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Texas Instruments CSD18510KTT
- Part No.:
- CSD18510KTT
- Manufacturer:
- Texas Instruments
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
CSD18510KTT.pdf
- Description:
- MOSFET N-CH 40V 274A DDPAK
- Quantity:
- Payment:
- Shipping:
Inventory:225
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Product details
Overview
CSD18510KTT from Texas Instruments is a 40V N-Channel NexFET™ power MOSFET in D2PAK (TO-263) package, designed for high-efficiency power conversion with RDS(on) = 1.4 mΩ at VGS = 10 V, Qg = 119 nC, and avalanche-rated operation. It serves as a low-loss switching element in secondary-side synchronous rectification and motor control circuits.
For engineers reviewing the CSD18510KTT datasheet, CSD18510KTT pinout, CSD18510KTT application, or CSD18510KTT equivalent, this page delivers verified electrical specs, thermal performance data, package layout guidance, and real-world substitution options for high-current DC-DC and motor drive designs.
Technical Context
This MOSFET employs silicon-based planar trench technology optimized for ultra-low gate charge (Qg = 119 nC, Qgd = 21 nC) and minimal conduction loss (RDS(on) = 1.4 mΩ @ 10 V). Its D2PAK thermally enhanced package delivers RθJC = 0.6 °C/W, enabling high-current operation up to 274 A (silicon-limited, TC = 25 °C).
The device features a robust body diode with VSD = 0.85 V @ 100 A and Qrr = 70 nC, supporting fast-recovery synchronous rectification. It is rated for unclamped inductive switching with EAS = 328 mJ (ID = 81 A, L = 0.1 mH), and operates across –55 °C to 175 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/24 V/48 V bus-level switching applications |
| RDS(on) | 1.4 mΩ @ VGS = 10 V - Enables <1.4 W conduction loss at 100 A, critical for high-current synchronous rectifiers |
| Qg | 119 nC @ 10 V - Low gate drive energy reduces controller loading and switching losses in high-frequency converters |
| Qgd | 21 nC - Minimizes Miller-induced switching delay and improves hard-switching robustness |
| ID (cont) | 200 A (package-limited) - Sustains high output current in motor H-bridge or LLC secondary legs without derating |
| EAS | 328 mJ - Withstands single-pulse inductive energy during fault conditions without failure |
| RθJC | 0.6 °C/W - Allows direct heatsink mounting for >250 W power dissipation with manageable ΔT |
Pinout & Package
D2PAK (TO-263) plastic package with exposed thermal pad; 3-terminal configuration (Drain, Gate, Source); RoHS-compliant tin-lead-free plating; moisture sensitivity level (MSL) Level-2-260°C-1 year.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Accepts 0–20 V logic-level gate drive; threshold voltage VGS(th) = 1.7 V enables 4.5 V logic compatibility |
| Pin 2 (Drain) | Main current path (high-side connection) | Internally bonded to large copper leadframe and thermal pad; carries full load current and dissipates heat directly to heatsink |
| Pin 3 (Source) | Reference node / return path | Provides low-inductance source return; tied to PCB ground plane and used for gate drive referencing in high-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg and Qgd | Reduces gate driver power demand and minimizes switching transition time in 100–500 kHz converters |
| Low thermal resistance (RθJC = 0.6 °C/W) | Enables >200 A continuous operation with standard heatsinking-no forced air required in many industrial motor drives |
| Avalanche rated (EAS = 328 mJ) | Eliminates need for external snubbers in inductive load switching, improving system reliability under transient overvoltage |
| Body diode with low Qrr (70 nC) | Supports zero-voltage switching (ZVS) in resonant topologies and reduces reverse recovery losses in synchronous rectifiers |
| D2PAK package with exposed thermal pad | Facilitates >90% thermal coupling to PCB copper pour or heatsink, reducing junction-to-ambient rise by ~30 °C vs SO-8 equivalents |
Applications
| Secondary-Side Synchronous Rectifier | Brushless DC Motor Inverter |
|---|---|
|
Use Scenario: Used in the secondary side of isolated DC-DC converters (e.g., 48 V → 12 V telecom PSUs) to replace Schottky diodes. IC Role / Device Role / Timing Role: Power MOSFET acting as actively controlled rectifier, synchronized to primary-side switching timing via controller feedback. Use Value: Reduces conduction loss by >50% vs 40 V Schottky, improving efficiency from 92% to 95% at 100 A output. |
Use Scenario: High-current half-bridge switch in 3-phase BLDC motor drives for industrial automation and e-mobility subsystems. IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter leg, driven by gate driver IC with dead-time control. Use Value: Supports 200 A continuous phase current with <1.5 W conduction loss, enabling compact inverter design without liquid cooling. |
| High-Frequency LLC Resonant Converter | Industrial DC Power Distribution Switch |
|
Use Scenario: Output rectification stage in 300–500 kHz LLC converters for server VRMs and AI accelerator power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier operating in ZVS mode, leveraging low Qgd to minimize turn-on delay and improve soft-switching margin. Use Value: Qgd = 21 nC ensures precise timing alignment with resonant tank zero-crossing, reducing body diode conduction and EMI. |
