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Texas Instruments CSD17306Q5A
- Part No.:
- CSD17306Q5A
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
CSD17306Q5A.pdf
- Description:
- MOSFET N-CH 30V 24A/100A 8VSON
- Quantity:
- Payment:
- Shipping:
Inventory:3,928
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Product details
Overview
CSD17306Q5A from Texas Instruments is a 30V, N-channel NexFET™ power MOSFET in an 8-pin SON 5-mm × 6-mm package, optimized for 5V gate drive in high-efficiency synchronous buck converters. It delivers RDS(on) = 3.3 mΩ at VGS = 4.5V, Qg = 11.8 nC, and supports continuous drain current up to 24 A at TC = 25°C - used in notebook point-of-load and telecom DC/DC modules.
For engineers reviewing the CSD17306Q5A datasheet, CSD17306Q5A pinout, CSD17306Q5A application, or CSD17306Q5A equivalent, key selection criteria include low gate charge for fast switching, ultralow on-resistance at 5V drive, thermal resistance (RθJA = 49°C/W), avalanche rating (EAS = 274 mJ), and RoHS-compliant SON packaging with MSL Level-1 reflow compatibility.
Technical Context
The CSD17306Q5A employs a trench-gate silicon process optimized for minimal conduction and switching losses in high-frequency synchronous rectification. Its low Qgd/Qg ratio (2.4 nC / 11.8 nC) enables sharp voltage transitions and reduced Miller-induced shoot-through risk in half-bridge topologies.
Designed for 5V gate drive systems, it features a 1.1 V typical threshold voltage and maintains stable RDS(on) across –55°C to 150°C junction temperature. The device integrates an intrinsic body diode with VSD = 0.85 V at 22 A and Qrr = 27 nC, supporting efficient reverse recovery in synchronous buck operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24V input rails and transient margin in POL converters |
| RDS(on) @ VGS = 4.5V | 3.3 mΩ - Enables <1.6 W conduction loss at 22 A, critical for high-current, low-voltage output stages |
| Qg | 11.8 nC - Low total gate charge reduces driver power demand and allows use of compact gate drivers |
| Qgd | 2.4 nC - Minimizes Miller plateau duration, improving switching speed and reducing overlap loss |
| RθJA | 49°C/W - Achievable with 1-in² 2-oz copper pad; enables 3.2 W power dissipation without forced cooling |
| EAS | 274 mJ - Avalanche-rated for robustness against inductive switching stress in unclamped conditions |
| VGS(th) | 1.1 V (typ) - Ensures reliable turn-on with standard 3.3V/5V logic-level controllers |
Pinout & Package
Package: VSONP (DQJ) 8-pin, 5 mm × 6 mm plastic SON with exposed thermal pad (top view: Gate–Source–Drain layout). Pin 1 marked by notch/dot; pins 1–4 on left side, 5–8 on right; thermal pad (pin 9, non-electrical) centered on bottom.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–10 V drive; low input capacitance (Ciss = 2170 pF) minimizes driver loading |
| 2 (S) | Source | Reference node for gate drive; tied to power ground in low-side configuration; connects to thermal pad |
| 3 (S) | Source | Parallel source connection; reduces source inductance and improves current sharing in high-di/dt operation |
| 4 (S) | Source | Additional source terminal; lowers effective RDS(on) and enhances thermal coupling to PCB |
| 5 (D) | Drain | Main power path output; connected to switch node in buck topology; ties to internal die drain metallization |
| 6 (D) | Drain | Parallel drain connection; distributes current and reduces package inductance in high-frequency switching |
| 7 (D) | Drain | Third drain terminal; improves thermal conduction from die to PCB copper area |
| 8 (D) | Drain | Fourth drain terminal; supports >100 A pulsed current capability (IDM = 155 A) with low parasitic inductance |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for 5V gate drive | Guarantees full enhancement and minimal RDS(on) using standard buck controller gate outputs - no level-shifting required |
| Ultralow Qg and Qgd | Reduces switching energy loss and enables >1 MHz operation with low driver IC power consumption |
| Avalanche rated | Withstands single-pulse inductive energy up to 274 mJ (ID = 74 A, L = 0.1 mH), eliminating need for external clamping in many designs |
| Low thermal resistance | RθJC = 0.9°C/W enables direct heat transfer from die to PCB thermal pad - critical for compact, fanless POL modules |
| RoHS & halogen free | Complies with IPC-1752 material declarations and JEDEC J-STD-609A Class 1 marking for green manufacturing |
Applications
| Notebook Point-of-Load | Networking Synchronous Buck |
|---|---|
|
Use Scenario: Voltage regulation for CPU/GPU core rails in thin-and-light notebooks with strict thermal and size constraints. IC Role / Device Role: Low-side synchronous rectifier in 300 kHz–1 MHz multiphase buck converter. Use Value: 3.3 mΩ RDS(on) at 4.5V drive cuts conduction loss by >35% vs. legacy 12V-gate MOSFETs, extending battery runtime. |
Use Scenario: Intermediate bus conversion (12V → 3.3V/1.8V) in enterprise switches and routers with high power density requirements. IC Role / Device Role: High-current power stage switch in dual-phase interleaved buck regulator. Use Value: 11.8 nC Qg allows use of low-cost integrated drivers (e.g., TI UCC27524), reducing BOM count and layout complexity. |
| Telecom DC/DC Module | Industrial FPGA Power Supply |
|
Use Scenario: Compact 50 A output module for base station radio cards operating in extended temperature range (–40°C to +85°C). IC Role / Device Role: Primary output switch in 48V input, 5V/12V isolated DC/DC with synchronous rectification. Use Value: Avalanche rating (274 mJ) ensures reliability during hot-swap transients and load-dump events without derating. |
