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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Texas Instruments CSD13383F4T

Name: CSD13383F4T
Brand: Texas Instruments
SKU: CSD13383F4T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CSD13383F4T

Manufacturer:: Texas Instruments

Category:: FETs, MOSFETs

Package:: 3-XFDFN

Datasheet:: CSD13383F4T.pdf

Description:: MOSFET N-CH 12V 2.9A 3PICOSTAR

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Product details

Overview

CSD13383F4T from Texas Instruments is a 12 V, 37 mΩ N-channel FemtoFET™ MOSFET in a 0402 (1.0 mm × 0.6 mm) surface-mount package, optimized for ultra-compact load switching in single-cell battery systems with 2.9 A continuous drain current and integrated >2 kV HBM/CDM ESD protection.

For engineers reviewing the CSD13383F4T datasheet, CSD13383F4T pinout, CSD13383F4T application, or CSD13383F4T equivalent, key selection criteria include its 0.36 mm profile, 2.0 nC total gate charge, 37 mΩ R_DS(on) at 4.5 V, and compatibility with space-constrained mobile power rails requiring low-Q_gd and fast switching.

Technical Context

This device uses TI's FemtoFET™ silicon process to achieve sub-1 mm footprint while maintaining robust 12 V drain-source rating and low thermal resistance (R_θJA = 250°C/W on minimal PCB copper). Its gate threshold voltage of 1.0 V (typ) enables direct drive from 1.8 V and 2.5 V logic.

The MOSFET integrates a body diode with 0.7–1.0 V forward voltage at 0.5 A and supports unclamped inductive switching up to 2.2 mJ avalanche energy. Dynamic parameters-Q_gd = 0.6 nC, C_iss = 224–291 pF, t_d(off) = 250 ns-support high-frequency load switching in portable DC-DC and power-path applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum blocking voltage compatible with Li-ion and dual-cell alkaline input rails
R_DS(on)	37 mΩ at V_GS = 4.5 V - Enables <100 mW conduction loss at 0.5 A in compact battery switches
Q_g	2.0 nC - Reduces gate drive power and enables efficient operation with low-current GPIOs
Q_gd	0.6 nC - Minimizes Miller-induced switching delay and improves turn-off control in high-dV/dt environments
Package	PICOSTAR (YJC), 3-pin 0402 - 1.0 mm × 0.6 mm × 0.36 mm footprint ideal for <1 mm² board area allocation
ESD Rating	>2 kV HBM / >2 kV CDM - Eliminates need for external ESD protection in handheld front-end switches
I_D (cont)	2.9 A - Supports peak loads in USB-C PD sink paths and PMIC-controlled peripheral rails

Pinout & Package

Packaged in PICOSTAR (YJC) 3-terminal 0402 SMD format with exposed padless construction; terminals are arranged linearly (Drain–Gate–Source) on bottom side, compatible with standard reflow profiles (MSL Level-1, 260°C peak).

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	High-side switch output node	Connected to load; handles full switched current and must be routed with thermal relief on PCB
2 (Gate)	Control input	Low-capacitance node (C_iss = 224–291 pF); requires clean, low-inductance trace to avoid ringing
3 (Source)	Power return reference	Internally tied to substrate; must connect directly to local ground plane for stable threshold and EMI control

Key Features

Feature	Design Value
Ultra-small footprint	1.0 mm × 0.6 mm area reduces PCB real estate by ≥60% vs. standard SOT-23 MOSFETs in load-switch designs
Low Q_gd/Q_g ratio	0.3 (0.6 nC / 2.0 nC) improves switching efficiency and dV/dt immunity in noisy mobile environments
Integrated ESD protection	>2 kV HBM/CDM rating eliminates discrete TVS requirements in consumer-grade USB and display power rails
0.36 mm profile	Enables stacking under thin bezels or beneath flex connectors in ultra-slim smartphones and wearables
RoHS & lead-free	NIAU finish meets global environmental compliance without compromising solderability or thermal cycling reliability

