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Texas Instruments CSD16556Q5B
- Part No.:
- CSD16556Q5B
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
CSD16556Q5B.pdf
- Description:
- MOSFET N-CH 25V 100A 8VSON
- Quantity:
- Payment:
- Shipping:
Inventory:6,118
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Product details
Overview
CSD16556Q5B from Texas Instruments is a 25-V N-channel NexFET™ power MOSFET in an 8-pin VSON-CLIP (DNK) package, optimized for synchronous rectification in high-current DC/DC converters. It delivers 0.9 mΩ RDS(on) at VGS = 10 V and 30 A, supports 100-A continuous drain current (package-limited), and features ultralow gate charge (Qg = 36 nC) for high-efficiency point-of-load applications in telecom and computing systems.
For engineers reviewing the CSD16556Q5B datasheet, CSD16556Q5B pinout, CSD16556Q5B application, or CSD16556Q5B equivalent, key selection criteria include its 1.3°C/W junction-to-case thermal resistance, avalanche-rated construction (EAS = 530 mJ), SON 5 mm × 6 mm footprint compatibility with high-density PCB layouts, and verified performance under 125°C case temperature conditions.
Technical Context
This device employs a silicon-limited trench-gate process enabling sub-1-mΩ on-resistance while maintaining robust switching dynamics: Qgd/Qg ratio of 33% (12/36 nC) minimizes Miller-induced turn-off delay, and low output capacitance (Coss = 2270 pF typ) reduces switching losses in hard-switched topologies. Its transconductance of 191 S ensures stable gate drive control across temperature.
The CSD16556Q5B integrates a fast-recovery body diode (trr = 41 ns, Qrr = 84 nC) and operates within –55°C to 150°C junction range. Thermal design leverages direct copper clip construction-confirmed by RθJC = 1.3°C/W max-to enable high-power density without external heatsinking in properly designed 2-oz copper pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage compatible with 12-V and 24-V input bus architectures |
| RDS(on) @ VGS = 10 V | 0.9 mΩ - Enables <1.5 W conduction loss at 40 A, critical for >95% efficiency in POL converters |
| Qg | 36 nC - Reduces gate drive power requirement and allows use of lower-cost drivers in high-frequency (>1 MHz) designs |
| ID Continuous (Package) | 100 A - Supports high-current phases in multiphase VRMs without parallel devices |
| RθJC | 1.3°C/W - Allows direct thermal coupling to heatsink or PCB plane, simplifying thermal management |
| VGS(th) | 1.4 V typ - Ensures reliable enhancement-mode turn-on with standard 3.3-V or 5-V gate drivers |
| EAS | 530 mJ - Withstands unclamped inductive switching events in synchronous buck freewheeling paths |
Pinout & Package
Package: VSON-CLIP (DNK), 8-pin, 5 mm × 6 mm exposed-pad surface-mount package with copper clip source connection for low-inductance, high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Multiple parallel source terminals reduce package inductance and improve current sharing in high-di/dt operation |
| 5 | Gate (G) | Single low-impedance gate terminal optimized for fast edge rates and minimal ringing with 2-Ω external gate resistor |
| 6 | Drain (D) | Exposed drain paddle tied directly to PCB copper pour-primary thermal and current path for high-side switching node |
Key Features
| Feature | Design Value |
|---|---|
| Ultralow Qg and Qgd | 36 nC total / 12 nC gate-to-drain charge enables <34 ns rise time and tight dead-time control in synchronous FETs |
| Extremely low RDS(on) | 0.9 mΩ at 10 V drives conduction losses below 1.5 W at 40 A, reducing thermal stress in compact VRMs |
| Avalanche rated | 530 mJ single-pulse energy rating protects against inductive kickback during startup/fault in non-isolated DC/DC stages |
| Low thermal resistance | 1.3°C/W junction-to-case enables >100 W dissipation with ≤130°C case temperature on 1-in² 2-oz Cu pad |
| RoHS & halogen free | Complies with IPC-1752A material declaration requirements for industrial and telecom equipment compliance |
Applications
| Server VRM Phase Legs | Telecom 48-V Intermediate Bus Converters |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage in data center servers. IC Role / Device Role / Timing Role: Low-side synchronous FET handling 60–100 A per phase with 500 kHz–1 MHz switching. Use Value: 0.9 mΩ RDS(on) and 1.3°C/W RθJC minimize heat generation and allow dense phase interleaving without thermal derating. |
Use Scenario: 48-V to 12-V intermediate bus converter in 5G baseband units requiring high reliability and low EMI. IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched forward or active-clamp topology. Use Value: Avalanche rating and 25-V VDS withstand transient overvoltage spikes common in telecom power distribution networks. |
| Networking Switch ASIC Power Rails | AI Accelerator Board POL Modules |
Use Scenario: Point-of-load regulation for 12–24 Gbps SerDes lanes and packet processing ASICs in enterprise switches. IC Role / Device Role / Timing Role: Low-side FET in 300–600 kHz synchronous buck delivering 20–40 A at 0.8–1.2 V. Use Value: Ultralow Qg (36 nC) reduces gate drive losses and enables efficient operation with integrated controller gate drivers. |
Use Scenario: Compact, high-density 3.3-V or 5-V POL module powering GPU memory interfaces on AI training cards. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in dual-phase interleaved buck with <100 ns dead-time control. Use Value: Fast body diode (trr = 41 ns) and low Qrr (84 nC) suppress reverse recovery losses and voltage overshoot during light-load transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC010N04LS6 | RDS(on) = 1.0 mΩ @ 4.5 V; Qg = 38 nC; TO-263-7 package (larger footprint, higher RθJA) | Higher thermal resistance (RθJA ≈ 45°C/W vs. 50°C/W for CSD16556Q5B on same board) limits power density | Preferred where through-hole assembly or legacy layout reuse is required; not drop-in for SON 5×6 space-constrained designs |
| Vishay SiR626DP | RDS(on) = 0.85 mΩ @ 10 V; Qg = 42 nC; PowerPAK® 5×6 package with similar footprint but different pinout (G-D-S arrangement) | Higher Qg increases gate drive loss; requires PCB redesign due to non-identical terminal mapping | Consider when marginally lower RDS(on) justifies re-layout and driver recalibration; not pin-compatible with CSD16556Q5B |
Compared with BSC010N04LS6 and SiR626DP, the CSD16556Q5B offers the best balance of ultra-low Qgd/Qg ratio (33%), industry-leading RθJC, and validated 5×6 mm SON layout compatibility-making it optimal for new high-frequency, high-density POL designs where thermal and switching loss budgets are most constrained.