Use Scenario: Core voltage supply (0.85V @ 40A) for Xilinx Kintex/UltraScale FPGAs in programmable logic controllers. IC Role / Device Role: Bottom-side switch in multiphase VR13-compliant buck converter with DCR current sensing. Use Value: Stable RDS(on) over temperature (±15% from –55°C to 125°C) enables accurate current monitoring and phase balancing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS6 | RDS(on) = 1.4 mΩ @ 4.5V, but larger 5×6 mm TSDSON package; Qg = 24.5 nC - higher switching loss | Better for ultra-low RDS(on) needs at cost of increased gate drive power and layout area | Select when lowest conduction loss dominates design; verify thermal pad soldering compatibility with TI's Q5A footprint |
| Vishay SiR626DP | RDS(on) = 3.7 mΩ @ 4.5V, Qg = 13.5 nC, same 5×6 mm PowerPAK SO-8L package; lower EAS (190 mJ) | Suitable for less aggressive transient environments; slightly higher conduction loss at 22 A | Choose for second-source assurance where identical footprint and RoHS compliance are mandatory, but avalanche margin is secondary |
Compared with BSC014N04LS6 and SiR626DP, the CSD17306Q5A offers the best balance of low Qg, tight VGS(th) distribution, and proven avalanche ruggedness in 5V-driven POL systems - making it preferred for space-constrained, high-reliability telecom and computing applications.
Availability
CSD17306Q5A is available at Aetrix Electronics and suitable for notebook point-of-load, networking synchronous buck, and telecom DC/DC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for CSD17306Q5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-efficiency power conversion solutions.
The CSD17306Q5A belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, low-voltage synchronous buck regulators in computing, networking, and portable electronics.
FAQ
What is the maximum continuous drain current for CSD17306Q5A at 100°C case temperature?
The CSD17306Q5A supports 24 A continuous drain current at TC = 25°C per datasheet SLPS253A. At TC = 100°C, derating applies: using the normalized RDS(on) curve (Figure 8), resistance increases ~1.3×, limiting practical continuous current to approximately 18–19 A under sustained thermal conditions - always verify with actual board thermal performance and layout.
Does CSD17306Q5A support 3.3V gate drive in practice?
Yes - the CSD17306Q5A has a typical VGS(th) of 1.1 V and achieves RDS(on) = 4.2 mΩ at VGS = 3V (ID = 22 A), confirming usable conduction with 3.3V logic-level drivers. However, full optimization (3.3 mΩ) requires 4.5V, so 3.3V operation trades ~27% higher conduction loss for simplified drive circuitry.
What is the recommended PCB land pattern for CSD17306Q5A?
The official TI land pattern (document SLPA005) specifies F1 = 6.25 mm, F2/F3 = 4.51 mm, F4–F9 = 0.67 mm wide, and F10 = 4.95 mm for the 8-pin Q5A package. Critical elements include a 4.9 mm × 3.7 mm thermal pad with 0.3 mm solder mask opening and 8–12 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground planes.
Is CSD17306Q5A suitable for hard-switched ZVS or LLC resonant topologies?
No - the CSD17306Q5A is not characterized for zero-voltage switching applications. Its Qrr = 27 nC and trr = 25 ns are optimized for synchronous buck rectification, not resonant gate driving. For ZVS/LLC, TI recommends CSD18532Q5B or CSD17579Q5A, which feature tailored body diode recovery and lower Qgd/Qgs ratios.
What is the peak pulsed drain current rating for CSD17306Q5A?
The CSD17306Q5A is rated for IDM = 155 A pulsed drain current at TA = 25°C with pulse duration ≤300 µs and duty cycle ≤2%, per Absolute Maximum Ratings table. This reflects short-circuit capability during fault conditions - sustained operation above 24 A requires active thermal management and layout validation.
CSD17306Q5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 3V, 8V
- Rds On (Max) @ Id, Vgs:
- 3.7mOhm @ 22A, 8V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.3 nC @ 4.5 V
- Vgs (Max):
- +10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2170 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VSONP (5x6)
CSD17306Q5A FAQ
1.How can I place an order for CSD17306Q5A through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD17306Q5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD17306Q5A reliable?
The price and inventory of CSD17306Q5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17306Q5A is usually 5 days.
3.What payment methods are accepted for CSD17306Q5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD17306Q5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD17306Q5A?
CSD17306Q5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD17306Q5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD17306Q5A?
For technical support, including CSD17306Q5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17306Q5A requirements.
6.How does Aetrix verify that CSD17306Q5A is sourced from the original manufacturer or authorized distributors?
All CSD17306Q5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17306Q5A meets industry standards.
7.What is the process for return or replacement of CSD17306Q5A?
All CSD17306Q5A units undergo pre-shipment inspection (PSI). If there is an issue with CSD17306Q5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD17306Q5A part is unused and in its original packaging.
Return procedure for CSD17306Q5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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