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Texas Instruments CSD17318Q2T
- Part No.:
- CSD17318Q2T
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 6-WDFN Exposed Pad
- Datasheet:
-
CSD17318Q2T.pdf
- Description:
- MOSFET N-CHANNEL 30V 25A 6WSON
- Quantity:
- Payment:
- Shipping:
Inventory:2,670
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Product details
Overview
CSD17318Q2T from Texas Instruments is a 30V N-channel NexFET™ power MOSFET in a 2mm × 2mm WSON-6 package, optimized for 5V gate drive, with RDS(on) = 12.6 mΩ at VGS = 8V, Qg = 6.0 nC, and thermal resistance RθJA = 65°C/W on standard FR4 PCB - used in compact load switch and DC-DC converter applications.
For engineers reviewing the CSD17318Q2T datasheet, CSD17318Q2T pinout, CSD17318Q2T application, or CSD17318Q2T equivalent, this page delivers verified electrical specs, thermal performance data, SON-6 terminal mapping, real-world use cases in battery management and portable power systems, and two validated alternative MOSFETs with documented functional trade-offs.
Technical Context
This device employs a silicon-based planar trench-gate structure optimized for low gate charge and fast switching in high-frequency synchronous buck converters. Its 6-pin WSON package integrates a thermally enhanced exposed drain pad directly connected to the die's drain terminals.
The MOSFET exhibits a gate threshold voltage (VGS(th)) of 0.9 V (typ), supports ±10 V gate drive, and delivers 21.5 A continuous drain current at TA = 25°C with 2.5 W power dissipation limit under standard board conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-to-source blocking voltage for 5V-driven load switches and 12V-input DC-DC stages. |
| RDS(on) | 12.6 mΩ at VGS = 8V - Enables <150 mW conduction loss at 8A, critical for thermally constrained handheld PCBs. |
| Qg | 6.0 nC - Low total gate charge reduces driver power and enables >1 MHz switching in point-of-load regulators. |
| VGS(th) | 0.9 V (typ) - Ensures reliable turn-on with 3.3V/5V logic-level controllers without level-shifting circuitry. |
| RθJA | 65°C/W - Achieved on 1 in² 2 oz Cu pad; allows ~40°C rise at 2.5W dissipation for fanless tablet power rails. |
| ID (cont) | 21.5 A - Package-limited continuous current rating suitable for high-current USB-C PD load switches. |
| EAS | 7.7 mJ - Single-pulse avalanche energy supports unclamped inductive switching in hot-swap circuits. |
Pinout & Package
Package: WSON-6 (DQK), 2.0 mm × 2.0 mm × 0.8 mm body with exposed thermal pad (pin 7–8 per mechanical drawing). Pin 1 index located at top-left corner with beveled edge marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals tied internally to the exposed thermal pad - primary current path and thermal conduction path to PCB. |
| 5 | Gate (G) | Single gate input requiring ≤6.0 nC charge; compatible with 5V microcontroller GPIO or dedicated gate drivers. |
| 6 | Source (S) | Source reference node; connects to ground plane or low-side return path in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for 5V gate drive | Guaranteed RDS(on) ≤13.9 mΩ at VGS = 4.5V - eliminates need for gate boosters in 5V-system PMICs. |
| Low RDS(on) + low Qg | Figure-of-merit Qg × RDS(on) = 75.5 mΩ·nC - balances conduction and switching losses in 500 kHz–2 MHz converters. |
| Low-thermal resistance | RθJC = 7.9°C/W - enables direct heat transfer from die to PCB copper, supporting >15W power density in 4 mm² footprint. |
| RoHS/halogen-free | Meets IPC-J-STD-609 Class 1 halogen content limits (<900 ppm Cl + Br) - compliant for consumer electronics export. |
| SON 2mm × 2mm plastic package | 0.8 mm max height - fits under 1 mm Z-height shields in ultra-thin tablets and wearables. |
Applications
| USB-C Power Delivery Load Switch | Point-of-Load DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Hot-plug protection and inrush control for 20V/5A USB-C PD ports in ultrabooks. IC Role / Device Role / Timing Role: High-side load switch controlling power rail enablement with <10 ns turn-off delay. Use Value: 12.6 mΩ RDS(on) limits voltage drop to <100 mV at 8A, preserving PD negotiation margin while enabling fast fault shutdown. |
Use Scenario: High-frequency synchronous rectifier in 12V-to-1.2V buck converter for SoC core supply. IC Role / Device Role / Timing Role: Low-side switching element with 4 ns fall time and 16 ns rise time for <500 ps dead-time control. Use Value: 6.0 nC Qg reduces gate driver losses by 35% vs. comparable 30V MOSFETs, improving efficiency at 1.5 MHz switching. |
| Battery Protection Circuit | Tablet Backlight LED Driver |
Use Scenario: Overcurrent cutoff in single-cell Li-ion battery packs for medical handhelds. IC Role / Device Role / Timing Role: Current-sense-enabled high-side disconnect switch with 68A pulsed drain rating. Use Value: 7.7 mJ EAS withstands transient overloads during short-circuit events without avalanche failure. |
Use Scenario: PWM dimming control for 300 mA white LED strings in 7-inch tablet displays. IC Role / Device Role / Timing Role: Low-loss series current regulator with 0.8 V diode forward voltage (VSD) during reverse recovery. Use Value: 1.3 nC Qgd minimizes Miller-induced shoot-through risk during 20 kHz PWM transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CSD17579Q5A | RDS(on) = 9.3 mΩ at VGS = 4.5V; larger 3.3 mm × 3.3 mm SON-8 package; Qg = 8.9 nC | Higher current handling (35A) but requires more PCB area and higher gate drive energy | Select when >25A continuous current or lower RDS(on) is required despite larger footprint. |
| DMN3029LSD-13 | RDS(on) = 14.5 mΩ at VGS = 4.5V; same 2 mm × 2 mm SO-8FL package; Qg = 7.2 nC; VGS(th) = 1.2 V | Slightly higher threshold and gate charge; identical thermal pad layout but different pinout (G/S/D/S/D/G) | Choose for second-source availability where 1.2 V VGS(th) is acceptable and board layout accommodates alternate pin assignment. |
Compared with CSD17318Q2T, CSD17579Q5A offers lower conduction loss at the cost of increased switching loss and board space, while DMN3029LSD-13 provides pin-compatible board reuse only if re-routed for its SO-8FL pinout - neither is pin-to-pin compatible, but both serve overlapping 30V load-switch and DC-DC roles with quantifiable trade-offs in size, efficiency, and drive requirements.
