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Texas Instruments CSD17501Q5A
- Part No.:
- CSD17501Q5A
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
CSD17501Q5A.pdf
- Description:
- MOSFET N-CH 30V 100A 8VSON
- Quantity:
- Payment:
- Shipping:
Inventory:6,704
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Product details
Overview
CSD17501Q5A from Texas Instruments is a 30V, N-channel NexFET™ power MOSFET in an 8-pin SON 5-mm × 6-mm package, optimized as a synchronous FET in high-efficiency DC-DC converters. It delivers RDS(on) = 2.4 mΩ at VGS = 10 V and 25 A, Qg = 13.2 nC, and features avalanche rating (EAS = 405 mJ), enabling robust operation in point-of-load buck stages for telecom and computing systems.
For engineers reviewing the CSD17501Q5A datasheet, CSD17501Q5A pinout, CSD17501Q5A application, or CSD17501Q5A equivalent, key selection criteria include low gate charge for fast switching, thermal resistance RθJC = 1°C/W for high-power density layouts, and verified performance at 125°C junction temperature in synchronous rectification roles.
Technical Context
This MOSFET uses silicon-based planar trench technology with optimized gate oxide thickness and channel doping to achieve ultralow Qg and Qgd, reducing switching losses in high-frequency synchronous buck converters. Its low RDS(on) and high pulsed drain current (IDM = 187 A) support high peak load handling without thermal runaway.
The device integrates a body diode with VSD = 0.8 V at 25 A and Qrr = 46 nC, enabling efficient reverse recovery in hard-switched topologies. Thermal design is anchored by RθJC = 1°C/W and RθJA = 49°C/W on standard FR4, supporting compact PCB layouts with minimal copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24-V input bus architectures and 12-V intermediate bus systems. |
| RDS(on) @ VGS = 10 V | 2.4 mΩ - Enables <1.5 W conduction loss at 25 A continuous drain current in high-current POL stages. |
| Qg | 13.2 nC - Reduces gate drive power and enables >1 MHz switching in digitally controlled VRMs without excessive driver heating. |
| ID (continuous, TC = 25°C) | 100 A - Supports high-current single-phase or paralleled multi-phase designs with derating for ambient conditions. |
| EAS | 405 mJ - Withstands unclamped inductive switching events up to IAV = 90 A, enhancing system reliability during fault transients. |
| RθJC | 1°C/W - Allows direct thermal coupling to heatsinks or copper planes, enabling >75 W dissipation with ≤75°C case-to-junction rise. |
| VGS(th) | 1.3 V (typ) - Ensures clean turn-on with 3.3-V or 5-V gate drivers, minimizing shoot-through risk in synchronous pairs. |
Pinout & Package
Package: VSONP (DQJ) 8-pin, 5 mm × 6 mm plastic QFN with exposed thermal pad (top view: pins 1–4 = Drain, 5 = Gate, 6–8 = Source). Designed for low-inductance layout and high thermal transfer via bottom-side thermal pad soldered to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4 | Drain | High-current output node; electrically and thermally tied to internal die drain metallization and exposed pad. |
| 5 | Gate | Control input requiring <13.2 nC charge; sensitive to ESD-must be protected per TI's handling guidelines. |
| 6–8 | Source | Power return path and reference for gate drive; multiple pins reduce source inductance and improve current sharing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultralow Qg and Qgd | 13.2 nC total / 3.5 nC gate-to-drain charge minimizes Miller-induced switching delay and dv/dt-induced false turn-on. |
| Avalanche rated | 405 mJ single-pulse energy withstand enables reliable operation under inductive load dump or startup overcurrent without external snubbers. |
| Low RθJC | 1°C/W junction-to-case thermal resistance supports high-power density designs with direct thermal interface to heatsink or copper plane. |
| Optimized for synchronous FET use | Body diode Qrr = 46 nC and trr = 32 ns enable efficient freewheeling with minimal reverse recovery loss in buck topologies. |
| RoHS-compliant, halogen-free | Meets IPC-1752A material declaration requirements and JEDEC J-STD-609A Class 1 marking for lead-free assembly compatibility. |
Applications
| Point-of-Load Synchronous Buck Converter | Server VRM High-Side Switch |
|---|---|
Use Scenario: 12-V input to 1.0–1.8-V output conversion delivering up to 100 A in AI accelerator card power delivery. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500 kHz–1 MHz with gate drive referenced to source. Use Value: 2.4 mΩ RDS(on) and 13.2 nC Qg reduce conduction + switching losses to <1.2 W at full load, improving system efficiency by ≥1.8% vs. legacy MOSFETs. |
Use Scenario: Primary switch in multiphase 48-V-to-12-V intermediate bus converter for rack-scale servers. IC Role / Device Role / Timing Role: High-side switching FET with fast turn-on (td(on) = 10.4 ns) and low Qgd/Qg ratio for reduced Miller plateau time. Use Value: 3.5 nC Qgd limits voltage-dependent switching delay, enabling precise dead-time control and minimizing shoot-through risk at 300 kHz. |
| Telecom Base Station Power Supply | Industrial PLC DC-DC Module |
Use Scenario: 48-V input to 5-V/3.3-V auxiliary rail generation in outdoor macro base station cabinets with -40°C to +85°C ambient. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated forward converter secondary side, operating with zero-voltage switching assist. Use Value: Avalanche rating (EAS = 405 mJ) ensures survival during line surges and transformer leakage energy spikes without clamping diodes. |
