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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Texas Instruments CSD17552Q3A

Name: CSD17552Q3A
Brand: Texas Instruments
SKU: CSD17552Q3A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CSD17552Q3A

Manufacturer:: Texas Instruments

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: CSD17552Q3A.pdf

Description:: MOSFET N-CH 30V 15A/60A 8SON

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Product details

Overview

CSD17552Q3A from Texas Instruments is a 30 V, 5.5 mΩ N-channel NexFET™ power MOSFET in an 8-pin SON (VSONP-DNH) package, optimized as a control FET in high-frequency synchronous buck converters for networking and telecom systems, delivering ultra-low Qg (9.0 nC) and Qgd (2.3 nC) to minimize switching losses.

For engineers reviewing the CSD17552Q3A datasheet, CSD17552Q3A pinout, CSD17552Q3A application, or CSD17552Q3A equivalent, key selection criteria include R_DS(on) at 4.5 V (6.5 mΩ), avalanche rating (45 mJ), thermal resistance (R_θJA = 60°C/W on 1-in² Cu), and SON 3.3 mm × 3.3 mm footprint compatibility with space-constrained POL designs.

Technical Context

The CSD17552Q3A employs a silicon-limited, trench-gate NexFET™ structure enabling low gate charge and fast switching-td(on) = 7.2 ns, tr = 7.4 ns-with integrated body diode (V_SD = 0.8 V at 11 A) suitable for synchronous rectification. Its 8-pin VSONP package features an exposed thermal pad for enhanced heat dissipation.

Designed specifically for control-FET operation in 30 V input POL converters, it operates across –55°C to 150°C junction temperature, supports ±20 V gate drive, and maintains stable R_DS(on) over temperature (normalized drift <1.2× from –55°C to 125°C at V_GS = 4.5 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V nominal input rails and transient margin.
R_DS(on) @ 4.5 V	6.5 mΩ - Enables efficient 12–24 V input, high-current control-FET operation without gate-boosting circuitry.
Q_g	9.0 nC - Reduces gate-drive power loss and enables >1 MHz switching in compact DC/DC modules.
Q_gd	2.3 nC - Minimizes Miller-induced switching delay and improves hard-switching robustness.
E_AS	45 mJ - Rated unclamped inductive avalanche energy supports reliable operation during load dump or shoot-through events.
R_θJA	60°C/W - Achievable with 1 in² 2-oz Cu pad; enables 15 A continuous current at T_A = 25°C without forced air.
V_GS(th)	1.5 V (typ) - Ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

Package: VSONP (DNH), 8-pin plastic no-lead with exposed thermal pad (3.3 mm × 3.3 mm, max height 0.9 mm); requires soldering of thermal pad to PCB for rated thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain	Internally paralleled drain terminals; connect directly to high-side switch node and thermal pad for low-inductance, low-resistance path.
6	Gate	Single gate input; low C_iss (1580–2050 pF) minimizes driver loading and EMI generation.
7, 8	Source	Dual source terminals; provide low-impedance return path for gate drive and sense; critical for stable Miller clamping.

Key Features

Feature	Design Value
Ultra-low Q_g and Q_gd	Reduces gate-drive loss and dv/dt-induced false turn-on risk in high-frequency synchronous buck topologies.
Low R_θJC (2.3°C/W)	Enables direct thermal coupling to heatsink or copper plane, supporting 60 A pulsed current (I_DM) without thermal runaway.
Avalanche-rated	Guarantees ruggedness under inductive switching stress without external snubbers in point-of-load applications.
SON 3.3 mm × 3.3 mm package	Provides 30% smaller footprint than SO-8 while maintaining comparable R_DS(on) and thermal performance.
Pb-free, RoHS, halogen-free	Meets IPC-J-STD-020 moisture sensitivity Level-1 (260°C peak reflow) and global environmental compliance requirements.

