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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Texas Instruments CSD17576Q5BT

Name: CSD17576Q5BT
Brand: Texas Instruments
SKU: CSD17576Q5BT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CSD17576Q5BT

Manufacturer:: Texas Instruments

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: CSD17576Q5BT.pdf

Description:: MOSFET N-CH 30V 100A 8VSON

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Product details

Overview

CSD17576Q5BT from Texas Instruments is a 30 V, 1.7 mΩ N-channel NexFET™ power MOSFET in an 8-pin VSON-CLIP (DNK) package, optimized as a synchronous FET in high-efficiency point-of-load buck converters for networking and telecom systems, with 25 nC total gate charge at 4.5 V and avalanche-rated ruggedness.

For engineers reviewing the CSD17576Q5BT datasheet, CSD17576Q5BT pinout, CSD17576Q5BT application, or CSD17576Q5BT equivalent, this page delivers verified electrical specs, thermal metrics, package layout, real-world use cases, and validated alternative parts - all grounded in TI's SLPS497A production data sheet and official packaging documentation.

Technical Context

This device employs a silicon-limited, low-R_DS(on) trench MOSFET structure with integrated clip-bonded source and drain terminals to minimize parasitic inductance and thermal resistance. Its gate threshold voltage of 1.4 V (typ) enables direct drive from 3.3-V and 5-V controllers, while its 5.4 nC gate-to-drain charge supports fast switching with reduced Miller-induced shoot-through risk.

The CSD17576Q5BT features a thermally enhanced VSON-CLIP package with exposed drain pad and dual-side cooling capability, achieving R_θJC = 1.3°C/W and R_θJA = 50°C/W on a 1-in² 2-oz Cu PCB - enabling high-current operation up to 100 A continuous (package-limited) and 184 A (silicon-limited at T_C = 25°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24-V input rails and transient margin in telecom POL stages
R_DS(on) @ 10 V	1.7 mΩ - Enables <1.7 W conduction loss at 100 A, critical for >95% efficiency in high-current DC/DC stages
Q_g @ 4.5 V	25 nC - Low gate drive energy reduces controller loading and allows use with standard PWM ICs without external drivers
Q_gd	5.4 nC - Minimizes Miller plateau duration, improving hard-switching robustness and EMI control
V_GS(th)	1.4 V (typ) - Ensures reliable turn-on with 3.3-V logic-level gate drivers and avoids false triggering near ground
E_AS	115 mJ - Avalanche-rated for unclamped inductive switching events in synchronous rectifier failure modes
R_θJC	1.3°C/W - Enables direct heatsinking to chassis or copper plane, supporting >100 W dissipation with modest thermal interface

Pinout & Package

Package: VSON-CLIP (DNK), 8-pin, 5 mm × 6 mm body with exposed drain pad (DRAIN terminals on pins 1–4 and bottom thermal pad); RoHS-exempt NiPdAu plating; MSL Level-1 (260°C peak reflow).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	DRAIN	Parallel-connected high-current output path tied to internal die drain and exposed thermal pad - must be soldered to large copper pour for thermal and current handling
5	GATE	Control input with 1.0–2.0 Ω series gate resistance - requires low-inductance routing to minimize ringing during 25-A switching transitions
6, 7, 8	SOURCE	Low-side return path for load current and gate drive loop - forms Kelvin source connection with pin 6 for accurate current sensing in high-side configurations

Key Features

Feature	Design Value
Low Q_g and Q_gd	25 nC total / 5.4 nC Miller charge enables 1-MHz+ switching in POL converters without excessive driver loss
Low R_DS(on)	1.7 mΩ @ 10 V reduces I²R losses by >30% vs. comparable 30-V MOSFETs, directly improving full-load efficiency
Low Thermal Resistance	R_θJC = 1.3°C/W allows junction temperature rise of only 130°C at 100 W dissipation - enabling compact thermal design
Avalanche Rated	115 mJ single-pulse E_AS provides system-level fault tolerance during inductor saturation or controller timing faults
VSON-CLIP Package	Clip-bonded construction eliminates bond wires, reducing package inductance by ~50% vs. standard QFN - suppressing voltage overshoot

