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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Texas Instruments CSD16408Q5

Name: CSD16408Q5
Brand: Texas Instruments
SKU: CSD16408Q5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CSD16408Q5

Manufacturer:: Texas Instruments

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: CSD16408Q5.pdf

Description:: MOSFET N-CH 25V 22A/113A 8VSON

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Product details

Overview

CSD16408Q5 from Texas Instruments is an N-channel NexFET™ power MOSFET optimized as a control FET in high-frequency synchronous buck converters for networking, telecom, and computing point-of-load applications. It features 25-V V_DS, 3.6-mΩ r_DS(on) at 10 V_GS, 6.7-nC total gate charge, ultralow Q_gd (1.9 nC), and avalanche-rated operation.

For engineers reviewing the CSD16408Q5 datasheet, CSD16408Q5 pinout, CSD16408Q5 application, or CSD16408Q5 equivalent, key selection criteria include low gate charge for fast switching, thermal resistance optimization via exposed thermal pad, and verified performance in 4.5-V gate drive control-FET topologies with tight timing constraints.

Technical Context

This device uses a silicon-based planar trench-gate structure optimized for minimal switching losses in hard-switched DC-DC converters. Its low Q_gd/Q_g ratio (28%) reduces Miller-induced turn-on delay and improves controllability under high di/dt conditions.

The VSON-CLIP (DQH) package integrates a copper-clip drain connection and thermally enhanced exposed pad, enabling R_θJC = 1.9°C/W and supporting continuous 113-A drain current at T_C = 25°C - critical for compact, high-current POL modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12-V input bus systems and 5-V/3.3-V output rails.
r_DS(on) @ 10 V_GS	3.6 mΩ - Enables <1.5-W conduction loss at 20-A DC load in control-FET position of 500-kHz buck converter.
Q_g (4.5 V)	6.7 nC - Reduces gate driver power consumption and allows use of low-power drivers like TI UCC27517 in space-constrained designs.
Q_gd	1.9 nC - Minimizes Miller plateau duration, improving duty-cycle fidelity and reducing shoot-through risk in synchronous rectification.
R_θJC	1.9°C/W - Supports direct thermal coupling to heatsink or PCB copper plane, enabling >85% efficiency at 40-A load in 12 mm × 12 mm POL footprint.
Avalanche Energy (E_AS)	126 mJ - Withstands unclamped inductive switching events during startup/fault without failure, enhancing system robustness.
V_GS(th)	1.8 V (typ) - Ensures reliable turn-on with 3.3-V logic-level gate drivers while maintaining noise immunity above 1.4 V min.

Pinout & Package

VSON-CLIP (DQH) 8-pin plastic package with exposed thermal pad (5 mm × 6 mm footprint, max height 1.05 mm); requires soldering of thermal pad to PCB for rated thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (internally paralleled)	High-current power path; connected directly to clip-over-molded copper leadframe for low-inductance, low-resistance conduction.
6	Gate	Control terminal; low capacitance (CISS = 1300 pF typ) enables fast edge rates with minimal driver effort.
7, 8, 9 (thermal pad)	Source	Power return and thermal interface; pad must be soldered to ≥1-in² 2-oz Cu for R_θJA ≤ 51°C/W compliance.

Key Features

Feature	Design Value
Ultralow Q_g and Q_gd	6.7-nC total / 1.9-nC Miller charge enables >1-MHz switching in control-FET role with <10-ns propagation delay.
Low thermal resistance	R_θJC = 1.9°C/W supports 113-A continuous drain current at case temperature ≤25°C without forced airflow.
Avalanche rated	126-mJ single-pulse E_AS eliminates need for external snubbers in non-isolated buck converters during transient overloads.
SON 5-mm × 6-mm plastic package	Surface-mount VSON-CLIP (DQH) with copper-clip drain delivers 40% lower package inductance vs. standard QFN for reduced voltage overshoot.