Applications

Server VRM Control FET	Telecom 48 V Intermediate Bus Converter
Use Scenario: High-efficiency, multi-phase 12 V input → 0.8–1.8 V output VRMs powering CPU/GPU in data center servers. IC Role / Device Role / Timing Role: Primary high-side control MOSFET in synchronous buck stage, switching at 500 kHz–1 MHz with precise dead-time control. Use Value: Ultra-low Q_gd (2.3 nC) reduces cross-conduction risk and improves light-load efficiency by minimizing gate drive loss.	Use Scenario: 48 V intermediate bus → 12 V or 5 V conversion in 5G base station power supplies with strict thermal constraints. IC Role / Device Role / Timing Role: Control FET in primary buck stage operating at 300–600 kHz, paired with low-side sync FET. Use Value: 6.5 mΩ R_DS(on) at 4.5 V enables use of 5 V gate drive, eliminating need for bootstrap or charge-pump circuitry.
Networking Switch ASIC Power Delivery	Industrial PLC I/O Module POL
Use Scenario: Compact 3.3 V or 5 V POL regulators feeding high-speed SerDes and packet processing ASICs in enterprise switches. IC Role / Device Role / Timing Role: Control FET in 30 V input buck converter where board area and thermal density are critical. Use Value: 3.3 mm × 3.3 mm SON package saves >40% PCB area vs. SO-8 while maintaining 15 A continuous current capability.	Use Scenario: Distributed 24 V → 3.3 V/5 V regulation for isolated digital I/O channels in programmable logic controllers. IC Role / Device Role / Timing Role: Control FET in non-isolated buck regulator requiring extended temperature operation (–40°C to 85°C ambient). Use Value: Stable V_GS(th) (1.1–1.9 V) and normalized R_DS(on) ensure consistent turn-on behavior across industrial temperature range.

Server VRM Control FET

Telecom 48 V Intermediate Bus Converter

Use Scenario: High-efficiency, multi-phase 12 V input → 0.8–1.8 V output VRMs powering CPU/GPU in data center servers.

IC Role / Device Role / Timing Role: Primary high-side control MOSFET in synchronous buck stage, switching at 500 kHz–1 MHz with precise dead-time control.

Use Value: Ultra-low Q_gd (2.3 nC) reduces cross-conduction risk and improves light-load efficiency by minimizing gate drive loss.

Use Scenario: 48 V intermediate bus → 12 V or 5 V conversion in 5G base station power supplies with strict thermal constraints.

IC Role / Device Role / Timing Role: Control FET in primary buck stage operating at 300–600 kHz, paired with low-side sync FET.

Use Value: 6.5 mΩ R_DS(on) at 4.5 V enables use of 5 V gate drive, eliminating need for bootstrap or charge-pump circuitry.

Networking Switch ASIC Power Delivery

Industrial PLC I/O Module POL

Use Scenario: Compact 3.3 V or 5 V POL regulators feeding high-speed SerDes and packet processing ASICs in enterprise switches.

IC Role / Device Role / Timing Role: Control FET in 30 V input buck converter where board area and thermal density are critical.

Use Value: 3.3 mm × 3.3 mm SON package saves >40% PCB area vs. SO-8 while maintaining 15 A continuous current capability.

Use Scenario: Distributed 24 V → 3.3 V/5 V regulation for isolated digital I/O channels in programmable logic controllers.

IC Role / Device Role / Timing Role: Control FET in non-isolated buck regulator requiring extended temperature operation (–40°C to 85°C ambient).

Use Value: Stable V_GS(th) (1.1–1.9 V) and normalized R_DS(on) ensure consistent turn-on behavior across industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel control-FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CSD17573Q5B	Higher R_DS(on) (9.3 mΩ @ 4.5 V), larger 5 mm × 6 mm SON package, higher Q_g (15.5 nC)	Better suited for lower-frequency, higher-current applications where thermal mass outweighs switching loss priority	Select when board layout allows larger footprint and system operates below 300 kHz.
SiR872DP	Same 30 V rating but higher Q_gd (3.7 nC), higher R_DS(on) (7.0 mΩ @ 4.5 V), different pinout (no exposed pad)	Lacks thermal pad; requires more complex thermal design and exhibits higher Miller-induced switching distortion	Choose only if legacy layout reuse prevents adoption of exposed-pad packages.

