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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Texas Instruments CSD17559Q5T

Name: CSD17559Q5T
Brand: Texas Instruments
SKU: CSD17559Q5T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CSD17559Q5T

Manufacturer:: Texas Instruments

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: CSD17559Q5T.pdf

Description:: MOSFET N-CH 30V 100A 8VSON

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Product details

Overview

CSD17559Q5T from Texas Instruments is a 30-V N-channel NexFET™ power MOSFET in a VSON-CLIP (DQH) 8-pin package, optimized for high-efficiency synchronous buck converters and active ORing. It delivers 0.95 mΩ R_DS(on) at V_GS = 10 V, 39 nC total gate charge, and 100 A continuous drain current at T_C = 25°C - enabling low conduction and switching losses in point-of-load power stages for networking and telecom systems.

For engineers reviewing the CSD17559Q5T datasheet, CSD17559Q5T pinout, CSD17559Q5T application, or CSD17559Q5T equivalent, key selection criteria include its ultra-low Q_gd (9.3 nC), avalanche-rated capability (541 mJ), thermal resistance (R_θJC = 1.2°C/W), RoHS-exempt Sn lead finish, and MSL Level-1 reflow compatibility - all critical for high-density, thermally constrained DC/DC designs.

Technical Context

This device uses a silicon-limited trench-gate process with copper-clip packaging to achieve sub-1-mΩ on-resistance and minimized parasitic inductance. Its low Q_gd/Q_g ratio (24%) supports fast, clean switching with reduced Miller-induced shoot-through risk in synchronous rectification topologies.

The integrated body diode exhibits 0.8–1.0 V forward voltage at 40 A and 37 ns reverse recovery time under 300 A/μs di/dt, enabling efficient freewheeling in hard-switched buck and hot-swap circuits without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V nominal with 25% margin for transient spikes in telecom POL applications.
R_DS(on) @ V_GS = 10 V	0.95 mΩ - Enables ≤1.5 W conduction loss at 40 A, reducing heatsink requirements in compact 5 × 6 mm layouts.
Q_g	39 nC - Low gate drive energy allows use of standard 1-A gate drivers without boost circuitry in 500 kHz–1 MHz converters.
Q_gd	9.3 nC - Minimizes Miller plateau duration, improving controllability during hard switching and reducing EMI generation.
R_θJC	1.2°C/W - Enables direct thermal coupling to PCB copper or heatsink, supporting >90 W power dissipation with case temperature control.
E_AS	541 mJ - Withstands unclamped inductive switching events common in hot-swap insertion, eliminating need for external snubbers.
I_D Continuous	100 A @ T_C = 25°C - Package-limited rating ensures safe operation under sustained high-current loads when mounted on ≥1 in² 2-oz Cu.

Pinout & Package

VSON-CLIP (DQH) 8-pin package with exposed thermal pad (E-pad) on bottom surface; dimensions 5.0 mm × 6.0 mm × 1.0 mm; RoHS-exempt Sn lead finish; MSL Level-1 (260°C peak reflow).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common source connection tied to E-pad - provides low-inductance return path and primary thermal conduction route to PCB.
5	Gate	Single gate input with 1.2–2.4 Ω internal series resistance - compatible with standard PWM controller gate drivers without external limiting.
6, 7, 8	Drain	Parallel drain terminals connected to large internal copper clip - minimizes package inductance (<0.5 nH) for high di/dt stability.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.95 mΩ @ 10 V enables <1.5 W conduction loss at 40 A, directly reducing system thermal load in space-constrained modules.
Low Q_gd/Q_g ratio	24% (9.3/39 nC) improves switching controllability and reduces voltage overshoot during turn-off in synchronous rectifiers.
Avalanche energy rating	541 mJ supports robustness against inductive kickback in hot-swap and ORing circuits without derating or external protection.
Copper-clip VSON packaging	Reduces package inductance by >40% vs. wire-bond QFN, enabling stable operation at >1 MHz switching frequencies.
Thermal performance	R_θJC = 1.2°C/W allows direct thermal interface to heatsink or thick copper plane - critical for 100 A continuous operation.

