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Texas Instruments CSD13381F4T
- Part No.:
- CSD13381F4T
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
CSD13381F4T.pdf
- Description:
- MOSFET N-CH 12V 2.1A 3PICOSTAR
- Quantity:
- Payment:
- Shipping:
Inventory:2,084
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Product details
Overview
CSD13381F4T from Texas Instruments is a 12-V N-channel FemtoFET™ MOSFET in a 0402 (1.0 mm × 0.6 mm) surface-mount package, featuring 140 mΩ RDS(on) at VGS = 4.5 V, 1060 pC total gate charge, and integrated ESD protection rated >4-kV HBM. It serves as an ultra-compact load switch in space-constrained mobile power rails.
For engineers reviewing the CSD13381F4T datasheet, CSD13381F4T pinout, CSD13381F4T application, or CSD13381F4T equivalent, this page delivers verified electrical specs, thermal behavior, PCB layout guidance, and real-world switching use cases for battery-powered handheld systems.
Technical Context
This device uses silicon-based N-channel enhancement-mode MOSFET technology with a low-threshold voltage (0.85 V typ.) enabling direct drive from 1.8-V logic. Its ultra-low profile (0.36-mm max height) and minimal parasitic capacitance (Ciss = 200 pF typ., Crss = 3.3 pF) support fast switching in high-frequency DC-DC converter synchronous rectification and load switching.
The integrated body diode exhibits 0.73-V forward voltage at 0.5 A and 6-ns reverse recovery time, while avalanche energy rating of 2.7 mJ supports unclamped inductive turn-off robustness. Thermal resistance is 90°C/W on 1-in² copper, enabling 2.1-A continuous drain current at 25°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - Maximum drain-to-source blocking voltage; suitable for single-cell Li-ion (≤4.2 V) and 5-V rail switching without derating. |
| RDS(on) | 140 mΩ @ VGS = 4.5 V - Enables <100-mW conduction loss at 0.8 A, critical for thermally limited mobile PCBs. |
| Qg | 1060 pC - Low gate charge reduces driver power demand and enables efficient 1–3 MHz switching in compact DC-DC stages. |
| VGS(th) | 0.85 V typ. - Ensures reliable turn-on with 1.8-V GPIO, eliminating level-shifter need in low-voltage microcontroller interfaces. |
| ESD Rating | >4-kV HBM - Integrated protection eliminates external ESD diodes in handheld front-end switches, saving board area. |
| Package Size | 1.0 mm × 0.6 mm × 0.36 mm - Smallest standard SMD MOSFET footprint available; replaces larger 0603/0805 devices with ≥60% area reduction. |
| PD | 500 mW - Power dissipation limit defined at 25°C ambient on 1-in² Cu; sets practical current ceiling under natural convection. |
Pinout & Package
PICOSTAR (YJC) 3-pin ultra-miniature package: 1.0 mm × 0.6 mm footprint, 0.36-mm maximum height, leadless SMD construction with exposed thermal pad not present (no thermal pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0.65–4.5 V logic-level drive; low Qgd (140 pC) minimizes Miller-induced shoot-through risk. |
| 2 (S) | Source | Reference node for gate drive and current return path; tied to system ground or low-side switch common point. |
| 3 (D) | Drain | High-side or low-side power path terminal; connects to battery, rail, or load; handles up to 2.1-A continuous current. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small 0402 footprint | 1.0 mm × 0.6 mm area enables placement in tight spaces between ICs or beneath connectors in smartphones and wearables. |
| Low Qg and Qgd | 1060 pC total / 140 pC gate-to-drain charge reduces switching losses and improves efficiency in 1–2 MHz DC-DC converters. |
| Integrated ESD protection | >4-kV HBM rating eliminates need for discrete TVS diodes in USB, SIM, or SD card power switches, cutting BOM count. |
| Low threshold voltage | 0.85 V typical VGS(th) ensures full enhancement with 1.8-V I/O, supporting direct interface to modern ultra-low-voltage MCUs. |
| Lead- and halogen-free | RoHS-compliant construction meets global environmental regulations for consumer electronics and medical portable devices. |
Applications
| Smartphone Power Management | Wireless Earbud Battery Protection |
|---|---|
|
Use Scenario: Isolating backup battery from main PMIC during firmware updates or fault conditions. IC Role / Device Role / Timing Role: Low-side load switch controlling power domain enable/disable with <100-ns response to MCU GPIO. Use Value: 140 mΩ RDS(on) limits voltage drop to <0.1 V at 700 mA, preserving battery runtime and enabling precise current monitoring. |
Use Scenario: Enabling/disabling charging circuitry in true wireless stereo (TWS) earbuds to prevent overcharge and leakage. IC Role / Device Role / Timing Role: High-side switch isolating Li-ion cell from charger IC during sleep mode or thermal shutdown. Use Value: 0.85-V VGS(th) allows direct control from 1.8-V Bluetooth SoC GPIO, eliminating level-shifters and reducing component count. |
| Portable Medical Sensor Module | Compact IoT Edge Node |
|
Use Scenario: Power gating non-critical sensors (e.g., ambient light, accelerometer) to extend battery life in wearable health monitors. IC Role / Device Role / Timing Role: Load switch managing power to sensor subsystems based on motion-detection wake events. Use Value: 0.36-mm profile avoids interference with flex PCB folding and fits under thin bezels in wrist-worn form factors. |
