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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Texas Instruments CSD16413Q5A

Name: CSD16413Q5A
Brand: Texas Instruments
SKU: CSD16413Q5A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CSD16413Q5A

Manufacturer:: Texas Instruments

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: CSD16413Q5A.pdf

Description:: MOSFET N-CH 25V 24A/100A 8VSON

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Product details

Overview

CSD16413Q5A from Texas Instruments is an N-channel NexFET™ power MOSFET in a 5 mm × 6 mm SON package, rated for 25 V V_DS, 3.1 mΩ R_DS(on) at V_GS = 10 V and 24 A continuous drain current at T_C = 25°C, optimized for high-efficiency synchronous buck converters in networking and telecom point-of-load applications.

For engineers reviewing the CSD16413Q5A datasheet, CSD16413Q5A pinout, CSD16413Q5A application, or CSD16413Q5A equivalent, key selection criteria include ultra-low gate charge (9 nC total), low thermal resistance (2.6°C/W junction-to-case), avalanche rating (106 mJ), and SON-8 package compatibility with high-density PCB layouts.

Technical Context

This device uses a silicon-based trench-gate process to achieve ultra-low Q_g (9 nC) and Q_gd (2.5 nC), enabling fast switching with minimal drive loss in high-frequency DC/DC converters. Its R_DS(on) remains stable across temperature (1.4× increase from 25°C to 125°C), supporting reliable operation in thermally constrained environments.

The integrated body diode exhibits low reverse recovery charge (32 nC) and time (28 ns) under 300 A/μs di/dt, reducing shoot-through risk and conduction loss in synchronous rectification. Thermal design is supported by a low R_θJC of 2.6°C/W and defined PCB pad requirements (1 in² 2 oz. Cu) for R_θJA = 51°C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input rail systems with margin
R_DS(on) @ V_GS = 10 V	3.1 mΩ - Enables <1 W conduction loss at 24 A in high-current POL stages
Q_g (total)	9 nC - Reduces gate driver power demand and enables >1 MHz switching
V_GS(th)	1.6 V (typ) - Ensures robust turn-on with standard 3.3 V or 4.5 V logic-level drivers
E_AS	106 mJ - Withstands unclamped inductive switching events without failure
R_θJC	2.6°C/W - Allows direct heatsinking via exposed die pad for thermal management
I_D (continuous, T_C = 25°C)	100 A - Supports high peak current capability beyond steady-state ratings

Pinout & Package

Package: SON-8 (VSONP/DQJ), 5 mm × 6 mm, exposed thermal pad, RoHS-compliant Sn lead finish, MSL Level-1 (260°C reflow).

Pin/Terminal	Circuit Role	Design Meaning
1–3, 7–8	Source	Common source connection; pins tied internally and to exposed thermal pad for low-inductance return path
4–6	Drain	Main power output node; connected to internal FET die drain and exposed pad for heat dissipation
5	Gate	Control terminal; requires low-impedance drive due to 9 nC Q_g and 0.9 Ω R_g

Key Features

Feature	Design Value
Ultra-low Q_g and Q_gd	9 nC total / 2.5 nC gate-to-drain charge minimizes switching loss and EMI in high-frequency converters
Low R_θJC	2.6°C/W enables direct thermal coupling to heatsink or PCB copper, critical for compact POL designs
Avalanche-rated	106 mJ single-pulse energy rating supports robustness against transient overvoltage in buck converter freewheeling
Optimized body diode	32 nC Q_rr and 28 ns t_rr reduce reverse recovery loss and improve synchronous FET efficiency
SON 5 mm × 6 mm package	Standardized footprint with exposed pad allows automated assembly and high-power density layout

