Texas Instruments CSD16407Q5

Overview

CSD16407Q5 from Texas Instruments is an N-channel NexFET™ power MOSFET in a VSON-CLIP (DQH) 8-pin package, rated for 25 V V_DS, 1.8 mΩ R_DS(on) at V_GS = 10 V and 25 A, and optimized for high-efficiency synchronous buck converters in networking and telecom point-of-load applications.

For engineers reviewing the CSD16407Q5 datasheet, CSD16407Q5 pinout, CSD16407Q5 application, or CSD16407Q5 equivalent, key selection criteria include ultralow gate charge (13.3 nC), avalanche rating (218 mJ), thermal resistance (1.1 °C/W junction-to-case), and SON 5 mm × 6 mm footprint compatibility with high-current PCB layouts.

Technical Context

The CSD16407Q5 employs a silicon-based trench-gate process to achieve ultralow Q_g (13.3 nC) and Q_gd (3.5 nC), enabling fast switching with minimal drive loss in high-frequency synchronous FET roles. Its low R_DS(on) (1.8 mΩ @ 10 V) and high pulsed drain current (200 A) support high-efficiency power stages up to 1 MHz.

Thermal design is enabled by a copper-clip VSON package delivering R_θJC = 1.1 °C/W and R_θJA = 51 °C/W on standard FR4, while its 1.6 V gate threshold and 0.8 V body diode forward voltage (at 25 A) reduce conduction loss in bidirectional current paths.

Key Specifications

Pinout & Package

VSON-CLIP (DQH) 8-pin package with exposed thermal pad (bottom side); 5 mm × 6 mm footprint; MSL Level-1, 260 °C reflow compatible; RoHS exempt.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF6642TRPBF and SiR872DP-T1-GE3, the CSD16407Q5 delivers superior thermal performance (1.1 °C/W vs ≥1.5 °C/W) and lowest Q_gd among alternatives, making it optimal for high-current, high-frequency synchronous buck stages where thermal headroom and switching fidelity are critical.

Availability

CSD16407Q5 is available at Aetrix Electronics and suitable for networking point-of-load converters, telecom DC-DC modules, and computing VRM power stages requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for CSD16407Q5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management ICs, with decades of leadership in high-efficiency power conversion solutions.

The CSD16407Q5 belongs to TI's NexFET™ power MOSFET product line, designed specifically for high-frequency, high-current synchronous rectification in point-of-load and intermediate bus applications where low Q_g, low R_DS(on), and robust avalanche capability are essential.

FAQ

What is the maximum continuous drain current for CSD16407Q5 at 125°C case temperature?

The CSD16407Q5 supports 31 A continuous drain current at T_C = 25°C, derating linearly to approximately 18 A at T_C = 125°C per the absolute maximum ratings table. This reflects thermal limits of the VSON-CLIP package and must be validated against actual board-level thermal resistance in the target application.

Does CSD16407Q5 have a specified avalanche energy rating, and how is it tested?

Yes, the CSD16407Q5 is avalanche rated at 218 mJ (single pulse), measured under conditions of I_D = 66 A, L = 0.1 mH, and R_G = 25 Ω. This rating confirms ruggedness during unclamped inductive switching events common in synchronous buck freewheeling phases.

What is the gate threshold voltage range for CSD16407Q5, and how does it affect 3.3 V gate drive compatibility?

The CSD16407Q5 has a V_GS(th) range of 1.3 V to 1.9 V (min/typ/max), with typical value 1.6 V. At V_GS = 3.3 V, the device achieves full enhancement with R_DS(on) near specification, making it fully compatible with standard 3.3 V logic-level gate drivers without level shifting.

How does the thermal resistance of CSD16407Q5 compare between junction-to-case and junction-to-ambient?

The CSD16407Q5 has R_θJC = 1.1 °C/W (junction-to-case) and R_θJA = 51 °C/W (junction-to-ambient on 1 in² 2-oz Cu FR4). The large difference highlights the necessity of direct thermal path design - the case-to-PCB interface dominates total thermal resistance, not the die-to-case interface.

Is CSD16407Q5 suitable for use as a high-side switch, and what are the gate drive requirements?

The CSD16407Q5 is an N-channel MOSFET optimized as a low-side or synchronous rectifier switch. As a high-side switch, it requires a gate drive voltage ≥ V_DS + V_GS(th); for 12 V input, this demands ≥14 V gate bias. While electrically possible, its NexFET™ design and pinout favor low-side placement in buck topologies.