Texas Instruments CSD17578Q5A

Overview

CSD17578Q5A from Texas Instruments is a 30 V, 5.9 mΩ N-channel NexFET™ power MOSFET in a SON 5 mm × 6 mm package, optimized as a control FET in synchronous buck converters for networking and telecom systems, delivering 59 A silicon-limited continuous drain current at 25°C and featuring low gate charge (7.9 nC at 4.5 V) and avalanche rating.

For engineers reviewing the CSD17578Q5A datasheet, CSD17578Q5A pinout, CSD17578Q5A application, or CSD17578Q5A equivalent, key selection criteria include R_DS(on) stability across temperature, Q_g/Q_gd ratio for switching loss optimization, thermal resistance (R_θJC = 3.8°C/W), and SON package compatibility with high-density point-of-load layouts.

Technical Context

This device employs a trench-gate silicon process optimized for low R_DS(on) and fast switching, with gate threshold voltage (V_GS(th)) tightly distributed between 1.1 V and 1.9 V and transconductance (g_fs) of 44 S at V_DS = 3 V and I_D = 10 A. Its dynamic characteristics include C_iss = 1510 pF, C_oss = 177 pF, and C_rss = 75 pF at V_DS = 15 V.

The CSD17578Q5A supports hard-switched operation with turn-on delay of 4 ns, rise time of 22 ns, turn-off delay of 17 ns, and fall time of 2 ns under 10 V gate drive and zero-ohm gate resistance; its diode exhibits V_SD = 1.0 V at I_SD = 10 A and reverse recovery charge Q_rr = 6.5 nC with t_rr = 6.8 ns.

Key Specifications

Pinout & Package

The CSD17578Q5A uses an 8-pin VSONP (DQJ) package with exposed thermal pad, measuring 5.0 mm × 6.0 mm × 1.0 mm, compliant with JEDEC MO-229 and optimized for low-inductance, high-current PCB routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with CSD17578Q5A, CSD17579Q5A trades lower gate charge for slightly higher conduction loss, while IRF7759L2TRPBF offers pin compatibility with older SO-8 designs at the expense of thermal performance and switching efficiency in high-density applications.

Availability

CSD17578Q5A is available at Aetrix Electronics and suitable for telecom point-of-load converters, networking ASIC power rails, and industrial PLC I/O module supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for CSD17578Q5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies with over 90 years of innovation history.

The CSD17578Q5A belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in space- and thermally constrained infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for the CSD17578Q5A?

The CSD17578Q5A has a silicon-limited continuous drain current of 59 A at T_C = 25°C and a package-limited rating of 25 A. At elevated case temperatures, current must be derated per the normalized R_DS(on) vs. temperature curve - for example, to ~40 A at T_C = 100°C. The CSD17578Q5A datasheet specifies absolute maximum pulsed drain current as 132 A.

Does the CSD17578Q5A support logic-level gate drive?

Yes, the CSD17578Q5A is fully characterized for logic-level operation: R_DS(on) is specified at both V_GS = 4.5 V (7.9 mΩ) and V_GS = 10 V (5.9 mΩ), and gate threshold voltage (V_GS(th)) ranges from 1.1 V to 1.9 V. This ensures reliable enhancement-mode turn-on with 3.3 V or 5 V controllers without requiring level-shifting circuitry.

What thermal metrics define the CSD17578Q5A's cooling performance?

The CSD17578Q5A features R_θJC = 3.8°C/W (junction-to-case) and R_θJA = 50°C/W (junction-to-ambient, measured on 1 in² 2 oz. Cu FR4). The low R_θJC enables effective heat transfer to a thermal pad or heatsink, while R_θJA reflects typical board-level dissipation. For high-power designs, thermal design must account for the exposed drain pad's solder joint integrity and copper area beneath the package.

Is the CSD17578Q5A avalanche-rated, and what does that mean for system design?

Yes, the CSD17578Q5A is avalanche-rated with E_AS = 23 mJ (single-pulse, I_D = 22 A, L = 0.1 mH). This rating confirms tested ruggedness against unclamped inductive energy during hard commutation, reducing need for external snubbers in synchronous buck high-side switching. It does not imply unlimited repetitive avalanche operation - safe operating area curves must still be observed.

What is the pin configuration and package type of the CSD17578Q5A?

The CSD17578Q5A uses an 8-pin VSONP (DQJ) package - also marketed as SON 5 mm × 6 mm - with three drain pins (6, 7, 8), one gate pin (5), and four source pins (1–4). The exposed thermal pad is electrically connected to the drain, requiring appropriate PCB isolation and thermal via strategy. Pin numbering follows TI's top-view convention as shown in SLPS526 Figure P0093-01.