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Texas Instruments CSD13306WT
- Part No.:
- CSD13306WT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 6-UFBGA, DSBGA
- Datasheet:
-
CSD13306WT.pdf
- Description:
- MOSFET N-CH 12V 3.5A 6DSBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,255
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Product details
Overview
CSD13306WT from Texas Instruments is a 12 V, N-channel NexFET™ power MOSFET in a 6-pin DSBGA (YZC) package with 8.8 mΩ RDS(on) at VGS = 4.5 V, 8.6 nC total gate charge, and 3.5 A continuous drain current - optimized for high-efficiency load switching in space-constrained battery management systems.
For engineers reviewing the CSD13306WT datasheet, CSD13306WT pinout, CSD13306WT application, or CSD13306WT equivalent, key selection criteria include its ultra-low on-resistance at low gate drive, thermal performance on minimal copper, gate charge profile for fast switching, and DSBGA footprint compatibility with fine-pitch PCB layouts.
Technical Context
This device employs a trench-gate silicon process to achieve sub-10 mΩ on-resistance at 4.5 V gate drive while maintaining low Qgd (3.0 nC) and Qgs (1.1 nC), enabling efficient hard-switching in DC-DC and load-switch topologies. Its 1.0 × 1.5 mm DSBGA package features bottom-side source and drain terminals for optimal thermal path to PCB copper.
The CSD13306WT operates across –55°C to 150°C junction temperature, with VGS(th) tightly specified at 0.7–1.3 V and RDS(on) exhibiting <1.4× variation from –55°C to 125°C. It integrates an intrinsic body diode with 0.7–1.0 V forward voltage at 1.5 A and 14.8 nC reverse recovery charge.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - supports single-cell Li-ion and 5–12 V rail applications without derating |
| RDS(on) @ 4.5 V | 8.8 mΩ typical - enables ≤30 mW conduction loss at 1.5 A, critical for portable thermal budget |
| Qg | 8.6 nC - allows fast turn-on with low gate driver current demand (e.g., ~1.7 mA avg for 5 µs rise) |
| ID Continuous | 3.5 A @ TA = 25°C - rated for sustained load switching in compact battery packs |
| Package | DSBGA-6 (YZC), 1.0 × 1.5 mm - compatible with 0.4 mm pitch PCB assembly and ultra-thin (<0.62 mm) end equipment |
| VGS(th) | 1.0 V typical - ensures reliable turn-on with 1.8 V or 2.5 V logic-level controllers |
| PD | 1.9 W - achievable with ≥1 in² 2 oz. Cu pad; 230°C/W RθJA on minimal FR4 |
Pinout & Package
Package: DSBGA-6 (YZC), 1.0 mm × 1.5 mm, 0.62 mm height, ball pitch 0.4 mm, solder-ball termination (SNAGCU), MSL Level-1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1, B1, C1 | Drain | Main power path terminal; connected to high-side or low-side switch node; requires thermal via array under pad |
| A2 | Gate | Control input; sensitive to ESD; requires short trace and local decoupling to minimize ringing |
| B2, C2 | Source | Power return path; ties directly to PCB ground plane; serves as reference for gate drive and thermal sink |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 8.8 mΩ @ 4.5 V enables >98% efficiency in 1.5 A load switches at 5 V input |
| Low Qg/Qgd ratio | Qgd/Qg = 35% reduces Miller-induced switching delay and improves dv/dt immunity |
| Small 1.0 × 1.5 mm DSBGA | Reduces board area by >50% vs. comparable SO-8 or SON packages, critical for wearables and hearing aids |
| Low-profile 0.62 mm height | Enables stacking under displays or batteries in slim consumer electronics enclosures |
| Halogen-free & RoHS | Complies with IPC-1752A material declaration requirements for global OEM compliance |
Applications
| Battery Protection IC Interface | USB-C Load Switch |
|---|---|
Use Scenario: Integrated into secondary protection circuits downstream of fuel gauges to disconnect cell during overvoltage or short-circuit events. IC Role / Device Role / Timing Role: Low-side switch controlled by protection ASIC; must respond within <100 µs and sustain 3 A fault current. Use Value: 8.8 mΩ RDS(on) limits voltage drop to <26 mV at 3 A, preserving accurate cell voltage sensing during normal operation. | Use Scenario: Enables/disables VBUS power delivery in portable accessories with strict 5 mm × 5 mm PCB area budget. IC Role / Device Role / Timing Role: High-side load switch driven by 3.3 V GPIO; requires fast turn-on and minimal quiescent current. Use Value: 1.0 V VGS(th) ensures full enhancement with 1.8 V logic; 8.6 nC Qg supports <10 µs switching with standard buffer drivers. |
| Wireless Earbud Charging Case | Medical Patch Sensor Power Path |
Use Scenario: Controls charging current flow from USB input to Li-ion battery bank in compact, thermally isolated enclosure. IC Role / Device Role / Timing Role: Low-side switch in linear charger path; must dissipate <100 mW at 1.5 A and remain below 60°C ambient. Use Value: 0.62 mm height and DSBGA thermal design allow direct mounting to 1 oz. Cu thermal pad, achieving <45°C junction rise at 1.5 A. | Use Scenario: Isolates sensor analog front-end from main MCU rail during sleep mode to extend 7-day battery life. IC Role / Device Role / Timing Role: Normally-off high-side switch; activated only during measurement bursts; requires <1 µA IDSS leakage. Use Value: 1 µA max IDSS at 9.6 V ensures <10 nA leakage per switch in multi-rail designs, preserving µA-level sleep current budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H015LPS-13 | RDS(on) = 10.5 mΩ @ 4.5 V; larger 2 × 2 mm PSOF package; higher Qg = 12.5 nC | Less suitable for <1.5 mm thickness constraints; better thermal dissipation on 2-layer boards | Choose when board area >4 mm² is available and thermal margin >2 W is required |
| Si2302DDS-T1-GE3 | RDS(on) = 48 mΩ @ 4.5 V; SOT-23-3 package; lower cost but 5.5× higher conduction loss | Acceptable only for <500 mA loads; incompatible with 1.5 A battery protection use cases | Choose only for cost-sensitive, low-current (<0.3 A) indicator or LED switching |
Compared with DMN10H015LPS-13 and Si2302DDS-T1-GE3, the CSD13306WT delivers the lowest RDS(on) in the smallest footprint, making it uniquely suited for high-current, space-limited load switching where thermal resistance and gate drive efficiency are critical.
