Texas Instruments CSD16401Q5T

Overview

CSD16401Q5T from Texas Instruments is a 25-V, 1.3-mΩ N-channel NexFET™ power MOSFET in an 8-pin VSON-CLIP (DQH) package, optimized for high-efficiency synchronous buck converters in networking and telecom point-of-load applications, with ultra-low Qg (21 nC) and Qgd (5.2 nC), avalanche-rated operation, and R_θJC = 0.8°C/W.

For engineers reviewing the CSD16401Q5T datasheet, CSD16401Q5T pinout, CSD16401Q5T application, or CSD16401Q5T equivalent, this page delivers verified electrical specs, thermal performance data, package layout guidance, and real-world design context for high-current DC/DC power stages.

Technical Context

This MOSFET employs a silicon-limited, clip-bonded VSON-CLIP structure to achieve low R_DS(on) (1.3 mΩ @ V_GS = 10 V) and minimal gate charge-critical for reducing switching losses in high-frequency (>500 kHz), high-current (>40 A) synchronous FETs. Its 0.8°C/W junction-to-case thermal resistance enables direct thermal pad mounting to PCB copper for efficient heat extraction.

The device features a 1.5-V threshold voltage (V_GS(th)), operates across –55°C to 150°C, and supports pulsed drain currents up to 240 A. Its diode forward voltage is 0.85 V at 40 A, and reverse recovery charge is 72 nC-key parameters for evaluating body diode conduction and shoot-through risk in synchronous rectification.

Key Specifications

Pinout & Package

The CSD16401Q5T uses an 8-pin VSON-CLIP (DQH) package with exposed thermal pad (Pin 9), measuring 5.0 mm × 6.0 mm × 1.05 mm max height. The clip-bonded construction connects die source directly to the thermal pad and pins 6–8 for lowest possible source inductance and thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BSC010N04LS6 and NTMFS4C09NT1G, the CSD16401Q5T delivers superior thermal performance (0.8°C/W vs. ≥1.5°C/W) and higher avalanche energy (500 mJ vs. ≤320 mJ), making it preferred for compact, high-reliability POL designs where thermal headroom and transient robustness are critical.

Availability

CSD16401Q5T is available at Aetrix Electronics and suitable for networking infrastructure, telecom base station power supplies, and AI accelerator board core voltage regulation requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for CSD16401Q5T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.

The CSD16401Q5T belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion in datacenter, telecom, and computing applications where low R_DS(on), fast switching, and thermal performance are paramount.

FAQ

What is the maximum continuous drain current for CSD16401Q5T at 25°C ambient?

The CSD16401Q5T has a package-limited continuous drain current of 100 A at T_A = 25°C with proper PCB copper area (1-in² 2-oz Cu). Its silicon-limited current is 261 A, but thermal constraints and package construction define the practical limit. Always verify junction temperature using R_θJA = 50°C/W and actual board layout before finalizing thermal design for CSD16401Q5T.

Does CSD16401Q5T support 4.5-V gate drive in high-efficiency POL applications?

Yes, the CSD16401Q5T is fully characterized at V_GS = 4.5 V, delivering R_DS(on) = 1.8 mΩ and Q_g = 21 nC-making it ideal for 5-V gate-driven synchronous buck controllers. Its 1.5-V threshold voltage ensures reliable turn-on with standard logic-level drivers, and its low Q_gd prevents Miller-induced false turn-on during high dv/dt transitions in CSD16401Q5T-based designs.

How does the VSON-CLIP package of CSD16401Q5T improve thermal performance over standard QFN?

The VSON-CLIP (DQH) package used in CSD16401Q5T replaces wire bonds with copper clips connecting the die source directly to the thermal pad and pins 6–8. This reduces source inductance by >50% and lowers R_θJC to 0.8°C/W-nearly half that of conventional QFN packages. As a result, CSD16401Q5T achieves significantly better power dissipation and transient thermal response in high-current, high-frequency applications.

Is CSD16401Q5T suitable for avalanche-prone circuits like motor drives or inductive loads?

Yes, the CSD16401Q5T is explicitly avalanche rated with E_AS = 500 mJ (ID = 100 A, L = 0.1 mH, R_G = 25 Ω), enabling safe operation in unclamped inductive switching events. While optimized for POL converters, this rating makes CSD16401Q5T viable in auxiliary power stages, solenoid drivers, and other circuits where controlled avalanche behavior is required-provided layout and gate drive meet TI's recommended practices.

What is the recommended PCB layout for the thermal pad of CSD16401Q5T?

Texas Instruments specifies that the exposed thermal pad (Pin 9) of CSD16401Q5T must be soldered to a minimum 1-in² (6.45 cm²) area of 2-oz copper on the PCB to achieve R_θJA = 50°C/W. The datasheet recommends a solder mask defined land pattern with 71% paste coverage, optional thermal vias (≥9×0.28-mm diameter), and alignment to quadrant Q1 per tape-and-reel orientation. Proper thermal pad implementation is essential to realize the full 0.8°C/W R_θJC benefit of CSD16401Q5T.