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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Texas Instruments CSD17579Q3AT

Name: CSD17579Q3AT
Brand: Texas Instruments
SKU: CSD17579Q3AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CSD17579Q3AT

Manufacturer:: Texas Instruments

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: CSD17579Q3AT.pdf

Description:: MOSFET N-CH 30V 20A 8VSON

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Product details

Overview

CSD17579Q3AT from Texas Instruments is a 30 V, 8.7 mΩ N-channel NexFET™ power MOSFET in an 8-pin SON 3.3 mm × 3.3 mm package, optimized as a control FET in synchronous buck converters for networking, telecom, and computing systems, with 11.8 mΩ R_DS(on) at 4.5 V_GS, 5.3 nC total gate charge, and ±20 V_GS rating.

For engineers reviewing the CSD17579Q3AT datasheet, CSD17579Q3AT pinout, CSD17579Q3AT application, or CSD17579Q3AT equivalent, this page delivers verified electrical specs, thermal metrics, package layout, real-world use cases in high-frequency point-of-load conversion, and validated alternative options for design continuity and supply chain resilience.

Technical Context

This device employs a silicon-limited 39 A continuous drain current capability at T_C = 25°C and a package-limited 20 A rating, enabling high-current switching in compact layouts. Its low Q_gd/Q_g ratio (1.2 nC / 5.3 nC) minimizes Miller-induced turn-off delay and improves hard-switching efficiency.

The MOSFET features avalanche-rated operation (14 mJ single-pulse), 1.5 V threshold voltage (1.1–1.9 V range), and diode forward voltage of 0.8–1.0 V at 8 A, supporting robust body-diode conduction during dead-time intervals in synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in telecom POE and server VRMs.
R_DS(on) @ 10 V_GS	8.7 mΩ - Enables <1.4 W conduction loss at 12 A DC, critical for thermally constrained 3.3 mm × 3.3 mm PCB footprints.
Q_g @ 4.5 V	5.3 nC - Supports efficient 1–2 MHz switching in high-side control FET applications with minimal driver power demand.
Q_gd	1.2 nC - Reduces Miller plateau duration, improving controllability and reducing shoot-through risk in fast-switching topologies.
R_θJC	5.4 °C/W - Enables direct thermal coupling to heatsink or copper plane, allowing >25 W power dissipation with 135°C junction rise above case.
V_GS(th)	1.5 V (typ) - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers without requiring level-shifting circuitry.
I_D (cont, T_C=25°C)	39 A - Silicon-limited current capacity supports high peak-to-average ratios in burst-mode or transient-loaded systems.

Pinout & Package

Package: VSONP (DNH) 8-pin, 3.3 mm × 3.3 mm, exposed thermal pad - requires soldering of thermal pad to PCB for rated R_θJC performance and mechanical reliability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain	Parallel-connected internal drain terminals - must be routed to high-current power plane with minimum trace inductance.
5	Gate	Single gate input - low 1.9 Ω series resistance enables fast edge rates with moderate-strength drivers (e.g., UCC2753x).
6, 7, 8	Source	Three-source terminals tied internally - connect directly to power ground plane to minimize source inductance and improve switching stability.

Key Features

Feature	Design Value
Low Q_g and Q_gd	5.3 nC total gate charge and 1.2 nC gate-to-drain charge reduce driver losses and improve switching timing predictability in MHz-range converters.
Low R_DS(on)	8.7 mΩ at 10 V_GS and 11.8 mΩ at 4.5 V_GS enable high-efficiency operation across both 5 V and 3.3 V gate drive schemes.
Avalanche rated	14 mJ single-pulse unclamped inductive energy handling ensures robustness against voltage transients during hard switching or fault conditions.
Thermal resistance	5.4 °C/W junction-to-case allows >25 W steady-state power dissipation when mounted on a properly designed thermal pad with vias.
RoHS & Halogen free	Compliant with IPC-1752A material declaration requirements and JEDEC MSL Level-1 reflow profile (260°C peak).

