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Texas Instruments CSD17573Q5BT
- Part No.:
- CSD17573Q5BT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
CSD17573Q5BT.pdf
- Description:
- MOSFET N-CH 30V 100A 8VSON
- Quantity:
- Payment:
- Shipping:
Inventory:970
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Product details
Overview
CSD17573Q5BT from Texas Instruments is a 30-V, 0.84-mΩ N-channel NexFET™ power MOSFET in an 8-pin VSON-CLIP (DNK) package, optimized as a synchronous FET in high-current point-of-load buck converters for telecom and computing systems, with 49-nC total gate charge, ±20-V gate rating, and avalanche-rated ruggedness.
For engineers reviewing the CSD17573Q5BT datasheet, CSD17573Q5BT pinout, CSD17573Q5BT application, or CSD17573Q5BT equivalent, key selection criteria include RDS(on) at 4.5 V (1.19 mΩ), thermal resistance (RθJC = 0.8°C/W), continuous drain current (100 A), and compatibility with high-frequency synchronous rectification in dense PCB layouts.
Technical Context
This device employs a silicon-limited, clip-bonded VSON-CLIP structure to minimize parasitic inductance and thermal resistance, enabling high pulsed current handling (400 A) and efficient operation at switching frequencies up to several MHz. Its low Qgd/Qg ratio (11.9/49 nC) supports fast, low-loss turn-on/turn-off transitions under hard-switching conditions.
The MOSFET features a 1.4-V threshold voltage with tight distribution (1.1–1.8 V), stable RDS(on) over temperature (normalized to 1.0 at 25°C), and integrated body diode with 0.8–1.0-V forward voltage at 35 A - all validated for unclamped inductive switching with 289-mJ single-pulse avalanche energy.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24-V input rails and transient margin in telecom POL stages |
| RDS(on) @ 10 V | 0.84 mΩ - Enables <1 W conduction loss at 100-A DC load in compact thermal pads |
| RDS(on) @ 4.5 V | 1.19 mΩ - Supports efficient operation directly from 5-V gate drivers without level-shifting |
| Qg | 49 nC - Low total gate charge reduces driver power and enables >1-MHz switching with standard gate drivers |
| RθJC | 0.8°C/W - Enables direct thermal coupling to heatsink or copper plane for high-power density designs |
| ID (cont) | 100 A - Package-limited continuous current suitable for 50–100-A multiphase POL outputs |
| EAS | 289 mJ - Avalanche-rated for robustness against inductive kickback in synchronous buck freewheeling |
Pinout & Package
The CSD17573Q5BT uses an 8-pin VSON-CLIP (DNK) thermally enhanced plastic package measuring 5.0 mm × 6.0 mm × 1.0 mm, with exposed drain paddle for low-inductance, low-thermal-resistance mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Drain (D) | Internally connected to exposed copper paddle - primary current path and thermal interface to PCB |
| 6 | Gate (G) | Control terminal requiring <49 nC charge; layout must minimize loop inductance for clean switching |
| 7, 8 | Source (S) | Power return path for channel current; tied to source of synchronous controller and local ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.84 mΩ at 10 V ensures <0.84 W conduction loss at 100 A, critical for >95% POL efficiency |
| Low Qg and Qgd | 49 nC total / 11.9 nC Miller charge enables fast, low-ESW switching with minimal driver stress |
| Avalanche rated | 289 mJ single-pulse EAS provides design margin against voltage overshoot during dead-time transitions |
| Thermally optimized package | RθJC = 0.8°C/W allows direct heat transfer from die to heatsink or thick copper, supporting >150 W dissipation |
| RoHS-compliant, halogen-free | Meets IPC-1752A material declaration requirements for industrial and telecom end-equipment compliance |
Applications
| Telecom Point-of-Load Converter | Server VRM High-Current Phase |
|---|---|
Use Scenario: 12-V input to 0.8–1.8-V output conversion in 48-V intermediate bus telecom equipment with strict efficiency and thermal constraints. IC Role / Device Role / Timing Role: Synchronous rectifier FET in dual-phase interleaved buck converter operating at 500 kHz–1 MHz. Use Value: 0.84-mΩ RDS(on) and 0.8°C/W RθJC reduce conduction loss and junction temperature rise by >15°C vs. legacy SO-8 MOSFETs. | Use Scenario: Multiphase CPU/GPU voltage regulator delivering up to 300 A with dynamic load steps exceeding 100 A/μs. IC Role / Device Role / Timing Role: Low-side synchronous FET in 3–6 phase VRM, driven by dedicated gate driver ICs with adaptive dead-time control. Use Value: 49-nC Qg and low Qgd enable precise timing control and reduced shoot-through risk during high-dV/dt transitions. |
| Networking Switch ASIC Power | Industrial FPGA Core Supply |
Use Scenario: Compact 48-V-to-1-V POL module powering 100-GbE switch ASICs in space-constrained line cards. IC Role / Device Role / Timing Role: Primary high-current synchronous FET in stacked inductor buck topology with integrated power stage controller. Use Value: SON 5×6 mm footprint and clip-bonded construction allow >80 A/in² current density while maintaining <100°C TJ at full load. | Use Scenario: Reconfigurable logic core supply requiring fast transient response and high reliability across extended temperature range (−40°C to 105°C). IC Role / Device Role / Timing Role: Final-stage synchronous rectifier in digitally controlled buck converter with PMBus interface. Use Value: Stable 1.4-V VGS(th) and low RDS(on) temperature coefficient ensure consistent on-resistance across industrial ambient conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CSD17571Q5B | RDS(on) = 1.25 mΩ @ 10 V; Qg = 42 nC; same 8-pin VSON-CLIP package | Slightly higher conduction loss but lower gate drive requirement; better suited for gate-driver-limited designs | Select when prioritizing driver simplicity over absolute lowest RDS(on) in mid-power POL stages |
| IRLHS6342 | RDS(on) = 0.95 mΩ @ 10 V; Qg = 52 nC; 8-pin PQFN package with different thermal pad layout | Higher gate charge increases driver losses; different thermal pad geometry requires PCB redesign | Consider only if TI supply chain constraints exist and board re-spin is acceptable |
Compared with CSD17573Q5BT, CSD17571Q5B trades 0.11-mΩ higher RDS(on) for 7-nC lower Qg, improving gate drive efficiency but increasing conduction loss; IRLHS6342 offers marginally lower RDS(on) but demands more gate drive power and incompatible PCB layout.
