Texas Instruments CSD17552Q5A

Overview

CSD17552Q5A from Texas Instruments is a 30-V, N-channel NexFET™ power MOSFET in an 8-pin VSONP (DQJ) package, optimized as a control FET in synchronous buck converters. It delivers R_DS(on) = 5.1 mΩ at V_GS = 10 V and 6.1 mΩ at V_GS = 4.5 V, with ultra-low gate charge (Q_g = 9.0 nC, Q_gd = 2.0 nC), enabling high-efficiency point-of-load regulation in telecom and computing systems.

For engineers reviewing the CSD17552Q5A datasheet, CSD17552Q5A pinout, CSD17552Q5A application, or CSD17552Q5A equivalent, key selection criteria include its low R_DS(on) at 4.5 V drive, avalanche-rated ruggedness (E_AS = 45 mJ), thermal resistance (R_θJC = 1.8 °C/W), and SON 5-mm × 6-mm footprint compatibility with high-density PCB layouts.

Technical Context

This MOSFET employs a silicon-limited design supporting continuous drain current up to 88 A and pulsed current up to 106 A, with gate threshold voltage V_GS(th) = 1.5 V (typical) and transconductance g_fs = 77 S at V_DS = 15 V, ID = 15 A. Its dynamic characteristics include C_iss = 2050 pF, C_oss = 500 pF, and Crss = 36 pF at V_GS = 0 V, V_DS = 15 V.

Thermal performance is characterized by R_θJA = 50 °C/W on standard FR4 and R_θJC = 1.8 °C/W, enabling high-power density operation. The device features integrated body diode with V_SD = 0.8 V at I_SD = 11 A and fast reverse recovery (t_rr = 18 ns, Q_rr = 20 nC) under di/dt = 300 A/μs conditions.

Key Specifications

Pinout & Package

Package: VSONP (DQJ), 8-pin, 5 mm × 6 mm plastic package with exposed thermal pad (JEDEC MO-229WEED). Pin 1 marked via top-side laser etch; bottom-side thermal pad soldered for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel control FET applications.

Compared with BSC014N04LS6 and NTMFS4C09NT1G, the CSD17552Q5A offers superior Q_gd/Q_g ratio (22%) and guaranteed avalanche ruggedness-making it preferred for high-frequency, high-reliability control FET roles where both efficiency and fault tolerance are critical.

Availability

CSD17552Q5A is available at Aetrix Electronics and suitable for point-of-load buck converters, server VRMs, telecom rectifier modules, and industrial PLC power stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for CSD17552Q5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in high-efficiency power conversion solutions.

The CSD17552Q5A belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-current control FET applications in computing, networking, and telecom infrastructure where low gate charge and thermal performance are essential.

FAQ

What is the maximum continuous drain current for the CSD17552Q5A at 25°C case temperature?

The CSD17552Q5A supports a continuous drain current of 60 A at T_C = 25°C, limited by package thermal constraints. At higher temperatures or with reduced heatsinking, the silicon-limited current of 88 A applies-but practical operation remains constrained by R_θJC and PCB layout. For sustained 60 A operation, the CSD17552Q5A requires a minimum 1-inch² 2-oz copper pad per TI's recommended layout.

Does the CSD17552Q5A have a specified avalanche energy rating?

Yes, the CSD17552Q5A is avalanche-rated with E_AS = 45 mJ (single pulse, I_D = 30 A, L = 0.1 mH, R_G = 25 Ω). This rating is confirmed in the Absolute Maximum Ratings table and validated per JEDEC JESD24-1. The CSD17552Q5A can safely absorb this energy without parametric shift or failure, making it suitable for synchronous buck topologies subject to inductive switching stress.

What is the gate threshold voltage range for the CSD17552Q5A, and how does it vary with temperature?

The CSD17552Q5A has a gate threshold voltage V_GS(th) of 1.1–1.9 V (min–max) at T_A = 25°C, with typical value 1.5 V. As shown in Figure 7 of the datasheet, V_GS(th) decreases linearly with rising temperature-measuring ~1.3 V at 125°C and ~1.7 V at −55°C. This behavior is inherent to N-channel MOSFET physics and is fully characterized for the CSD17552Q5A.

Can the CSD17552Q5A be used with 5-V gate drive in a synchronous buck converter?

Yes-the CSD17552Q5A is explicitly optimized for 4.5–5 V gate drive, delivering R_DS(on) = 6.1 mΩ at V_GS = 4.5 V. Its low V_GS(th) (1.5 V typ.) and high transconductance (77 S) ensure strong enhancement and fast switching even at 5 V. TI's application note SLPA005 confirms stable operation with 5-V controllers like the UCD7242 when using the CSD17552Q5A as the control FET.

What is the thermal resistance from junction to case (R_θJC) for the CSD17552Q5A, and how is it measured?

The CSD17552Q5A has R_θJC = 1.8 °C/W (typical), measured with the device mounted on a 1-inch² (6.45 cm²), 2-oz (0.071-mm thick) copper pad on FR4 PCB per JEDEC JESD51-14. This value reflects the intrinsic thermal path from die junction to the exposed thermal pad-critical for estimating junction temperature rise under load. The CSD17552Q5A's low R_θJC enables direct thermal coupling to heatsinks or internal copper planes.