Applications

Telecom Point-of-Load Converter	Server VRM High-Side Switch
Use Scenario: 12 V input to 1.2 V/60 A output synchronous buck stage in 48 V intermediate bus architecture. IC Role / Device Role / Timing Role: Control FET switching at 500 kHz–1 MHz with precise dead-time control and low Q_gd-driven Miller immunity. Use Value: 8.7 mΩ R_DS(on) and 5.3 nC Q_g jointly reduce total power loss by ≥18% versus comparable 12 V MOSFETs in same footprint.	Use Scenario: High-current CPU core rail in dual-phase interleaved VRM with 30 A per phase. IC Role / Device Role / Timing Role: Primary high-side switch operating with 4.5 V gate drive from integrated controller (e.g., TPS536xx). Use Value: 11.8 mΩ R_DS(on) at 4.5 V_GS ensures stable regulation under dynamic load steps without gate boosting.
Optical Networking Line Card	Industrial FPGA Power Supply
Use Scenario: Compact 3.3 V/15 A auxiliary rail powering SerDes and PHY ICs in space-constrained pluggable modules. IC Role / Device Role / Timing Role: Synchronous rectifier in high-frequency (1.2 MHz) buck converter with tight thermal budget. Use Value: 3.3 mm × 3.3 mm SON package and 5.4 °C/W R_θJC allow full 15 A load within 12 mm² board area and <65°C case temperature.	Use Scenario: 1.8 V/10 A rail for Xilinx Kintex Ultrascale+ FPGA I/O banks with strict ripple and transient response requirements. IC Role / Device Role / Timing Role: Fast-turning control FET paired with low-Q_rr sync diode to minimize reverse recovery losses. Use Value: 3.4 nC Q_rr and 5 ns t_rr reduce body-diode conduction loss by >40% versus legacy trench MOSFETs in same application.

Telecom Point-of-Load Converter

Server VRM High-Side Switch

Use Scenario: 12 V input to 1.2 V/60 A output synchronous buck stage in 48 V intermediate bus architecture.

IC Role / Device Role / Timing Role: Control FET switching at 500 kHz–1 MHz with precise dead-time control and low Q_gd-driven Miller immunity.

Use Value: 8.7 mΩ R_DS(on) and 5.3 nC Q_g jointly reduce total power loss by ≥18% versus comparable 12 V MOSFETs in same footprint.

Use Scenario: High-current CPU core rail in dual-phase interleaved VRM with 30 A per phase.

IC Role / Device Role / Timing Role: Primary high-side switch operating with 4.5 V gate drive from integrated controller (e.g., TPS536xx).

Use Value: 11.8 mΩ R_DS(on) at 4.5 V_GS ensures stable regulation under dynamic load steps without gate boosting.

Optical Networking Line Card

Industrial FPGA Power Supply

Use Scenario: Compact 3.3 V/15 A auxiliary rail powering SerDes and PHY ICs in space-constrained pluggable modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-frequency (1.2 MHz) buck converter with tight thermal budget.

Use Value: 3.3 mm × 3.3 mm SON package and 5.4 °C/W R_θJC allow full 15 A load within 12 mm² board area and <65°C case temperature.

Use Scenario: 1.8 V/10 A rail for Xilinx Kintex Ultrascale+ FPGA I/O banks with strict ripple and transient response requirements.

IC Role / Device Role / Timing Role: Fast-turning control FET paired with low-Q_rr sync diode to minimize reverse recovery losses.

Use Value: 3.4 nC Q_rr and 5 ns t_rr reduce body-diode conduction loss by >40% versus legacy trench MOSFETs in same application.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel control FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CSD17573Q5A	30 V, 9.8 mΩ @ 10 V_GS, 6.2 nC Q_g, same 3.3 mm × 3.3 mm SON-8 package	Slightly higher R_DS(on) and gate charge; lower thermal resistance (4.8 °C/W R_θJC)	Preferred where thermal headroom is tighter but gate drive strength permits higher Q_g.
SI7157DP-T1-GE3	30 V, 8.5 mΩ @ 10 V_GS, 12.5 nC Q_g, PowerPAK® 1212-8 package (3.0 mm × 3.0 mm)	Lower R_DS(on) but 2.3× higher Q_g; smaller footprint but no exposed thermal pad	Selected when board area is more constrained than thermal budget, and driver can support 12.5 nC load.

