Texas Instruments CSD16340Q3T

Overview

CSD16340Q3T from Texas Instruments is a 25-V N-channel NexFET™ power MOSFET in an 8-pin VSON-CLIP (DQG) package, optimized for 5 V gate drive in synchronous buck converters. It delivers R_DS(on) = 4.3 mΩ at V_GS = 4.5 V and 20 A, supports 60 A continuous drain current at T_C = 25°C, and features ultra-low Q_g = 6.5 nC and Q_gd = 1.2 nC - enabling high-efficiency point-of-load regulation in telecom and computing systems.

For engineers reviewing the CSD16340Q3T datasheet, CSD16340Q3T pinout, CSD16340Q3T application, or CSD16340Q3T equivalent, key selection criteria include its 3.8 mΩ R_DS(on) at 8 V drive, avalanche-rated construction (E_AS = 80 mJ), thermal resistance θ_JCbot = 0.1°C/W, RoHS-compliant Pb-free plating, and SON 3.3 mm × 3.3 mm footprint compatibility with high-density PCB layouts.

Technical Context

This device employs a trench-gate silicon process with copper-clip packaging to minimize parasitic inductance and thermal resistance. Its low threshold voltage (V_th = 0.85 V typ) and strong transconductance (g_fs = 121 S) enable fast switching with minimal gate drive loss in high-frequency DC/DC stages.

The integrated body diode exhibits V_SD = 0.8–1.0 V at 20 A and Q_rr = 14.5 nC, supporting efficient synchronous rectification. Dynamic parameters - including C_iss = 1200 pF, C_oss = 840 pF, and C_rss = 61 pF at V_GS = 0 V, V_DS = 12.5 V - are optimized to reduce Miller-induced turn-on risk and improve EMI performance in hard-switched topologies.

Key Specifications

Pinout & Package

Package: VSON-CLIP (DQG), 8-pin, 3.3 mm × 3.3 mm × 0.95–1.10 mm height, exposed thermal pad on bottom surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BSC010N04LS and SiR872DP, the CSD16340Q3T offers the best balance of low R_DS(on), minimal Q_g, and industry-leading θ_JCbot = 0.1°C/W - making it optimal for thermally constrained, high-frequency 25 V-class POL converters where efficiency and layout density are prioritized.

Availability

CSD16340Q3T is available at Aetrix Electronics and suitable for telecom point-of-load converters, server VRMs, and industrial FPGA core rails requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for CSD16340Q3T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management ICs for industrial, automotive, and communications markets.

The CSD16340Q3T belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in space-constrained infrastructure equipment - emphasizing low Q_g, low R_DS(on), and robust thermal performance.

FAQ

What is the maximum continuous drain current for CSD16340Q3T at 100°C case temperature?

The CSD16340Q3T supports 35 A continuous drain current at T_C = 100°C, derived from its 60 A rating at 25°C and normalized derating curve in Figure 12 of the SLPS247E datasheet. This value assumes proper PCB copper area and thermal vias beneath the exposed pad to maintain θ_JC ≤ 0.1°C/W. At T_C = 125°C, the limit drops to 25 A.

Does CSD16340Q3T require a gate resistor for stability in 500 kHz synchronous buck operation?

Yes - a 2 Ω gate resistor is recommended for CSD16340Q3T in 500 kHz operation, as validated in TI's TIDA-010032 reference design. This value balances switching speed (t_r = 16.1 ns, t_f = 5.2 ns) against ringing and EMI, leveraging the device's low 1.5–3 Ω intrinsic gate resistance (R_g) and 1.2 nC Q_gd to suppress Miller-induced oscillation.

Can CSD16340Q3T be used as a replacement for CSD16321Q5 in a 12 V input, 1.2 V/30 A POL design?

No - the CSD16340Q3T is not a direct replacement for CSD16321Q5. While both are NexFET™ devices, the CSD16321Q5 has V_DS = 30 V and R_DS(on) = 2.9 mΩ @ 4.5 V, whereas the CSD16340Q3T is rated for 25 V and 4.3 mΩ. Substituting CSD16340Q3T would reduce voltage margin and increase conduction loss by ~48%, risking thermal overload at 30 A.

What is the recommended stencil aperture size for solder paste printing of CSD16340Q3T?

The recommended stencil opening for CSD16340Q3T is 3.60 mm × 3.60 mm for the thermal pad, with 0.30 mm thickness and 1.30 mm × 1.75 mm apertures for the signal pins, per TI application note SLPA005 and mechanical drawing M0144-01. This ensures sufficient solder volume for thermal pad wetting while preventing bridging on the 0.65 mm pitch signal pins.

Is CSD16340Q3T qualified for automotive applications per AEC-Q101?

No - the CSD16340Q3T is not AEC-Q101 qualified. It is rated for industrial temperature range (–55°C to 150°C) and intended for telecom, computing, and industrial equipment. For automotive use, TI recommends the AEC-Q101-qualified CSD17579Q3T (25 V, 4.5 mΩ), which shares the same Q3 package and pinout but includes extended reliability testing.