Use Scenario: Solid-state replacement for mechanical contactors in 48 V battery-powered industrial equipment and UPS systems. IC Role / Device Role / Timing Role: Single-pole, high-current power switch controlling main DC bus delivery; operated with slow-turn-on to limit inrush. Use Value: Avalanche rating (328 mJ) withstands inductive kickback from solenoids and relays, eliminating need for external clamping diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1405PBF | RDS(on) = 5.3 mΩ @ 10 V; Qg = 131 nC; TO-220 package; no avalanche rating | Higher conduction loss limits use to ≤60 A continuous; unsuitable for synchronous rectification above 50 kHz | Choose only for cost-sensitive, lower-current (<50 A), non-avalanche-critical applications where thermal budget allows larger heatsink |
| STL220N4F7AG | RDS(on) = 1.35 mΩ @ 10 V; Qg = 125 nC; DFN 8×8 mm package; 175 °C max TJ | Surface-mount only; no through-hole option; requires 8-layer PCB with internal thermal planes for equivalent RθJA | Select when board space is constrained and multilayer thermal management is available; avoid if manual rework or heatsink mounting is required |
Compared with IRF1405PBF and STL220N4F7AG, CSD18510KTT offers superior thermal interface via D2PAK's exposed pad, guaranteed avalanche ruggedness, and lowest Qgd/RDS(on) ratio-making it optimal for high-reliability, high-current synchronous rectification and motor control where layout flexibility and fault tolerance are essential.
Availability
CSD18510KTT is available at Aetrix Electronics and suitable for high-current DC-DC converters, industrial motor drives, and 48 V power distribution systems requiring stable component supply and long-term production continuity.
Supply support for CSD18510KTT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability components.
The CSD18510KTT belongs to TI's NexFET™ power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial motor control applications.
FAQ
What is the maximum continuous drain current for CSD18510KTT at 100°C case temperature?
The CSD18510KTT supports 193 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This silicon-limited rating reflects derating due to thermal constraints and remains valid under proper heatsinking with RθJC ≤ 0.6 °C/W. The package-limited rating is 200 A at TA = 25 °C.
Does CSD18510KTT have an integrated body diode, and what are its key parameters?
Yes, CSD18510KTT includes a monolithic body diode with VSD = 0.85 V at ISD = 100 A and reverse recovery charge Qrr = 70 nC. These values enable efficient synchronous rectification and reduce switching losses in resonant topologies. The diode is not rated for continuous forward conduction beyond pulsed conditions.
What is the gate threshold voltage range for CSD18510KTT, and how does it affect logic-level drive compatibility?
The gate threshold voltage VGS(th) for CSD18510KTT is specified from 1.4 V to 2.3 V (min/typ/max), with a typical value of 1.7 V. This allows reliable turn-on with 3.3 V and 5 V logic-level gate drivers, though full enhancement (RDS(on) ≤ 2.0 mΩ) requires ≥4.5 V drive per the datasheet's RDS(on) vs. VGS curve.
Can CSD18510KTT be used in avalanche-mode operation, and what is its single-pulse energy rating?
Yes, CSD18510KTT is fully avalanche-rated with a single-pulse avalanche energy (EAS) of 328 mJ under test conditions of ID = 81 A, L = 0.1 mH, and RG = 25 Ω. This rating permits safe operation during inductive switching transients without external protection, provided layout minimizes stray inductance.
What is the recommended PCB layout practice for thermal management of CSD18510KTT?
TI recommends soldering the exposed thermal pad of CSD18510KTT to a minimum 10 cm² copper pour on the PCB, with ≥6 thermal vias (0.3 mm diameter, filled/plugged) connecting to inner or back-side ground planes. The example land pattern in SLPS638C specifies 60.5% solder paste coverage on the pad to ensure void-free attachment and optimal RθJC.
CSD18510KTT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- NexFET™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 274A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.7mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 153 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11400 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (DDPAK-3)
CSD18510KTT FAQ
1.How can I place an order for CSD18510KTT through Aetrix?
Please submit a Request for Quotation (RFQ) for CSD18510KTT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CSD18510KTT reliable?
The price and inventory of CSD18510KTT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CSD18510KTT is usually 5 days.
3.What payment methods are accepted for CSD18510KTT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CSD18510KTT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CSD18510KTT?
CSD18510KTT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CSD18510KTT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CSD18510KTT?
For technical support, including CSD18510KTT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CSD18510KTT requirements.
6.How does Aetrix verify that CSD18510KTT is sourced from the original manufacturer or authorized distributors?
All CSD18510KTT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CSD18510KTT meets industry standards.
7.What is the process for return or replacement of CSD18510KTT?
All CSD18510KTT units undergo pre-shipment inspection (PSI). If there is an issue with CSD18510KTT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CSD18510KTT part is unused and in its original packaging.
Return procedure for CSD18510KTT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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