Texas Instruments CSD17585F5T

Overview

CSD17585F5T from Texas Instruments is a 30-V, 22-mΩ N-Channel FemtoFET™ MOSFET in a 1.53 mm × 0.77 mm × 0.36 mm PICOSTAR (YJK) package with 3 terminals. It delivers ultra-low gate charge (Qg = 1.9 nC at 4.5 V), integrated ESD protection (>4-kV HBM), and is optimized for space-constrained industrial load switching in handheld and mobile devices.

For engineers reviewing the CSD17585F5T datasheet, CSD17585F5T pinout, CSD17585F5T application, or CSD17585F5T equivalent, key selection criteria include its 22-mΩ R_DS(on) at 10 V, 3.6-A continuous drain current, 0.36-mm profile, and compatibility with high-density PCB layouts requiring minimal footprint and thermal relief.

Technical Context

This N-channel enhancement-mode MOSFET uses TI's FemtoFET™ silicon process to achieve sub-1-mm width and ultra-low Q_gd (0.39 nC), enabling fast switching with reduced Miller-induced turn-off delay. Its threshold voltage (V_GS(th) = 1.3 V typ) supports direct drive from 3.3-V logic without level shifting.

The device integrates an intrinsic body diode with V_SD = 0.74 V at 0.9 A and features robust thermal performance: R_θJA = 90°C/W (max Cu) and 245°C/W (min Cu). Absolute maximum ratings include 30-V V_DS, ±20-V V_GS, and –55°C to 150°C operating junction temperature.

Key Specifications

Pinout & Package

Packaged in a 3-terminal surface-mount PICOSTAR (YJK) package with 0.36-mm max height, the CSD17585F5T uses a leadless, solderable land pattern with exposed pad-less construction and no thermal pad. Pin 1 (Gate) is located at the top-left corner of the top view, aligned with the index area marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Compared with CSD17585F5T, CSD17578Q3 trades footprint and ESD integration for higher power handling, while DMN10H260SN prioritizes low-threshold drive over switching speed and miniaturization-making CSD17585F5T optimal for space- and EMI-sensitive portable designs.

Availability

CSD17585F5T is available at Aetrix Electronics and suitable for industrial load switching, portable power management, USB-C port protection, and smartphone camera module control requiring stable component supply and consistent tape-and-reel delivery.

Supply support for CSD17585F5T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and personal electronics markets.

The CSD17585F5T belongs to TI's FemtoFET™ MOSFET product line, engineered specifically to replace traditional small-signal MOSFETs in ultra-compact, high-density portable and wearable applications where board space and profile are primary constraints.

FAQ

What is the maximum continuous drain current rating for the CSD17585F5T at 25°C ambient?

The CSD17585F5T has a continuous drain current (I_D) rating of 3.6 A at T_A = 25°C with minimum copper PCB layout, and 5.9 A with maximum copper. This rating assumes proper thermal management per the datasheet's R_θJA values (245°C/W min Cu, 90°C/W max Cu). Derating is required above 25°C ambient per the SOA curve in Figure 5-10.

Does the CSD17585F5T require external ESD protection in USB applications?

No, the CSD17585F5T does not require external ESD protection in USB applications because it integrates an on-die ESD protection diode rated >4-kV HBM and >2-kV CDM. This built-in protection satisfies IEC 61000-4-2 Level 4 requirements for USB-C VBUS line switching, eliminating discrete TVS components and reducing BOM count.

What is the gate threshold voltage range for the CSD17585F5T, and how does it affect 3.3-V logic compatibility?

The CSD17585F5T has a gate threshold voltage (V_GS(th)) range of 0.9 V to 1.7 V, with a typical value of 1.3 V. This ensures full enhancement and low R_DS(on) at 3.3-V gate drive, supporting direct interface with standard 3.3-V microcontrollers and PMICs without level-shifting circuitry-critical for low-power portable designs using the CSD17585F5T.

Can the CSD17585F5T be used in a high-frequency PWM application such as a 2-MHz DC-DC converter?

Yes, the CSD17585F5T supports high-frequency PWM applications up to 2 MHz due to its ultra-low total gate charge (Q_g = 1.9 nC at 4.5 V) and minimal gate-to-drain charge (Q_gd = 0.39 nC). These parameters reduce switching transition times (t_d(on) = 4 ns, t_f = 11 ns), minimize overlap losses, and maintain efficiency in compact synchronous buck converters using the CSD17585F5T.

What is the recommended PCB land pattern for the CSD17585F5T, and why is solder-mask-defined layout critical?

The recommended PCB land pattern for the CSD17585F5T is solder-mask-defined, with 0.39-mm × 0.15-mm pads spaced 0.4-mm apart (per Figure 7-2). Solder-mask-defined layout prevents solder bridging on the 0.77-mm-wide device and ensures consistent wetting of all three terminals during reflow-essential for reliability in high-volume manufacturing of products using the CSD17585F5T.