Texas Instruments CSD17581Q5AT

Overview

CSD17581Q5AT from Texas Instruments is a 30-V, 2.9-mΩ N-channel NexFET™ power MOSFET in a thermally enhanced 8-pin SON (VSONP-DQJ) package, optimized as a control FET in high-frequency synchronous buck converters for telecom and computing point-of-load applications, with 20 nC total gate charge at 4.5 V and avalanche-rated ruggedness.

For engineers reviewing the CSD17581Q5AT datasheet, CSD17581Q5AT pinout, CSD17581Q5AT application, or CSD17581Q5AT equivalent, key selection criteria include its low R_DS(on) at 4.5 V (3.5 mΩ), 1.3-V threshold voltage, 60-A continuous drain rating, thermal resistance (R_θJC = 1.5°C/W), and compatibility with compact 5 mm × 6 mm PCB layouts requiring high current density and fast switching.

Technical Context

This device employs a silicon-based planar trench MOSFET structure optimized for low gate charge (Q_g = 20 nC @ 4.5 V, Q_gd = 4 nC) and minimal output capacitance (C_oss = 342–445 pF), enabling high-efficiency operation in 500-kHz+ synchronous buck topologies. Its 1.3-V V_GS(th) supports direct drive from 3.3-V and 5-V controllers without level shifting.

The exposed thermal pad and low R_θJC (1.5°C/W) allow efficient heat transfer to the PCB, while avalanche energy rating (E_AS = 76 mJ) provides robustness against inductive switching transients in unclamped inductive loads.

Key Specifications

Pinout & Package

Package: VSONP (DQJ), 8-pin plastic no-lead package with 5.0 mm × 6.0 mm footprint and 1.1 mm max height; features an exposed thermal pad (pins 1–4: Drain; pin 5: Gate; pins 6–8: Source) for low-inductance, high-current routing and enhanced thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with CSD17581Q5AT, BSC010N04LS6 trades higher gate charge for lower on-resistance, while SiR872DP offers marginal R_DS(on) improvement at the cost of increased Q_g and non-matching pinout-neither is pin-compatible, making CSD17581Q5AT preferred for new designs targeting optimal balance of drive simplicity, layout reuse, and thermal efficiency.

Availability

CSD17581Q5AT is available at Aetrix Electronics and suitable for telecom point-of-load converters, server CPU voltage regulators, and industrial FPGA power supplies requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for CSD17581Q5AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies with over 90 years of innovation in high-reliability components.

The CSD17581Q5AT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in space-constrained networking, computing, and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for CSD17581Q5AT at 100°C case temperature?

The CSD17581Q5AT has a continuous drain current rating of 24 A at T_C = 100°C, derived from its 60-A rating at T_C = 25°C and thermal derating curve. This value reflects silicon-limited current under sustained thermal conditions and must be validated against actual board-level thermal design using R_θJA = 50°C/W on a 1-in² 2-oz Cu pad. The CSD17581Q5AT maintains safe operation up to 150°C junction temperature.

Does CSD17581Q5AT support 3.3-V gate drive in practice?

Yes, the CSD17581Q5AT supports 3.3-V gate drive due to its 1.3-V typical threshold voltage and guaranteed 1.0–1.7-V range. At V_GS = 3.3 V, R_DS(on) rises to ~5.2 mΩ (extrapolated from V_GS-R_DS(on) curves), delivering usable performance for low-duty-cycle or low-current applications. For full 2.9-mΩ performance, 4.5–10 V drive is recommended. The CSD17581Q5AT remains fully functional at 3.3 V but with intentional conduction loss trade-off.

How does the thermal pad on CSD17581Q5AT connect electrically?

The exposed thermal pad on the CSD17581Q5AT is internally connected to the drain (D) terminals and must be soldered to a PCB copper pour tied to the input voltage rail or a dedicated thermal plane. It is not electrically isolated and serves both thermal conduction and mechanical anchoring functions. Failure to solder the pad results in degraded R_θJC and potential thermal runaway. The CSD17581Q5AT requires full-surface solder coverage per TI's SLUA271 layout guidelines.

Is CSD17581Q5AT qualified for automotive applications?

No, the CSD17581Q5AT is not AEC-Q101 qualified and is intended for industrial, telecom, and computing applications only. Its specified operating junction temperature range is –55°C to 150°C, but it lacks automotive-specific reliability testing (e.g., HTOL, UHAST, ESD HBM ≥2 kV). For automotive use, TI recommends the AEC-Q101-qualified CSD17579Q5A variant. The CSD17581Q5AT should not be deployed in safety-critical vehicle systems without additional qualification.

What is the gate-to-source leakage current specification for CSD17581Q5AT?

The CSD17581Q5AT specifies a maximum gate-to-source leakage current (I_GSS) of 100 nA at V_GS = 20 V and T_A = 25°C. This low leakage ensures minimal static power draw in always-on control circuits and preserves gate drive integrity over time. Measured values typically fall below 20 nA in production units. The CSD17581Q5AT maintains this specification across its full –55°C to 150°C operating range per TI's characterization data.