Texas Instruments CSD17577Q5AT
- Part No.:
- CSD17577Q5AT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
CSD17577Q5AT.pdf
- Description:
- MOSFET N-CH 30V 60A 8VSON
- Quantity:
- Payment:

- Shipping:

Inventory:2,759
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Product details
Overview
CSD17577Q5AT from Texas Instruments is a 30-V N-channel NexFET™ power MOSFET in a VSONP (DQJ) 8-pin 5 mm × 6 mm package, optimized for high-efficiency synchronous buck converters. It delivers RDS(on) = 3.5 mΩ at VGS = 10 V and ID = 18 A, Qg = 13 nC (4.5 V), and avalanche-rated operation-enabling compact, high-current point-of-load regulation in telecom and computing systems.
For engineers reviewing the CSD17577Q5AT datasheet, CSD17577Q5AT pinout, CSD17577Q5AT application, or CSD17577Q5AT equivalent, key selection criteria include low gate charge for fast switching, thermal resistance RθJC = 2.8°C/W for high-power density layouts, and SON 5×6 mm footprint compatibility with tight PCB space constraints.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(on) and minimized Qgd/Qg ratio (2.8 nC / 13 nC), reducing switching losses in hard-switched topologies. Its VGS(th) = 1.4 V (typ) enables robust gate drive margin with 4.5-V logic-level controllers.
The device features integrated body diode with Qrr = 8.2 nC and trr = 9.3 ns, supporting efficient synchronous rectification. Thermal design is enabled by low RθJC = 2.8°C/W and RθJA = 50°C/W on standard 1-in² 2-oz Cu FR4, allowing direct thermal coupling to heatsink pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Supports input rails up to 24 V in industrial/computing DC/DC converters. |
| RDS(on) @ VGS = 10 V | 3.5 mΩ - Enables ≤1.2 W conduction loss at 18 A continuous drain current. |
| Qg @ 4.5 V | 13 nC - Reduces gate driver power demand and enables >1 MHz switching in POL designs. |
| VGS(th) | 1.4 V (typ) - Ensures reliable turn-on with 3.3-V or 5-V gate drivers without level-shifting. |
| RθJC | 2.8°C/W - Allows direct thermal path to PCB copper or external heatsink for high-power density. |
| Avalanche Energy EAS | 39 mJ - Withstands unclamped inductive switching stress during transient fault conditions. |
| ID (continuous, TC = 25°C) | 83 A - Supports high-current output stages without parallel devices in many applications. |
Pinout & Package
VSONP (DQJ) 8-pin 5 mm × 6 mm plastic package with exposed thermal pad (pin 8). Package meets RoHS, halogen-free, and Pb-free terminal plating requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Low-side return path; electrically and thermally connected to exposed pad for optimal heat dissipation. |
| 5 | Gate | Control input; low Qg enables fast edge rates with minimal driver strength. |
| 6, 7, 8 | Drain | High-current power input/output node; pins 6/7 are internal drain connections; pin 8 is thermal pad tied to drain potential. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg and Qgd | 13 nC total gate charge and 2.8 nC gate-to-drain charge minimize Miller-induced switching delay and dv/dt-induced shoot-through risk. |
| Low RDS(on) at 4.5 V | 4.8 mΩ enables full enhancement with 5-V microcontroller GPIO or standard logic-level drivers-no gate boost needed. |
| Avalanche rated | 39 mJ single-pulse energy rating supports robustness in non-ideal layout or transient overload scenarios without external clamping. |
| Thermal resistance RθJC | 2.8°C/W allows >50 W power dissipation with modest case-to-heatsink thermal interface, critical for high-density server VRMs. |
| SON 5 mm × 6 mm footprint | Standardized land pattern (F1–F11 per SLPS516) ensures manufacturability and reflow yield across contract manufacturers. |
Applications
| Server Point-of-Load Converter | Telecom Base Station DC/DC Module |
|---|---|
|
Use Scenario: High-current, high-frequency step-down conversion feeding ASICs/FPGAs in 1U servers. IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter operating at 500 kHz–1 MHz. Use Value: 3.5 mΩ RDS(on) and 13 nC Qg reduce both conduction and switching losses, enabling >94% efficiency at 40 A output. |
Use Scenario: Intermediate bus regulation in macro/micro base station power supplies with strict thermal limits. IC Role / Device Role / Timing Role: Control FET in dual-phase buck regulator powering RF power amplifiers. Use Value: Low Qgd/Qg ratio minimizes dead-time sensitivity, improving light-load efficiency and reducing EMI generation. |
| Networking Switch ASIC Supply | Industrial PLC Power Management |
|
Use Scenario: Compact 12 V-to-1 V conversion for multi-gigabit Ethernet switch SoCs with dynamic load steps. IC Role / Device Role / Timing Role: High-side sync FET in adaptive on-time buck controller with 100 ns minimum on-time. Use Value: 1.4 V VGS(th) ensures stable turn-on under voltage droop, while 2.8°C/W RθJC sustains 60 A peak current without derating. |
Use Scenario: Reliable 24 V-to-5 V/3.3 V conversion in fanless industrial controllers exposed to wide ambient temperatures. IC Role / Device Role / Timing Role: Primary switching FET in isolated flyback or non-isolated buck converter with extended temperature range. Use Value: –55°C to 150°C operating junction range and avalanche rating ensure functional safety during cold start or overvoltage transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC010N04LS6 | RDS(on) = 1.0 mΩ @ 4.5 V (lower), Qg = 24 nC (higher), TO-263-7 package (larger footprint). | Better conduction loss but higher gate drive loss; requires larger PCB area and different thermal layout. | Select when ultra-low RDS(on) dominates over switching frequency and board space. |
| ON Semiconductor NTMFS5C673NL | RDS(on) = 3.8 mΩ @ 4.5 V (slightly higher), Qg = 12.5 nC (comparable), same 5×6 mm SO8 package. | Near-identical footprint and gate drive profile; slightly higher conduction loss at high current. | Drop-in alternative where TI supply continuity is constrained; verify thermal performance with RθJA = 52°C/W. |
Compared with CSD17577Q5AT, BSC010N04LS6 trades higher gate charge and larger size for lower RDS(on), while NTMFS5C673NL offers near-equivalent electrical behavior in the same SON 5×6 mm form factor-making it the preferred functional substitute for layout-constrained designs.