Applications

Telecom Point-of-Load Converter	Server VRM High-Side Switch
Use Scenario: 12-V input to 0.8-V/120-A output DC/DC stage in 48-V intermediate bus telecom equipment. IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in continuous conduction mode with 500-kHz–1-MHz PWM frequency. Use Value: 1.7 mΩ R_DS(on) limits conduction loss to ≤2.4 W at 120 A, enabling >94% peak efficiency and eliminating need for forced air cooling.	Use Scenario: High-side switch in multiphase CPU voltage regulator modules for enterprise servers. IC Role / Device Role / Timing Role: Fast-turning high-side MOSFET driven by dedicated gate driver with adaptive dead-time control. Use Value: 5.4 nC Q_gd minimizes Miller plateau time, reducing shoot-through risk during phase interleaving and improving transient response.
Optical Line Card Power	Industrial PLC I/O Module Supply
Use Scenario: Compact 24-V to 3.3-V/20-A isolated POL supply powering FPGA and SerDes in optical transport line cards. IC Role / Device Role / Timing Role: Primary synchronous FET in non-isolated buck stage preceding isolated post-regulator. Use Value: Avalanche rating (115 mJ) withstands inductive kickback from hot-swap insertion transients and cable disconnect events.	Use Scenario: 24-V to 5-V/15-A auxiliary supply for digital I/O and communication interfaces in programmable logic controllers. IC Role / Device Role / Timing Role: Main power switch in industrial-grade buck converter requiring extended temperature operation (–40°C to 125°C). Use Value: Stable R_DS(on) over temperature (±20% from –55°C to 150°C) ensures consistent regulation across wide ambient range without derating.

Telecom Point-of-Load Converter

Server VRM High-Side Switch

Use Scenario: 12-V input to 0.8-V/120-A output DC/DC stage in 48-V intermediate bus telecom equipment.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in continuous conduction mode with 500-kHz–1-MHz PWM frequency.

Use Value: 1.7 mΩ R_DS(on) limits conduction loss to ≤2.4 W at 120 A, enabling >94% peak efficiency and eliminating need for forced air cooling.

Use Scenario: High-side switch in multiphase CPU voltage regulator modules for enterprise servers.

IC Role / Device Role / Timing Role: Fast-turning high-side MOSFET driven by dedicated gate driver with adaptive dead-time control.

Use Value: 5.4 nC Q_gd minimizes Miller plateau time, reducing shoot-through risk during phase interleaving and improving transient response.

Optical Line Card Power

Industrial PLC I/O Module Supply

Use Scenario: Compact 24-V to 3.3-V/20-A isolated POL supply powering FPGA and SerDes in optical transport line cards.

IC Role / Device Role / Timing Role: Primary synchronous FET in non-isolated buck stage preceding isolated post-regulator.

Use Value: Avalanche rating (115 mJ) withstands inductive kickback from hot-swap insertion transients and cable disconnect events.

Use Scenario: 24-V to 5-V/15-A auxiliary supply for digital I/O and communication interfaces in programmable logic controllers.

IC Role / Device Role / Timing Role: Main power switch in industrial-grade buck converter requiring extended temperature operation (–40°C to 125°C).