Availability
CSD17573Q5BT is available at Aetrix Electronics and suitable for telecom point-of-load converters, server VRM phases, and industrial FPGA core supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.
Supply support for CSD17573Q5BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company designing analog, embedded processing, and power management ICs for industrial, automotive, and communications markets.
The CSD17573Q5BT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-density synchronous buck converters in networking, telecom, and computing infrastructure.
FAQ
What is the maximum continuous drain current rating for the CSD17573Q5BT?
The CSD17573Q5BT has a package-limited continuous drain current (ID) of 100 A at TC = 25°C. This rating assumes proper PCB thermal design with ≥1-in² 2-oz copper pad. Silicon-limited current is 332 A, but practical operation is constrained by package thermal performance and layout. Always verify junction temperature using RθJC = 0.8°C/W and actual power dissipation in the CSD17573Q5BT application.
Does the CSD17573Q5BT support 4.5-V gate drive in synchronous buck topologies?
Yes, the CSD17573Q5BT is fully specified for 4.5-V gate drive, with RDS(on) = 1.19 mΩ typical at VGS = 4.5 V and ID = 35 A. Its 1.4-V threshold voltage and low gate charge (49 nC) make it well-suited for direct drive from 5-V controllers or level-shifted gate drivers in high-efficiency synchronous buck converters using the CSD17573Q5BT.
What is the thermal resistance from junction to case (RθJC) for the CSD17573Q5BT?
The CSD17573Q5BT has a maximum junction-to-case thermal resistance (RθJC) of 0.8°C/W, measured with the device mounted on a 1-in², 2-oz copper pad per JEDEC standards. This low value reflects its clip-bonded VSON-CLIP construction, enabling efficient heat transfer from the die through the exposed drain paddle to the PCB or external heatsink in CSD17573Q5BT-based power stages.
Is the CSD17573Q5BT avalanche-rated, and what is its single-pulse energy rating?
Yes, the CSD17573Q5BT is avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy rating of 289 mJ at ID = 76 A, L = 0.1 mH, and RG = 25 Ω. This specification ensures robustness against voltage transients during synchronous rectifier freewheeling in buck converters, a key reliability feature confirmed in the official CSD17573Q5BT datasheet.
What package type and dimensions does the CSD17573Q5BT use?
The CSD17573Q5BT uses an 8-pin VSON-CLIP (DNK) thermally enhanced plastic package measuring 5.0 mm × 6.0 mm × 1.0 mm, with an exposed drain paddle occupying most of the bottom surface. Pin pitch is 1.27 mm, and the package complies with JEDEC MO-229 standards. This footprint is identical to the CSD17573Q5B variant, differing only in reel quantity (250 vs. 2500 units).
CSD17573Q5BT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9000 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 195W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VSON-CLIP (5x6)
CSD17573Q5BT FAQ
1.How can I place an order for CSD17573Q5BT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD17573Q5BT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD17573Q5BT reliable?
The price and inventory of CSD17573Q5BT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17573Q5BT is usually 5 days.
3.What payment methods are accepted for CSD17573Q5BT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD17573Q5BT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD17573Q5BT?
CSD17573Q5BT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD17573Q5BT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD17573Q5BT?
For technical support, including CSD17573Q5BT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17573Q5BT requirements.
6.How does Aetrix verify that CSD17573Q5BT is sourced from the original manufacturer or authorized distributors?
All CSD17573Q5BT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17573Q5BT meets industry standards.
7.What is the process for return or replacement of CSD17573Q5BT?
All CSD17573Q5BT units undergo pre-shipment inspection (PSI). If there is an issue with CSD17573Q5BT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD17573Q5BT part is unused and in its original packaging.
Return procedure for CSD17573Q5BT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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