Applications

Point-of-Load Synchronous Buck	Synchronous Rectification
Use Scenario: High-current, high-frequency DC/DC conversion in 48 V-to-12 V or 12 V-to-1 V server VRMs and AI accelerator power supplies. IC Role / Device Role / Timing Role: Low-side switch in dual-MOSFET synchronous buck stage, operating at 500 kHz–1.5 MHz with precise dead-time control. Use Value: 0.95 mΩ R_DS(on) and 39 nC Q_g reduce both conduction and switching losses, enabling >95% efficiency at 40 A output while minimizing thermal footprint.	Use Scenario: Secondary-side rectification in isolated DC/DC converters for telecom base stations and optical line terminals. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes, driven by transformer-coupled or controller-synchronized gate signals. Use Value: 0.8 V V_SD and 37 ns t_rr cut forward drop and reverse recovery loss by >60% vs. 45 V Schottky, improving full-load efficiency by 1.2–1.8%.
Active ORing	Hot-Swap Circuit Protection
Use Scenario: Redundant power supply combining in enterprise storage enclosures and modular servers where seamless failover is required. IC Role / Device Role / Timing Role: Bidirectional ORing FET controlled by dedicated ideal diode controller (e.g., LM5050) to block reverse current and enable zero-voltage turn-on. Use Value: Avalanche rating (541 mJ) and low R_DS(on) ensure reliable blocking of fault currents up to 100 A without latch-up or thermal runaway.	Use Scenario: Inrush current limiting and overcurrent protection during live insertion of line cards in carrier-grade routers and switches. IC Role / Device Role / Timing Role: Main pass element in hot-swap controller IC (e.g., TPS2373) feedback loop, modulated to limit dI/dt and clamp overvoltage. Use Value: 100 A continuous rating and 400 A pulsed capability support 50 A steady-state + 200 A surge handling with minimal voltage drop across the FET.

Point-of-Load Synchronous Buck

Synchronous Rectification

Use Scenario: High-current, high-frequency DC/DC conversion in 48 V-to-12 V or 12 V-to-1 V server VRMs and AI accelerator power supplies.

IC Role / Device Role / Timing Role: Low-side switch in dual-MOSFET synchronous buck stage, operating at 500 kHz–1.5 MHz with precise dead-time control.

Use Value: 0.95 mΩ R_DS(on) and 39 nC Q_g reduce both conduction and switching losses, enabling >95% efficiency at 40 A output while minimizing thermal footprint.

Use Scenario: Secondary-side rectification in isolated DC/DC converters for telecom base stations and optical line terminals.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes, driven by transformer-coupled or controller-synchronized gate signals.

Use Value: 0.8 V V_SD and 37 ns t_rr cut forward drop and reverse recovery loss by >60% vs. 45 V Schottky, improving full-load efficiency by 1.2–1.8%.

Active ORing

Hot-Swap Circuit Protection

Use Scenario: Redundant power supply combining in enterprise storage enclosures and modular servers where seamless failover is required.

IC Role / Device Role / Timing Role: Bidirectional ORing FET controlled by dedicated ideal diode controller (e.g., LM5050) to block reverse current and enable zero-voltage turn-on.

Use Value: Avalanche rating (541 mJ) and low R_DS(on) ensure reliable blocking of fault currents up to 100 A without latch-up or thermal runaway.

Use Scenario: Inrush current limiting and overcurrent protection during live insertion of line cards in carrier-grade routers and switches.

IC Role / Device Role / Timing Role: Main pass element in hot-swap controller IC (e.g., TPS2373) feedback loop, modulated to limit dI/dt and clamp overvoltage.

Use Value: 100 A continuous rating and 400 A pulsed capability support 50 A steady-state + 200 A surge handling with minimal voltage drop across the FET.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 1.3 mΩ @ 10 V; Q_g = 32 nC; TO-263-7 package; higher R_θJA (45°C/W vs. 50°C/W for CSD17559Q5T).	Requires larger PCB area and less effective thermal spreading than 5×6 mm SON; better suited for lower-frequency, higher-voltage (40 V) designs.	Choose IRF6642TRPBF only if legacy TO-263 layout reuse is mandatory and 0.35 mΩ R_DS(on) penalty is acceptable.
SiR626DP-T1-GE3	R_DS(on) = 0.95 mΩ @ 10 V; Q_g = 42 nC; PowerPAK® 5×6; no avalanche rating; R_θJC = 1.4°C/W.	Lacks E_AS specification - unsuitable for unclamped inductive switching in hot-swap; slightly higher thermal resistance limits peak power handling.	Select SiR626DP-T1-GE3 only for cost-sensitive, non-avalanche applications where gate charge tolerance is >39 nC and thermal margin exceeds 10°C.

Compared with IRF6642TRPBF and SiR626DP-T1-GE3, CSD17559Q5T uniquely combines 0.95 mΩ on-resistance, 541 mJ avalanche energy, and 1.2°C/W junction-to-case thermal resistance in a compact 5×6 mm footprint - making it optimal for high-reliability, high-density 30 V synchronous buck and ORing designs where thermal headroom and fault robustness are critical.

