Texas Instruments CSD17579Q5AT

Overview

CSD17579Q5AT from Texas Instruments is a 30 V, 8.4 mΩ N-channel NexFET™ power MOSFET in a SON 5 mm × 6 mm package, optimized as a control FET in synchronous buck converters for networking and telecom point-of-load applications, with 5.4 nC total gate charge at 4.5 V and 1.2 nC gate-to-drain charge.

For engineers reviewing the CSD17579Q5AT datasheet, CSD17579Q5AT pinout, CSD17579Q5AT application, or CSD17579Q5AT equivalent, key selection criteria include R_DS(on) stability across temperature, low Q_g/Q_gd ratio for high-frequency switching efficiency, avalanche rating for robustness in inductive switching, and thermal resistance (R_θJC = 4.3 °C/W) for compact thermal design.

Technical Context

This device employs a silicon-limited 46 A continuous drain current architecture with ±20 V gate-to-source voltage tolerance, enabling operation in 12 V and 15 V gate drive systems. Its low 8.4 mΩ R_DS(on) at V_GS = 10 V and 11.6 mΩ at V_GS = 4.5 V supports efficient conduction in both standard and logic-level control configurations.

The MOSFET features a fast switching profile: 3 ns turn-on delay, 7 ns rise time, 13 ns turn-off delay, and 1 ns fall time under zero-gate-resistance conditions. Its 796–1030 pF input capacitance and 40–52 pF reverse transfer capacitance support stable gate drive design in high-dV/dt environments.

Key Specifications

Pinout & Package

Package: SON 5 mm × 6 mm (VSONP/DQJ), 8-pin, exposed thermal pad on bottom surface. Pin 1–8 arranged in two rows (1–4 top, 5–8 bottom), with pins 1, 2, 3, 4 as Drain, Drain, Drain, Drain; pin 5 as Gate; pins 6, 7, 8 as Source, Source, Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with CSD17579Q5AT, CSD17578Q5A trades 2.1 mΩ higher R_DS(on) for cost reduction while retaining identical pinout and thermal performance, whereas IRF7759L2TRPBF offers higher current rating (30 A) but sacrifices switching speed, avalanche safety, and package compactness-making it unsuitable for high-frequency, space-constrained telecom POL use.

Availability

CSD17579Q5AT is available at Aetrix Electronics and suitable for telecom point-of-load converters, networking ASIC power supplies, and server VRM high-side switching requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for CSD17579Q5AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a U.S.-based semiconductor company specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.

The CSD17579Q5AT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in datacenter, telecom, and computing infrastructure where low Q_g, low R_DS(on), and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for the CSD17579Q5AT?

The CSD17579Q5AT has a package-limited continuous drain current of 25 A at T_C = 25°C, and a silicon-limited rating of 46 A under ideal thermal conditions. In practical PCB layouts with 1 inch² 2 oz. copper, sustained current should be limited to ≤14 A to maintain junction temperature below 150°C per the datasheet's absolute maximum ratings table.

Does the CSD17579Q5AT support logic-level gate drive?

Yes, the CSD17579Q5AT is fully compatible with logic-level gate drive: its threshold voltage (V_GS(th)) is specified at 1.0–2.0 V, and it delivers 11.6 mΩ R_DS(on) at V_GS = 4.5 V-making it suitable for direct interface with 3.3 V or 5 V microcontroller GPIO or dedicated gate drivers without level-shifting circuitry.

What is the thermal resistance from junction to case (R_θJC) for the CSD17579Q5AT?

The CSD17579Q5AT has a maximum junction-to-case thermal resistance (R_θJC) of 4.3 °C/W, measured with the device mounted on a 1 inch², 2 oz. copper pad. This value enables accurate thermal modeling when the exposed thermal pad is soldered to a solid copper plane or heatsink, supporting power dissipation up to 36 W at T_C = 25°C.

Is the CSD17579Q5AT avalanche-rated, and what is its E_AS value?

Yes, the CSD17579Q5AT is avalanche-rated with a single-pulse avalanche energy (E_AS) of 14.5 mJ under test conditions of I_D = 17 A and L = 0.1 mH. This rating provides inherent robustness against inductive switching transients in synchronous buck converters, reducing need for external clamping circuits in fault-tolerant POL designs.

What package type and pin configuration does the CSD17579Q5AT use?

The CSD17579Q5AT uses the SON 5 mm × 6 mm (VSONP/DQJ) package with 8 leads and an exposed thermal pad. Pinout is: Pins 1–4 = Drain (common), Pin 5 = Gate, Pins 6–8 = Source (common). This configuration minimizes parasitic inductance and maximizes thermal conduction-key for high-frequency, high-current switching applications.