Compared with CSD17579Q3AT, CSD17573Q5A trades marginal R_DS(on) increase for improved thermal extraction, while SI7157DP-T1-GE3 offers smaller size at the cost of significantly higher gate drive demand and reduced thermal performance-making CSD17579Q3AT optimal for balanced efficiency, thermal, and drive strength in telecom and server POE designs.

Availability

CSD17579Q3AT is available at Aetrix Electronics and suitable for point-of-load synchronous buck converters, telecom line card power supplies, and server VRM high-side switching applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CSD17579Q3AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company delivering analog and embedded processing solutions, with leadership in power management, signal chain, and microcontrollers since 1930.

The CSD17579Q3AT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in data center, networking, and computing infrastructure where low Q_g, low R_DS(on), and thermal density are critical.

FAQ

What is the maximum continuous drain current rating for CSD17579Q3AT at 125°C case temperature?

The CSD17579Q3AT has a continuous drain current rating of 11 A at T_C = 125°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the 3.3 mm × 3.3 mm SON package under sustained high-temperature operation, and must be used for thermal design validation in enclosed or high-ambient environments.

Does CSD17579Q3AT support 3.3 V gate drive in practical applications?

Yes, CSD17579Q3AT is fully compatible with 3.3 V gate drive: its typical V_GS(th) is 1.5 V (range 1.1–1.9 V), and R_DS(on) is 11.8 mΩ at V_GS = 4.5 V - well within specification for logic-level controllers like TPS40400 or MP2451. At 3.3 V, conduction loss increases moderately but remains usable in medium-current applications.

What is the recommended PCB layout for the thermal pad of CSD17579Q3AT?

The CSD17579Q3AT thermal pad must be soldered to a solid copper plane using the recommended pattern in TI's SLPA005 and SLUA271 application notes: a 2.45 mm × 1.74 mm central pad with 8 thermal vias (0.35 mm diameter, spaced 0.65 mm apart), each filled or capped, connected to an inner-layer ground or power plane to achieve the rated 5.4 °C/W R_θJC.

Is CSD17579Q3AT suitable for avalanche operation in circuit protection designs?

Yes, CSD17579Q3AT is explicitly avalanche rated with E_AS = 14 mJ (single pulse, I_D = 17 A, L = 0.1 mH, R_G = 25 Ω). This rating validates its use in clamping inductive kickback in relay drivers or motor gate drives - provided layout minimizes stray inductance and junction temperature stays within –55°C to 150°C limits during events.

How does the gate charge profile of CSD17579Q3AT impact PWM controller selection?

The CSD17579Q3AT's low 5.3 nC Q_g at 4.5 V_GS allows use of low-power gate drivers such as UCC27517 or LM5113, reducing driver BOM cost and board space. Its 1.2 nC Q_gd also lowers Miller plateau time, enabling stable operation with controllers featuring fast gate drive slew rates and minimal dead-time jitter, like the TPS40322.

CSD17579Q3AT Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: NexFET™

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.2mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 998 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.2W (Ta), 29W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-VSONP (3x3.3)

CSD17579Q3AT FAQ

1.How can I place an order for CSD17579Q3AT through Aetrix?

Please submit a Request for Quotation (RFQ) for CSD17579Q3AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CSD17579Q3AT reliable?

The price and inventory of CSD17579Q3AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD17579Q3AT is usually 5 days.

3.What payment methods are accepted for CSD17579Q3AT?

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4.How is shipping managed for CSD17579Q3AT?

CSD17579Q3AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CSD17579Q3AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CSD17579Q3AT?

For technical support, including CSD17579Q3AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD17579Q3AT requirements.

6.How does Aetrix verify that CSD17579Q3AT is sourced from the original manufacturer or authorized distributors?

All CSD17579Q3AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD17579Q3AT meets industry standards.

7.What is the process for return or replacement of CSD17579Q3AT?

All CSD17579Q3AT units undergo pre-shipment inspection (PSI). If there is an issue with CSD17579Q3AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CSD17579Q3AT part is unused and in its original packaging.

Return procedure for CSD17579Q3AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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