Availability

CSD17559Q5T is available at Aetrix Electronics and suitable for point-of-load synchronous buck, synchronous rectification, and active ORing applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and telecom infrastructure programs.

Supply support for CSD17559Q5T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-efficiency power conversion solutions.

The CSD17559Q5T belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-current, high-frequency DC/DC conversion in data center, networking, and telecom infrastructure where ultra-low R_DS(on), fast switching, and thermal reliability are essential.

FAQ

What is the maximum continuous drain current rating for CSD17559Q5T at 125°C case temperature?

The CSD17559Q5T has a continuous drain current rating of 40 A at T_C = 125°C, as specified in the Absolute Maximum Ratings table. This reflects silicon-limited current under thermal constraint, distinct from the 100 A rating at T_C = 25°C. Derating curves in Figure 12 confirm linear reduction from 100 A to 40 A between 25°C and 125°C case temperature - a critical parameter for thermal design validation in enclosed telecom modules.

Does CSD17559Q5T support gate drive voltages below 4.5 V, and what is its threshold behavior?

Yes, CSD17559Q5T is characterized down to V_GS = 4.5 V, with R_DS(on) = 1.15 mΩ at that level. Its V_GS(th) is 1.2–1.7 V (typical 1.4 V), enabling partial enhancement at 3.3 V logic levels - though full conduction requires ≥4.5 V. The transfer characteristic curve (Figure 3) shows strong transconductance (235 S) and predictable turn-on above 2.5 V, supporting use with 3.3 V gate drivers in low-duty-cycle applications where R_DS(on) margin is acceptable.

How does the CSD17559Q5T's avalanche rating compare to standard power MOSFETs, and is it tested per JEDEC JESD24-1?

CSD17559Q5T is rated for 541 mJ single-pulse avalanche energy (E_AS) under standardized conditions: I_AV = 104 A, L = 0.1 mH, R_G = 25 Ω, T_C = 25°C. This exceeds typical un-rated MOSFETs by 3–5× and meets JEDEC JESD24-1 methodology for repetitive unclamped inductive switching stress. The rating is production-tested and guaranteed - not just characterized - making CSD17559Q5T suitable for hot-swap and ORing circuits where transient overvoltage events are routine.

What is the recommended PCB layout for thermal management of CSD17559Q5T?

TI recommends a minimum 1 in² (6.45 cm²) 2-oz copper pad connected to the exposed drain and source terminals (pins 1–4 and 6–8) via multiple thermal vias (≥8× 0.3 mm diameter, filled or plated) to inner-layer ground/power planes. The mechanical drawing (M0138-01) specifies F1–F11 pad dimensions; critical features include 4.9 mm × 5.0 mm central E-pad (F10/F11) and 0.65 mm wide source/drain traces. This layout achieves R_θJA ≈ 50°C/W - essential to sustain 100 A continuous current without exceeding 150°C junction temperature.

Is CSD17559Q5T pin-compatible with other devices in the CSD175xxQ5 family?

Yes, CSD17559Q5T shares identical VSON-CLIP (DQH) 8-pin pinout and footprint with all members of the CSD175xxQ5 family (e.g., CSD17573Q5T, CSD17577Q5T), including matching drain/source terminal assignments and gate location. This enables direct substitution within the same family for R_DS(on) or Q_g optimization - provided thermal and layout margins accommodate differences in power dissipation (e.g., CSD17577Q5T has higher R_DS(on) but same package).

CSD17559Q5T Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: NexFET™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.15mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 1.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.2W (Ta), 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-VSON-CLIP (5x6)

CSD17559Q5T FAQ

1.How can I place an order for CSD17559Q5T through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD17559Q5T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD17559Q5T reliable?

The price and inventory of CSD17559Q5T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17559Q5T is usually 5 days.

3.What payment methods are accepted for CSD17559Q5T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD17559Q5T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CSD17559Q5T?

CSD17559Q5T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD17559Q5T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD17559Q5T?

For technical support, including CSD17559Q5T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17559Q5T requirements.

6.How does Aetrix verify that CSD17559Q5T is sourced from the original manufacturer or authorized distributors?

All CSD17559Q5T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17559Q5T meets industry standards.

7.What is the process for return or replacement of CSD17559Q5T?

All CSD17559Q5T units undergo pre-shipment inspection (PSI). If there is an issue with CSD17559Q5T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD17559Q5T part is unused and in its original packaging.

Return procedure for CSD17559Q5T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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