Applications

Smartphone Power Path	Wireless Earbud Charging Case
Use Scenario: Switching power between USB-C input and internal Li-ion battery during charging. IC Role / Device Role / Timing Role: Low-side load switch controlling battery charge enable path with fast turn-on/turn-off timing. Use Value: 37 mΩ R_DS(on) minimizes voltage drop across switch, preserving charging efficiency; 0.36 mm height avoids interference with stacked battery modules.	Use Scenario: Enabling/disabling power to earbud cradle contacts when lid opens/closes. IC Role / Device Role / Timing Role: High-speed, low-leakage power gate driven directly by lid-sense GPIO. Use Value: 1 µA I_DSS leakage ensures multi-week shelf life; 2.0 nC Q_g allows reliable switching from 1.8 V microcontroller outputs.
Portable Medical Sensor Hub	Bluetooth Tracker Module
Use Scenario: Isolating sensor subsystems (ECG, SpO₂) from main MCU during sleep mode to reduce quiescent current. IC Role / Device Role / Timing Role: Ultra-low-profile power gate enabling sub-µA system standby via controlled rail shutdown. Use Value: 0.7–1.25 V V_GS(th) range ensures consistent turn-on with aging coin-cell supplies; >2 kV ESD protects against handling damage in field-deployed units.	Use Scenario: Controlling GPS/GNSS receiver power in asset trackers powered by primary lithium batteries. IC Role / Device Role / Timing Role: Battery-saving load switch activated only during periodic location acquisition bursts. Use Value: 2.9 A I_D rating supports transient GPS peak currents; 0402 footprint conserves space in postage-stamp-sized PCBs.

Smartphone Power Path

Wireless Earbud Charging Case

Use Scenario: Switching power between USB-C input and internal Li-ion battery during charging.

IC Role / Device Role / Timing Role: Low-side load switch controlling battery charge enable path with fast turn-on/turn-off timing.

Use Value: 37 mΩ R_DS(on) minimizes voltage drop across switch, preserving charging efficiency; 0.36 mm height avoids interference with stacked battery modules.

Use Scenario: Enabling/disabling power to earbud cradle contacts when lid opens/closes.

IC Role / Device Role / Timing Role: High-speed, low-leakage power gate driven directly by lid-sense GPIO.

Use Value: 1 µA I_DSS leakage ensures multi-week shelf life; 2.0 nC Q_g allows reliable switching from 1.8 V microcontroller outputs.

Portable Medical Sensor Hub

Bluetooth Tracker Module

Use Scenario: Isolating sensor subsystems (ECG, SpO₂) from main MCU during sleep mode to reduce quiescent current.

IC Role / Device Role / Timing Role: Ultra-low-profile power gate enabling sub-µA system standby via controlled rail shutdown.

Use Value: 0.7–1.25 V V_GS(th) range ensures consistent turn-on with aging coin-cell supplies; >2 kV ESD protects against handling damage in field-deployed units.

Use Scenario: Controlling GPS/GNSS receiver power in asset trackers powered by primary lithium batteries.

IC Role / Device Role / Timing Role: Battery-saving load switch activated only during periodic location acquisition bursts.

Use Value: 2.9 A I_D rating supports transient GPS peak currents; 0402 footprint conserves space in postage-stamp-sized PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H7TSE-7	Higher R_DS(on) (70 mΩ @ 4.5 V), larger SOT-723 (1.25 mm × 1.25 mm) package, no integrated ESD diode	Suitable for less space-constrained industrial sensors where ESD protection is added externally	Select if higher voltage margin (20 V) is required and board area permits 2.5× larger footprint
AO3414	Lower V_DS (20 V), higher Q_g (4.5 nC), SO-23 package (2.9 mm × 1.6 mm), no ESD rating specified	Better for general-purpose switching where gate drive strength exceeds 2.0 nC and layout space allows SO-23	Choose when cost sensitivity outweighs size constraints and ESD robustness is managed at system level

Compared with DMN10H7TSE-7 and AO3414, the CSD13383F4T delivers the smallest board area, lowest gate charge, and certified ESD protection-making it optimal for next-generation wearable and ultra-portable designs where every 0.1 mm² and 0.1 nC matters.