Applications

Point-of-Load Synchronous Buck Converter	Telecom Base Station Power Supply
Use Scenario: High-current, high-efficiency DC/DC conversion delivering 1–3 V at up to 50 A from 12 V intermediate bus in server VRMs. IC Role / Device Role / Timing Role: Synchronous rectifier FET in dual-MOSFET buck stage, operating at 500 kHz–1 MHz with 4.5 V gate drive. Use Value: 3.1 mΩ R_DS(on) and 9 nC Q_g reduce conduction and switching losses, improving full-load efficiency by ≥1.2% versus comparable 3.8 mΩ devices.	Use Scenario: Intermediate bus converter (IBC) in 48 V telecom systems powering distributed digital signal processors and FPGAs. IC Role / Device Role / Timing Role: Control FET in primary-side synchronous rectification, handling 24 A continuous current with tight thermal constraints. Use Value: 2.6°C/W R_θJC and 100 A peak current rating allow sustained operation at 85°C ambient without derating in sealed chassis.
Networking Switch ASIC Power Rail	Industrial PLC I/O Module Supply
Use Scenario: Multi-phase POL regulator supplying core voltage to high-speed Ethernet switch ASICs with dynamic load steps >20 A/μs. IC Role / Device Role / Timing Role: Low-side synchronous FET, leveraging fast 15.9 ns rise time and 5.7 ns fall time for precise dead-time control. Use Value: 2.5 nC Q_gd limits Miller-induced shoot-through risk during hard switching, improving system reliability under transient loads.	Use Scenario: Isolated 24 V to 3.3 V/5 V supply for programmable logic controller I/O modules requiring long-term stability and surge immunity. IC Role / Device Role / Timing Role: Primary-side switching FET in flyback or active-clamp forward topology, rated for repetitive avalanche stress. Use Value: 106 mJ E_AS withstands 100 V/10 μs surges per IEC 61000-4-5, eliminating need for external clamping in cost-sensitive industrial designs.

Point-of-Load Synchronous Buck Converter

Telecom Base Station Power Supply

Use Scenario: High-current, high-efficiency DC/DC conversion delivering 1–3 V at up to 50 A from 12 V intermediate bus in server VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in dual-MOSFET buck stage, operating at 500 kHz–1 MHz with 4.5 V gate drive.

Use Value: 3.1 mΩ R_DS(on) and 9 nC Q_g reduce conduction and switching losses, improving full-load efficiency by ≥1.2% versus comparable 3.8 mΩ devices.

Use Scenario: Intermediate bus converter (IBC) in 48 V telecom systems powering distributed digital signal processors and FPGAs.

IC Role / Device Role / Timing Role: Control FET in primary-side synchronous rectification, handling 24 A continuous current with tight thermal constraints.

Use Value: 2.6°C/W R_θJC and 100 A peak current rating allow sustained operation at 85°C ambient without derating in sealed chassis.

Networking Switch ASIC Power Rail

Industrial PLC I/O Module Supply

Use Scenario: Multi-phase POL regulator supplying core voltage to high-speed Ethernet switch ASICs with dynamic load steps >20 A/μs.

IC Role / Device Role / Timing Role: Low-side synchronous FET, leveraging fast 15.9 ns rise time and 5.7 ns fall time for precise dead-time control.

Use Value: 2.5 nC Q_gd limits Miller-induced shoot-through risk during hard switching, improving system reliability under transient loads.

Use Scenario: Isolated 24 V to 3.3 V/5 V supply for programmable logic controller I/O modules requiring long-term stability and surge immunity.

IC Role / Device Role / Timing Role: Primary-side switching FET in flyback or active-clamp forward topology, rated for repetitive avalanche stress.

Use Value: 106 mJ E_AS withstands 100 V/10 μs surges per IEC 61000-4-5, eliminating need for external clamping in cost-sensitive industrial designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CSD16321Q5	25 V, 3.2 mΩ R_DS(on), 8.7 nC Q_g, same SON-8 package	Slightly lower gate charge but higher R_DS(on); optimized for lower V_GS drive	Prefer when gate drive voltage is limited to 4.5 V and R_DS(on) tolerance >3.2 mΩ is acceptable
IRF6642	25 V, 3.0 mΩ R_DS(on), 10.2 nC Q_g, PQFN 5×6 mm package	Higher Q_g increases driver loss; identical thermal performance and avalanche rating	Choose if legacy IR design reuse is required and 1.2 nC extra Q_g is compensated by existing gate driver headroom

Compared with CSD16413Q5A, CSD16321Q5 offers marginally better switching efficiency at 4.5 V drive but sacrifices conduction loss, while IRF6642 matches R_DS(on) closely but demands more gate drive power-making CSD16413Q5A optimal for balanced high-frequency, high-current POL designs.

