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Texas Instruments CSD13385F5T
- Part No.:
- CSD13385F5T
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 3-SMD, No Lead
- Datasheet:
-
CSD13385F5T.pdf
- Description:
- MOSFET N-CH 12V 4.3A 3PICOSTAR
- Quantity:
- Payment:
- Shipping:
Inventory:35,125
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Product details
Overview
CSD13385F5T from Texas Instruments is a 12-V, 15-mΩ N-Channel FemtoFET™ MOSFET in a 3-pin PICOSTAR (YJK) package measuring 1.53 mm × 0.77 mm × 0.36 mm max height, optimized for ultra-compact industrial load switching and mobile power management with 4.3-A continuous drain current at 25°C and integrated >4-kV HBM ESD protection.
For engineers reviewing the CSD13385F5T datasheet, CSD13385F5T pinout, CSD13385F5T application, or CSD13385F5T equivalent, this device delivers verified low RDS(on) (15 mΩ @ VGS = 4.5 V), ultra-low gate charge (Qg = 3.9 nC), and thermally robust operation from –55°C to 150°C - critical for space-constrained DC-DC converter enable paths and battery protection circuits.
Technical Context
This N-Channel enhancement-mode MOSFET uses TI's FemtoFET™ silicon process to achieve sub-1-mm width and 0.36-mm profile while maintaining stable threshold voltage (VGS(th) = 0.5–1.2 V) and low dynamic capacitance (Ciss = 519–674 pF, Coss = 305–396 pF).
Its gate drive compatibility with 1.8-V logic (RDS(on) = 26 mΩ @ VGS = 1.8 V), fast switching (td(on) = 7 ns, tf = 10 ns), and integrated body diode (VSD = 0.67–1.0 V @ ISD = 0.9 A) support high-frequency synchronous rectification and low-voltage rail switching in portable electronics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - Maximum drain-to-source blocking voltage; defines safe operating range in 3.3-V/5-V/12-V system rails. |
| RDS(on) | 15 mΩ @ VGS = 4.5 V - Enables <100-mW conduction loss at 0.9-A load; critical for thermal budget in sealed enclosures. |
| Qg | 3.9 nC - Low total gate charge reduces driver power and enables efficient 1-MHz+ PWM control without excessive gate drive loss. |
| ID (cont) | 4.3 A @ TA = 25°C - Sustained current capability with standard PCB copper; supports USB-C PD load switches and PMIC enable FETs. |
| VGS(th) | 0.8 V (typ) - Ensures reliable turn-on with 1.2-V and 1.8-V logic outputs; eliminates need for level-shifting in low-voltage microcontrollers. |
| HBM ESD | >4 kV - Integrated protection eliminates external TVS diodes in handheld device power rails, reducing BOM count and board area. |
| Package | PICOSTAR (YJK), 3-pin - 1.53 mm × 0.77 mm footprint with 0.36-mm max height; compatible with 0201-class placement equipment and reflow profiles. |
Pinout & Package
Packaged in Texas Instruments' ultra-miniature PICOSTAR (YJK) leadless surface-mount package (1.53 mm × 0.77 mm × 0.36 mm max), optimized for automated assembly and high-density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts 1.8–4.5-V logic-level drive; low Qgd (0.39 nC) minimizes Miller-induced shoot-through risk. |
| Pin 2 | Source | Reference node for gate drive and current return path; internally connected to substrate; requires low-inductance ground plane. |
| Pin 3 | Drain | High-side or low-side power path terminal; rated for 12-V blocking and 41-A pulsed current; connects to load or supply rail. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 1.53 mm × 0.77 mm - Reduces PCB area by >50% vs. comparable 0402 MOSFETs; enables single-layer routing in wearables. |
| Low-profile height | 0.36 mm max - Allows stacking under displays or batteries; meets mechanical clearance requirements in slim smartphones and earbuds. |
| Integrated ESD protection | >4-kV HBM / >2-kV CDM - Eliminates discrete ESD diodes in USB, I²C, and GPIO power-switching nodes; simplifies layout validation. |
| Low Qgd/Qg ratio | 0.39 nC / 3.9 nC = 0.1 - Improves hard-switching efficiency and reduces gate-drive overshoot in buck converter high-side FETs. |
| Lead- and halogen-free | RoHS-compliant construction - Meets IPC-J-STD-020 moisture sensitivity Level-1 (260°C peak reflow); supports lead-free manufacturing. |
Applications
| Smartphone Power Management | USB-C Port Protection |
|---|---|
|
Use Scenario: Enabling/disabling VBUS power to USB-C peripherals in dual-role devices. IC Role / Device Role / Timing Role: Low-side load switch controlling 5-V/3-A USB-C power path with fast turn-on (td(on) = 7 ns) and minimal voltage drop. Use Value: 15-mΩ RDS(on) limits voltage drop to <45 mV at 3 A, preserving USB-C voltage compliance while enabling compact 0.36-mm-thick module designs. |
Use Scenario: Overcurrent and short-circuit protection for USB-C downstream ports in docking stations. IC Role / Device Role / Timing Role: High-speed switching element in current-limiting circuitry, responding within nanoseconds to fault conditions. Use Value: 41-A pulsed drain rating and 0.39-nC Qgd allow rapid fault isolation before damage occurs, meeting USB-IF Type-C specification timing requirements. |
| Wireless Earbud Battery Switching | Industrial Sensor Node Load Control |
|
Use Scenario: Isolating charging circuitry from main battery during active audio playback to prevent leakage and thermal drift. IC Role / Device Role / Timing Role: Ultra-low-profile N-Channel switch placed between Li-ion cell and PMIC input, driven directly by 1.8-V MCU GPIO. Use Value: 26-mΩ RDS(on) @ VGS = 1.8 V ensures <50-mW loss at 100-mA bias current, extending runtime in sub-2-g earbuds with tight thermal envelopes. |
