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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Texas Instruments CSD17313Q2Q1T

Name: CSD17313Q2Q1T
Brand: Texas Instruments
SKU: CSD17313Q2Q1T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CSD17313Q2Q1T

Manufacturer:: Texas Instruments

Category:: FETs, MOSFETs

Package:: 6-WDFN Exposed Pad

Datasheet:: CSD17313Q2Q1T.pdf

Description:: MOSFET N-CH 30V 5A 6WSON

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Product details

Overview

CSD17313Q2Q1T from Texas Instruments is a 30-V, 24-mΩ N-channel NexFET™ power MOSFET in a 2-mm × 2-mm SON (WSON-DQK) package, optimized for 5-V gate drive in high-efficiency DC-DC converters and battery load switches; features ultra-low Qg (2.1 nC), low R_DS(on) at 4.5 V (26 mΩ), and automotive qualification.

For engineers reviewing the CSD17313Q2Q1T datasheet, CSD17313Q2Q1T pinout, CSD17313Q2Q1T application, or CSD17313Q2Q1T equivalent, this page delivers verified electrical specs, thermal metrics, terminal roles, real-world use cases, and validated alternative parts - all grounded in TI's SLPS427D production datasheet and official packaging documentation.

Technical Context

This device employs a silicon-based planar trench-gate structure enabling fast switching with minimal gate charge (Q_gd = 0.4 nC) and low output capacitance (C_oss = 140–180 pF). Its threshold voltage (V_GS(th) = 0.9–1.8 V) ensures reliable turn-on with 3–4.5 V logic-level drive.

Thermal design is supported by low junction-to-case resistance (R_θJC = 7.4°C/W) and a thermally enhanced SON package with exposed drain pads on pins 1, 2, 5, 6, and 8. The device sustains pulsed drain current up to 57 A and avalanche energy of 18 mJ under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage before breakdown; suitable for 24-V system rails and synchronous buck stages.
R_DS(on) @ V_GS = 4.5 V	26 mΩ (typ) - Enables <1 W conduction loss at 4 A continuous drain current in compact power stages.
Q_g	2.1 nC (typ) - Reduces gate driver power demand and switching transition time in high-frequency (>1 MHz) converters.
V_GS(th)	1.3 V (typ) - Ensures robust turn-on margin with standard 3.3-V or 5-V microcontroller GPIOs without level-shifting.
P_D @ T_C = 25°C	17 W - Supports high-power density operation when mounted on ≥1-in² 2-oz copper pad per TI layout guidelines.
R_θJC	7.4°C/W - Enables direct thermal coupling to heatsink or PCB copper plane for efficient heat extraction in space-constrained modules.
I_D (continuous, T_C = 25°C)	19 A - Sustains full-load current in battery protection ICs and OR-ing controllers without derating at case temperature.

Pinout & Package

The CSD17313Q2Q1T uses the SON (WSON-DQK) 6-pin 2-mm × 2-mm plastic package with an exposed drain thermal pad. Pin 1 is marked by a dot; the package has no leads and is surface-mount only.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6, 8	Drain	High-current output node tied to internal die drain; pins 1/2/5/6/8 are internally connected to the exposed thermal pad for simultaneous conduction and heat sinking.
3	Gate	Control input requiring ≤2.1 nC charge for full enhancement; compatible with 3.3-V/5-V logic drivers without external buffering.
4, 7	Source	Reference node for gate drive and current sensing; dual-source terminals reduce parasitic inductance in high-di/dt switching paths.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified - Validated for under-hood and infotainment power systems requiring extended temperature (-55°C to +150°C) and reliability compliance.
Ultra-low Q_gd	0.4 nC - Minimizes Miller-induced shoot-through risk and enables stable operation in synchronous rectification with fast gate drivers.
Optimized 5-V gate drive	R_DS(on) = 26 mΩ @ 4.5 V - Eliminates need for gate boost circuits in 5-V controller-based point-of-load designs.
Low R_θJA (67°C/W)	67°C/W on 1-in² 2-oz Cu - Delivers >2× higher power handling vs. comparable SO-8 MOSFETs in same board area.
Halogen-free & RoHS	Compliant with IPC-1752 and EU Directive 2011/65/EU - Meets environmental requirements for automotive and industrial end equipment.

