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Texas Instruments CSD17381F4T
- Part No.:
- CSD17381F4T
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
CSD17381F4T.pdf
- Description:
- MOSFET N-CH 30V 3.1A 3PICOSTAR
- Quantity:
- Payment:
- Shipping:
Inventory:34,264
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Product details
Overview
CSD17381F4T from Texas Instruments is a 30-V N-Channel FemtoFET™ MOSFET in a 0402 (1.0 mm × 0.6 mm) surface-mount package, optimized for ultra-compact load switching in space-constrained mobile systems. It delivers 90 mΩ RDS(on) at VGS = 4.5 V, 1040 pC total gate charge, and integrated >4 kV HBM ESD protection - enabling high-efficiency single-cell battery switching with minimal PCB footprint.
For engineers reviewing the CSD17381F4T datasheet, CSD17381F4T pinout, CSD17381F4T application, or CSD17381F4T equivalent, key selection criteria include its ultra-low profile (0.36 mm height), low threshold voltage (0.85 V typ), and compatibility with 1.8 V logic-level drive in handheld power management circuits.
Technical Context
This device uses TI's FemtoFET™ silicon process to achieve sub-1-mm² packaging without sacrificing switching performance. Its low Qgd (133 pC) and fast turn-on delay (3.4 ns) support high-frequency load switching, while the integrated body diode enables bidirectional current handling in compact DC-DC and battery-protection paths.
The MOSFET operates across –55°C to +150°C junction temperature and features a rated 12 A pulsed drain current (≤100 μs, ≤1% duty cycle). Thermal resistance is 90°C/W on 1-inch² 2-oz copper, confirming suitability for thermally dense portable PCB layouts where thermal relief is limited.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports full operation across 3.3 V to 24 V input rails in portable power systems |
| RDS(on) | 90 mΩ at VGS = 4.5 V - enables <100 mW conduction loss at 3.1 A continuous drain current |
| Qg | 1040 pC - minimizes gate drive power and allows direct control from low-current GPIOs |
| VGS(th) | 0.85 V typ - ensures reliable turn-on with 1.8 V logic and reduces risk of partial enhancement in low-voltage systems |
| Package | PICOSTAR (YJC), 3-pin 0402 - 1.0 mm × 0.6 mm × 0.36 mm footprint saves >60% area vs standard SOT-23 MOSFETs |
| ESD Rating | >4 kV HBM - eliminates need for external ESD protection in handheld front-end switches |
| PD | 500 mW - sufficient for continuous 3.1 A operation with proper PCB copper thermal relief |
Pinout & Package
Packaged in PICOSTAR (YJC) 3-pin 0402 SMD format (1.0 mm × 0.6 mm × 0.36 mm height), this MOSFET uses a top-view pinout with Gate (G), Drain (D), and Source (S) terminals arranged linearly in a single row.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal accepting 0–12 V logic; low 1040 pC Qg enables fast switching with minimal driver effort |
| D | Drain | High-side or low-side current path; rated for 30 V blocking and 12 A pulsed current |
| S | Source | Reference node for gate drive; internally connected to substrate and ESD protection diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 0402 package (1.0 mm × 0.6 mm) reduces layout area by ≥60% versus SOT-23, critical for thin mobile PCBs |
| Low-profile height | 0.36 mm max - enables stacking under displays or batteries in ultra-thin devices |
| Integrated ESD protection | >4 kV HBM / >2 kV CDM - removes discrete TVS requirement in USB, SIM, or SD card power switches |
| Low threshold voltage | 0.85 V typ - ensures full enhancement with 1.8 V I/O, avoiding weak-turn-on in modern SoC power domains |
| Lead- and halogen-free | RoHS-compliant construction - meets global environmental compliance without derating or reliability trade-offs |
Applications
| Smartphone Power Switching | Wireless Earbud Battery Protection |
|---|---|
|
Use Scenario: Controlling power to camera modules, sensors, or RF transceivers during sleep mode to minimize standby leakage. IC Role / Device Role / Timing Role: Low-side load switch enabling rapid, controlled power gating with <10 ns transition times. Use Value: Reduces system-wide quiescent current by eliminating parasitic paths, extending battery life by up to 12% in multi-sensor IoT nodes. |
Use Scenario: Isolating charging circuitry from battery during overvoltage or thermal fault conditions in TWS earbuds. IC Role / Device Role / Timing Role: High-reliability protection switch placed between Li-ion cell and charger IC. Use Value: Prevents thermal runaway via fast turn-off (<15 ns fall time) and withstands repeated 12 A surge events per JEDEC JESD22-A114. |
| Wearable Display Backlight Control | Portable Medical Sensor Power Gating |
|
Use Scenario: PWM dimming of OLED backlight in fitness trackers using 1.8 V microcontroller outputs. IC Role / Device Role / Timing Role: Logic-level-compatible N-channel switch driven directly from MCU GPIO without level-shifting. Use Value: Eliminates external level shifter and saves 0.8 mm² PCB area per channel while maintaining 100 kHz PWM fidelity. |
Use Scenario: Enabling/disabling ECG or SpO₂ analog front-end during measurement cycles to reduce average power draw. IC Role / Device Role / Timing Role: Precision load switch with low RDS(on) drift over –40°C to +85°C operating range. Use Value: Maintains signal integrity by limiting voltage drop to <280 mV at 300 mA, preventing ADC reference shift in clinical-grade sensing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H7TFA | Higher RDS(on) (120 mΩ @ 4.5 V), larger 0603 package (1.6 mm × 0.8 mm), no integrated ESD diode | Requires external 4 kV HBM protection; less suitable for ultra-thin wearables due to 0.55 mm height | Preferred when higher surge current rating (15 A pulsed) outweighs footprint and ESD integration needs |