Availability

CSD16413Q5A is available at Aetrix Electronics and suitable for point-of-load synchronous buck converters, telecom base station power supplies, and industrial PLC I/O module supplies requiring stable component supply and long-term manufacturability.

Supply support for CSD16413Q5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with leadership in high-efficiency power conversion solutions.

The NexFET™ power MOSFET product line targets high-frequency, high-current DC/DC applications where low Q_g, low R_DS(on), and thermal performance are critical-specifically for next-generation computing, networking, and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for CSD16413Q5A at 125°C case temperature?

The CSD16413Q5A has a continuous drain current rating of 24 A at T_C = 125°C, as specified in the Absolute Maximum Ratings table. This reflects derating from its 100 A rating at 25°C case temperature, based on thermal limits and R_DS(on) increase with junction temperature. The CSD16413Q5A maintains stable performance across this range due to its low R_θJC of 2.6°C/W and defined SOA curve.

Does CSD16413Q5A support 3.3 V gate drive in logic-level applications?

Yes, the CSD16413Q5A has a typical V_GS(th) of 1.6 V and delivers 4.1 mΩ R_DS(on) at V_GS = 4.5 V, making it compatible with 3.3 V logic-level gate drivers when operated in enhanced mode with sufficient gate overdrive margin. However, full 3.1 mΩ performance requires 10 V drive; the CSD16413Q5A datasheet confirms usable conduction at 4.5 V but specifies 10 V for minimum R_DS(on).

What is the thermal resistance from junction to ambient (R_θJA) for CSD16413Q5A on a standard PCB?

The CSD16413Q5A has a typical R_θJA of 51°C/W when mounted on a 1 in² pad of 2 oz. copper on FR4 PCB, as defined in the Thermal Characteristics section. This value assumes specific board layout conditions; actual R_θJA varies with copper area and layer count. The CSD16413Q5A's low R_θJC of 2.6°C/W enables further thermal improvement via heatsinking the exposed pad.

Is CSD16413Q5A suitable for avalanche operation in unclamped inductive switching?

Yes, the CSD16413Q5A is explicitly avalanche-rated with E_AS = 106 mJ (single pulse, I_D = 46 A, L = 0.1 mH, R_G = 25 Ω), as confirmed in the Absolute Maximum Ratings table. This makes the CSD16413Q5A appropriate for circuits subject to inductive energy dump, such as synchronous buck freewheeling or relay driving-provided layout minimizes stray inductance and thermal limits are observed.

What package type and pin count does CSD16413Q5A use, and is it RoHS-compliant?

The CSD16413Q5A uses the SON-8 (VSONP/DQJ) package, measuring 5 mm × 6 mm with an exposed thermal pad and 8 terminals. It is RoHS-exempt per TI's packaging documentation, with Sn (tin) lead finish and MSL Level-1 rating for 260°C reflow. The CSD16413Q5A complies with JEDEC standards for moisture sensitivity and Pb-free assembly processes.

CSD16413Q5A Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: NexFET™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.7 nC @ 4.5 V

Vgs (Max):: +16V, -12V

Input Capacitance (Ciss) (Max) @ Vds:: 1780 pF @ 12.5 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-VSONP (5x6)

CSD16413Q5A FAQ

1.How can I place an order for CSD16413Q5A through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD16413Q5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD16413Q5A reliable?

The price and inventory of CSD16413Q5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD16413Q5A is usually 5 days.

3.What payment methods are accepted for CSD16413Q5A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD16413Q5A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CSD16413Q5A?

CSD16413Q5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD16413Q5A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD16413Q5A?

For technical support, including CSD16413Q5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD16413Q5A requirements.

6.How does Aetrix verify that CSD16413Q5A is sourced from the original manufacturer or authorized distributors?

All CSD16413Q5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD16413Q5A meets industry standards.

7.What is the process for return or replacement of CSD16413Q5A?

All CSD16413Q5A units undergo pre-shipment inspection (PSI). If there is an issue with CSD16413Q5A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD16413Q5A part is unused and in its original packaging.

Return procedure for CSD16413Q5A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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