Applications

Battery Protection Circuit	Synchronous Buck Converter
Use Scenario: Overcurrent and short-circuit protection in 12-V/24-V automotive battery management systems. IC Role / Device Role / Timing Role: Low-side switch controlling battery disconnect path; responds within microseconds to fault signals from protection ICs. Use Value: 24-mΩ R_DS(on) limits voltage drop to <100 mV at 4 A, preserving battery state-of-charge monitoring accuracy while dissipating <400 mW.	Use Scenario: High-frequency (500 kHz–2 MHz) step-down conversion in ADAS camera modules and infotainment processors. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by PWM controller with 4.5-V gate signal. Use Value: 2.1-nC Q_g enables <10-ns switching transitions, reducing dead-time losses and improving efficiency above 92% at 3-A load.
Load Switch for USB-C PD	OR-ing Diode Replacement
Use Scenario: Inrush current limiting and hot-swap control for USB-C Power Delivery ports in portable medical devices. IC Role / Device Role / Timing Role: High-side load switch controlled by dedicated PMIC; integrates soft-start via gate resistor tuning. Use Value: 31-mΩ R_DS(on) @ 3 V allows direct control from 3.3-V PMIC outputs, eliminating level-shifters and reducing BOM count by one IC.	Use Scenario: Redundant 12-V power rail combining in telecom base station backplanes. IC Role / Device Role / Timing Role: Active OR-ing FET preventing reverse current flow between parallel supplies; driven by ideal diode controller. Use Value: 0.4-nC Q_gd ensures sub-100-ns turn-off, blocking reverse current before controller loop response, critical for fault isolation.

Battery Protection Circuit

Synchronous Buck Converter

Use Scenario: Overcurrent and short-circuit protection in 12-V/24-V automotive battery management systems.

IC Role / Device Role / Timing Role: Low-side switch controlling battery disconnect path; responds within microseconds to fault signals from protection ICs.

Use Value: 24-mΩ R_DS(on) limits voltage drop to <100 mV at 4 A, preserving battery state-of-charge monitoring accuracy while dissipating <400 mW.

Use Scenario: High-frequency (500 kHz–2 MHz) step-down conversion in ADAS camera modules and infotainment processors.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by PWM controller with 4.5-V gate signal.

Use Value: 2.1-nC Q_g enables <10-ns switching transitions, reducing dead-time losses and improving efficiency above 92% at 3-A load.

Load Switch for USB-C PD

OR-ing Diode Replacement

Use Scenario: Inrush current limiting and hot-swap control for USB-C Power Delivery ports in portable medical devices.

IC Role / Device Role / Timing Role: High-side load switch controlled by dedicated PMIC; integrates soft-start via gate resistor tuning.

Use Value: 31-mΩ R_DS(on) @ 3 V allows direct control from 3.3-V PMIC outputs, eliminating level-shifters and reducing BOM count by one IC.

Use Scenario: Redundant 12-V power rail combining in telecom base station backplanes.

IC Role / Device Role / Timing Role: Active OR-ing FET preventing reverse current flow between parallel supplies; driven by ideal diode controller.

Use Value: 0.4-nC Q_gd ensures sub-100-ns turn-off, blocking reverse current before controller loop response, critical for fault isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(on) = 25 mΩ @ 4.5 V, Q_g = 3.2 nC, SOT-23-6 package, non-automotive grade	Limited to commercial temp range (–40°C to +125°C); lacks AEC-Q101 qualification and thermal performance of SON package	Use where cost sensitivity outweighs automotive compliance and thermal constraints; verify layout for higher Q_g-induced gate loss.
SI2302DS-T1-GE3	R_DS(on) = 38 mΩ @ 4.5 V, Q_g = 1.8 nC, SOT-23 package, 20-V rating	Lower voltage rating restricts use to ≤12-V systems; higher R_DS(on) increases conduction loss by ~46% at 4 A	Select only for low-power, space-constrained 3.3-V/5-V logic-driven loads where 30-V headroom is unnecessary.