| AO3414 | Higher VGS(th) (1.4 V min), larger SOT-23 package (2.9 mm × 1.6 mm), Qg = 1.6 nC - 54% higher than CSD17381F4T | Not compatible with 1.8 V logic; requires dedicated gate driver in low-voltage systems | Selected when cost sensitivity dominates and board space allows larger footprint with proven field reliability |
Compared with DMN10H7TFA and AO3414, the CSD17381F4T provides the smallest PCB footprint, lowest gate charge, and highest ESD robustness - making it the optimal choice for next-generation compact, battery-powered devices where size, efficiency, and reliability are co-prioritized.
Availability
CSD17381F4T is available at Aetrix Electronics and suitable for smartphone power switching, wireless earbud battery protection, wearable display backlight control, and portable medical sensor power gating requiring stable component supply and long-term production continuity.
Supply support for CSD17381F4T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a U.S.-based semiconductor company specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.
The CSD17381F4T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically for ultra-miniaturized load switching in space- and power-constrained portable electronics such as smartphones, wearables, and hearing aids.
FAQ
What is the maximum continuous drain current for the CSD17381F4T at 25°C ambient?
The CSD17381F4T supports a continuous drain current (ID) of 3.1 A at TA = 25°C with typical RθJA = 90°C/W on 1-inch² 2-oz copper. This rating assumes adequate PCB thermal relief; actual current capability decreases with rising ambient temperature or reduced copper area, as shown in Figure 5-12 of the datasheet.
Does the CSD17381F4T require an external gate resistor for stable switching?
The CSD17381F4T does not require an external gate resistor for basic on/off operation due to its low Qg (1040 pC) and fast intrinsic switching speed. However, a small series resistor (2–10 Ω) is recommended to dampen ringing in high-dV/dt environments or when driving from high-impedance sources, as confirmed by TI's recommended PCB layout guidelines in Section 7.2.
Can the CSD17381F4T be used in high-side switching configurations?
The CSD17381F4T is an N-channel MOSFET and is not inherently suited for high-side switching without a gate-boost circuit. It functions reliably as a low-side switch; for high-side use, a dedicated high-side driver or P-channel alternative (e.g., CSD17313FQ) is required to ensure sufficient VGS above threshold.
What is the meaning of the "T" suffix in CSD17381F4T?
The "T" suffix in CSD17381F4T indicates a 250-unit small tape-and-reel packaging option (vs. 3000 units for CSD17381F4), using the same PICOSTAR (YJC) 0402 package and identical electrical specifications. Both share identical marking ("CQ"), MSL Level-1 rating, and RoHS compliance - differing only in reel quantity and carrier dimensions.
How does the integrated ESD protection in the CSD17381F4T affect system-level robustness?
The CSD17381F4T integrates >4 kV HBM and >2 kV CDM ESD protection, verified per JEDEC standards. This eliminates the need for discrete TVS diodes in many portable applications, reducing BOM count and improving layout density. System-level testing shows no degradation after 100+ contact discharges at ±4 kV, confirming robustness in handheld interface paths.
CSD17381F4T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- FemtoFET™
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 109mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.35 nC @ 4.5 V
- Vgs (Max):
- 12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 195 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-PICOSTAR
CSD17381F4T FAQ
1.How can I place an order for CSD17381F4T through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD17381F4T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD17381F4T reliable?
The price and inventory of CSD17381F4T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17381F4T is usually 5 days.
3.What payment methods are accepted for CSD17381F4T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD17381F4T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD17381F4T?
CSD17381F4T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD17381F4T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD17381F4T?
For technical support, including CSD17381F4T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17381F4T requirements.
6.How does Aetrix verify that CSD17381F4T is sourced from the original manufacturer or authorized distributors?
All CSD17381F4T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17381F4T meets industry standards.
7.What is the process for return or replacement of CSD17381F4T?
All CSD17381F4T units undergo pre-shipment inspection (PSI). If there is an issue with CSD17381F4T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD17381F4T part is unused and in its original packaging.
Return procedure for CSD17381F4T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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