Availability
CSD16556Q5B is available at Aetrix Electronics and suitable for server VRM phase legs, telecom intermediate bus converters, and AI accelerator board POL modules requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.
Supply support for CSD16556Q5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management ICs, with leadership in high-efficiency power conversion solutions.
The CSD16556Q5B belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-current, high-frequency synchronous rectification in point-of-load and intermediate bus converter applications demanding minimal conduction and switching losses.
FAQ
What is the maximum continuous drain current rating for the CSD16556Q5B at 125°C case temperature?
The CSD16556Q5B supports 40 A continuous drain current at TC = 125°C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the VSON-CLIP package under elevated ambient conditions and must be used in thermal design calculations alongside its 1.3°C/W RθJC to ensure junction temperature remains ≤150°C. The CSD16556Q5B maintains 0.9 mΩ RDS(on) at this condition only when VGS = 10 V and ID = 30 A per test condition.
Does the CSD16556Q5B have a built-in Schottky diode or require external body diode optimization?
The CSD16556Q5B uses a planar silicon MOSFET structure with an integrated body diode-not a Schottky-characterized by VSD = 0.8–1.0 V at 30 A and trr = 41 ns. Its reverse recovery charge (Qrr = 84 nC) and fast recovery time are optimized for synchronous rectification, eliminating need for external diodes in standard buck topologies. However, careful gate timing is required to avoid cross-conduction, as the CSD16556Q5B body diode does not replace active synchronous control.
Can the CSD16556Q5B be used with 3.3-V gate drive in high-efficiency applications?
Yes-the CSD16556Q5B specifies RDS(on) = 1.2 mΩ at VGS = 4.5 V and ID = 30 A, making it functional with 3.3-V logic-level gate drivers. However, conduction loss increases ~33% versus 10-V drive (1.2 mΩ vs. 0.9 mΩ), and Qg remains 36 nC, so gate drive power is unchanged. For highest efficiency, 5-V or 10-V drive is recommended; the CSD16556Q5B threshold voltage (VGS(th) = 1.4 V typ) ensures full enhancement at 3.3 V but with reduced margin for noise immunity.
What is the recommended PCB land pattern for thermal performance of the CSD16556Q5B?
Texas Instruments recommends a minimum 1-inch² (6.45 cm²) 2-oz copper pad connected to the exposed drain paddle for optimal thermal performance. The CSD16556Q5B datasheet (SLPS432C, Section 7.2) specifies a recommended stencil pattern with 0.25-mm aperture thickness and 80% area ratio for solder paste deposition. Thermal vias (≥8×0.3-mm diameter, filled or capped) beneath the pad are strongly advised to transfer heat to inner layers or backside copper, targeting ≤50°C/W RθJA in production boards.
Is the CSD16556Q5B suitable for automotive applications per AEC-Q101 qualification?
No-the CSD16556Q5B is not AEC-Q101 qualified. It is rated for industrial temperature range (–55°C to 150°C) and intended for networking, telecom, and computing applications. While its absolute maximum ratings meet some automotive voltage/current requirements, TI does not certify or guarantee its reliability for automotive use. For automotive-grade alternatives, consult TI's AEC-Q101-qualified NexFET™ portfolio-CSD16556Q5B must not be deployed in safety-critical or automotive production without additional qualification testing.
CSD16556Q5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.07mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6180 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 191W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VSONP (5x6)
CSD16556Q5B FAQ
1.How can I place an order for CSD16556Q5B through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD16556Q5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD16556Q5B reliable?
The price and inventory of CSD16556Q5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD16556Q5B is usually 5 days.
3.What payment methods are accepted for CSD16556Q5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD16556Q5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD16556Q5B?
CSD16556Q5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD16556Q5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD16556Q5B?
For technical support, including CSD16556Q5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD16556Q5B requirements.
6.How does Aetrix verify that CSD16556Q5B is sourced from the original manufacturer or authorized distributors?
All CSD16556Q5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD16556Q5B meets industry standards.
7.What is the process for return or replacement of CSD16556Q5B?
All CSD16556Q5B units undergo pre-shipment inspection (PSI). If there is an issue with CSD16556Q5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD16556Q5B part is unused and in its original packaging.
Return procedure for CSD16556Q5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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