Availability

CSD13383F4T is available at Aetrix Electronics and suitable for smartphone power management, wireless earbud charging cases, portable medical sensor hubs, and Bluetooth tracker modules requiring stable component supply and rapid prototyping support.

Supply support for CSD13383F4T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a U.S.-based semiconductor company specializing in analog, embedded processing, and power management technologies with broad industrial and consumer design infrastructure.

The CSD13383F4T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically for ultra-miniaturized load switching in battery-powered portable electronics where footprint, height, and gate drive efficiency are critical.

FAQ

What is the maximum continuous drain current rating for the CSD13383F4T?

The CSD13383F4T has a maximum continuous drain current (I_D) of 2.9 A at T_A = 25°C with typical R_θJA = 250°C/W. This rating assumes adequate PCB copper area for thermal dissipation; derating applies above 25°C ambient or with reduced copper. The CSD13383F4T datasheet specifies pulsed drain current up to 18.5 A for ≤100 µs pulses at ≤1% duty cycle.

Does the CSD13383F4T require an external gate resistor for stable switching?

The CSD13383F4T does not require an external gate resistor for basic on/off operation due to its low Q_g (2.0 nC) and Q_gd (0.6 nC), but a small series resistor (2–10 Ω) is recommended to dampen potential gate ringing in high-dV/dt layouts. The CSD13383F4T's low C_iss (224–291 pF) and fast t_d(on)/t_d(off) make it responsive to clean, low-inductance gate traces without mandatory external damping.

Can the CSD13383F4T be used in a high-side switch configuration?

The CSD13383F4T is an N-channel MOSFET and is not suited for direct high-side switching without a gate driver capable of providing V_GS > V_DS. It is optimized as a low-side or floating-load switch. For high-side use, the CSD13383F4T would require a charge-pump or bootstrap gate driver-making it less efficient than purpose-built high-side switches. Its datasheet and application notes specify low-side load switch use cases.

What is the thermal resistance (R_θJA) of the CSD13383F4T under standard PCB conditions?

The CSD13383F4T has two R_θJA values: 90°C/W when mounted on FR4 with 1 inch² (6.45 cm²), 2 oz. copper, and 250°C/W when mounted with minimum copper area. The latter value (250°C/W) is the default for conservative thermal design in space-constrained layouts. Both values are measured per JEDEC JESD51 standards and apply to the PICOSTAR (YJC) package used by the CSD13383F4T.

Is the CSD13383F4T compatible with lead-free reflow processes?

Yes, the CSD13383F4T is fully compatible with lead-free reflow processes. It carries an MSL Level-1 rating (unlimited floor life) and is qualified for peak reflow temperatures up to 260°C. The device uses NIAU (Nickel-Iridium-Au) lead finish and is RoHS compliant, meeting IPC/JEDEC J-STD-020 requirements for Pb-free assembly. The CSD13383F4T tape-and-reel packaging (250-unit small reel) supports automated SMT placement.

CSD13383F4T Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: FemtoFET™

Package/Case:: 3-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 2.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 44mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id:: 1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 2.6 nC @ 4.5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 291 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-PICOSTAR

CSD13383F4T FAQ

1.How can I place an order for CSD13383F4T through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD13383F4T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD13383F4T reliable?

The price and inventory of CSD13383F4T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD13383F4T is usually 5 days.

3.What payment methods are accepted for CSD13383F4T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD13383F4T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CSD13383F4T?

CSD13383F4T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD13383F4T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD13383F4T?

For technical support, including CSD13383F4T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD13383F4T requirements.

6.How does Aetrix verify that CSD13383F4T is sourced from the original manufacturer or authorized distributors?

All CSD13383F4T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD13383F4T meets industry standards.

7.What is the process for return or replacement of CSD13383F4T?

All CSD13383F4T units undergo pre-shipment inspection (PSI). If there is an issue with CSD13383F4T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD13383F4T part is unused and in its original packaging.

Return procedure for CSD13383F4T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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