Texas Instruments CSD17322Q5A

Overview

CSD17322Q5A from Texas Instruments is a 30V, N-channel NexFET™ power MOSFET in a thermally enhanced 5-mm × 6-mm VSONP (DQJ) package with 8 terminals, optimized for 5V gate drive, featuring 7.3 mΩ R_DS(on) at V_GS = 8V and 3.6 nC total gate charge - deployed in notebook point-of-load synchronous buck converters.

For engineers reviewing the CSD17322Q5A datasheet, CSD17322Q5A pinout, CSD17322Q5A application, or CSD17322Q5A equivalent, key selection criteria include low Q_g/Q_gd for high-frequency switching efficiency, avalanche rating for robustness in inductive switching, and thermal resistance (R_θJC = 1.8°C/W) enabling high-current operation on compact PCBs.

Technical Context

This MOSFET uses a trench-gate silicon process to achieve ultralow gate charge (Q_g = 3.6 nC typ, Q_gd = 1.1 nC) and fast switching (t_d(on) = 6.7 ns, t_f = 3.7 ns), minimizing conduction and switching losses in high-frequency DC-DC converters. Its 1.6 V threshold voltage ensures reliable turn-on with standard 5V logic-level drivers.

The device integrates an intrinsic body diode with low forward voltage (V_SD = 0.85 V at 14 A) and controlled reverse recovery (Q_rr = 19.6 nC, t_rr = 17.8 ns), supporting synchronous rectification without external Schottky diodes. It is rated for unclamped inductive switching (E_AS = 54 mJ) and operates across –55°C to +150°C junction temperature.

Key Specifications

Pinout & Package

Package: VSONP (DQJ), 5 mm × 6 mm plastic package with exposed thermal pad (pin 1–8 layout per TI mechanical drawing M0135-01). Pin 1 is Gate, pins 2–4 and 6–8 are Source, pin 5 is Drain - configured for low-inductance, high-current source return paths and optimal thermal transfer via bottom-side copper pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BSC010N03LS and Si7850DP, the CSD17322Q5A delivers best-in-class gate charge efficiency (3.6 nC) and thermal interface (1.8°C/W) in its 5×6mm footprint - making it optimal for high-density, high-frequency POL where both switching loss and thermal dissipation are design bottlenecks.

Availability

CSD17322Q5A is available at Aetrix Electronics and suitable for notebook point-of-load, networking synchronous buck, and industrial PLC power supply applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for CSD17322Q5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management ICs, with leadership in high-efficiency power conversion solutions.

The CSD17322Q5A belongs to TI's NexFET™ power MOSFET family, engineered specifically for high-frequency, high-efficiency DC-DC conversion in space- and thermally constrained applications like portable computing and communications infrastructure.

FAQ

What is the maximum continuous drain current for CSD17322Q5A at 25°C case temperature?

The CSD17322Q5A supports 87 A continuous drain current when mounted on a 1-inch² 2-oz copper pad (TC = 25°C), per its absolute maximum ratings. At ambient conditions (TA = 25°C), the derated limit is 16 A due to R_θJA = 51°C/W. For sustained 16 A operation, ensure adequate PCB copper area and airflow to maintain junction temperature below 150°C.

Does CSD17322Q5A require a gate resistor for stability in synchronous buck applications?

Yes - although CSD17322Q5A has low intrinsic gate resistance (4.7 Ω), a discrete 2–5 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance and driver output impedance. TI's SLPA005 application note confirms this for 5×6mm QFN layouts; omitting it risks shoot-through or EMI in high-dV/dt switching nodes.

Is CSD17322Q5A pin-compatible with other devices in the CSD173xxQ5A family?

No - the CSD17322Q5A shares the same VSONP (DQJ) 8-pin package with other CSD173xxQ5A parts (e.g., CSD17313Q2), but pin functions differ: CSD17322Q5A places Drain on pin 5, while CSD17313Q2 places Drain on pins 1 and 8. Swapping them without PCB revision will cause functional failure.

What is the safe operating area (SOA) limitation for CSD17322Q5A at 100°C case temperature?

At TC = 100°C, the CSD17322Q5A SOA is limited by thermal constraints to ~45 A at V_DS = 10 V (per Figure 11 in SLPS330), with pulse width < 10 ms. Beyond that, conduction loss exceeds thermal dissipation capability. For DC operation above 16 A, active cooling or derating below 100°C case is required.

Can CSD17322Q5A be used with 3.3V gate drive in partial-enhancement mode?

Yes - at V_GS = 3.3V, the CSD17322Q5A achieves R_DS(on) ≈ 18 mΩ (from Figure 8), enabling use in low-duty-cycle or low-current auxiliary rails. However, full 5V drive is required to meet datasheet-specified 7.3 mΩ and 3.6 nC Q_g; 3.3V operation increases conduction loss by >140% and may trigger thermal runaway under sustained load.