Texas Instruments CSD17301Q5A

Overview

CSD17301Q5A from Texas Instruments is a 30V, N-channel NexFET™ power MOSFET in a thermally enhanced 8-pin SON (5 mm × 6 mm) package, optimized for 5V gate drive in synchronous buck converters. It delivers R_DS(on) = 2.3 mΩ at V_GS = 4.5V, Q_g = 19 nC, and avalanche-rated operation up to 414 mJ - enabling high-efficiency point-of-load regulation in notebook and telecom power stages.

For engineers reviewing the CSD17301Q5A datasheet, CSD17301Q5A pinout, CSD17301Q5A application, or CSD17301Q5A equivalent, key selection criteria include its low R_DS(on) at 4.5V drive, ultralow Q_gd (4.3 nC), thermal resistance R_θJC = 2.2°C/W, and compatibility with compact 5×6 mm PCB layouts requiring minimal copper area.

Technical Context

This MOSFET uses a trench-gate silicon process optimized for fast switching and low conduction loss in high-frequency synchronous rectification. Its gate charge profile (Q_g = 19 nC, Q_gd = 4.3 nC) minimizes Miller-induced switching delay and dv/dt sensitivity, while the integrated body diode supports reverse recovery (t_rr = 33 ns, Q_rr = 50 nC) in hard-switched topologies.

The device features a rated V_GS range of +10 V / –8 V, threshold voltage V_GS(th) = 1.1 V (typ), and is specified for continuous drain current I_D = 28 A at T_C = 25°C. Its R_DS(on) remains stable across temperature (R_DS(on) = 3.7 mΩ at 125°C, V_GS = 3V), supporting reliable operation in thermally constrained environments.

Key Specifications

Pinout & Package

Package: VSONP (DQJ) - 8-pin, 5 mm × 6 mm exposed-pad plastic package with bottom-side thermal pad. Designed for low-inductance layout and high-power density mounting on 2-oz copper PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BSC010N04LS and SiR872DP, the CSD17301Q5A provides the best balance of low 4.5V R_DS(on), minimal Q_gd, and thermally efficient 5×6 mm SON packaging - making it optimal for space-constrained, high-efficiency synchronous buck converters where gate drive is fixed at 5V.

Availability

CSD17301Q5A is available at Aetrix Electronics and suitable for notebook point-of-load, networking synchronous buck, and computing VRM phase-leg applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for CSD17301Q5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-efficiency power conversion solutions.

The CSD17301Q5A belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-current synchronous rectification in point-of-load and intermediate bus converters where 5V gate drive and thermal density are critical.

FAQ

What is the maximum continuous drain current for CSD17301Q5A at 100°C case temperature?

The CSD17301Q5A supports 28 A continuous drain current at T_C = 25°C per datasheet specifications. At T_C = 100°C, derating applies: using the typical R_DS(on) vs. temperature curve (Figure 8), R_DS(on) rises to ~3.2 mΩ, and thermal limits constrain I_D to approximately 18 A for safe operation within its 3.2 W power dissipation limit and 150°C max junction temperature. Always verify with actual board thermal design.

Does CSD17301Q5A require a negative gate voltage for reliable turn-off in high-dv/dt environments?

No, the CSD17301Q5A does not require negative gate drive. Its low Q_gd (4.3 nC) and optimized gate oxide reduce Miller feedback susceptibility. With proper PCB layout (minimized gate loop inductance) and a gate resistor ≤2 Ω, the device achieves clean turn-off even in 600 kHz+ synchronous buck converters with dv/dt >10 V/ns. Negative bias is unnecessary unless operating near absolute maximum V_GS limits.

Can CSD17301Q5A be used as a high-side switch in a floating gate configuration?

The CSD17301Q5A is rated for V_GS = +10 V / –8 V and is not designed for high-side floating operation without level-shifted gate drive. Its source terminal is internally tied to the thermal pad, making source-referenced gate control mandatory. For high-side use, a dedicated high-voltage level shifter or gate driver IC (e.g., TI UCC27201) is required - and even then, the device's 30V V_DS rating limits it to low-input-voltage topologies like 24V bus systems.

What is the recommended PCB land pattern for CSD17301Q5A's thermal pad?

The recommended PCB land pattern for the CSD17301Q5A thermal pad is defined in TI's SLPA005 application note and datasheet Figure M0138-01: a 4.9 mm × 4.46 mm copper area (F10 × F11) with eight 0.65 mm thermal vias (F4) evenly distributed beneath the pad, connected to an internal or bottom-layer 1-inch² 2-oz copper plane. This achieves the specified R_θJA = 49°C/W and prevents solder voiding during reflow.

Is CSD17301Q5A suitable for automotive applications per AEC-Q101?

No, the CSD17301Q5A is not AEC-Q101 qualified. It is rated for industrial temperature range (–55°C to +150°C) and RoHS compliance, but TI does not list it in their AEC-Q101 automotive-grade portfolio. For automotive powertrain or ADAS applications, consider TI's AEC-Q101-qualified alternatives such as CSD17579Q5A or CSD17581Q5A, which share the same package and pinout but include extended reliability testing and automotive-specific qualification data.