconnects with defined pinout (A1=Gate, A2=Source, B1/B2=Drain) and achieves 70°C/W junction-to-ambient thermal resistance when mounted on 1 inch² of 2 oz. copper-enabling 1.8 W continuous power dissipation at TA = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - maximum drain-to-source blocking voltage for use in ≤12 V battery systems |
| RDS(on) @ VGS = 4.5 V | 14.6 mΩ - enables <16 mV conduction drop at 1.1 A, minimizing I²R loss in load switches |
| Qg | 6.0 nC - reduces gate driver power demand and switching transition time in DC/DC and protection circuits |
| VGS(th) | 1.0 V (typ) - ensures turn-on with standard 1.8 V GPIO or low-voltage microcontroller outputs |
| ID (continuous) | 1.6 A - rated for sustained current in single-cell Li-ion battery management paths |
| Package | DSBGA-4 (1.0 mm × 1.0 mm, 0.62 mm height) - fits beneath thin-profile connectors and in 0402-footprint adjacent routing zones |
Pinout & Package
Package: DSBGA-4 (YZB), wafer-level chip-scale package with four solder balls; 1.0 mm × 1.0 mm body, 0.62 mm max height, 0.31 mm ball diameter, 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | Gate | Control terminal; requires <6.0 nC charge for full enhancement; compatible with 1.8 V logic |
| A2 | Source | Power return node; internally tied to substrate; must be routed with low-inductance path to ground plane |
| B1, B2 | Drain | Parallel-connected drain terminals; share current path to battery/load; require symmetric trace layout |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 14.6 mΩ at 4.5 V drive enables <20 mW conduction loss at 1.2 A, critical for thermal budget in sealed enclosures |
| Low Qg and Qgd | 6.0 nC total / 2.1 nC Miller charge minimizes switching energy and dv/dt-induced shoot-through risk in half-bridge configurations |
| 1 mm × 1 mm DSBGA footprint | Reduces board area by >70% vs. SOT-23; eliminates need for thermal pads or vias in space-limited wearables |
| 0.62 mm profile | Enables stacking under displays or batteries in ultra-thin devices (e.g., TWS earbuds, smart patches) |
Applications
| Battery Protection Circuit | Load Switch for PMIC Output |
|---|---|
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion packs for Bluetooth headsets. IC Role / Device Role: Primary high-side switch disconnecting battery from charging IC and system load upon fault detection. Use Value: 12 V rating and 1.6 A continuous current support direct integration into 4.2 V nominal battery rails without derating. | Use Scenario: Controlled power-up sequencing of RF transceiver modules in IoT sensors. IC Role / Device Role: Low-dropout, logic-controlled power gate between PMIC LDO output and downstream analog circuitry. Use Value: 1.0 V threshold and 14.6 mΩ RDS(on) ensure clean enable timing and <17 mV dropout at 1.15 A, preserving signal integrity. |
| USB-C Port Power Path | Smartwatch Charging Management |
Use Scenario: Reverse-current blocking and VBUS switching in compact USB-C receptacles. IC Role / Device Role: Bidirectional load switch managing power flow between source and sink during role swap. Use Value: DSBGA-4 size allows placement within 1.5 mm of connector edge; 12 V rating covers USB PD 3.0 9 V/15 V negotiation margins. | Use Scenario: Isolating wireless charging receiver coil from main battery during active charging cycles. IC Role / Device Role: High-efficiency isolation switch decoupling charging path from system load to prevent cross-regulation. Use Value: 6.0 nC Qg enables <500 ns turn-off, eliminating leakage-induced battery drain during sleep mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H015LPS-13 | RDS(on) = 15 mΩ @ 4.5 V; SOT-723 package (1.25 mm × 1.25 mm); higher 0.95 mm height | Requires larger PCB area and thicker stack-up; less suitable for sub-0.7 mm Z-height designs | Choose when legacy SMT process compatibility outweighs size constraints |
| AO3400 | RDS(on) = 28 mΩ @ 4.5 V; SOT-23-3 package; 3.0 V VGS(th) minimum | Needs ≥3.0 V gate drive; higher conduction loss limits use to ≤0.8 A continuous loads | Prefer for cost-sensitive, non-size-critical 3.3 V GPIO-driven applications |
Compared with DMN10H015LPS-13 and AO3400, the CSD13302WT delivers superior size efficiency and lower gate drive voltage compatibility-making it optimal for next-generation wearable and hearable devices where Z-height and logic-level drive are design-critical.
