Texas Instruments CSD17313Q2Q1

Overview

CSD17313Q2Q1 from Texas Instruments is a 30-V, 24-mΩ N-channel NexFET™ power MOSFET in a 2-mm × 2-mm SON package, optimized for 5-V gate drive in high-efficiency DC-DC converters and battery management systems; features ultra-low Qg (2.1 nC) and Qgd (0.4 nC), R_DS(on) = 26 mΩ at V_GS = 4.5 V, and automotive qualification per AEC-Q101.

For engineers reviewing the CSD17313Q2Q1 datasheet, CSD17313Q2Q1 pinout, CSD17313Q2Q1 application, or CSD17313Q2Q1 equivalent, key selection criteria include gate charge minimization for synchronous buck efficiency, thermal resistance (R_θJC = 7.4°C/W), low-threshold voltage (V_GS(th) = 1.3 V), and SON package compatibility with space-constrained PCB layouts.

Technical Context

This device employs a trench-gate silicon process optimized for fast switching and low conduction loss in unidirectional high-side or low-side configurations. Its gate threshold voltage (0.9–1.8 V) enables reliable turn-on with 3.3-V or 5-V controllers, while its low output capacitance (C_oss = 140–180 pF) reduces switching losses in MHz-range converters.

The CSD17313Q2Q1 integrates a body diode with V_SD = 0.85 V at 4 A and Q_rr = 6.4 nC, supporting synchronous rectification and hard-switched topologies. Thermal design leverages the SON package's low junction-to-case resistance (7.4°C/W) and exposed drain pad for direct thermal coupling to PCB copper.

Key Specifications

Pinout & Package

Package: SON (WSON-DQK), 2 mm × 2 mm, 6-pin, exposed drain pad (Pin 1 = Gate, Pins 4 & 7 = Source, Pins 1/2/5/6/8 = Drain).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BSC014N04LS6 and NTMFS4C09NT1G, the CSD17313Q2Q1 delivers optimal balance of low gate charge (2.1 nC), compact size (2 mm × 2 mm), and automotive qualification-making it preferred for space-constrained, high-frequency, and safety-critical 12–24-V systems where driver efficiency and reliability are co-prioritized.

Availability

CSD17313Q2Q1 is available at Aetrix Electronics and suitable for DC-DC converters, battery disconnect switches, and USB-C power delivery load management requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.

Supply support for CSD17313Q2Q1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a U.S.-based semiconductor company specializing in analog, embedded processing, and power management ICs, with leadership in high-efficiency power solutions and automotive electronics.

The CSD17313Q2Q1 belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in space- and thermally-constrained applications such as automotive ADAS, portable computing, and industrial PLCs.

FAQ

What is the maximum continuous drain current rating for the CSD17313Q2Q1 at 25°C case temperature?

The CSD17313Q2Q1 supports a continuous drain current of 19 A at T_C = 25°C, limited by package thermal capability rather than silicon die. This rating assumes proper PCB copper area (1-inch², 2-oz Cu) and accounts for R_θJC = 7.4°C/W. At higher case temperatures, current must be derated per the datasheet's Figure 12 curve; for example, at T_C = 100°C, the safe continuous current drops to approximately 7.3 A.

Does the CSD17313Q2Q1 require a gate resistor for stable operation in a 1-MHz synchronous buck converter?

The CSD17313Q2Q1 benefits from a small gate resistor (typically 1–5 Ω) to dampen ringing caused by parasitic inductance in high-dI/dt switching, especially given its ultra-low Q_g (2.1 nC) and fast t_f (1.3 ns). While not strictly required for functionality, a 2.2-Ω resistor is recommended in evaluation designs to ensure clean gate waveforms and prevent shoot-through in half-bridge configurations using the CSD17313Q2Q1 as the low-side switch.

Is the CSD17313Q2Q1 pin-compatible with other devices in the CSD173xxQ2 family?

Yes-the CSD17313Q2Q1 shares identical pinout, package dimensions (SON 2-mm × 2-mm, WSON-DQK), and thermal pad layout with other members of the CSD173xxQ2 series (e.g., CSD17308Q2, CSD17312Q2). This allows direct substitution within the same family for R_DS(on) or Q_g optimization without PCB redesign, provided gate drive strength and thermal margins are verified for the selected variant.

What is the avalanche energy rating of the CSD17313Q2Q1, and under what conditions is it specified?

The CSD17313Q2Q1 has a single-pulse avalanche energy rating (E_AS) of 18 mJ, measured under standardized test conditions: I_D = 19 A, L = 0.1 mH, and R_G = 25 Ω. This rating reflects ruggedness during transient overvoltage events such as inductive load switching or input surge, and is validated per JEDEC JESD24-11. It does not imply continuous avalanche operation capability.

How does the CSD17313Q2Q1's body diode performance compare to discrete Schottky diodes in synchronous rectification?

The CSD17313Q2Q1's integrated body diode exhibits V_SD = 0.85 V at 4 A and Q_rr = 6.4 nC, outperforming typical 30-V Schottky diodes (V_F ≈ 0.4–0.5 V but Q_rr ≈ 0 nC) in reverse recovery behavior but with higher forward drop. In synchronous buck topologies, the body diode is only active during dead time; its low Q_rr minimizes reverse recovery loss, while the MOSFET's R_DS(on) dominates conduction loss-making the CSD17313Q2Q1 more efficient overall than Schottky-based designs above ~2 A load.