Use Scenario: Remote on/off control of 12-V solenoid valves or LED arrays in factory automation sensors. IC Role / Device Role / Timing Role: Industrial-grade load switch interfacing with 3.3-V PLC I/O modules, handling repetitive 4.3-A inrush currents. Use Value: –55°C to 150°C operating range and 1.4-W power dissipation (max Cu) ensure reliability in uncontrolled ambient environments without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-Channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H7TIS-13 | 10-V VDS, 17-mΩ RDS(on) @ 4.5 V, SOT-723 (1.25 mm × 0.85 mm), no integrated ESD diode | Limited to ≤10-V systems; requires external ESD protection in consumer interfaces | Preferred where lower VDS suffices and board space allows slightly wider package; not suitable for 12-V USB-C VBUS. |
| AO3414 | 20-V VDS, 50-mΩ RDS(on) @ 4.5 V, SOT-23 (2.9 mm × 1.6 mm), 1.1-mm height, no integrated ESD | 3.8× larger footprint and 3× higher RDS(on); lacks ESD rating and ultra-low profile | Acceptable for cost-sensitive industrial controls where size and ESD are secondary; unsuitable for portable electronics. |
Compared with DMN10H7TIS-13 and AO3414, CSD13385F5T uniquely combines 12-V rating, 15-mΩ on-resistance, 0.36-mm height, and >4-kV HBM in a 1.53-mm × 0.77-mm footprint - making it the only option for next-generation ultra-thin USB-C accessories and miniaturized IoT sensor nodes requiring full-system ESD immunity.
Availability
CSD13385F5T is available at Aetrix Electronics and suitable for industrial load switching, portable power management, and USB-C interface protection requiring stable component supply across high-mix, low-volume production runs.
Supply support for CSD13385F5T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with over 90 years of innovation in high-reliability electronic components.
CSD13385F5T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically for extreme miniaturization in battery-powered and space-constrained applications - delivering performance parity with larger packages in sub-1-mm footprints.
FAQ
What is the maximum continuous drain current rating for CSD13385F5T at 25°C ambient?
The CSD13385F5T is rated for 4.3 A continuous drain current (ID) at TA = 25°C with minimum copper PCB layout, and 7.1 A with maximum copper. This rating assumes proper thermal management per TI's recommended PCB land pattern and is validated per JEDEC JESD51-2 standards. The CSD13385F5T datasheet specifies these values in its Absolute Maximum Ratings table.
Does CSD13385F5T include built-in ESD protection, and what are the certified ratings?
Yes, the CSD13385F5T integrates an ESD protection diode rated at >4-kV Human-Body Model (HBM) and >2-kV Charged-Device Model (CDM), as confirmed in the device's Features and Absolute Maximum Ratings sections. This eliminates the need for external ESD components in USB, I²C, and GPIO power-switching applications, and is verified per ANSI/ESDA/JEDEC JS-001 and JS-002 test standards.
What is the gate threshold voltage range for CSD13385F5T, and how does it support low-voltage logic drive?
The CSD13385F5T has a gate threshold voltage (VGS(th)) range of 0.5 V to 1.2 V, with a typical value of 0.8 V at IDS = 250 µA. This enables direct drive from 1.2-V, 1.8-V, and 2.5-V logic families without level shifters. The CSD13385F5T maintains 26-mΩ RDS(on) at VGS = 1.8 V, ensuring robust conduction even at lowest core voltages.
What package type and dimensions does CSD13385F5T use, and is it compatible with standard SMT processes?
The CSD13385F5T uses the PICOSTAR (YJK) package: a 3-pin, leadless, solder-land design measuring 1.53 mm × 0.77 mm × 0.36 mm max height. It is RoHS-compliant, moisture-sensitivity Level-1 (260°C peak reflow), and qualified for standard Type-3 solder paste and 0201-class pick-and-place equipment. The CSD13385F5T mechanical drawing and tape-and-reel specifications confirm full compatibility with IPC-7351B Class L footprints.
How does the low gate charge of CSD13385F5T improve switching efficiency in high-frequency applications?
The CSD13385F5T features a total gate charge (Qg) of 3.9 nC and gate-to-drain charge (Qgd) of 0.39 nC, resulting in a Qgd/Qg ratio of 0.1. This minimizes Miller plateau duration and reduces gate-drive power loss, enabling clean 1-MHz+ switching in DC-DC converters and motor drivers. The CSD13385F5T's low Qg directly lowers driver IC power consumption and improves overall system efficiency compared to alternatives with >6-nC Qg.
CSD13385F5T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- FemtoFET™
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 900mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5 nC @ 4.5 V
- Vgs (Max):
- 8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 674 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-PICOSTAR
CSD13385F5T FAQ
1.How can I place an order for CSD13385F5T through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD13385F5T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD13385F5T reliable?
The price and inventory of CSD13385F5T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD13385F5T is usually 5 days.
3.What payment methods are accepted for CSD13385F5T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD13385F5T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD13385F5T?
CSD13385F5T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD13385F5T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD13385F5T?
For technical support, including CSD13385F5T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD13385F5T requirements.
6.How does Aetrix verify that CSD13385F5T is sourced from the original manufacturer or authorized distributors?
All CSD13385F5T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD13385F5T meets industry standards.
7.What is the process for return or replacement of CSD13385F5T?
All CSD13385F5T units undergo pre-shipment inspection (PSI). If there is an issue with CSD13385F5T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD13385F5T part is unused and in its original packaging.
Return procedure for CSD13385F5T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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