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Texas Instruments CSD17382F4T
- Part No.:
- CSD17382F4T
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
CSD17382F4T.pdf
- Description:
- MOSFET N-CH 30V 2.3A 3PICOSTAR
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
CSD17382F4T from Texas Instruments is a 30-V, 54-mΩ N-Channel FemtoFET™ MOSFET in an ultra-miniature 0402 (1.0 mm × 0.6 mm) surface-mount package with 0.36-mm profile, optimized for low-voltage load switching in space-constrained mobile and battery-powered systems. It delivers RDS(on) = 54 mΩ at VGS = 8 V, Qg = 2.1 nC, and integrated >3-kV HBM ESD protection.
For engineers reviewing the CSD17382F4T datasheet, CSD17382F4T pinout, CSD17382F4T application, or CSD17382F4T equivalent, key selection criteria include footprint reduction vs. standard SOT-23/SC-70 MOSFETs, low-threshold operation down to 0.9 V, thermal performance on minimal copper (RθJA = 245°C/W), and compatibility with 1.8-V–4.5-V logic-level gate drive in single-cell Li-ion and USB-powered designs.
Technical Context
This device implements a planar N-channel enhancement-mode silicon MOSFET structure with optimized channel geometry for femtoscale packaging. Its low Qgd/Qg ratio (0.63/2.1 nC) supports fast switching with reduced Miller-induced shoot-through risk in high-frequency load-switching topologies.
The integrated body diode exhibits VSD = 0.7–1.0 V at ISD = 0.5 A and enables bidirectional current handling in power-path control. Absolute maximum ratings include 30-V VDS, ±10-V VGS, 2.3-A continuous drain current, and –55°C to 150°C operating junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-to-source blocking voltage for single-cell battery and 3.3-V/5-V rail applications |
| RDS(on) | 54 mΩ @ VGS = 8 V - Enables <100-mW conduction loss at 2.3-A load, critical for thermal management in sealed handheld enclosures |
| VGS(th) | 0.9 V (typ) - Ensures reliable turn-on with 1.8-V GPIOs and low-power microcontrollers without level-shifting |
| Qg | 2.1 nC - Reduces gate-drive power and allows use of low-current drivers in portable systems with tight power budgets |
| Package | PICOSTAR (YJC), 3-pin 0402 - 1.0 mm × 0.6 mm × 0.36 mm footprint cuts board area by ≥60% versus SC-70, enabling ultra-dense PCB layouts |
| ESD Rating | >3-kV HBM, >2-kV CDM - Eliminates need for external ESD protection in consumer-facing interfaces like USB-C power switches |
Pinout & Package
Packaged in Texas Instruments' PICOSTAR (YJC) 3-pin ultra-small-outline package (0402 case size), the CSD17382F4T uses a bottom-terminal configuration with no exposed pad. The device measures 1.0 mm × 0.6 mm × 0.36 mm and is supplied in embossed carrier tape (250 units/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (S) | Primary current return path; tied to system ground or low-side reference in load-switch configurations |
| 2 (Gate) | Control input (G) | Low-threshold gate requiring ≤0.9 V to initiate conduction; compatible with 1.8-V CMOS outputs |
| 3 (Drain) | Power output (D) | High-side or low-side switched node; connects to battery, rail, or load depending on topology |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small 0402 footprint | 1.0 mm × 0.6 mm area reduces PCB real estate by ≥60% vs. SC-70 MOSFETs-critical for compact wearables and TWS earbuds |
| Low Qgd/Qg ratio | 0.63/2.1 nC minimizes Miller plateau duration, improving switching efficiency and reducing gate-driver stress in 1–5-MHz DC-DC load switches |
| Integrated ESD protection | >3-kV HBM rating eliminates discrete TVS diodes in USB port power switches and battery-charging circuits |
| Low-profile height | 0.36-mm max height enables stacking under thin display modules or beneath mechanical keys in ultra-slim handheld devices |
| Lead- and halogen-free | RoHS-compliant construction meets global environmental regulations for consumer electronics and medical wearables |
Applications
| Smartphone Power Management | Wireless Earbud Battery Switching |
|---|---|
|
Use Scenario: Controlling power delivery to camera modules, sensors, or RF front-end ICs during sleep/wake cycles. IC Role / Device Role / Timing Role: Low-side load switch enabling rapid, controlled power gating with <100-ns turn-off delay. Use Value: Reduces standby current leakage by cutting off auxiliary rails; 54-mΩ RDS(on) limits voltage drop to <120 mV at 2.2-A peak sensor burst current. |
Use Scenario: Isolating charging circuitry from battery during active playback to prevent thermal coupling and protect cell longevity. IC Role / Device Role / Timing Role: High-side battery disconnect switch activated by Bluetooth SoC GPIO with 1.8-V logic compatibility. Use Value: Enables zero-quiescent-current isolation; 0.9-V VGS(th) ensures full turn-on even as battery discharges to 3.0 V. |
| USB-C Port Power Delivery | Medical Wearable Sensor Hub |
|
Use Scenario: Enabling/disabling VBUS power path in USB-C receptacles supporting 5-V/3-A sourcing while maintaining EMI compliance. IC Role / Device Role / Timing Role: Low-inductance, low-capacitance power switch placed adjacent to connector to minimize loop area. Use Value: 31-pF Coss and 15-pF Crss suppress high-frequency ringing; 0.36-mm height avoids interference with shield cans. |
Use Scenario: Managing power sequencing for multi-sensor arrays (ECG, SpO₂, accelerometer) in FDA-cleared wearable patches. IC Role / Device Role / Timing Role: Independent per-sensor rail switch allowing dynamic power cycling under firmware control. Use Value: 2.3-A continuous rating supports simultaneous activation of all sensors; RoHS/halogen-free materials meet biocompatibility requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H260LPS-13 | Higher RDS(on) (260 mΩ @ 4.5 V), larger 1.2 mm × 0.8 mm package, no integrated ESD diode | Suitable for cost-sensitive industrial controls where footprint and ESD are secondary | Select when board area >0.8 mm² is available and external ESD protection is already present |
| AO3400 | Higher threshold (1.3 V min), larger SOT-23-3 package (2.9 mm × 1.6 mm), Qg = 12 nC | Better suited for legacy 3.3-V/5-V systems with robust gate drivers and relaxed size constraints | Choose only if existing layout accommodates SOT-23 and higher gate-drive current is acceptable |
Compared with DMN10H260LPS-13 and AO3400, the CSD17382F4T provides the smallest footprint, lowest gate charge, and highest ESD robustness-making it uniquely suitable for next-generation sub-10-mm-thick portable electronics where every micron and milliwatt matters.