Use Scenario: Compact 24-V input to 5-V isolated DC-DC module for programmable logic controller I/O modules with space-constrained PCBs. IC Role / Device Role / Timing Role: Low-side switch in non-isolated buck regulator powering microcontroller and sensor interfaces. Use Value: RθJA = 49°C/W on 1-in² Cu allows full 28-A continuous rating without forced air, eliminating need for heatsinks in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPBF | RDS(on) = 2.3 mΩ @ 10 V but Qg = 17.5 nC; larger 5×6 mm PQFN package with different pinout (G-D-S-D-D-S-D-S). | Higher gate charge increases driver loss and limits max frequency in 1-MHz+ designs; not pin-compatible due to shifted gate position. | Select only if board redesign accommodates alternate pinout and thermal pad layout; verify gate drive strength for higher Qg. |
| SiR872DP-T1-GE3 | RDS(on) = 2.0 mΩ @ 10 V but Qg = 22.5 nC; 5×6 mm PowerPAK SO-8 with 4 drain/3 source pins, no exposed thermal pad. | Lacks thermal pad → RθJA = 62°C/W → 30% lower power handling at same board area; unsuitable for >60 A continuous loads. | Prefer only for cost-sensitive, lower-current (<40 A) applications where thermal pad integration is impractical. |
Compared with IRF6642TRPBF and SiR872DP-T1-GE3, the CSD17501Q5A offers the best balance of low Qg and low RDS(on) in a thermally optimized QFN, enabling higher efficiency and smaller form factor in high-current, high-frequency POL converters without compromising avalanche ruggedness.
Availability
CSD17501Q5A is available at Aetrix Electronics and suitable for point-of-load synchronous buck converters, server VRMs, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and infrastructure programs.
Supply support for CSD17501Q5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in high-efficiency power conversion solutions.
The CSD17501Q5A belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-current synchronous rectification in next-generation DC-DC converters for datacenter, networking, and computing applications.
FAQ
What is the maximum continuous drain current rating for CSD17501Q5A at 100°C case temperature?
The CSD17501Q5A supports 100 A continuous drain current at TC = 25°C, derating linearly to approximately 62 A at TC = 100°C based on its RθJC = 1°C/W and PD = 3.2 W limit. This derating ensures safe operation within the 150°C maximum junction temperature across industrial temperature ranges.
Does CSD17501Q5A require a gate resistor for stable operation in a 1-MHz synchronous buck converter?
Yes - while the CSD17501Q5A has low Qg (13.2 nC), a gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by parasitic Lg and Ciss, especially when driven by high-speed controllers like TI's UCD7242. The datasheet confirms stable switching with RG = 2 Ω in dynamic test conditions.
Can CSD17501Q5A be used as a high-side switch with bootstrap gate drive?
Yes - the CSD17501Q5A supports high-side operation with bootstrap gate drive, as confirmed by its ±20 V VGS rating and 30 V VDS rating. Its 1.3 V VGS(th) ensures reliable turn-on with typical 12-V bootstrap voltages, and low Qgd prevents Miller-induced false turn-on during high dv/dt transitions.
What is the thermal pad soldering requirement for CSD17501Q5A to achieve RθJC = 1°C/W?
To achieve the specified RθJC = 1°C/W, the CSD17501Q5A's exposed thermal pad must be soldered to a minimum 1-inch² (6.45 cm²), 2-oz. copper pad on FR4 PCB using the recommended stencil opening (0.630 mm × 4.460 mm) and paste volume per TI's SLPS303B datasheet. Incomplete thermal pad soldering increases RθJC significantly.
Is CSD17501Q5A suitable for automotive applications per AEC-Q101?
No - the CSD17501Q5A is not AEC-Q101 qualified. It is rated for –55°C to +150°C operating junction temperature and intended for industrial, computing, and telecom applications. For automotive use, TI recommends AEC-Q101-qualified alternatives such as CSD17573Q5M or CSD17579Q5A.
CSD17501Q5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2630 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VSONP (5x6)
CSD17501Q5A FAQ
1.How can I place an order for CSD17501Q5A through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD17501Q5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD17501Q5A reliable?
The price and inventory of CSD17501Q5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17501Q5A is usually 5 days.
3.What payment methods are accepted for CSD17501Q5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD17501Q5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD17501Q5A?
CSD17501Q5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD17501Q5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD17501Q5A?
For technical support, including CSD17501Q5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17501Q5A requirements.
6.How does Aetrix verify that CSD17501Q5A is sourced from the original manufacturer or authorized distributors?
All CSD17501Q5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17501Q5A meets industry standards.
7.What is the process for return or replacement of CSD17501Q5A?
All CSD17501Q5A units undergo pre-shipment inspection (PSI). If there is an issue with CSD17501Q5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD17501Q5A part is unused and in its original packaging.
Return procedure for CSD17501Q5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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