Texas Instruments CSD16409Q3

Overview

CSD16409Q3 from Texas Instruments is an N-channel NexFET™ power MOSFET in a VSON-CLIP (DQG) 8-pin package, rated for 25 V drain-to-source voltage, 6.2 mΩ R_DS(on) at V_GS = 10 V and 17 A, and optimized as a control FET in high-frequency synchronous buck converters for networking and telecom point-of-load applications.

For engineers reviewing the CSD16409Q3 datasheet, CSD16409Q3 pinout, CSD16409Q3 application, or CSD16409Q3 equivalent, key selection criteria include ultra-low gate charge (4 nC total), low thermal resistance (3.5 °C/W junction-to-case), avalanche rating (72 mJ), and SON 3.3 mm × 3.3 mm footprint compatibility with tight-layout DC/DC designs.

Technical Context

This device employs a silicon-based trench-gate process to achieve ultra-low Q_g (4 nC) and Q_gd (1 nC), enabling fast switching with minimal drive loss in 500 kHz–1 MHz synchronous buck topologies. Its R_DS(on) remains stable across –55°C to 150°C junction temperature, supported by normalized on-resistance variation ≤1.8× over that range.

The CSD16409Q3 integrates a body diode with 0.85 V forward voltage at 17 A and 13.8 nC reverse recovery charge, allowing efficient freewheeling in hard-switched configurations. Its 600 pF input capacitance and 480 pF output capacitance are characterized at V_GS = 0 V and V_DS = 12.5 V, f = 1 MHz.

Key Specifications

Pinout & Package

VSON-CLIP (DQG) 8-pin plastic package with exposed thermal pad (top view: pins 1–4 left side, 5–8 right side; bottom view: DRAIN terminals on pins 1, 2, 3, 4 and 5, 6, 7, 8; GATE on pin 1; SOURCE on pins 3, 4, 5, 6, 7, 8). Dimensions: 3.3 mm × 3.3 mm × 0.95–1.10 mm height; MSL Level-1, 260°C reflow compatible.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BSC010N04LS and SiR872DP, the CSD16409Q3 delivers superior high-frequency efficiency due to its 4 nC Q_g and 3.3 mm × 3.3 mm thermal package-enabling smaller magnetics, reduced EMI filtering, and higher power density in 500 kHz–1 MHz POL converters where gate drive loss dominates.

Availability

CSD16409Q3 is available at Aetrix Electronics and suitable for networking point-of-load converters, telecom base station power supplies, and computing VRM applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for CSD16409Q3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and communications markets since 1930.

The NexFET™ power MOSFET product line was developed specifically for high-efficiency, high-frequency DC/DC conversion in space-constrained infrastructure equipment-emphasizing ultra-low gate charge, low R_DS(on), and robust thermal packaging.

FAQ

What is the maximum continuous drain current rating for the CSD16409Q3 at 25°C case temperature?

The CSD16409Q3 supports 60 A continuous drain current at T_C = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes adequate heatsinking to maintain case temperature at 25°C; at higher case temperatures or ambient conditions, derating applies per the R_θJA = 59 °C/W curve and Figure 12 in the SLPS204A datasheet. The CSD16409Q3 achieves this high current capability through its multi-terminal drain and source configuration in the VSON-CLIP package.

Does the CSD16409Q3 have integrated ESD protection, and what handling precautions apply?

The CSD16409Q3 has limited built-in ESD protection; TI explicitly warns that its MOS gates are electrostatic-sensitive. During storage or handling, leads must be shorted together or the device placed in conductive foam to prevent damage. This requirement applies to all CSD16409Q3 units regardless of packaging format, and no external ESD protection circuitry is integrated into the die. The CSD16409Q3 datasheet confirms this in its "Important Notice" section on page 2.

What is the gate threshold voltage range for the CSD16409Q3, and how does it affect drive compatibility?

The CSD16409Q3 has a gate threshold voltage (V_GS(th)) range of 1.7 V to 2.3 V at I_D = 250 µA, making it fully compatible with standard 3.3 V and 5 V logic-level gate drivers. This low threshold ensures strong enhancement at 4.5 V (where R_DS(on) = 9.5 mΩ), and full saturation at 10 V (R_DS(on) = 6.2 mΩ). The CSD16409Q3's V_GS(th) stability across temperature is confirmed in Figure 6 of the SLPS204A datasheet.

Can the CSD16409Q3 be used as a synchronous rectifier, or is it strictly a control FET?

The CSD16409Q3 is optimized as a control (high-side) FET in synchronous buck converters, not as a synchronous rectifier. Its body diode characteristics-0.85 V forward voltage at 17 A and 13.8 nC Q_rr-are adequate for freewheeling but not competitive with dedicated low-V_F sync rectifiers. The CSD16409Q3 datasheet explicitly states it is "optimized for Control FET Applications" in the Applications section, and its low Q_gd/Q_g ratio prioritizes fast turn-off over reverse recovery performance.

What is the thermal resistance from junction to ambient for the CSD16409Q3 on a standard PCB layout?

The CSD16409Q3 has a typical R_θJA of 59 °C/W when mounted on a 1 in² (6.45 cm²) 2 oz. copper pad on 0.060″ FR4 PCB, as defined in the Thermal Characteristics table. This value assumes minimum recommended land pattern per SLPA005 application note. With enhanced copper area or thermal vias, R_θJA can drop to ~30 °C/W; however, the CSD16409Q3's R_θJC of 3.5 °C/W remains fixed and governs heat transfer to external heatsinks.