Applications

Networking Point-of-Load	Telecom Baseband Power
Use Scenario: 12-V input to 1.0-V/60-A output conversion in 1U rack-mounted switch line cards. IC Role / Device Role / Timing Role: Control FET in high-side position of two-phase interleaved synchronous buck regulator. Use Value: Low Q_gd ensures precise dead-time control and <50-ns minimum on-time capability at 800-kHz switching frequency.	Use Scenario: Distributed 3.3-V rail generation for FPGA I/O banks and SerDes transceivers in macrocell base stations. IC Role / Device Role / Timing Role: Primary control switch in multiphase VR13-compliant CPU core supply. Use Value: 3.6-mΩ r_DS(on) at 10 V_GS limits conduction loss to <0.4 W per phase at 25-A RMS, enabling >92% peak efficiency.
Server Memory Regulator	AI Accelerator Core Supply
Use Scenario: DDR5 memory channel regulation delivering 1.1-V/40-A with <±10-mV load regulation. IC Role / Device Role / Timing Role: High-side switch in adaptive on-time buck controller with 500-kHz–1.2-MHz variable frequency. Use Value: Fast turn-on (t_d(on) = 11.3 ns) and rise time (25 ns) maintain loop stability across wide load transients up to 100 A/μs.	Use Scenario: 0.8-V/120-A core supply for edge AI inference accelerators operating at 2-GHz clock speeds. IC Role / Device Role / Timing Role: Control FET in 3-phase, 1-MHz synchronous buck with digital PWM controller (e.g., TI TPS546D24). Use Value: Avalanche rating and low R_θJC allow safe operation during rapid load dumps and thermal cycling in fanless enclosures.

Networking Point-of-Load

Telecom Baseband Power

Use Scenario: 12-V input to 1.0-V/60-A output conversion in 1U rack-mounted switch line cards.

IC Role / Device Role / Timing Role: Control FET in high-side position of two-phase interleaved synchronous buck regulator.

Use Value: Low Q_gd ensures precise dead-time control and <50-ns minimum on-time capability at 800-kHz switching frequency.

Use Scenario: Distributed 3.3-V rail generation for FPGA I/O banks and SerDes transceivers in macrocell base stations.

IC Role / Device Role / Timing Role: Primary control switch in multiphase VR13-compliant CPU core supply.

Use Value: 3.6-mΩ r_DS(on) at 10 V_GS limits conduction loss to <0.4 W per phase at 25-A RMS, enabling >92% peak efficiency.

Server Memory Regulator

AI Accelerator Core Supply

Use Scenario: DDR5 memory channel regulation delivering 1.1-V/40-A with <±10-mV load regulation.

IC Role / Device Role / Timing Role: High-side switch in adaptive on-time buck controller with 500-kHz–1.2-MHz variable frequency.

Use Value: Fast turn-on (t_d(on) = 11.3 ns) and rise time (25 ns) maintain loop stability across wide load transients up to 100 A/μs.

Use Scenario: 0.8-V/120-A core supply for edge AI inference accelerators operating at 2-GHz clock speeds.

IC Role / Device Role / Timing Role: Control FET in 3-phase, 1-MHz synchronous buck with digital PWM controller (e.g., TI TPS546D24).

Use Value: Avalanche rating and low R_θJC allow safe operation during rapid load dumps and thermal cycling in fanless enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel control-FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CSD16321Q5	Higher r_DS(on) (4.8 mΩ @ 10 V_GS), higher Q_g (9.2 nC), same VSON-CLIP package.	Suitable for lower-current (<30-A) POL where thermal margin is less constrained.	Select when cost sensitivity outweighs efficiency targets and layout space permits slightly larger thermal pad area.
IRF6642	Different package (DirectFET MXv), higher Q_gd (3.2 nC), no official avalanche rating.	Used in legacy telecom designs; lacks TI's integrated thermal pad design and E_AS validation.	Consider only for drop-in replacement in existing IRF6642 layouts; not recommended for new designs requiring avalanche robustness.