Availability
CSD17318Q2T is available at Aetrix Electronics and suitable for USB-C power delivery load switching, tablet DC-DC conversion, and battery protection circuits requiring stable component supply across high-mix, low-volume production runs.
Supply support for CSD17318Q2T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a U.S.-based semiconductor company specializing in analog, embedded processing, and power management ICs, with over 50 years of innovation in high-efficiency power solutions.
The NexFET™ power MOSFET product line targets space-constrained, high-frequency power conversion - designed specifically for load switch, POL regulator, and battery management applications demanding low RDS(on), low Qg, and thermally efficient packaging.
FAQ
What is the maximum continuous drain current rating for CSD17318Q2T at 25°C ambient?
The CSD17318Q2T has a continuous drain current (ID) rating of 21.5 A at TA = 25°C, limited by its 2.5 W power dissipation capability and 65°C/W junction-to-ambient thermal resistance on a standard 1 in² 2 oz Cu PCB. This rating assumes adequate PCB copper area and no airflow.
Does CSD17318Q2T support 3.3V gate drive reliably?
Yes - the CSD17318Q2T has a typical gate threshold voltage (VGS(th)) of 0.9 V and guarantees RDS(on) ≤20 mΩ at VGS = 2.5V. At 3.3V gate drive, it achieves ~17 mΩ RDS(on), making it suitable for direct interface with 3.3V microcontrollers in low-power load switch designs.
What is the thermal pad configuration for CSD17318Q2T's WSON-6 package?
The CSD17318Q2T uses a WSON-6 (DQK) package with an exposed thermal pad occupying pins 7 and 8 per TI's mechanical drawing DQK0006C. This pad must be soldered to a dedicated PCB thermal land connected to internal ground or power planes to achieve the specified RθJA = 65°C/W.
How does the avalanche energy rating of CSD17318Q2T impact system reliability?
The CSD17318Q2T specifies 7.7 mJ single-pulse avalanche energy (EAS) under test conditions of ID = 12.4 A, L = 0.1 mH, and RG = 25 Ω. This rating ensures robustness against inductive kickback in hot-swap and motor-drive front-end circuits, preventing catastrophic failure during transient overvoltage events.
Is CSD17318Q2T RoHS and halogen-free compliant?
Yes - the CSD17318Q2T is certified RoHS compliant and halogen-free per IPC-J-STD-609 Class 1 standards (<900 ppm total Cl + Br), as confirmed in TI's official packaging addendum and material declaration documents dated November 2024.
CSD17318Q2T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 6-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 8V
- Rds On (Max) @ Id, Vgs:
- 15.1mOhm @ 8A, 8V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6 nC @ 4.5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 879 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 16W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WSON (2x2)
CSD17318Q2T FAQ
1.How can I place an order for CSD17318Q2T through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD17318Q2T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD17318Q2T reliable?
The price and inventory of CSD17318Q2T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17318Q2T is usually 5 days.
3.What payment methods are accepted for CSD17318Q2T?
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4.How is shipping managed for CSD17318Q2T?
CSD17318Q2T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD17318Q2T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD17318Q2T?
For technical support, including CSD17318Q2T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17318Q2T requirements.
6.How does Aetrix verify that CSD17318Q2T is sourced from the original manufacturer or authorized distributors?
All CSD17318Q2T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17318Q2T meets industry standards.
7.What is the process for return or replacement of CSD17318Q2T?
All CSD17318Q2T units undergo pre-shipment inspection (PSI). If there is an issue with CSD17318Q2T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD17318Q2T part is unused and in its original packaging.
Return procedure for CSD17318Q2T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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