Availability
CSD13302WT is available at Aetrix Electronics and suitable for battery protection, load switching, USB-C power path management, and smart wearable charging applications requiring stable component supply across high-mix, low-volume production runs.
Supply support for CSD13302WT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a U.S.-based semiconductor company specializing in analog, embedded processing, and power management technologies with over 90 years of innovation history.
The CSD13302WT belongs to TI's NexFET™ power MOSFET product line-engineered specifically for ultra-compact, high-efficiency power switching in portable and battery-powered systems.
FAQ
What is the maximum continuous drain current rating for the CSD13302WT at 105°C case temperature?
The CSD13302WT is rated for 1.6 A continuous drain current at TA = 25°C. At TC = 105°C, derating applies per thermal resistance; with RθJA = 275°C/W on minimal Cu, the practical continuous ID drops to approximately 0.9 A to maintain TJ ≤ 150°C. Always verify using actual board layout and ambient conditions in the final design.
Does the CSD13302WT support 1.8 V logic-level gate drive?
Yes, the CSD13302WT has a typical VGS(th) of 1.0 V and guaranteed turn-on at VGS ≥ 1.8 V, making it fully compatible with 1.8 V GPIOs. Its RDS(on) remains 21.2 mΩ at VGS = 2.5 V-sufficient for low-duty-cycle or pulsed load switching in CSD13302WT-based designs.
What is the moisture sensitivity level (MSL) and peak reflow temperature for the CSD13302WT?
The CSD13302WT carries an MSL rating of Level-1 with unlimited floor life and a peak reflow temperature of 260°C, per JEDEC J-STD-020. This allows standard lead-free reflow profiles without baking requirements-critical for high-yield assembly of CSD13302WT in automated SMT lines.
How does the DSBGA-4 package of the CSD13302WT affect PCB layout and thermal performance?
The DSBGA-4 package of the CSD13302WT requires precise solder mask-defined pads and stencil aperture control due to its 0.5 mm pitch and 0.31 mm solder balls. Thermal performance depends heavily on copper area: RθJA improves from 275°C/W (minimum Cu) to 70°C/W with 1 inch² of 2 oz. copper-so CSD13302WT layouts must allocate dedicated thermal land patterns per TI's M0153-01 recommendation.
Can the CSD13302WT be used in reverse-biased (source-to-drain) conduction mode?
The CSD13302WT integrates an intrinsic body diode with VSD = 0.7 V (typ) at 1 A, enabling limited reverse conduction. However, its RDS(on) is not characterized in reverse mode, and SOA limits apply. For bidirectional power flow, use CSD13302WT only in forward-biased configurations unless explicitly validated per TI's application notes for synchronous rectification.
CSD13302WT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 4-UFBGA, DSBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 17.1mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.8 nC @ 4.5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 862 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DSBGA (1x1)
CSD13302WT FAQ
1.How can I place an order for CSD13302WT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD13302WT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD13302WT reliable?
The price and inventory of CSD13302WT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD13302WT is usually 5 days.
3.What payment methods are accepted for CSD13302WT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD13302WT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD13302WT?
CSD13302WT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD13302WT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD13302WT?
For technical support, including CSD13302WT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD13302WT requirements.
6.How does Aetrix verify that CSD13302WT is sourced from the original manufacturer or authorized distributors?
All CSD13302WT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD13302WT meets industry standards.
7.What is the process for return or replacement of CSD13302WT?
All CSD13302WT units undergo pre-shipment inspection (PSI). If there is an issue with CSD13302WT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD13302WT part is unused and in its original packaging.
Return procedure for CSD13302WT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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