Texas Instruments CSD18502Q5BT

Overview

CSD18502Q5BT from Texas Instruments is a 40 V, 1.8 mΩ N-channel NexFET™ power MOSFET in an 8-pin VSON-CLIP (DNK) package, optimized for high-efficiency DC-DC conversion and synchronous rectification with logic-level gate drive (V_GS(th) = 1.8 V), ultra-low Q_g (25 nC at 4.5 V), and avalanche-rated ruggedness.

For engineers reviewing the CSD18502Q5BT datasheet, CSD18502Q5BT pinout, CSD18502Q5BT application, or CSD18502Q5BT equivalent, key selection criteria include R_DS(on) at 4.5 V (2.5 mΩ), thermal resistance (R_θJC = 0.8°C/W), SOA robustness, and compatibility with compact 5 mm × 6 mm PCB layouts in high-current motor control and server PSU designs.

Technical Context

This device employs a silicon-limited, clip-bonded VSON-CLIP (DNK) structure enabling 204 A continuous drain current at T_C = 25°C and low parasitic inductance for fast switching. Its gate charge profile (Q_gd = 8.4 nC, Q_gs = 10.3 nC) supports high-frequency operation up to 1 MHz in hard-switched topologies.

The MOSFET features integrated body diode with V_SD = 0.8 V at 30 A and Q_rr = 88 nC, enabling efficient reverse recovery in synchronous buck stages. Thermal design is supported by validated R_θJA = 50°C/W on 1-inch² 2 oz. Cu and R_θJC = 0.8°C/W to case top.

Key Specifications

Pinout & Package

Package: VSON-CLIP (DNK), 8-pin, 5 mm × 6 mm plastic package with exposed thermal pad; RoHS exempt, NIPDAU/SN lead finish, MSL Level-1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7759L2TRPBF and DMTH10H025LPS-13, the CSD18502Q5BT delivers superior thermal performance (0.8°C/W vs. ≥1.2°C/W), lower Q_gd-driven switching loss, and tighter V_GS(th) distribution-making it optimal for high-density, high-reliability 40-V power stages where junction temperature control and fast switching are critical.

Availability

CSD18502Q5BT is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, automotive ADAS power supplies, and telecom intermediate bus converters requiring stable component supply and long-term production continuity.

Supply support for CSD18502Q5BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-performance power MOSFET design.

The CSD18502Q5BT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in data center, industrial, and automotive applications demanding ultra-low R_DS(on) and gate charge.

FAQ

What is the maximum continuous drain current for CSD18502Q5BT at 25°C case temperature?

The CSD18502Q5BT supports 204 A continuous drain current when the case temperature (T_C) is maintained at 25°C, as specified in its Absolute Maximum Ratings table. This silicon-limited rating assumes ideal thermal management via the exposed thermal pad and is distinct from the 100 A package-limited rating. The CSD18502Q5BT achieves this high current capability through its clip-bonded VSON-CLIP construction and low R_DS(on).

Does CSD18502Q5BT require a gate driver IC, or can it be driven directly by a microcontroller?

The CSD18502Q5BT can be driven directly by a 5-V microcontroller GPIO due to its logic-level threshold (V_GS(th) = 1.5–2.2 V) and full enhancement at V_GS = 4.5 V. However, for high-frequency (>300 kHz) or high-current (>50 A) applications, a dedicated gate driver is recommended to manage 25 nC total gate charge efficiently and minimize switching losses. The CSD18502Q5BT's low Q_gd (8.4 nC) further simplifies driver selection.

What is the thermal resistance from junction to case (RθJC) for CSD18502Q5BT, and how should it be used in thermal design?

The CSD18502Q5BT has a maximum R_θJC of 0.8°C/W, measured from junction to the top surface of the package. This value enables direct thermal interface to a heatsink or copper plane using thermal interface material. In PCB design, the exposed thermal pad must be soldered to a solid copper pour connected to internal ground planes. The CSD18502Q5BT's low R_θJC allows junction temperatures to remain within the –55°C to 150°C operating range even under sustained 100-A loads with proper thermal layout.

Is CSD18502Q5BT avalanche-rated, and what does that mean for circuit reliability?

Yes, the CSD18502Q5BT is fully avalanche-rated with a single-pulse avalanche energy (E_AS) of 387 mJ under test conditions of I_D = 88 A, L = 0.1 mH, and R_G = 25 Ω. This rating confirms the device can safely absorb inductive energy during switching transients-such as those caused by layout parasitics or load disconnection-without failure. It eliminates the need for external snubber circuits in many 40-V power stage designs, enhancing reliability of the CSD18502Q5BT in motor control and DC-DC applications.

How does the RDS(on) of CSD18502Q5BT vary with temperature and gate voltage?

The CSD18502Q5BT exhibits a typical R_DS(on) of 1.8 mΩ at V_GS = 10 V and 25°C, rising to ~2.3 mΩ at 125°C. At V_GS = 4.5 V, R_DS(on) is 2.5 mΩ at 25°C and increases to ~3.3 mΩ at 125°C. This positive temperature coefficient improves current sharing in paralleled configurations. The CSD18502Q5BT's low V_GS dependency ensures stable on-resistance across its operating temperature range, critical for consistent efficiency in automotive and industrial environments.