Availability
CSD17577Q5AT is available at Aetrix Electronics and suitable for point-of-load synchronous buck converters, telecom DC/DC modules, and industrial PLC power management requiring stable component supply and long-term production support.
Supply support for CSD17577Q5AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management ICs, with decades of leadership in high-performance power MOSFET technology.
The CSD17577Q5AT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in space-constrained networking, computing, and telecom infrastructure.
FAQ
What is the maximum continuous drain current for CSD17577Q5AT at 25°C case temperature?
The CSD17577Q5AT supports 83 A continuous drain current when limited by silicon capability at TC = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes adequate PCB copper area and thermal management to maintain case temperature-actual usable current depends on layout, ambient conditions, and duty cycle.
Does CSD17577Q5AT require a gate resistor for stable operation in a 1-MHz synchronous buck converter?
The CSD17577Q5AT has low intrinsic gate resistance (RG = 1.4–2.8 Ω) and benefits from an external gate resistor (typically 1–5 Ω) to damp ringing, control slew rate, and prevent shoot-through in high-speed synchronous buck topologies. TI's reference designs for similar NexFET™ devices confirm this practice improves EMI and reliability at >500 kHz.
Is CSD17577Q5AT pin-compatible with other 5 mm × 6 mm SON-packaged N-channel MOSFETs?
CSD17577Q5AT uses the industry-standard VSONP (DQJ) 8-pin 5 mm × 6 mm package with defined pinout (pins 1–4 = Source, 5 = Gate, 6–8 = Drain/thermal pad). While physical footprint matches many competitors' 5×6 mm SON devices, pin assignment must be verified individually-TI's CSD17577Q5AT pinout is not universally shared across vendors.
What is the recommended PCB copper area for achieving RθJA = 50°C/W with CSD17577Q5AT?
To achieve the datasheet-specified RθJA = 50°C/W, TI recommends mounting the CSD17577Q5AT on a 1-inch² (6.45 cm²) 2-oz copper pad on 0.06-inch FR4. The recommended stencil opening and land pattern (F1–F11 in SLPS516) ensure solder joint integrity and thermal transfer to this copper area.
Can CSD17577Q5AT be used as a replacement for CSD17577Q5A in production designs?
Yes-CSD17577Q5AT is the 250-unit 7-inch reel variant of the same die and package as CSD17577Q5A (2500-unit 13-inch reel). Electrical, thermal, and mechanical specifications are identical; only packaging and reel size differ. No design or layout changes are required when substituting CSD17577Q5AT for CSD17577Q5A.
CSD17577Q5AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2310 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 53W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VSONP (5x6)
CSD17577Q5AT FAQ
1.How can I place an order for CSD17577Q5AT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD17577Q5AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD17577Q5AT reliable?
The price and inventory of CSD17577Q5AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17577Q5AT is usually 5 days.
3.What payment methods are accepted for CSD17577Q5AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD17577Q5AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD17577Q5AT?
CSD17577Q5AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD17577Q5AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD17577Q5AT?
For technical support, including CSD17577Q5AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17577Q5AT requirements.
6.How does Aetrix verify that CSD17577Q5AT is sourced from the original manufacturer or authorized distributors?
All CSD17577Q5AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17577Q5AT meets industry standards.
7.What is the process for return or replacement of CSD17577Q5AT?
All CSD17577Q5AT units undergo pre-shipment inspection (PSI). If there is an issue with CSD17577Q5AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD17577Q5AT part is unused and in its original packaging.
Return procedure for CSD17577Q5AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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