Use Scenario: Controlling power to LoRaWAN or BLE radio during deep-sleep cycles in battery-operated environmental sensors. IC Role / Device Role / Timing Role: Ultra-low-leakage (100 nA IDSS) switch minimizing quiescent current in multi-year deployments. Use Value: 500-mW power rating supports 2.1-A peak transmit current without thermal throttling on minimal PCB copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H7TFA | Higher RDS(on) (200 mΩ @ 4.5 V), larger 0603 package (1.6 × 0.8 mm), no integrated ESD diode. | Requires external ESD protection; less suitable for high-density handheld layouts where board area is premium. | Select when cost sensitivity outweighs size constraints and ESD robustness is managed at system level. |
| AO3400A | Higher VDS (30 V), higher Qg (24 nC), larger SOT-23 package (2.9 × 1.6 mm), no HBM rating specified. | Over-specified voltage rating adds unnecessary cost and size; lacks documented ESD hardening for consumer touch interfaces. | Choose only if 30-V headroom is required for industrial input transients and PCB space permits larger footprint. |
Compared with DMN10H7TFA and AO3400A, the CSD13381F4T delivers the smallest footprint, lowest gate charge, and certified ESD protection-making it the optimal choice for space- and reliability-critical single-cell battery switches where 12-V rating is sufficient.
Availability
CSD13381F4T is available at Aetrix Electronics and suitable for smartphone power management, wireless earbud battery protection, and portable medical sensor modules requiring stable component supply across high-mix, low-volume production runs.
Supply support for CSD13381F4T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and personal electronics markets.
The CSD13381F4T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically to shrink power-switching footprints in battery-powered handheld devices without sacrificing electrical performance or reliability.
FAQ
What is the maximum continuous drain current for CSD13381F4T at 25°C ambient?
The CSD13381F4T supports 2.1 A continuous drain current at TA = 25°C with typical RθJA = 90°C/W on 1-inch² copper. This rating assumes no airflow and accounts for self-heating; actual current must be reduced at elevated ambient temperatures or with smaller PCB copper areas.
Does CSD13381F4T require an external gate resistor for stability?
The CSD13381F4T does not require an external gate resistor for basic switching, but a 2–10 Ω series resistor is recommended to dampen ringing caused by PCB trace inductance and minimize EMI. The device's low Qgd (140 pC) inherently reduces Miller-effect instability during turn-off transitions.
Can CSD13381F4T be used in high-side switch configurations?
Yes, the CSD13381F4T can operate as a high-side switch when driven with appropriate gate voltage relative to the source. However, its 0.85-V threshold and lack of integrated charge pump mean external level-shifting or gate-driver ICs are needed for 12-V rail switching; it is optimized for low-side or low-voltage high-side (≤5 V) use.
What is the thermal resistance (RθJA) of CSD13381F4T on a minimal PCB layout?
On a FR4 PCB with minimum copper mounting area, the CSD13381F4T has a typical RθJA of 250°C/W. This value reflects worst-case thermal performance and should be used for conservative junction temperature calculations when copper pour is restricted by dense routing or small form factors.
Is CSD13381F4T compatible with lead-free reflow profiles?
Yes, the CSD13381F4T is RoHS-compliant with NiAu lead finish and carries a JEDEC Level-1 moisture sensitivity rating, supporting peak reflow temperatures up to 260°C. Standard IPC/JEDEC J-STD-020 profiles apply, and no pre-bake is required for reels shipped in dry packaging.
CSD13381F4T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- FemtoFET™
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.4 nC @ 4.5 V
- Vgs (Max):
- 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 200 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-PICOSTAR
CSD13381F4T FAQ
1.How can I place an order for CSD13381F4T through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD13381F4T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD13381F4T reliable?
The price and inventory of CSD13381F4T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD13381F4T is usually 5 days.
3.What payment methods are accepted for CSD13381F4T?
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4.How is shipping managed for CSD13381F4T?
CSD13381F4T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD13381F4T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD13381F4T?
For technical support, including CSD13381F4T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD13381F4T requirements.
6.How does Aetrix verify that CSD13381F4T is sourced from the original manufacturer or authorized distributors?
All CSD13381F4T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD13381F4T meets industry standards.
7.What is the process for return or replacement of CSD13381F4T?
All CSD13381F4T units undergo pre-shipment inspection (PSI). If there is an issue with CSD13381F4T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD13381F4T part is unused and in its original packaging.
Return procedure for CSD13381F4T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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