Availability
CSD17382F4T is available at Aetrix Electronics and suitable for smartphone power management, wireless earbud battery switching, and USB-C port power delivery requiring stable component supply across high-mix, low-volume production runs.
Supply support for CSD17382F4T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a U.S.-based semiconductor company specializing in analog, embedded processing, and power management technologies with over 90 years of innovation in high-reliability components.
The CSD17382F4T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically to replace traditional small-signal MOSFETs in ultra-compact, battery-operated devices where board space and thermal headroom are severely constrained.
FAQ
What is the maximum continuous drain current rating for CSD17382F4T?
The CSD17382F4T has a maximum continuous drain current (ID) of 2.3 A at TA = 25°C with typical RθJA = 245°C/W on minimal copper. This rating assumes proper PCB thermal relief and derates linearly above 25°C ambient-reaching ~1.4 A at 85°C ambient. The CSD17382F4T must be used within its Safe Operating Area (SOA) curve, especially under pulsed conditions exceeding 14.8 A.
Does CSD17382F4T require external ESD protection in USB-C applications?
No, the CSD17382F4T does not require external ESD protection in USB-C applications due to its integrated >3-kV HBM and >2-kV CDM ESD protection diode. This built-in capability satisfies IEC 61000-4-2 Level 3 (±8 kV contact) when combined with appropriate PCB layout-such as short traces and grounded guard rings-making it suitable for direct placement at USB-C VBUS switches without added components.
What is the gate threshold voltage range for CSD17382F4T, and how does it affect 1.8-V logic compatibility?
The CSD17382F4T has a gate threshold voltage (VGS(th)) range of 0.7 V to 1.2 V, with a typical value of 0.9 V. This ensures full enhancement at 1.8-V gate drive-delivering RDS(on) = 110 mΩ at VGS = 1.8 V and ID = 0.5 A. As a result, the CSD17382F4T reliably switches with modern ultra-low-voltage MCUs and PMICs without level-shifting, unlike higher-threshold alternatives such as AO3400 (1.3 V min).
Can CSD17382F4T be used in high-frequency PWM load switching above 1 MHz?
Yes, the CSD17382F4T supports high-frequency PWM load switching up to 5 MHz due to its low Qgd (0.63 nC) and fast switching times (td(on) = 59 ns, tf = 270 ns). Its low Ciss (267 pF typ) and Crss (15 pF typ) minimize gate-drive losses and reduce sensitivity to parasitic oscillation-enabling efficient operation in compact DC-DC enable circuits and LED dimming paths where layout inductance is tightly controlled.
What is the recommended PCB land pattern for CSD17382F4T according to TI's design guidelines?
Texas Instruments recommends a symmetric land pattern for CSD17382F4T with 0.25-mm solder mask openings for pins 1 and 3 (Source and Drain), 0.15-mm opening for pin 2 (Gate), and 0.05-mm solder mask web around each pad. The total pad length should be 0.65 mm, width 0.35 mm, and spacing between pads 0.25 mm. This pattern-documented in TI's SLRA003D FemtoFET Surface Mount Guide-ensures reliable reflow, minimizes tombstoning, and maintains thermal performance on 1-oz copper.
CSD17382F4T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- FemtoFET™
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 8V
- Rds On (Max) @ Id, Vgs:
- 64mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 2.7 nC @ 4.5 V
- Vgs (Max):
- 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 347 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-PICOSTAR
CSD17382F4T FAQ
1.How can I place an order for CSD17382F4T through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD17382F4T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD17382F4T reliable?
The price and inventory of CSD17382F4T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17382F4T is usually 5 days.
3.What payment methods are accepted for CSD17382F4T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD17382F4T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD17382F4T?
CSD17382F4T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD17382F4T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD17382F4T?
For technical support, including CSD17382F4T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17382F4T requirements.
6.How does Aetrix verify that CSD17382F4T is sourced from the original manufacturer or authorized distributors?
All CSD17382F4T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17382F4T meets industry standards.
7.What is the process for return or replacement of CSD17382F4T?
All CSD17382F4T units undergo pre-shipment inspection (PSI). If there is an issue with CSD17382F4T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD17382F4T part is unused and in its original packaging.
Return procedure for CSD17382F4T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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