Compared with CSD17552Q3A, CSD17573Q5B trades switching efficiency for higher current handling in larger-area designs, while SiR872DP sacrifices thermal performance and Miller immunity for pinout compatibility with older SO-8 footprints-neither is pin-compatible with CSD17552Q3A.

Availability

CSD17552Q3A is available at Aetrix Electronics and suitable for point-of-load synchronous buck converters, telecom intermediate bus supplies, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for CSD17552Q3A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies with broad industrial, automotive, and communications reach.

The CSD17552Q3A belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-efficiency control-FET roles in compact DC/DC converters where low Q_g, low R_DS(on), and thermal density are critical.

FAQ

What is the maximum continuous drain current for the CSD17552Q3A at 25°C ambient temperature?

The CSD17552Q3A supports 15 A continuous drain current at T_A = 25°C with typical R_θJA = 60°C/W on a 1 in² 2-oz Cu PCB. This rating assumes proper thermal pad soldering and natural convection cooling; exceeding this current requires derating or active cooling per the SOA curve in Figure 4-10.

Does the CSD17552Q3A require a gate resistor for stable operation in a 500 kHz synchronous buck converter?

The CSD17552Q3A benefits from a small gate resistor (typically 1–5 Ω) to damp ringing and control dV/dt, especially given its low Q_gd (2.3 nC) and fast switching (tr = 7.4 ns). While not strictly required, a 2.2 Ω resistor is recommended to prevent oscillation and reduce EMI without significantly impacting efficiency.

Can the CSD17552Q3A be used as a synchronous rectifier (low-side FET) in addition to its control-FET role?

Yes-the CSD17552Q3A's low R_DS(on) (5.5 mΩ @ 10 V), low Q_rr (17 nC), and fast t_rr (15 ns) make it suitable as a synchronous rectifier in buck converters where gate drive is referenced to source. However, its optimized gate charge profile favors control-FET use; dedicated sync-FET variants may offer better body-diode recovery in high-dV/dt environments.

What is the recommended PCB land pattern for the CSD17552Q3A's exposed thermal pad?

Texas Instruments recommends a symmetrical 3.1 mm × 3.1 mm solder mask-defined thermal pad with 8× 0.3 mm diameter vias (0.25 mm annular ring) connecting to internal ground or thermal planes. The example layout in SLPS387C specifies 76% solder paste coverage on the exposed pad to balance voiding risk and thermal transfer-critical for achieving rated R_θJA.

Is the CSD17552Q3A qualified for automotive applications per AEC-Q101?

No-the CSD17552Q3A is not AEC-Q101 qualified. It is specified for industrial and computing applications with operating junction temperature from –55°C to 150°C, but lacks automotive-specific qualification testing (e.g., HTOL, UHAST, ESD). For automotive use, TI offers AEC-Q101-qualified NexFET™ variants such as CSD17578Q3A.

CSD17552Q3A Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: NexFET™

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2050 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.6W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-VSONP (3x3.3)

CSD17552Q3A FAQ

1.How can I place an order for CSD17552Q3A through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD17552Q3A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD17552Q3A reliable?

The price and inventory of CSD17552Q3A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17552Q3A is usually 5 days.

3.What payment methods are accepted for CSD17552Q3A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD17552Q3A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CSD17552Q3A?

CSD17552Q3A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD17552Q3A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD17552Q3A?

For technical support, including CSD17552Q3A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17552Q3A requirements.

6.How does Aetrix verify that CSD17552Q3A is sourced from the original manufacturer or authorized distributors?

All CSD17552Q3A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17552Q3A meets industry standards.

7.What is the process for return or replacement of CSD17552Q3A?

All CSD17552Q3A units undergo pre-shipment inspection (PSI). If there is an issue with CSD17552Q3A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD17552Q3A part is unused and in its original packaging.

Return procedure for CSD17552Q3A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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