Compared with CSD16408Q5, CSD16321Q5 trades 33% higher conduction loss for lower unit cost, while IRF6642 offers comparable R_θJA but lacks documented avalanche capability and has inferior gate charge profile for high-frequency control-FET use.

Availability

CSD16408Q5 is available at Aetrix Electronics and suitable for networking point-of-load regulators, telecom baseband power supplies, and AI accelerator core supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for CSD16408Q5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.

The NexFET™ power MOSFET product line was developed specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and computing infrastructure - emphasizing low Q_g, low R_DS(on), and robust thermal packaging.

FAQ

What is the maximum continuous drain current rating for CSD16408Q5 at 25°C case temperature?

The CSD16408Q5 supports 113 A continuous drain current when mounted with proper thermal management at T_C = 25°C. This rating assumes full soldering of the exposed thermal pad to ≥1-in² 2-oz copper on FR4 PCB. At ambient temperature (T_A = 25°C), derated current is 22 A due to higher junction-to-ambient thermal resistance (R_θJA = 51°C/W).

Does CSD16408Q5 support 3.3-V gate drive in control-FET applications?

Yes, the CSD16408Q5 is fully specified for 4.5-V gate drive and exhibits r_DS(on) = 5.4 mΩ at V_GS = 4.5 V, making it compatible with 3.3-V logic-level drivers when used with gate boosters or level-shifted drive schemes. Its 1.8-V threshold voltage ensures strong enhancement-mode behavior with adequate noise margin at 3.3-V operation.

What is the recommended PCB layout for the thermal pad of CSD16408Q5?

The CSD16408Q5 thermal pad (Pin 9) must be soldered to a minimum 1-inch² (6.45-cm²) area of 2-oz copper on the PCB to achieve the rated R_θJA = 51°C/W. TI recommends using 9 vias (1.14-mm diameter) connecting the pad to inner-layer ground planes, and a stencil aperture providing 71% solder paste coverage to ensure void-free solder joint formation and optimal thermal transfer.

Is CSD16408Q5 qualified for automotive applications?

No, the CSD16408Q5 is not AEC-Q101 qualified and is intended for industrial, computing, and telecom applications only. Its operating temperature range (–55°C to 150°C) overlaps with automotive requirements, but TI does not certify or guarantee its use in automotive safety-critical systems. For automotive-grade alternatives, consult TI's AEC-Q101-qualified NexFET™ portfolio such as CSD17573Q5.

How does the avalanche rating of CSD16408Q5 improve system reliability?

The CSD16408Q5 is tested and rated for 126 mJ single-pulse avalanche energy (E_AS) under defined conditions (I_D = 23 A, L = 0.1 mH, R_G = 25 Ω). This specification validates its ability to safely absorb inductive energy during abnormal events like output short-circuits or controller faults - eliminating reliance on external clamping circuits and improving field failure resilience in unregulated POL environments.

CSD16408Q5 Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: NexFET™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 113A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.9 nC @ 4.5 V

Vgs (Max):: +16V, -12V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 12.5 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-VSONP (5x6)

CSD16408Q5 FAQ

1.How can I place an order for CSD16408Q5 through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD16408Q5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD16408Q5 reliable?

The price and inventory of CSD16408Q5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD16408Q5 is usually 5 days.

3.What payment methods are accepted for CSD16408Q5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD16408Q5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CSD16408Q5?

CSD16408Q5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD16408Q5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD16408Q5?

For technical support, including CSD16408Q5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD16408Q5 requirements.

6.How does Aetrix verify that CSD16408Q5 is sourced from the original manufacturer or authorized distributors?

All CSD16408Q5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD16408Q5 meets industry standards.

7.What is the process for return or replacement of CSD16408Q5?

All CSD16408Q5 units undergo pre-shipment inspection (PSI). If there is an issue with CSD16408Q5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD16408Q5 part is unused and in its original packaging.

Return procedure for CSD16408Q5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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