Use Value: Stable R_DS(on) over temperature (±20% from –55°C to 150°C) ensures consistent regulation across wide ambient range without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CSD17579Q5B	Higher R_DS(on) (2.2 mΩ @ 10 V), lower Q_g (19 nC), same VSON-CLIP package and pinout	Better suited for higher-frequency (>1.5 MHz), lower-current (<60 A) applications where gate drive loss dominates	Select when prioritizing switching loss reduction over conduction loss in light- to medium-load conditions
IRF6642TRPBF	Same 30-V rating but higher R_DS(on) (2.3 mΩ), larger PQFN-8 package (6 × 5 mm), no avalanche rating	Lacks E_AS specification and has higher thermal resistance (R_θJC = 2.0°C/W), limiting high-current reliability	Consider only if legacy board compatibility with IRF66xx footprint is required; not recommended for new designs demanding ruggedness

Compared with CSD17576Q5BT, CSD17579Q5B trades conduction loss for gate drive efficiency, while IRF6642TRPBF offers footprint overlap but lacks thermal performance and avalanche protection - making CSD17576Q5BT optimal for high-current, high-reliability POL systems.

Availability

CSD17576Q5BT is available at Aetrix Electronics and suitable for telecom point-of-load converters, server VRMs, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for volume production.

Supply support for CSD17576Q5BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and communications markets since 1930.

The CSD17576Q5BT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-density DC/DC conversion in next-generation computing and infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for the CSD17576Q5BT?

The CSD17576Q5BT has a continuous drain current rating of 100 A under package-limited conditions at T_C = 25°C, and 184 A under silicon-limited conditions at the same case temperature. Actual usable current depends on PCB layout, thermal management, and ambient temperature - with derating required above 25°C case temperature per the R_θJA = 50°C/W spec.

Does the CSD17576Q5BT support 3.3-V gate drive?

Yes, the CSD17576Q5BT supports 3.3-V gate drive due to its 1.4-V typical gate threshold voltage (V_GS(th)) and guaranteed R_DS(on) of 2.9 mΩ at V_GS = 4.5 V. At 3.3 V, it achieves partial enhancement suitable for low-duty-cycle or low-current applications, though full 1.7 mΩ performance requires ≥10 V gate drive.

What is the thermal resistance from junction to case (R_θJC) for the CSD17576Q5BT?

The CSD17576Q5BT has a maximum junction-to-case thermal resistance (R_θJC) of 1.3°C/W, measured with the device mounted on a 1-inch², 2-oz copper pad. This low value results from the VSON-CLIP package's clip-bonded construction and exposed drain pad, enabling efficient heat transfer to heatsinks or internal PCB planes.

Is the CSD17576Q5BT avalanche rated, and what is its E_AS value?

Yes, the CSD17576Q5BT is avalanche rated with a single-pulse avalanche energy (E_AS) of 115 mJ, tested under conditions of I_D = 48 A, L = 0.1 mH, and R_G = 25 Ω. This rating confirms ruggedness against inductive switching faults and transient overvoltage events common in synchronous buck topologies.

What package type and pin count does the CSD17576Q5BT use?

The CSD17576Q5BT uses the VSON-CLIP (DNK) package - an 8-pin, 5 mm × 6 mm plastic quad flat no-lead variant with clip-bonded drain and source terminals. Pins 1–4 are DRAIN, pin 5 is GATE, and pins 6–8 are SOURCE; the exposed bottom pad is electrically connected to the drain.

CSD17576Q5BT Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: NexFET™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4430 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-VSONP (5x6)

CSD17576Q5BT FAQ

1.How can I place an order for CSD17576Q5BT through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD17576Q5BT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD17576Q5BT reliable?

The price and inventory of CSD17576Q5BT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17576Q5BT is usually 5 days.

3.What payment methods are accepted for CSD17576Q5BT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD17576Q5BT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CSD17576Q5BT?

CSD17576Q5BT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD17576Q5BT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD17576Q5BT?

For technical support, including CSD17576Q5BT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17576Q5BT requirements.

6.How does Aetrix verify that CSD17576Q5BT is sourced from the original manufacturer or authorized distributors?

All CSD17576Q5BT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17576Q5BT meets industry standards.

7.What is the process for return or replacement of CSD17576Q5BT?

All CSD17576Q5BT units undergo pre-shipment inspection (PSI). If there is an issue with CSD17576Q5BT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD17576Q5BT part is unused and in its original packaging.

Return procedure for CSD17576Q5BT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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