Availability
CSD13306WT is available at Aetrix Electronics and suitable for battery protection, USB-C load switching, and medical patch sensor power path applications requiring stable component supply and long-term lifecycle support.
Supply support for CSD13306WT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a U.S.-based semiconductor company specializing in analog, embedded processing, and power management technologies, serving industrial, automotive, and personal electronics markets.
The CSD13306WT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in ultra-compact portable and wearable devices.
FAQ
What is the maximum continuous drain current rating for the CSD13306WT at 105°C ambient?
The CSD13306WT is rated for 3.5 A continuous drain current at TA = 25°C with sufficient copper area. At 105°C ambient, derating applies: using the typical RθJA of 65°C/W (with 1 in² 2 oz. Cu), the maximum sustainable ID drops to approximately 1.8 A to maintain TJ ≤ 150°C. Always verify thermal layout with actual board stack-up and airflow conditions before finalizing the CSD13306WT design.
Does the CSD13306WT have integrated ESD protection, and what handling precautions apply?
The CSD13306WT has limited built-in ESD protection per TI's documentation. It is not rated to HBM Class 2 or above. During handling and assembly, leads must be shorted together or the device placed in conductive foam to prevent electrostatic damage to the gate oxide. Avoid touching exposed balls; use ionized air and grounded workstations. These precautions are mandatory to ensure reliability of every CSD13306WT unit in production.
Can the CSD13306WT be used as a high-side switch with 3.3 V GPIO control?
Yes - the CSD13306WT has a typical VGS(th) of 1.0 V and guaranteed turn-on at VGS = 2.5 V, making it fully compatible with 3.3 V GPIO. For high-side configuration, a level-shifted gate drive is required since the source floats at VIN; TI recommends pairing the CSD13306WT with a dedicated high-side driver like the TPS229xx series. The CSD13306WT's low Qg minimizes driver power consumption in such implementations.
What is the recommended land pattern and solder mask opening for the CSD13306WT DSBGA package?
TI specifies a land pattern with 0.35 mm diameter solder pads on 0.4 mm pitch, with non-solder-mask-defined (NSMD) openings to ensure reliable solder joint formation and thermal transfer. The pattern must include thermal vias under the drain and source pads, filled or capped per IPC-7093 guidelines. Full mechanical details, including solder paste stencil recommendations, are provided in SLPS537 Section 7.1 - always use the official CSD13306WT land pattern to avoid tombstoning or voiding during reflow of the CSD13306WT.
How does the CSD13306WT's RDS(on) change over temperature, and why does that matter in battery protection?
The CSD13306WT's RDS(on) increases by ~40% from 25°C to 125°C (per Figure D008), reaching ~12.3 mΩ. In battery protection, this rise affects overcurrent trip accuracy: a 3 A fault may produce only 37 mV drop at room temperature but 49 mV at elevated temperature. System designers must calibrate sense resistors or use temperature-compensated protection ICs to maintain consistent trip points across the full –40°C to +85°C operating range of the CSD13306WT.
CSD13306WT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 6-UFBGA, DSBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 10.2mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.2 nC @ 4.5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1370 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-DSBGA (1x1.5)
CSD13306WT FAQ
1.How can I place an order for CSD13306WT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD13306WT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD13306WT reliable?
The price and inventory of CSD13306WT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD13306WT is usually 5 days.
3.What payment methods are accepted for CSD13306WT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD13306WT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD13306WT?
CSD13306WT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD13306WT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD13306WT?
For technical support, including CSD13306WT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD13306WT requirements.
6.How does Aetrix verify that CSD13306WT is sourced from the original manufacturer or authorized distributors?
All CSD13306WT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD13306WT meets industry standards.
7.What is the process for return or replacement of CSD13306WT?
All CSD13306WT units undergo pre-shipment inspection (PSI). If there is an issue with CSD13306WT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD13306WT part is unused and in its original packaging.
Return procedure for CSD13306WT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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