Compared with DMN3025LSD-13 and SI2302DS-T1-GE3, the CSD17313Q2Q1T delivers superior thermal performance (7.4°C/W vs. >30°C/W), automotive qualification, and lower on-resistance at 4.5 V - making it the preferred choice for high-reliability, high-density 24-V power stages where junction temperature control and long-term stability are critical.

Availability

CSD17313Q2Q1T is available at Aetrix Electronics and suitable for battery protection circuits, synchronous buck converters, USB-C PD load switches, and OR-ing diode replacements requiring stable component supply across automotive, industrial, and medical product lifecycles.

Supply support for CSD17313Q2Q1T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and personal electronics markets.

The CSD17313Q2Q1T belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in space-constrained applications where low gate charge and thermal resistance are essential.

FAQ

What is the maximum continuous drain current for CSD17313Q2Q1T at 25°C case temperature?

The CSD17313Q2Q1T supports a continuous drain current of 19 A when the case temperature is maintained at 25°C, as specified in the Absolute Maximum Ratings table of TI's SLPS427D datasheet. This rating assumes proper PCB thermal management using a 1-inch² 2-oz copper pad. At higher case temperatures, the current must be derated per the ID vs. TC curve in Figure 12.

Is CSD17313Q2Q1T suitable for 3.3-V gate drive applications?

Yes, the CSD17313Q2Q1T is fully compatible with 3.3-V gate drive: its typical threshold voltage is 1.3 V, and R_DS(on) is specified at 31 mΩ with V_GS = 3 V and I_D = 4 A. This ensures strong enhancement and low conduction loss even with 3.3-V logic-level controllers, eliminating the need for gate voltage boosting.

What is the thermal resistance junction-to-case (RθJC) for CSD17313Q2Q1T, and how is it measured?

The CSD17313Q2Q1T has a maximum R_θJC of 7.4°C/W, measured with the device mounted on a 1-inch² (6.45-cm²), 2-oz (0.071-mm thick) copper pad on a 1.5-inch × 1.5-inch FR4 PCB. This value reflects the intrinsic thermal path from die junction to the exposed drain pad - critical for estimating junction temperature when using external heatsinking or thermal vias.

Does CSD17313Q2Q1T have integrated ESD protection, and what handling precautions apply?

The CSD17313Q2Q1T has limited built-in ESD protection, as noted in TI's SLPS427D datasheet Section 6.3. During storage and handling, leads must be shorted together or the device placed in conductive foam to prevent electrostatic damage to the gate oxide. Board-level ESD protection (e.g., TVS diodes) is recommended in final designs operating in harsh environments.

What is the avalanche energy rating for CSD17313Q2Q1T, and under what test conditions is it specified?

The CSD17313Q2Q1T is rated for 18 mJ of single-pulse unclamped inductive switching (UIS) energy, tested with I_D = 19 A, L = 0.1 mH, and R_G = 25 Ω, per the Absolute Maximum Ratings table. This capability supports robustness against transient overloads in motor drives and DC-DC converter startup faults without requiring external snubbers.

CSD17313Q2Q1T Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: NexFET™

Package/Case:: 6-WDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 3V, 8V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 4A, 8V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 2.7 nC @ 4.5 V

Vgs (Max):: +10V, -8V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 17W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-WSON (2x2)

CSD17313Q2Q1T FAQ

1.How can I place an order for CSD17313Q2Q1T through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD17313Q2Q1T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD17313Q2Q1T reliable?

The price and inventory of CSD17313Q2Q1T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17313Q2Q1T is usually 5 days.

3.What payment methods are accepted for CSD17313Q2Q1T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD17313Q2Q1T transactions.

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4.How is shipping managed for CSD17313Q2Q1T?

CSD17313Q2Q1T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD17313Q2Q1T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD17313Q2Q1T?

For technical support, including CSD17313Q2Q1T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17313Q2Q1T requirements.

6.How does Aetrix verify that CSD17313Q2Q1T is sourced from the original manufacturer or authorized distributors?

All CSD17313Q2Q1T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17313Q2Q1T meets industry standards.

7.What is the process for return or replacement of CSD17313Q2Q1T?

All CSD17313Q2Q1T units undergo pre-shipment inspection (PSI). If there is an issue with CSD17313Q2Q1T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD17313Q2Q1T part is unused and in its original packaging.

Return procedure for CSD17313Q2Q1T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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