Texas Instruments CSD16401Q5

Overview

CSD16401Q5 from Texas Instruments is a 25-V N-channel NexFET™ power MOSFET in a VSON-CLIP (DQH) 8-pin package, optimized for high-efficiency synchronous buck converters. It delivers 1.3 mΩ R_DS(on) at V_GS = 10 V, 21 nC total gate charge, and 5.2 nC gate-to-drain charge - enabling low conduction and switching losses in point-of-load applications for networking, telecom, and computing systems.

For engineers reviewing the CSD16401Q5 datasheet, CSD16401Q5 pinout, CSD16401Q5 application, or CSD16401Q5 equivalent, key selection criteria include its ultra-low Q_g/Q_gd, avalanche-rated ruggedness, 100-A continuous drain current (package-limited), thermal resistance of 0.8°C/W junction-to-case, and compatibility with 4.5-V and 10-V gate drive systems.

Technical Context

This MOSFET employs a silicon-based planar trench process optimized for low R_DS(on) and fast switching dynamics. Its gate charge profile (Q_g = 21 nC, Q_gd = 5.2 nC) supports high-frequency operation up to 1 MHz in synchronous rectification, while its 0.8°C/W R_θJC enables direct thermal coupling to PCB copper pads.

The device integrates an intrinsic body diode with 0.85–1.0 V forward voltage at 40 A and 72 nC reverse recovery charge, making it suitable as both high-side and low-side switch in hard-switched and resonant topologies where diode performance impacts efficiency and EMI.

Key Specifications

Pinout & Package

VSON-CLIP (DQH) 8-pin plastic package with exposed thermal pad (Pin 9), 5.0 mm × 6.0 mm footprint, 1.05 mm max height. Thermal pad must be soldered to PCB for mechanical integrity and thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with CSD16401Q5, the BSC014N04LS offers higher voltage margin but lacks avalanche rating, while the NTMFS4C023P trades off conduction efficiency and thermal capability for broader vendor availability - making CSD16401Q5 optimal for high-reliability 24-V POL systems demanding low-loss and ruggedness.

Availability

CSD16401Q5 is available at Aetrix Electronics and suitable for networking infrastructure, telecom power supplies, and computing VRMs requiring stable component supply, long-term manufacturability, and TI's qualified production release status.

Supply support for CSD16401Q5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions across industrial, automotive, and communications markets.

The CSD16401Q5 belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in space-constrained point-of-load applications.

FAQ

What is the maximum continuous drain current rating for the CSD16401Q5?

The CSD16401Q5 has a continuous drain current rating of 100 A limited by package thermal constraints at T_A = 25°C, and 38 A limited by silicon at the same ambient temperature. At T_C = 25°C, the silicon-limited rating rises to 261 A. These values assume proper PCB thermal design per TI's recommended 1-in² 2-oz copper pad.

Does the CSD16401Q5 have an integrated body diode, and what are its key parameters?

Yes, the CSD16401Q5 includes a monolithic body diode with a forward voltage of 0.85–1.0 V at 40 A and 0 V gate bias. Its reverse recovery charge is 72 nC and recovery time is 45 ns under standard test conditions (V_DD = 15 V, I_F = 40 A, di/dt = 300 A/μs), supporting efficient synchronous rectification in buck converters.

What is the gate threshold voltage range for the CSD16401Q5, and how does it vary with temperature?

The CSD16401Q5 has a gate threshold voltage (V_GS(th)) range of 1.2–1.9 V at T_A = 25°C, with a typical value of 1.5 V. As temperature increases, V_GS(th) decreases linearly - dropping to approximately 1.1 V at 125°C and 0.9 V at 150°C - a characteristic confirmed in Figure 5-6 of the official datasheet.

Is the CSD16401Q5 compatible with 4.5-V gate drive, and what is its R_DS(on) at that voltage?

Yes, the CSD16401Q5 is fully specified for 4.5-V gate drive. At V_GS = 4.5 V and I_D = 40 A, its R_DS(on) is 1.8–2.3 mΩ (typical 1.8 mΩ), enabling use with standard 5-V logic-level controllers and eliminating need for level-shifting circuitry in many POL designs.

What package type and thermal requirements apply to the CSD16401Q5?

The CSD16401Q5 uses the VSON-CLIP (DQH) 8-pin package with an exposed thermal pad (Pin 9). The thermal pad must be soldered to a dedicated PCB copper area for mechanical reliability and thermal performance. TI specifies R_θJC = 0.8°C/W when mounted on a 1-in² 2-oz Cu pad, and R_θJA = 50°C/W under those conditions.