Texas Instruments CSD16414Q5

Overview

CSD16414Q5 from Texas Instruments is an N-channel NexFET™ power MOSFET in a VSON-CLIP (DQH) 8-pin package, optimized for synchronous buck converter high-side and low-side switching. It delivers R_DS(on) = 1.5 mΩ at V_GS = 10 V and 30 A, supports 25 V drain-to-source voltage, and features ultra-low gate charge (Q_g = 16.6 nC) for high-efficiency point-of-load conversion in telecom and computing systems.

For engineers reviewing the CSD16414Q5 datasheet, CSD16414Q5 pinout, CSD16414Q5 application, or CSD16414Q5 equivalent, key selection criteria include its 1.5 mΩ on-resistance at 10 V drive, 25 V V_DS rating, avalanche energy rating (E_AS = 500 mJ), thermal resistance (R_θJC = 1.1 °C/W), and SON 5 mm × 6 mm package compatibility with high-density PCB layouts.

Technical Context

The CSD16414Q5 employs a silicon-based trench-gate process to achieve low R_DS(on) and minimized gate-drain charge (Q_gd = 4.4 nC), enabling fast switching with reduced Miller-induced turn-off delay. Its low output capacitance (C_OSS = 2040–2650 pF) and reverse transfer capacitance (C_RSS = 140–180 pF) support high-frequency operation up to 1 MHz in synchronous rectification topologies.

Designed specifically for synchronous FET applications, it integrates a robust body diode with Q_rr = 44 nC and t_rr = 35 ns, enabling efficient freewheeling without external Schottky supplementation. Thermal performance is enhanced by direct copper clip construction, delivering R_θJC = 1.1 °C/W and supporting continuous 34 A drain current at T_C = 25°C.

Key Specifications

Pinout & Package

VSON-CLIP (DQH) 8-pin plastic package with exposed thermal pad (5.0 mm × 6.0 mm footprint, 1.0 mm height); bottom-side thermal pad enhances heat transfer to PCB copper plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with CSD16414Q5, the BSC014N04LS6 offers higher voltage rating but increased gate charge, while the SiR626DP matches pinout and thermal behavior with marginal R_DS(on) trade-off - making it the only true mechanical and thermal drop-in option among alternatives.

Availability

CSD16414Q5 is available at Aetrix Electronics and suitable for point-of-load synchronous buck converters, server VRM output stages, and telecom DC/DC modules requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for CSD16414Q5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.

The CSD16414Q5 belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous buck conversion in networking, telecom, and computing infrastructure.

FAQ

What is the maximum continuous drain current rating for CSD16414Q5 at 25°C case temperature?

The CSD16414Q5 supports a continuous drain current (I_D) of 34 A at T_C = 25°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper thermal management via the exposed drain pad and sufficient PCB copper area. At higher case temperatures, current must be derated per the I_D vs. T_C curve in Figure 12 of the CSD16414Q5 datasheet.

Does CSD16414Q5 support 4.5 V gate drive in practical applications?

Yes, the CSD16414Q5 is fully characterized for 4.5 V gate drive: its R_DS(on) is specified at 2.1 mΩ (typical) under V_GS = 4.5 V and I_D = 30 A. This makes the CSD16414Q5 suitable for 5 V logic-level gate drivers and controller ICs with 4.5 V output capability, especially in space-constrained POL designs where lower gate voltage simplifies driver selection.

What is the thermal resistance from junction to case (R_θJC) for CSD16414Q5, and how is it measured?

The CSD16414Q5 has a typical R_θJC of 1.1 °C/W, measured with the device mounted on a 1 inch², 2 oz. copper pad on FR4 PCB. This value reflects the thermal path from die junction to the exposed drain pad surface and is critical for heatsink or thermal pad design. The R_θJC is specified by TI's internal thermal modeling and validated per JEDEC JESD51-14 standards.

Is CSD16414Q5 rated for avalanche energy, and what is its single-pulse rating?

Yes, the CSD16414Q5 is avalanche-rated with a single-pulse avalanche energy (E_AS) of 500 mJ, tested under conditions of I_D = 100 A, L = 0.1 mH, and R_G = 25 Ω. This rating confirms ruggedness against inductive switching transients in non-synchronous or fault-mode operation, supporting reliable use in buck converters without additional clamping circuitry.

What package type and lead finish does CSD16414Q5 use, and is it RoHS compliant?

The CSD16414Q5 uses the VSON-CLIP (DQH) 8-pin package with SN (tin) lead finish and is RoHS-exempt per TI's packaging documentation. It meets MSL Level-1 (260°C peak reflow) and is compatible with standard Pb-free SMT assembly processes. The package marking "CSD16414" appears on the top surface, and the device is halogen-free and Pb-free terminal plated.